Local post-production processing of single holes in a planar photonic crystal is demonstrated by selectively opening a masking layer by focused ion beam milling. Local tuning was optically demonstrated by both blueshifting and subsequent red-shifting the resonance frequency of a point defect cavity. Since only a few holes of the PC are affected by the post-processing, the Q-factor is not significantly changed. This method can be applied to precisely control the resonant frequency, and can also be used for mode selective tuning. ©2009 IEEE.
Kicken, H., Alkemade, P., Van Der Heijden, R., Karouta, F., Notzel, R., Van Der Drift, E., et al. (2009). Local digital etching and infiltration for tuning of a H1- Cavity in deeply etched InP/InGaAsP/InP photonic crystals. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp.31-34). IEEE [10.1109/ICIPRM.2009.5012419].
Local digital etching and infiltration for tuning of a H1- Cavity in deeply etched InP/InGaAsP/InP photonic crystals
Notzel R.;
2009
Abstract
Local post-production processing of single holes in a planar photonic crystal is demonstrated by selectively opening a masking layer by focused ion beam milling. Local tuning was optically demonstrated by both blueshifting and subsequent red-shifting the resonance frequency of a point defect cavity. Since only a few holes of the PC are affected by the post-processing, the Q-factor is not significantly changed. This method can be applied to precisely control the resonant frequency, and can also be used for mode selective tuning. ©2009 IEEE.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
