An efficient, self-powered ultraviolet photoelectrochemical photodetector based on n-GaN/p-Cu2O core-shell nanowire p-n heterojunctions is demonstrated. The photocurrent under solar light is 2-3 times larger than that for GaN nanowires. The photocurrents under the solar light and the ultraviolet light fraction are comparable, 100 μA/cm2 photocurrent density. The photocurrent under the broad visible light part is about 3% of that under solar light. The responsivity and specific detectivity reach 961.5 μA/W and 5.35 × 109 Jones under ultraviolet light, respectively. The rise/fall times are 42/65 ms. This is understood by efficient photocarrier separation, hole collection, and transport in the near-surface GaN/Cu2O p-n heterojunction.
Luo, M., Song, J., Wang, J., Pan, X., Hong, H., Notzel, R. (2022). Ultraviolet photoelectrochemical photodetector based on GaN/Cu2O core-shell nanowire p-n heterojunctions. AIP ADVANCES, 12(11) [10.1063/5.0127889].
Ultraviolet photoelectrochemical photodetector based on GaN/Cu2O core-shell nanowire p-n heterojunctions
Notzel R.
2022
Abstract
An efficient, self-powered ultraviolet photoelectrochemical photodetector based on n-GaN/p-Cu2O core-shell nanowire p-n heterojunctions is demonstrated. The photocurrent under solar light is 2-3 times larger than that for GaN nanowires. The photocurrents under the solar light and the ultraviolet light fraction are comparable, 100 μA/cm2 photocurrent density. The photocurrent under the broad visible light part is about 3% of that under solar light. The responsivity and specific detectivity reach 961.5 μA/W and 5.35 × 109 Jones under ultraviolet light, respectively. The rise/fall times are 42/65 ms. This is understood by efficient photocarrier separation, hole collection, and transport in the near-surface GaN/Cu2O p-n heterojunction.
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