We demonstrate the ambipolar acoustic transport of optically generated electrons and holes by surface acoustic waves in InGaAsP waveguide structures grown on InP substrates. Transport is detected by monitoring the photoluminescence in the 1400-1500-nm wavelength range emitted by the recombination of the acoustically transported carriers several hundreds of micrometers away from the photoexcitation spot. © 2011 The Physical Society of The Republic of China.
Beck, M., Yang, G., Santos, P., Notzel, R. (2011). Acoustic carrier transport in InP-based structures. CHINESE JOURNAL OF PHYSICS, 49(1), 520-526.
Acoustic carrier transport in InP-based structures
Notzel R.
2011
Abstract
We demonstrate the ambipolar acoustic transport of optically generated electrons and holes by surface acoustic waves in InGaAsP waveguide structures grown on InP substrates. Transport is detected by monitoring the photoluminescence in the 1400-1500-nm wavelength range emitted by the recombination of the acoustically transported carriers several hundreds of micrometers away from the photoexcitation spot. © 2011 The Physical Society of The Republic of China.
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