The authors report the coupling of single InGaAs quantum dots (QDs) to the surface plasmon resonance of a metal nanocrystal. Clear enhancement of the photoluminescence (PL) in the spectral region of the surface plasmon resonance is observed which splits up into distinct emission lines from single QDs in micro-PL. The hybrid metal-semiconductor structure is grown by molecular beam epitaxy on GaAs (100) utilizing the concept of self-organized anisotropic strain engineering for realizing ordered arrays with nanometer-scale precise positioning of the metal nanocrystals with respect to the QDs. © 2010 American Institute of Physics.
Urbanczyk, A., Hamhuis, G., Notzel, R. (2010). Coupling of single InGaAs quantum dots to the plasmon resonance of a metal nanocrystal. APPLIED PHYSICS LETTERS, 97(4) [10.1063/1.3467853].
Coupling of single InGaAs quantum dots to the plasmon resonance of a metal nanocrystal
Notzel R.
2010
Abstract
The authors report the coupling of single InGaAs quantum dots (QDs) to the surface plasmon resonance of a metal nanocrystal. Clear enhancement of the photoluminescence (PL) in the spectral region of the surface plasmon resonance is observed which splits up into distinct emission lines from single QDs in micro-PL. The hybrid metal-semiconductor structure is grown by molecular beam epitaxy on GaAs (100) utilizing the concept of self-organized anisotropic strain engineering for realizing ordered arrays with nanometer-scale precise positioning of the metal nanocrystals with respect to the QDs. © 2010 American Institute of Physics.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
