Time-resolved photoluminescence measurements have been performed on sidewall InGaAs/AlGaAs quantum wires and quantum wells. Experimental data show a band filling of quantum wells and quantum wires that is dominant in the first 400 ps after the excitation pulse, then a dynamical screening of the built-in piezoelectric field (Fp) by means of fast injection of photo-generated charges is observed allowing an efficient radiative recombination. At longer time delay, during the regime when the Fp unscreened value is recovered, a strong quantum confined Stark effect is observed. A good agreement is obtained for the energy shift and the overlap integrals of electrons and heavy holes by means of discrete element calculations.
Alderighi, D., Zamfirescu, M., Gurioli, M., Vinattieri, A., Colocci, M., Sanguinetti, S., et al. (2003). Piezoelectric effects in sidewall quantum wires grown on patterned (311)A GaAs substrate. PHYSICA STATUS SOLIDI C, 0(5), 1433-1436 [10.1002/pssc.200303195].
Piezoelectric effects in sidewall quantum wires grown on patterned (311)A GaAs substrate
SANGUINETTI, STEFANO;
2003
Abstract
Time-resolved photoluminescence measurements have been performed on sidewall InGaAs/AlGaAs quantum wires and quantum wells. Experimental data show a band filling of quantum wells and quantum wires that is dominant in the first 400 ps after the excitation pulse, then a dynamical screening of the built-in piezoelectric field (Fp) by means of fast injection of photo-generated charges is observed allowing an efficient radiative recombination. At longer time delay, during the regime when the Fp unscreened value is recovered, a strong quantum confined Stark effect is observed. A good agreement is obtained for the energy shift and the overlap integrals of electrons and heavy holes by means of discrete element calculations.
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