Bicocca Open Archive

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BERGAMASCHINI, ROBERTO
 Distribuzione geografica
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Continente #
NA - Nord America 9.004
AS - Asia 5.191
EU - Europa 4.951
SA - Sud America 662
AF - Africa 94
OC - Oceania 7
Continente sconosciuto - Info sul continente non disponibili 6
Totale 19.915
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Nazione #
US - Stati Uniti d'America 8.816
SG - Singapore 1.808
CN - Cina 1.358
IT - Italia 1.055
DE - Germania 1.007
HK - Hong Kong 795
RU - Federazione Russa 738
VN - Vietnam 685
BR - Brasile 545
SE - Svezia 492
IE - Irlanda 391
GB - Regno Unito 262
UA - Ucraina 241
FR - Francia 154
AT - Austria 148
CA - Canada 142
FI - Finlandia 129
IN - India 101
ID - Indonesia 84
ES - Italia 76
BD - Bangladesh 68
TR - Turchia 58
NL - Olanda 57
KR - Corea 54
AR - Argentina 48
DK - Danimarca 48
ZA - Sudafrica 48
CH - Svizzera 45
JP - Giappone 43
BE - Belgio 28
MX - Messico 28
PL - Polonia 26
PK - Pakistan 23
EC - Ecuador 22
IQ - Iraq 16
MA - Marocco 15
TW - Taiwan 15
CO - Colombia 13
LT - Lituania 13
IL - Israele 10
SA - Arabia Saudita 10
VE - Venezuela 10
AZ - Azerbaigian 8
CI - Costa d'Avorio 7
PY - Paraguay 7
UY - Uruguay 7
UZ - Uzbekistan 7
CZ - Repubblica Ceca 6
EU - Europa 6
KG - Kirghizistan 6
AL - Albania 5
AU - Australia 5
JO - Giordania 5
PE - Perù 5
TH - Thailandia 5
TN - Tunisia 5
BG - Bulgaria 4
CL - Cile 4
EG - Egitto 4
GR - Grecia 4
HU - Ungheria 4
JM - Giamaica 4
NP - Nepal 4
AE - Emirati Arabi Uniti 3
BH - Bahrain 3
IR - Iran 3
LU - Lussemburgo 3
LV - Lettonia 3
MY - Malesia 3
PH - Filippine 3
RO - Romania 3
TT - Trinidad e Tobago 3
BB - Barbados 2
BY - Bielorussia 2
BZ - Belize 2
CR - Costa Rica 2
GA - Gabon 2
GE - Georgia 2
KE - Kenya 2
KH - Cambogia 2
KZ - Kazakistan 2
MD - Moldavia 2
OM - Oman 2
PA - Panama 2
PS - Palestinian Territory 2
SC - Seychelles 2
TG - Togo 2
AO - Angola 1
BA - Bosnia-Erzegovina 1
BO - Bolivia 1
DO - Repubblica Dominicana 1
DZ - Algeria 1
ET - Etiopia 1
GW - Guinea-Bissau 1
IS - Islanda 1
KW - Kuwait 1
LA - Repubblica Popolare Democratica del Laos 1
LB - Libano 1
MK - Macedonia 1
MU - Mauritius 1
Totale 19.907
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Città #
Ann Arbor 1.993
Singapore 1.017
Hong Kong 780
Ashburn 643
Frankfurt am Main 633
Woodbridge 599
Chandler 573
Fairfield 495
Milan 442
Houston 415
Dublin 370
Wilmington 289
Dallas 275
Jacksonville 267
Santa Clara 249
Beijing 246
Seattle 204
Dearborn 201
New York 193
Princeton 173
Dong Ket 156
Ho Chi Minh City 156
Cambridge 152
Hanoi 144
Hefei 133
Los Angeles 132
Nanjing 131
Vienna 126
Guangzhou 103
Shanghai 72
Council Bluffs 71
Jakarta 70
Buffalo 69
Moscow 66
Altamura 61
Dresden 60
São Paulo 57
Chicago 50
The Dalles 50
Boardman 47
Lawrence 45
Seoul 44
Lachine 43
Southend 43
Helsinki 38
Nanchang 36
San Diego 33
Munich 30
Valladolid 29
London 27
Tokyo 25
Andover 24
Norwalk 24
Ottawa 24
Montreal 23
Phoenix 23
Shenyang 23
Turin 23
Brooklyn 22
Brussels 22
Hangzhou 22
Lausanne 22
Toronto 22
Amsterdam 21
Changsha 20
Dhaka 20
Hebei 20
Jinan 20
Turku 20
Kent 19
Tianjin 19
Haiphong 18
Jiaxing 18
Johannesburg 18
Warsaw 18
Columbus 17
Denver 17
Monza 16
Redondo Beach 16
Rome 16
Sacramento 16
Düsseldorf 15
Poplar 15
Pune 15
Stockholm 15
Da Nang 14
Kunming 14
Lappeenranta 14
Nuremberg 14
Orem 14
Saclay 14
Boston 13
Falls Church 13
San Francisco 13
Torino 13
Brasília 12
Fremont 12
Ningbo 12
Rio de Janeiro 12
Taizhou 12
Totale 13.215
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Nome #
Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study 411
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 393
Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling 389
Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates 376
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A 368
Sunburst pattern by kinetic segregation in core-shell nanowires: A phase-field study 323
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 288
Optically reconfigurable polarized emission in Germanium 286
Dislocation-free SiGe/Si heterostructures 284
Slip trace-induced terrace erosion 284
Growth and coalescence of 3c-sic on si(111) micro-pillars by a phase-field approach 283
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film 279
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment 278
A Structural Characterization of GaAs MBE Grown on Si Pillars 277
"Divide et impera" in detector technology 277
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars 266
Strain engineering in Ge/GeSn core/shell nanowires 256
Faceting of equilibrium and metastable nanostructures: A phase-field model of surface diffusion tackling realistic shapes 243
3D heteroepitaxy of mismatched semiconductors on silicon 230
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 230
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si 225
Dynamics of pit filling in heteroepitaxy via phase-field simulations 222
Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays 220
Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars 220
Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture 218
Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires 216
Modelling the kinetic growth mode of GaAs nanomembranes 210
In-Plane Nanowire Growth of Topological Crystalline Insulator Pb₁₋ₓSnₓTe 210
Simulating morphological evolutions by Convolutional Neural Networks 206
Simulations of strained films evolution: extending accessible timescales through Convolutional Neural Networks 206
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 206
Continuum modeling of heteroepitaxial growth in semiconductors 204
Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates 202
Temperature-dependent evolution of the wetting layer thickness during Ge deposition on Si(001) 200
Anomalous Smoothing Preceding Island Formation During Growth on Patterned Substrates 198
Accelerating simulations of strained-film growth by deep learning: Finite element method accuracy over long time scales 197
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 197
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 196
Space-filling Arrays of Three-Dimensional Epitaxial Ge and Si 1-xGe x Crystals 195
Ge Crystals on Si Show Their Light 194
Three dimensional heteroepitaxy: A new path for monolithically integrating mismatched materials with silicon 193
3D heteroepitaxy on patterned Si substrates: a new monolithic integration strategy 192
Continuum Modeling of cyclic growth in Ge/Si(001) heteroepitaxy 192
Scaling Hetero-Epitaxy from Layers to Three-Dimensional Crystals 189
Continuum modelling of semiconductor heteroepitaxy: an applied perspective 187
A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD 187
Morphological evolution and compositional segregation effects in core-shell nanowires 186
Simulations of strained films evolution: extending accessible timescales through Convolutional Neural Networks 185
Phase‐Field modeling of semiconductor heteroepitaxy: elastic relaxation, surface energy minimization and intermixing 185
Continuum models of heteroepitaxial growth on patterned substrates 183
Phase-field modeling of the morphological evolution of ringlike structures during growth: Thermodynamics, kinetics, and template effects 183
Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001) 181
Self-aligned epitaxy in a mask-less deposition with kinetic and geometric constraints 177
Engineered coalescence of three-dimensional Ge microcrystals into high-quality suspended layers on Si pillars 177
Morphological evolution of Ge/Si nano-strips driven by Rayleigh-like instability 177
Morphological evolution via surface diffusion learned by convolutional, recurrent neural networks: Extrapolation and prediction uncertainty 175
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy 172
Continuum modeling of Ge/Si heteroepitaxy in the presence of misfit dislocations 171
Kinetic growth and surface faceting of vertical micro- and nano-structures: theory and experiments 171
Interpretation of the competition between beta and kappa phases with supersaturation in MOVPE growth of Ga2O3 on c-oriented sapphire 170
Continuum modeling of heteroepitaxial growth: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing 170
Kinetic growth mode of epitaxial GaAs on Si(001) micro-pillars 170
Faceting of Equilibrium and Metastable Nano- and Micro- structures: A Phase-Field Model of Surface Diffusion Tackling Realistic Shapes 168
Enhancing radiative recombination in heteroepitaxial systems: three dimensional Ge-crystals 167
Faceting of Si and Ge crystals grown on deeply patterned Si substrates in the kinetic regime: phase-field modelling and experiments 166
Monolithic integration of GaAs on deeply patterned Si substrates by self-assembled arrays of three-dimensional microcrystals 165
Continuum modeling of 3D semiconductor epitaxy: thermodynamic and kinetic driving forces behind morphological and compositional evolution 164
Modeling the competition between elastic and plastic relaxation in semiconductor heteroepitaxy: From cyclic growth to flat films 164
Modeling semiconductor heteroepitaxy: a continuum approach 162
Phase-field modelling of compositional segregation during the growth of core-shell nanowires 160
Strain and strain-driven effects in coaxial nanowires 159
The interplay of morphological and compositional evolution in crystal growth: a phase-field model 158
Modeling simultaneous elastic and plastic relaxation during Ge deposition on Si(001) 157
Quantitative analysis of the prediction performance of a Convolutional Neural Network evaluating the surface elastic energy of a strained film 157
Modeling the kinetic-driven morphological evolution in the 3D epitaxy of semiconductor micro- and nano-structures 155
Dislocation assessment and their elimination in high-quality Ge microcrystals integrated on deeply patterned Si (001) substrates 154
Photoluminescence of bulk-quality 3D Ge crystal arrays on Si (001) 152
Interplay of crystal faceting, wetting interactions and substrate geometry in solid-state dewetting and selective-area growth: a phase-field approach 152
Dynamics of pit filling in heteroepitaxy via phase-field simulations 151
Semiconductor heteroepitaxy 151
Motion of crystalline inclusions by interface diffusion in the proximity of free surfaces 151
Near-Infrared Light Trapping and Avalanche Multiplication in Silicon Epitaxial Microcrystals 150
Fast pit filling and 3D island formation during Ge deposition on pit-patterned Si(001) substrates 150
Heteroepitaxy in out-of-equilibrium conditions on dense Si-pillar arrays: a new monolithic integration strategy 149
Optimal growth conditions for selective Ge islands positioning on pit-patterned Si(001) 149
Strain relaxation in semiconductor core/shell nanowires 147
Continuum model of cyclic growth induced by dislocations in SiGe/Si heteroepitaxy 145
Epitaxial Ge-crystal arrays for X-ray detection 145
The interplay of morphological and compositional evolution in heteroepitaxy: a Phase-Field model 139
The interplay of morphology, composition and strain in metastable Ge/GeSn core/shell nanowires 138
Understanding the kinetics segregation in core-shell nanowires: a phase-field approach 137
Semiconductor Heteroepitaxy 136
Interface energies of Ga2O3 phases with the sapphire substrate and the phase-locked epitaxy of metastable structures explained 134
Extreme time extrapolation capabilities and thermodynamic consistency of physics-inspired neural networks for the 3D microstructure evolution of materials via Cahn–Hilliard flow 133
Modeling the competition between elastic and plastic relaxation in semiconductor heteroepitaxy: From cyclic growth to flat films 131
Convolutional Recurrent Neural Networks for tackling materials dynamics at the mesoscale 129
Continuum modeling of the heteroepitaxial growth of semiconductor nanostructures 125
Three-dimensional EpitaxialSi1-xGex, Ge and SiC Crystals onDeeply Patterned Si substrates 120
Accelerating Crystal Growth Simulations by Convolutional Neural Networks 119
Modelling the kinetic growth and faceting of vertical micro- and nano-structures on Si 116
Totale 19.741
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Categoria #
all - tutte 67.026
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 67.026
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.276 0 0 0 0 0 147 150 149 167 191 143 329
2021/20221.817 149 188 209 209 124 118 94 107 86 165 128 240
2022/20232.312 244 605 260 293 157 347 13 99 165 28 41 60
2023/20241.371 53 78 77 51 208 321 226 45 85 18 28 181
2024/20254.136 186 466 210 151 309 238 251 218 303 571 299 934
2025/20264.366 868 582 887 679 967 383 0 0 0 0 0 0
Totale 20.583