We review our recent advances in the lateral ordering, position, and number control of self-organized epitaxial semiconductor quantum dots based on self-organized anisotropic strain engineering, growth on patterned substrates, and selective area growth. © 2009 IEEE.

Notzel, R., Sritirawisarn, N., Selcuk, E., Wang, H., Yuan, J. (2009). Quantum dots for future nanophotonic devices: Lateral ordering, position, and number control. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS (pp.276-277). IEEE [10.1109/LEOS.2009.5343272].

Quantum dots for future nanophotonic devices: Lateral ordering, position, and number control

Notzel R.;
2009

Abstract

We review our recent advances in the lateral ordering, position, and number control of self-organized epitaxial semiconductor quantum dots based on self-organized anisotropic strain engineering, growth on patterned substrates, and selective area growth. © 2009 IEEE.
paper
Epitaxial growth; Nanophotonics; Semiconductor growth
English
2009 IEEE LEOS Annual Meeting Conference, LEOS '09 - 04-08 October 2009
2009
Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
9781424436804
2009
276
277
5343272
none
Notzel, R., Sritirawisarn, N., Selcuk, E., Wang, H., Yuan, J. (2009). Quantum dots for future nanophotonic devices: Lateral ordering, position, and number control. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS (pp.276-277). IEEE [10.1109/LEOS.2009.5343272].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/553968
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