Formation of laterally ordered single InAs quantum dot (QD) arrays by self-organized anisotropic strain engineering of InGaAs/GaAs superlattice templates on GaAs (311)B by molecular beam epitaxy is achieved through optimization of growth temperature, InAs amount, and annealing. Directed self-organization of these QD arrays is accomplished by coarse substrate patterns providing absolute QD position control over large areas. Due to the absence of one-to-one pattern definition the site-controlled QD arrays exhibit excellent optical properties revealed by resolution limited (80 μeV) linewidth of the low-temperature photoluminescence from individual QDs. © 2009 American Institute of Physics.
Seluk, E., Silov, A., Notzel, R. (2009). Single InAs quantum dot arrays and directed self-organization on patterned GaAs (311)B substrates. APPLIED PHYSICS LETTERS, 94(26) [10.1063/1.3167813].
Single InAs quantum dot arrays and directed self-organization on patterned GaAs (311)B substrates
Notzel R.
2009
Abstract
Formation of laterally ordered single InAs quantum dot (QD) arrays by self-organized anisotropic strain engineering of InGaAs/GaAs superlattice templates on GaAs (311)B by molecular beam epitaxy is achieved through optimization of growth temperature, InAs amount, and annealing. Directed self-organization of these QD arrays is accomplished by coarse substrate patterns providing absolute QD position control over large areas. Due to the absence of one-to-one pattern definition the site-controlled QD arrays exhibit excellent optical properties revealed by resolution limited (80 μeV) linewidth of the low-temperature photoluminescence from individual QDs. © 2009 American Institute of Physics.
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