Ehrlich-Schwöbel effect on the growth dynamics of GaAs(111)A surfaces

We present a detailed characterization of the growth dynamics of Ga(Al)As(111)A surfaces. We develop a theoretical growth model that well describes the observed behavior on the growth parameters and underlines the Ehrlich-Schwöbel barrier as a leading factor that determines the growth dynamics. On such basis we analyze the factors that lead to the huge observed roughness on such surface orientations and we identify the growth conditions that drive the typical three-dimensional growth of Ga(Al)As(111)A towards an atomically flat surface. GaAs/Al0.30Ga0.70As quantum wells realized on an optimized surface (<0.2 nm roughness) show a record low emission linewidth of 4.5 meV.