We demonstrate very high line rate serial 160Gb/s data transmission through a semiconductor optical amplifier based multistage switching matrix. This represents both the leading edge in monolithic switching circuit complexity and the highest reported line rates through monolithically cascaded switching networks. Bit error rate studies are performed to show only modest levels of signal degradation. Power penalties of order 0.6dB and 1.2dB are observed for two stages and four stages respectively in the monolithic circuits at 160Gb/s per path. © 2009 IEEE.

Albores-Mejia, A., Williams, K., Gomez-Agis, F., Zhang, S., Dorren, H., Leijtens, X., et al. (2009). 160Gb/s serial line rates in a monolithic optoelectronic multistage interconnection network. In Proceedings - Symposium on the High Performance Interconnects, Hot Interconnects (pp.157-162). IEEE [10.1109/HOTI.2009.10].

160Gb/s serial line rates in a monolithic optoelectronic multistage interconnection network

Notzel R.;
2009

Abstract

We demonstrate very high line rate serial 160Gb/s data transmission through a semiconductor optical amplifier based multistage switching matrix. This represents both the leading edge in monolithic switching circuit complexity and the highest reported line rates through monolithically cascaded switching networks. Bit error rate studies are performed to show only modest levels of signal degradation. Power penalties of order 0.6dB and 1.2dB are observed for two stages and four stages respectively in the monolithic circuits at 160Gb/s per path. © 2009 IEEE.
paper
Integrated optoelectronics; Optical switches;
English
17th IEEE Symposium on High Performance Interconnects, HOTI 2009 - 25-27 August 2009
2009
Proceedings - Symposium on the High Performance Interconnects, Hot Interconnects
9780769538471
2009
157
162
5238669
none
Albores-Mejia, A., Williams, K., Gomez-Agis, F., Zhang, S., Dorren, H., Leijtens, X., et al. (2009). 160Gb/s serial line rates in a monolithic optoelectronic multistage interconnection network. In Proceedings - Symposium on the High Performance Interconnects, Hot Interconnects (pp.157-162). IEEE [10.1109/HOTI.2009.10].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/554324
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