We report the formation of site-controlled InAs quantum dots (QDs) on InP pyramids and their integration into planar structures by metalorganic vapor-phase epitaxy. The QD number is reduced by the shrinking pyramid size during growth. Finally the emission from a single QD is observed at 1.55 μm, after optimization of the growth parameters. Employing regrowth epitaxy, position-controlled InAs QDs are integrated into planar InP structures. A smooth surface morphology is obtained at 640 °C during regrowth. © 2010 IEEE.

Wang, H., Yuan, J., Van Veldhoven, P., De Vries, P., Smalbrugge, E., Geluk, E., et al. (2010). Formation of site-controlled InAs/InP quantum dots and their integration into planar structures. In Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD (pp.93-94) [10.1109/COMMAD.2010.5699798].

Formation of site-controlled InAs/InP quantum dots and their integration into planar structures

Notzel R.
2010

Abstract

We report the formation of site-controlled InAs quantum dots (QDs) on InP pyramids and their integration into planar structures by metalorganic vapor-phase epitaxy. The QD number is reduced by the shrinking pyramid size during growth. Finally the emission from a single QD is observed at 1.55 μm, after optimization of the growth parameters. Employing regrowth epitaxy, position-controlled InAs QDs are integrated into planar InP structures. A smooth surface morphology is obtained at 640 °C during regrowth. © 2010 IEEE.
paper
Epitaxial growth; Indium arsenide; Microelectronics; Semiconducting indium
English
2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 - 12-15 December 2010
2010
Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
9781424473328
2010
93
94
5699798
none
Wang, H., Yuan, J., Van Veldhoven, P., De Vries, P., Smalbrugge, E., Geluk, E., et al. (2010). Formation of site-controlled InAs/InP quantum dots and their integration into planar structures. In Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD (pp.93-94) [10.1109/COMMAD.2010.5699798].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/552933
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