Bicocca Open Archive

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BERGAMASCHINI, ROBERTO
 Distribuzione geografica
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Continente #
NA - Nord America 15.977
AS - Asia 7.018
EU - Europa 5.990
SA - Sud America 903
Continente sconosciuto - Info sul continente non disponibili 690
AF - Africa 189
OC - Oceania 11
Totale 30.778
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Nazione #
US - Stati Uniti d'America 15.288
SG - Singapore 2.377
IT - Italia 1.665
CN - Cina 1.528
VN - Vietnam 1.173
DE - Germania 1.040
HK - Hong Kong 845
RU - Federazione Russa 755
BR - Brasile 660
CA - Canada 579
SE - Svezia 507
IE - Irlanda 396
GB - Regno Unito 338
FR - Francia 271
UA - Ucraina 255
IN - India 200
BD - Bangladesh 165
AT - Austria 153
FI - Finlandia 149
KR - Corea 114
ES - Italia 108
ID - Indonesia 102
TR - Turchia 93
AR - Argentina 83
CH - Svizzera 79
IQ - Iraq 70
NL - Olanda 67
ZA - Sudafrica 65
PK - Pakistan 57
JP - Giappone 56
DK - Danimarca 51
MX - Messico 46
CO - Colombia 42
EC - Ecuador 41
SA - Arabia Saudita 37
PL - Polonia 34
PH - Filippine 31
BE - Belgio 30
MA - Marocco 25
VE - Venezuela 24
MY - Malesia 20
TW - Taiwan 19
JM - Giamaica 18
CL - Cile 17
UZ - Uzbekistan 17
LT - Lituania 14
AZ - Azerbaigian 13
ET - Etiopia 13
TN - Tunisia 13
PY - Paraguay 12
IL - Israele 11
AE - Emirati Arabi Uniti 10
EG - Egitto 10
SC - Seychelles 10
UY - Uruguay 10
AL - Albania 9
CR - Costa Rica 9
CZ - Repubblica Ceca 9
PS - Palestinian Territory 9
AU - Australia 8
CI - Costa d'Avorio 8
DZ - Algeria 8
JO - Giordania 8
KG - Kirghizistan 8
TH - Thailandia 8
HU - Ungheria 7
NP - Nepal 7
OM - Oman 7
PE - Perù 7
TT - Trinidad e Tobago 7
EU - Europa 6
GR - Grecia 6
LB - Libano 6
PT - Portogallo 6
RS - Serbia 6
SN - Senegal 6
BG - Bulgaria 5
BY - Bielorussia 5
GE - Georgia 5
HN - Honduras 5
KE - Kenya 5
KZ - Kazakistan 5
LY - Libia 5
PA - Panama 5
BO - Bolivia 4
DO - Repubblica Dominicana 4
GT - Guatemala 4
RO - Romania 4
AO - Angola 3
BB - Barbados 3
BH - Bahrain 3
EE - Estonia 3
IR - Iran 3
LU - Lussemburgo 3
LV - Lettonia 3
MD - Moldavia 3
NI - Nicaragua 3
ZW - Zimbabwe 3
BZ - Belize 2
GA - Gabon 2
Totale 30.051
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Città #
Ashburn 3.854
Ann Arbor 1.993
Singapore 1.376
San Jose 971
Hong Kong 820
Milan 671
Frankfurt am Main 642
Woodbridge 600
Chandler 573
Fairfield 496
Houston 424
Toronto 399
Dublin 373
Council Bluffs 308
Dallas 304
Ho Chi Minh City 296
Wilmington 293
Santa Clara 290
Jacksonville 276
Hanoi 272
Beijing 261
New York 235
Seattle 214
Dearborn 201
Los Angeles 193
Princeton 176
Chicago 174
Dong Ket 156
The Dalles 155
Cambridge 152
Hefei 134
Nanjing 132
Vienna 126
Guangzhou 103
Lauterbourg 101
Seoul 100
Rome 93
Buffalo 83
Columbus 78
Shanghai 76
Jakarta 71
São Paulo 71
Moscow 67
Dresden 64
Altamura 61
Phoenix 55
Boardman 54
Helsinki 53
Lawrence 47
Lachine 43
Southend 43
Haiphong 41
Orem 39
San Diego 38
Valladolid 38
Montreal 37
Zurich 37
London 36
Nanchang 36
Turin 36
Da Nang 32
Tokyo 32
Brooklyn 31
Denver 31
Atlanta 30
Munich 30
Norwalk 27
Basingstoke 26
Naples 26
Baghdad 25
Dhaka 25
Ottawa 25
Andover 24
Washington 24
Amsterdam 23
Hangzhou 23
Sacramento 23
Shenyang 23
Warsaw 23
Brussels 22
Lahore 22
Lausanne 22
Boston 21
Changsha 21
Hebei 20
Jinan 20
Johannesburg 20
Kent 20
Turku 20
Lappeenranta 19
Pune 19
San Francisco 19
Tianjin 19
Jiaxing 18
Philadelphia 18
Riyadh 18
Brasília 17
Chennai 17
Figino 17
Mumbai 17
Totale 20.050
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Nome #
Continuum models of heteroepitaxial growth on patterned substrates 3.026
Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling 481
Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study 470
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 450
Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates 443
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A 424
Sunburst pattern by kinetic segregation in core-shell nanowires: A phase-field study 384
Dislocation-free SiGe/Si heterostructures 376
Optically reconfigurable polarized emission in Germanium 366
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 365
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment 346
Growth and coalescence of 3c-sic on si(111) micro-pillars by a phase-field approach 343
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars 340
A Structural Characterization of GaAs MBE Grown on Si Pillars 336
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film 334
"Divide et impera" in detector technology 329
Slip trace-induced terrace erosion 326
Faceting of equilibrium and metastable nanostructures: A phase-field model of surface diffusion tackling realistic shapes 317
Strain engineering in Ge/GeSn core/shell nanowires 309
Simulations of strained films evolution: extending accessible timescales through Convolutional Neural Networks 307
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 306
Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars 294
3D heteroepitaxy of mismatched semiconductors on silicon 286
3D heteroepitaxy on patterned Si substrates: a new monolithic integration strategy 286
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si 286
Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates 284
Accelerating simulations of strained-film growth by deep learning: Finite element method accuracy over long time scales 283
In-Plane Nanowire Growth of Topological Crystalline Insulator Pb₁₋ₓSnₓTe 279
Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture 277
Phase-field modeling of the morphological evolution of ringlike structures during growth: Thermodynamics, kinetics, and template effects 277
Dynamics of pit filling in heteroepitaxy via phase-field simulations 273
Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires 270
Quantitative analysis of the prediction performance of a Convolutional Neural Network evaluating the surface elastic energy of a strained film 270
Simulating morphological evolutions by Convolutional Neural Networks 267
Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays 267
Space-filling Arrays of Three-Dimensional Epitaxial Ge and Si 1-xGe x Crystals 267
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 266
Engineered coalescence of three-dimensional Ge microcrystals into high-quality suspended layers on Si pillars 266
Interpretation of the competition between beta and kappa phases with supersaturation in MOVPE growth of Ga2O3 on c-oriented sapphire 263
Interface energies of Ga2O3 phases with the sapphire substrate and the phase-locked epitaxy of metastable structures explained 263
Continuum modeling of heteroepitaxial growth in semiconductors 263
Modelling the kinetic growth mode of GaAs nanomembranes 262
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 260
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy 256
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 255
Simulations of strained films evolution: extending accessible timescales through Convolutional Neural Networks 254
Continuum Modeling of cyclic growth in Ge/Si(001) heteroepitaxy 254
Continuum modelling of semiconductor heteroepitaxy: an applied perspective 254
Ge Crystals on Si Show Their Light 252
Phase‐Field modeling of semiconductor heteroepitaxy: elastic relaxation, surface energy minimization and intermixing 252
Morphological evolution and compositional segregation effects in core-shell nanowires 252
Anomalous Smoothing Preceding Island Formation During Growth on Patterned Substrates 251
Three dimensional heteroepitaxy: A new path for monolithically integrating mismatched materials with silicon 251
Scaling Hetero-Epitaxy from Layers to Three-Dimensional Crystals 249
Kinetic growth and surface faceting of vertical micro- and nano-structures: theory and experiments 247
Temperature-dependent evolution of the wetting layer thickness during Ge deposition on Si(001) 240
A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD 239
Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001) 238
Continuum modeling of heteroepitaxial growth: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing 237
Morphological evolution via surface diffusion learned by convolutional, recurrent neural networks: Extrapolation and prediction uncertainty 233
Near-Infrared Light Trapping and Avalanche Multiplication in Silicon Epitaxial Microcrystals 231
Faceting of Equilibrium and Metastable Nano- and Micro- structures: A Phase-Field Model of Surface Diffusion Tackling Realistic Shapes 229
Continuum modeling of Ge/Si heteroepitaxy in the presence of misfit dislocations 228
Monolithic integration of GaAs on deeply patterned Si substrates by self-assembled arrays of three-dimensional microcrystals 223
Self-aligned epitaxy in a mask-less deposition with kinetic and geometric constraints 223
Convolutional Recurrent Neural Networks for tackling materials dynamics at the mesoscale 222
Modeling the competition between elastic and plastic relaxation in semiconductor heteroepitaxy: From cyclic growth to flat films 222
Modeling the kinetic-driven morphological evolution in the 3D epitaxy of semiconductor micro- and nano-structures 222
Kinetic growth mode of epitaxial GaAs on Si(001) micro-pillars 219
Faceting of Si and Ge crystals grown on deeply patterned Si substrates in the kinetic regime: phase-field modelling and experiments 219
Enhancing radiative recombination in heteroepitaxial systems: three dimensional Ge-crystals 218
Dislocation assessment and their elimination in high-quality Ge microcrystals integrated on deeply patterned Si (001) substrates 218
Phase-field modelling of compositional segregation during the growth of core-shell nanowires 217
Morphological evolution of Ge/Si nano-strips driven by Rayleigh-like instability 216
Modeling semiconductor heteroepitaxy: a continuum approach 212
Photoluminescence of bulk-quality 3D Ge crystal arrays on Si (001) 211
Interplay of crystal faceting, wetting interactions and substrate geometry in solid-state dewetting and selective-area growth: a phase-field approach 211
Strain and strain-driven effects in coaxial nanowires 208
Semiconductor heteroepitaxy 207
Fast pit filling and 3D island formation during Ge deposition on pit-patterned Si(001) substrates 206
Continuum modeling of 3D semiconductor epitaxy: thermodynamic and kinetic driving forces behind morphological and compositional evolution 205
A Neural-Network surrogate for microstructure dynamics and crystal growth 205
Extreme time extrapolation capabilities and thermodynamic consistency of physics-inspired neural networks for the 3D microstructure evolution of materials via Cahn–Hilliard flow 205
Modeling simultaneous elastic and plastic relaxation during Ge deposition on Si(001) 205
ML-enabled boosting of growth simulations 204
The interplay of morphological and compositional evolution in crystal growth: a phase-field model 204
Heteroepitaxy in out-of-equilibrium conditions on dense Si-pillar arrays: a new monolithic integration strategy 202
Strain relaxation in semiconductor core/shell nanowires 200
Progressing strained layer growth by deep learning 198
Epitaxial Ge-crystal arrays for X-ray detection 196
Accelerating Crystal Growth Simulations by Convolutional Neural Networks 195
Continuum model of cyclic growth induced by dislocations in SiGe/Si heteroepitaxy 195
Dynamics of pit filling in heteroepitaxy via phase-field simulations 194
Modeling the competition between elastic and plastic relaxation in semiconductor heteroepitaxy: From cyclic growth to flat films 193
The interplay of morphology, composition and strain in metastable Ge/GeSn core/shell nanowires 192
Optimal growth conditions for selective Ge islands positioning on pit-patterned Si(001) 192
Semiconductor Heteroepitaxy 191
Motion of crystalline inclusions by interface diffusion in the proximity of free surfaces 187
The interplay of morphological and compositional evolution in heteroepitaxy: a Phase-Field model 186
Understanding the kinetics segregation in core-shell nanowires: a phase-field approach 184
Totale 28.896
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Categoria #
all - tutte 90.188
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 90.188
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.271 0 0 0 209 124 118 94 107 86 165 128 240
2022/20232.312 244 605 260 293 157 347 13 99 165 28 41 60
2023/20241.371 53 78 77 51 208 321 226 45 85 18 28 181
2024/20254.136 186 466 210 151 309 238 251 218 303 571 299 934
2025/20269.469 868 582 887 679 967 479 1.510 451 842 782 653 769
2026/20275.092 332 470 1.087 3.203 0 0 0 0 0 0 0 0
Totale 30.778