We report on experimental and theoretical study of GaA/InGaAs quantum systems grown along the [N11] direction. Time-resolved photoluminescence measurements have revealed a strong non-linear optical response from a sidewall quantum wire. The experimental results were reproduced by theoretical calculations taking into account strain, piezo-charge and excitonic effect. Also we theoretically investigated the effect of strain and piezo-charge on the properties of a quantum dot.

Povolotskyi, M., Gleize, J., Di Carlo, A., Lugli, P., Birner, S., Vogl, P., et al. (2004). Non-linear optical properties of InGaAs/AlGaAs nanostructures grown on (N11) surfaces. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 19(4), S351-S353 [10.1088/0268-1242/19/4/116].

Non-linear optical properties of InGaAs/AlGaAs nanostructures grown on (N11) surfaces

SANGUINETTI, STEFANO;
2004

Abstract

We report on experimental and theoretical study of GaA/InGaAs quantum systems grown along the [N11] direction. Time-resolved photoluminescence measurements have revealed a strong non-linear optical response from a sidewall quantum wire. The experimental results were reproduced by theoretical calculations taking into account strain, piezo-charge and excitonic effect. Also we theoretically investigated the effect of strain and piezo-charge on the properties of a quantum dot.
Articolo in rivista - Articolo scientifico
Stark effect; High index, III-V semiconductors; piezoelectric effect; photoluminescence
English
apr-2004
19
4
S351
S353
none
Povolotskyi, M., Gleize, J., Di Carlo, A., Lugli, P., Birner, S., Vogl, P., et al. (2004). Non-linear optical properties of InGaAs/AlGaAs nanostructures grown on (N11) surfaces. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 19(4), S351-S353 [10.1088/0268-1242/19/4/116].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/494
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