Bicocca Open Archive

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BERGAMASCHINI, ROBERTO
 Distribuzione geografica
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Continente #
NA - Nord America 7.638
EU - Europa 4.580
AS - Asia 2.271
SA - Sud America 95
AF - Africa 36
Continente sconosciuto - Info sul continente non disponibili 6
OC - Oceania 4
Totale 14.630
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Nazione #
US - Stati Uniti d'America 7.521
DE - Germania 973
IT - Italia 969
SG - Singapore 800
RU - Federazione Russa 729
CN - Cina 697
SE - Svezia 481
IE - Irlanda 388
HK - Hong Kong 322
UA - Ucraina 230
GB - Regno Unito 221
VN - Vietnam 205
AT - Austria 142
CA - Canada 107
FI - Finlandia 101
FR - Francia 100
BR - Brasile 84
ID - Indonesia 69
ES - Italia 50
DK - Danimarca 48
IN - India 48
NL - Olanda 44
TR - Turchia 44
CH - Svizzera 30
BE - Belgio 28
ZA - Sudafrica 19
JP - Giappone 17
BD - Bangladesh 11
PK - Pakistan 11
KR - Corea 10
PL - Polonia 10
TW - Taiwan 9
IL - Israele 8
CI - Costa d'Avorio 6
CZ - Repubblica Ceca 6
EU - Europa 6
MX - Messico 6
KG - Kirghizistan 5
BG - Bulgaria 4
EC - Ecuador 4
GR - Grecia 4
HU - Ungheria 4
MA - Marocco 4
AU - Australia 3
IR - Iran 3
LU - Lussemburgo 3
LV - Lettonia 3
RO - Romania 3
AL - Albania 2
AZ - Azerbaigian 2
CL - Cile 2
CO - Colombia 2
CR - Costa Rica 2
IQ - Iraq 2
LT - Lituania 2
MD - Moldavia 2
SC - Seychelles 2
TN - Tunisia 2
AE - Emirati Arabi Uniti 1
AR - Argentina 1
BZ - Belize 1
DO - Repubblica Dominicana 1
EG - Egitto 1
GE - Georgia 1
GW - Guinea-Bissau 1
IS - Islanda 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
MK - Macedonia 1
MU - Mauritius 1
MY - Malesia 1
NZ - Nuova Zelanda 1
PE - Perù 1
PH - Filippine 1
PT - Portogallo 1
PY - Paraguay 1
SA - Arabia Saudita 1
UZ - Uzbekistan 1
Totale 14.630
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Città #
Ann Arbor 1.993
Frankfurt am Main 628
Woodbridge 599
Singapore 586
Chandler 573
Fairfield 495
Houston 410
Milan 408
Dublin 367
Ashburn 321
Hong Kong 308
Wilmington 289
Jacksonville 266
Santa Clara 241
Dearborn 201
Seattle 199
New York 175
Princeton 173
Dong Ket 156
Cambridge 152
Nanjing 126
Vienna 122
Guangzhou 92
Beijing 71
Council Bluffs 70
Jakarta 68
Moscow 66
Altamura 61
Shanghai 61
Dresden 60
Boardman 47
Lawrence 45
Lachine 43
Southend 43
Nanchang 36
Helsinki 32
San Diego 32
Hefei 28
Los Angeles 28
Andover 24
Chicago 24
Norwalk 24
Ottawa 24
Valladolid 23
Brussels 22
Shenyang 22
Hebei 20
Turin 20
Hangzhou 19
Jiaxing 18
London 18
Tianjin 18
Toronto 17
Jinan 16
Monza 15
Sacramento 15
Changsha 14
Columbus 14
Düsseldorf 14
Kunming 14
Pune 14
Falls Church 13
Lausanne 13
Torino 13
Fremont 12
Nuremberg 12
Phoenix 12
Rome 12
Taizhou 12
Dallas 11
Marburg 11
Ningbo 11
Amsterdam 10
Ardea 10
Eindhoven 10
Mountain View 10
Munich 10
São Paulo 10
Cinisello Balsamo 9
Grafing 9
Lappeenranta 9
Urgnano 9
Zhengzhou 9
Edmonton 8
Grumello del Monte 8
Lauterbourg 8
Parma 8
Nürnberg 7
Redmond 7
Sesto Fiorentino 7
Abidjan 6
Bologna 6
Chemnitz 6
Chittagong 6
Fabriano 6
Lanzhou 6
Miyamae Ku 6
Arcore 5
Bishkek 5
Brooklyn 5
Totale 10.427
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Nome #
Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study 357
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 347
Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling 341
Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates 335
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A 324
Sunburst pattern by kinetic segregation in core-shell nanowires: A phase-field study 291
Slip trace-induced terrace erosion 259
Growth and coalescence of 3c-sic on si(111) micro-pillars by a phase-field approach 248
Dislocation-free SiGe/Si heterostructures 240
"Divide et impera" in detector technology 237
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film 235
Optically reconfigurable polarized emission in Germanium 227
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 224
Strain engineering in Ge/GeSn core/shell nanowires 224
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment 222
A Structural Characterization of GaAs MBE Grown on Si Pillars 211
Faceting of equilibrium and metastable nanostructures: A phase-field model of surface diffusion tackling realistic shapes 205
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars 202
3D heteroepitaxy of mismatched semiconductors on silicon 195
Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays 192
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 190
Dynamics of pit filling in heteroepitaxy via phase-field simulations 188
Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture 186
Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires 183
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si 176
Temperature-dependent evolution of the wetting layer thickness during Ge deposition on Si(001) 175
Anomalous Smoothing Preceding Island Formation During Growth on Patterned Substrates 174
Modelling the kinetic growth mode of GaAs nanomembranes 171
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 169
Space-filling Arrays of Three-Dimensional Epitaxial Ge and Si 1-xGe x Crystals 164
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 164
Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars 164
Continuum Modeling of cyclic growth in Ge/Si(001) heteroepitaxy 163
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 163
Three dimensional heteroepitaxy: A new path for monolithically integrating mismatched materials with silicon 158
Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates 157
A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD 157
Morphological evolution of Ge/Si nano-strips driven by Rayleigh-like instability 156
Ge Crystals on Si Show Their Light 155
Continuum modeling of heteroepitaxial growth in semiconductors 155
Scaling Hetero-Epitaxy from Layers to Three-Dimensional Crystals 154
Continuum modelling of semiconductor heteroepitaxy: an applied perspective 149
Self-aligned epitaxy in a mask-less deposition with kinetic and geometric constraints 146
Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001) 146
Faceting of Equilibrium and Metastable Nano- and Micro- structures: A Phase-Field Model of Surface Diffusion Tackling Realistic Shapes 144
Morphological evolution and compositional segregation effects in core-shell nanowires 143
Continuum modeling of Ge/Si heteroepitaxy in the presence of misfit dislocations 141
Continuum models of heteroepitaxial growth on patterned substrates 140
In-Plane Nanowire Growth of Topological Crystalline Insulator Pb₁₋ₓSnₓTe 140
Phase-field modeling of the morphological evolution of ringlike structures during growth: Thermodynamics, kinetics, and template effects 139
3D heteroepitaxy on patterned Si substrates: a new monolithic integration strategy 138
The interplay of morphological and compositional evolution in crystal growth: a phase-field model 137
Motion of crystalline inclusions by interface diffusion in the proximity of free surfaces 136
Continuum modeling of heteroepitaxial growth: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing 135
Modeling the competition between elastic and plastic relaxation in semiconductor heteroepitaxy: From cyclic growth to flat films 135
Strain and strain-driven effects in coaxial nanowires 134
Modeling semiconductor heteroepitaxy: a continuum approach 133
Kinetic growth mode of epitaxial GaAs on Si(001) micro-pillars 130
Modeling simultaneous elastic and plastic relaxation during Ge deposition on Si(001) 130
Enhancing radiative recombination in heteroepitaxial systems: three dimensional Ge-crystals 129
Dynamics of pit filling in heteroepitaxy via phase-field simulations 129
Faceting of Si and Ge crystals grown on deeply patterned Si substrates in the kinetic regime: phase-field modelling and experiments 129
Kinetic growth and surface faceting of vertical micro- and nano-structures: theory and experiments 128
Phase-field modelling of compositional segregation during the growth of core-shell nanowires 128
Engineered coalescence of three-dimensional Ge microcrystals into high-quality suspended layers on Si pillars 126
Phase‐Field modeling of semiconductor heteroepitaxy: elastic relaxation, surface energy minimization and intermixing 126
Monolithic integration of GaAs on deeply patterned Si substrates by self-assembled arrays of three-dimensional microcrystals 125
Strain relaxation in semiconductor core/shell nanowires 124
Optimal growth conditions for selective Ge islands positioning on pit-patterned Si(001) 123
Heteroepitaxy in out-of-equilibrium conditions on dense Si-pillar arrays: a new monolithic integration strategy 121
Fast pit filling and 3D island formation during Ge deposition on pit-patterned Si(001) substrates 120
Modeling the kinetic-driven morphological evolution in the 3D epitaxy of semiconductor micro- and nano-structures 120
Epitaxial Ge-crystal arrays for X-ray detection 119
The interplay of morphological and compositional evolution in heteroepitaxy: a Phase-Field model 117
Semiconductor heteroepitaxy 117
Continuum model of cyclic growth induced by dislocations in SiGe/Si heteroepitaxy 115
The interplay of morphology, composition and strain in metastable Ge/GeSn core/shell nanowires 115
Simulations of strained films evolution: extending accessible timescales through Convolutional Neural Networks 109
Understanding the kinetics segregation in core-shell nanowires: a phase-field approach 109
Dislocation assessment and their elimination in high-quality Ge microcrystals integrated on deeply patterned Si (001) substrates 107
Photoluminescence of bulk-quality 3D Ge crystal arrays on Si (001) 107
Morphological evolution via surface diffusion learned by convolutional, recurrent neural networks: Extrapolation and prediction uncertainty 105
Modeling the competition between elastic and plastic relaxation in semiconductor heteroepitaxy: From cyclic growth to flat films 101
Continuum modeling of the heteroepitaxial growth of semiconductor nanostructures 99
Three-dimensional EpitaxialSi1-xGex, Ge and SiC Crystals onDeeply Patterned Si substrates 95
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy 93
Continuum modeling of 3D semiconductor epitaxy: thermodynamic and kinetic driving forces behind morphological and compositional evolution 93
Semiconductor Heteroepitaxy 91
Modelling the kinetic growth and faceting of vertical micro- and nano-structures on Si 83
Continuum model of out-of-equilibrium crystal growth: theory and experiments 75
Quantitative analysis of the prediction performance of a Convolutional Neural Network evaluating the surface elastic energy of a strained film 73
Near-Infrared Light Trapping and Avalanche Multiplication in Silicon Epitaxial Microcrystals 72
Interplay of crystal faceting, wetting interactions and substrate geometry in solid-state dewetting and selective-area growth: a phase-field approach 70
Doubling the mobility of InAs/InGaAs selective area grown nanowires 63
Convolutional Recurrent Neural Networks for tackling materials dynamics at the mesoscale 48
Kinetic-control of morphology and composition during the 3D growth of semiconductor nanostructures 47
Simulations of strained films evolution: extending accessible timescales through Convolutional Neural Networks 43
Interface energies of Ga2O3 phases with the sapphire substrate and the phase-locked epitaxy of metastable structures explained 38
Accelerating Crystal Growth Simulations by Convolutional Neural Networks 38
Ge and Si Microcrystal Photodetectors with Enhanced Infrared Responsivity 37
Totale 15.141
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Categoria #
all - tutte 53.439
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 53.439
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202051 0 0 0 0 0 0 0 0 0 0 0 51
2020/20211.975 76 95 179 206 143 147 150 149 167 191 143 329
2021/20221.817 149 188 209 209 124 118 94 107 86 165 128 240
2022/20232.312 244 605 260 293 157 347 13 99 165 28 41 60
2023/20241.371 53 78 77 51 208 321 226 45 85 18 28 181
2024/20253.202 186 466 210 151 309 238 251 218 303 571 299 0
Totale 15.283