We present the design, fabrication and characterization of an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. Measured detector responsivity and 3 dB bandwidth are 0.45 A/W and 33 GHz, respectively. The photonic device fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing. © 2009 IEEE.

Binetti, P., Leijtens, X., De Vries, T., Oei, Y., Di Cioccio, L., Fedeli, J., et al. (2009). InP/InGaAs photodetector on SOI circuitry. In IEEE International Conference on Group IV Photonics GFP (pp.214-216) [10.1109/GROUP4.2009.5338390].

InP/InGaAs photodetector on SOI circuitry

Notzel R.;
2009

Abstract

We present the design, fabrication and characterization of an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. Measured detector responsivity and 3 dB bandwidth are 0.45 A/W and 33 GHz, respectively. The photonic device fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing. © 2009 IEEE.
paper
Ingaas/inp; Optical interconnects; Photodetector;
Ingaas/inp; Optical interconnects; Photodetector;
English
2009 6th IEEE International Conference on Group IV Photonics, GFP '09 - 09-11 September 2009
2009
IEEE International Conference on Group IV Photonics GFP
9781424444021
2009
214
216
5338390
none
Binetti, P., Leijtens, X., De Vries, T., Oei, Y., Di Cioccio, L., Fedeli, J., et al. (2009). InP/InGaAs photodetector on SOI circuitry. In IEEE International Conference on Group IV Photonics GFP (pp.214-216) [10.1109/GROUP4.2009.5338390].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/554275
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