An explanation is given of the super-Nernstian response of InN/InGaN quantum dots (QDs) in potentiometric ion- and biosensing, beating the fundamental thermodynamic kT/e limit. It follows from the unique surface- and quantum properties of the QDs. The resulting quantum mechanical partition of electrons inside and outside of the QDs implies fractional electron transfer in an artificial chemical redox half-reaction of the QDs upon ion attachment or electron transfer to the QDs.
Notzel, R. (2020). On the super-Nernstian potentiometric response of InN/InGaN quantum dots. CHEMICAL PHYSICS LETTERS, 751 [10.1016/j.cplett.2020.137537].
On the super-Nernstian potentiometric response of InN/InGaN quantum dots
Notzel R.
2020
Abstract
An explanation is given of the super-Nernstian response of InN/InGaN quantum dots (QDs) in potentiometric ion- and biosensing, beating the fundamental thermodynamic kT/e limit. It follows from the unique surface- and quantum properties of the QDs. The resulting quantum mechanical partition of electrons inside and outside of the QDs implies fractional electron transfer in an artificial chemical redox half-reaction of the QDs upon ion attachment or electron transfer to the QDs.
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