The formation of laterally ordered linear InAs quantum dot (QD) arrays based on self-organized anisotropic strain engineering is demonstrated. An InAs/InGaAsP superlattice (SL) on InP (1 0 0) serves as a template for the QD arrays grown by chemical beam epitaxy. The InAs QD arrays exhibit excellent photoluminescence emission up to room temperature which is tuned into the 1.55-μm telecom wavelength region through the insertion of ultra-thin GaAs interlayers. Stacking of the QD arrays with identical emission wavelength upon adjusting the GaAs interlayer thickness produces a three-dimensionally self-ordered QD crystal. © 2008 Elsevier B.V. All rights reserved.
Sritirawisarn, N., van Otten, F., Eijkemans, T., Notzel, R. (2009). Formation of linear InAs/InGaAsP/InP (1 0 0) quantum dot arrays by self-organized anisotropic strain engineering in chemical beam epitaxy. JOURNAL OF CRYSTAL GROWTH, 311(7), 1822-1824 [10.1016/j.jcrysgro.2008.09.017].
Formation of linear InAs/InGaAsP/InP (1 0 0) quantum dot arrays by self-organized anisotropic strain engineering in chemical beam epitaxy
Notzel R.
2009
Abstract
The formation of laterally ordered linear InAs quantum dot (QD) arrays based on self-organized anisotropic strain engineering is demonstrated. An InAs/InGaAsP superlattice (SL) on InP (1 0 0) serves as a template for the QD arrays grown by chemical beam epitaxy. The InAs QD arrays exhibit excellent photoluminescence emission up to room temperature which is tuned into the 1.55-μm telecom wavelength region through the insertion of ultra-thin GaAs interlayers. Stacking of the QD arrays with identical emission wavelength upon adjusting the GaAs interlayer thickness produces a three-dimensionally self-ordered QD crystal. © 2008 Elsevier B.V. All rights reserved.
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