Bicocca Open Archive

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BERGAMASCHINI, ROBERTO
 Distribuzione geografica
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Continente #
NA - Nord America 6.678
EU - Europa 3.465
AS - Asia 1.112
AF - Africa 12
Continente sconosciuto - Info sul continente non disponibili 6
SA - Sud America 5
OC - Oceania 3
Totale 11.281
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Nazione #
US - Stati Uniti d'America 6.575
DE - Germania 888
IT - Italia 786
CN - Cina 619
SE - Svezia 476
IE - Irlanda 380
UA - Ucraina 215
VN - Vietnam 205
GB - Regno Unito 204
HK - Hong Kong 157
AT - Austria 122
CA - Canada 101
FI - Finlandia 83
FR - Francia 65
RU - Federazione Russa 49
DK - Danimarca 47
IN - India 44
TR - Turchia 40
ES - Italia 34
NL - Olanda 34
BE - Belgio 27
CH - Svizzera 26
BD - Bangladesh 9
JP - Giappone 9
KR - Corea 9
CI - Costa d'Avorio 6
EU - Europa 6
SG - Singapore 6
CZ - Repubblica Ceca 5
PL - Polonia 5
BG - Bulgaria 4
GR - Grecia 4
HU - Ungheria 4
PK - Pakistan 4
AU - Australia 3
BR - Brasile 3
IL - Israele 3
IR - Iran 3
RO - Romania 3
TW - Taiwan 3
SC - Seychelles 2
BZ - Belize 1
CL - Cile 1
EC - Ecuador 1
GW - Guinea-Bissau 1
LU - Lussemburgo 1
LV - Lettonia 1
MD - Moldavia 1
MK - Macedonia 1
MU - Mauritius 1
MX - Messico 1
MY - Malesia 1
TN - Tunisia 1
ZA - Sudafrica 1
Totale 11.281
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Città #
Ann Arbor 1.993
Frankfurt am Main 611
Woodbridge 599
Chandler 573
Fairfield 495
Houston 410
Dublin 361
Milan 349
Wilmington 289
Jacksonville 266
Ashburn 265
Dearborn 201
Seattle 199
Princeton 173
New York 171
Dong Ket 156
Cambridge 152
Hong Kong 144
Nanjing 126
Vienna 115
Guangzhou 88
Altamura 61
Beijing 58
Dresden 50
Shanghai 49
Boardman 45
Lawrence 45
Lachine 43
Southend 43
Nanchang 36
San Diego 32
Andover 24
Norwalk 24
Helsinki 23
Ottawa 23
Brussels 22
Shenyang 21
Hebei 20
Hangzhou 19
Jiaxing 18
Tianjin 17
Jinan 16
Toronto 16
Turin 16
London 15
Sacramento 15
Changsha 14
Kunming 14
Pune 14
Falls Church 13
Hefei 13
Lausanne 13
Torino 13
Fremont 12
Valladolid 12
Marburg 11
Ningbo 11
Taizhou 11
Ardea 10
Eindhoven 10
Mountain View 10
Rome 10
Chicago 9
Grafing 9
Zhengzhou 9
Edmonton 8
Cinisello Balsamo 7
Nürnberg 7
Redmond 7
Sesto Fiorentino 7
Abidjan 6
Amsterdam 6
Chemnitz 6
Chittagong 6
Fabriano 6
Lanzhou 6
Arcore 5
Cagliari 5
Hwaseong-si 5
Kanpur 5
Karlsruhe 5
Kiev 5
Kocaeli 5
Phoenix 5
San Mateo 5
Agliè 4
Budapest 4
Copenhagen 4
Huizen 4
Los Angeles 4
Montréal 4
Monza 4
Munich 4
Sai Kung 4
Sant'ambrogio Di Torino 4
Sergnano 4
Singapore 4
Taiyuan 4
Upper Marlboro 4
Washington 4
Totale 8.882
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Nome #
Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study 324
Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling 308
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 304
Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates 288
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A 284
Sunburst pattern by kinetic segregation in core-shell nanowires: A phase-field study 259
Slip trace-induced terrace erosion 233
Growth and coalescence of 3c-sic on si(111) micro-pillars by a phase-field approach 219
"Divide et impera" in detector technology 211
Dislocation-free SiGe/Si heterostructures 204
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment 196
Strain engineering in Ge/GeSn core/shell nanowires 194
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film 190
A Structural Characterization of GaAs MBE Grown on Si Pillars 181
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 180
Optically reconfigurable polarized emission in Germanium 180
Faceting of equilibrium and metastable nanostructures: A phase-field model of surface diffusion tackling realistic shapes 178
Dynamics of pit filling in heteroepitaxy via phase-field simulations 167
3D heteroepitaxy of mismatched semiconductors on silicon 166
Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays 163
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars 155
Anomalous Smoothing Preceding Island Formation During Growth on Patterned Substrates 154
Temperature-dependent evolution of the wetting layer thickness during Ge deposition on Si(001) 153
Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture 149
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 147
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si 146
Space-filling Arrays of Three-Dimensional Epitaxial Ge and Si 1-xGe x Crystals 142
Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires 142
Continuum Modeling of cyclic growth in Ge/Si(001) heteroepitaxy 141
A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD 141
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 137
Morphological evolution of Ge/Si nano-strips driven by Rayleigh-like instability 135
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 135
Three dimensional heteroepitaxy: A new path for monolithically integrating mismatched materials with silicon 134
Scaling Hetero-Epitaxy from Layers to Three-Dimensional Crystals 133
Modelling the kinetic growth mode of GaAs nanomembranes 132
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 131
Ge Crystals on Si Show Their Light 129
Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001) 128
Continuum modeling of heteroepitaxial growth in semiconductors 127
Faceting of Equilibrium and Metastable Nano- and Micro- structures: A Phase-Field Model of Surface Diffusion Tackling Realistic Shapes 126
Continuum modelling of semiconductor heteroepitaxy: an applied perspective 126
Self-aligned epitaxy in a mask-less deposition with kinetic and geometric constraints 124
Continuum modeling of Ge/Si heteroepitaxy in the presence of misfit dislocations 123
The interplay of morphological and compositional evolution in crystal growth: a phase-field model 120
Motion of crystalline inclusions by interface diffusion in the proximity of free surfaces 118
Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates 115
Continuum modeling of heteroepitaxial growth: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing 111
Continuum models of heteroepitaxial growth on patterned substrates 110
3D heteroepitaxy on patterned Si substrates: a new monolithic integration strategy 110
Dynamics of pit filling in heteroepitaxy via phase-field simulations 109
Modeling the competition between elastic and plastic relaxation in semiconductor heteroepitaxy: From cyclic growth to flat films 108
Modeling simultaneous elastic and plastic relaxation during Ge deposition on Si(001) 106
Modeling semiconductor heteroepitaxy: a continuum approach 106
Phase‐Field modeling of semiconductor heteroepitaxy: elastic relaxation, surface energy minimization and intermixing 105
Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars 105
Morphological evolution and compositional segregation effects in core-shell nanowires 105
Monolithic integration of GaAs on deeply patterned Si substrates by self-assembled arrays of three-dimensional microcrystals 104
Strain and strain-driven effects in coaxial nanowires 104
Optimal growth conditions for selective Ge islands positioning on pit-patterned Si(001) 104
Engineered coalescence of three-dimensional Ge microcrystals into high-quality suspended layers on Si pillars 103
Continuum model of cyclic growth induced by dislocations in SiGe/Si heteroepitaxy 101
Phase-field modeling of the morphological evolution of ringlike structures during growth: Thermodynamics, kinetics, and template effects 101
Enhancing radiative recombination in heteroepitaxial systems: three dimensional Ge-crystals 100
Kinetic growth mode of epitaxial GaAs on Si(001) micro-pillars 100
Fast pit filling and 3D island formation during Ge deposition on pit-patterned Si(001) substrates 99
Heteroepitaxy in out-of-equilibrium conditions on dense Si-pillar arrays: a new monolithic integration strategy 99
Kinetic growth and surface faceting of vertical micro- and nano-structures: theory and experiments 99
Phase-field modelling of compositional segregation during the growth of core-shell nanowires 99
Epitaxial Ge-crystal arrays for X-ray detection 99
The interplay of morphological and compositional evolution in heteroepitaxy: a Phase-Field model 94
Strain relaxation in semiconductor core/shell nanowires 93
The interplay of morphology, composition and strain in metastable Ge/GeSn core/shell nanowires 88
Faceting of Si and Ge crystals grown on deeply patterned Si substrates in the kinetic regime: phase-field modelling and experiments 86
Photoluminescence of bulk-quality 3D Ge crystal arrays on Si (001) 81
Continuum modeling of the heteroepitaxial growth of semiconductor nanostructures 81
Dislocation assessment and their elimination in high-quality Ge microcrystals integrated on deeply patterned Si (001) substrates 80
In-Plane Nanowire Growth of Topological Crystalline Insulator Pb₁₋ₓSnₓTe 80
Modeling the competition between elastic and plastic relaxation in semiconductor heteroepitaxy: From cyclic growth to flat films 76
Semiconductor heteroepitaxy 76
Three-dimensional EpitaxialSi1-xGex, Ge and SiC Crystals onDeeply Patterned Si substrates 74
Understanding the kinetics segregation in core-shell nanowires: a phase-field approach 71
Modeling the kinetic-driven morphological evolution in the 3D epitaxy of semiconductor micro- and nano-structures 70
Modelling the kinetic growth and faceting of vertical micro- and nano-structures on Si 59
Semiconductor Heteroepitaxy 58
Morphological evolution via surface diffusion learned by convolutional, recurrent neural networks: Extrapolation and prediction uncertainty 49
Continuum model of out-of-equilibrium crystal growth: theory and experiments 49
Continuum modeling of 3D semiconductor epitaxy: thermodynamic and kinetic driving forces behind morphological and compositional evolution 44
Doubling the mobility of InAs/InGaAs selective area grown nanowires 38
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy 37
Kinetic-control of morphology and composition during the 3D growth of semiconductor nanostructures 21
Totale 11.864
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Categoria #
all - tutte 31.287
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 31.287
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019554 0 0 0 0 0 0 0 0 0 119 221 214
2019/20201.842 205 74 114 179 155 216 287 138 172 108 143 51
2020/20211.975 76 95 179 206 143 147 150 149 167 191 143 329
2021/20221.817 149 188 209 209 124 118 94 107 86 165 128 240
2022/20232.312 244 605 260 293 157 347 13 99 165 28 41 60
2023/20241.154 53 78 77 51 208 321 226 45 85 10 0 0
Totale 11.864