The authors discuss and demonstrate the growth of InN surface quantum dots on a high-In-content In0.73Ga0.27N layer, directly on a Si(111) substrate by plasma-assisted molecular beam epitaxy. Atomic force microscopy and transmission electron microscopy reveal uniformly distributed quantum dots with diameters of 10-40 nm, heights of 2-4 nm, and a relatively low density of ∼7 × 109 cm-2. A thin InN wetting layer below the quantum dots proves the Stranski-Krastanov growth mode. Near-field scanning optical microscopy shows distinct and spatially well localized near-infrared emission from single surface quantum dots. This holds promise for future telecommunication and sensing devices.
Soto Rodriguez, P., Aseev, P., Gomez, V., Kumar, P., Ul Hassan Alvi, N., Calleja, E., et al. (2015). Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111). APPLIED PHYSICS LETTERS, 106(2) [10.1063/1.4905662].
Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111)
Notzel R.
2015
Abstract
The authors discuss and demonstrate the growth of InN surface quantum dots on a high-In-content In0.73Ga0.27N layer, directly on a Si(111) substrate by plasma-assisted molecular beam epitaxy. Atomic force microscopy and transmission electron microscopy reveal uniformly distributed quantum dots with diameters of 10-40 nm, heights of 2-4 nm, and a relatively low density of ∼7 × 109 cm-2. A thin InN wetting layer below the quantum dots proves the Stranski-Krastanov growth mode. Near-field scanning optical microscopy shows distinct and spatially well localized near-infrared emission from single surface quantum dots. This holds promise for future telecommunication and sensing devices.
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