We developed an InP-based photodetector which was bonded on a CMOS wafer containing a Si3N4-wiring photonic circuit. The detector fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing. Integration technology and experimental results are presented in this paper. © 2009 IEEE.

Binetti, P., Leijtens, X., Ripoll, A., De Vries, T., Smalbrugge, E., Oei, Y., et al. (2009). InP-based photodetector bonded on CMOS with Si3N4 interconnect waveguides. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS (pp.139-140). Institute of Electrical and Electronics Engineers Inc. [10.1109/LEOS.2009.5343085].

InP-based photodetector bonded on CMOS with Si3N4 interconnect waveguides

Notzel R.;
2009

Abstract

We developed an InP-based photodetector which was bonded on a CMOS wafer containing a Si3N4-wiring photonic circuit. The detector fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing. Integration technology and experimental results are presented in this paper. © 2009 IEEE.
paper
CMOS integrated circuits; III-V semiconductors; Indium phosphide; Photodetectors; Photons; Semiconducting indium phosphide; Wafer bonding; WSI circuits
English
2009 IEEE LEOS Annual Meeting Conference, LEOS '09 - 04-08 October 2009
2009
Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
9781424436804
2009
139
140
5343085
none
Binetti, P., Leijtens, X., Ripoll, A., De Vries, T., Smalbrugge, E., Oei, Y., et al. (2009). InP-based photodetector bonded on CMOS with Si3N4 interconnect waveguides. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS (pp.139-140). Institute of Electrical and Electronics Engineers Inc. [10.1109/LEOS.2009.5343085].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/554265
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