Spontaneous formation of InGaN nanowall network directly on Si

We present the study on epitaxial growth of an InGaN nanowall network directly on Si by plasma-assisted molecular beam epitaxy. Scanning electron microscopy, high-resolution X-ray diffraction, and transmission electron microscopy together with energy-dispersive X-ray analysis infer the crystalline nature of the InGaN nanowall network, oriented along the C-axis, with In composition ranging from pure GaN to 40. Room temperature photoluminescence is observed, indicating good optical quality. The nanowall network is highly in-plane electrically conductive. © 2013 AIP Publishing LLC.