Bicocca Open Archive

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BERGAMASCHINI, ROBERTO
 Distribuzione geografica
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Continente #
NA - Nord America 7.698
EU - Europa 4.616
AS - Asia 3.056
SA - Sud America 96
AF - Africa 36
Continente sconosciuto - Info sul continente non disponibili 6
OC - Oceania 4
Totale 15.512
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Nazione #
US - Stati Uniti d'America 7.577
DE - Germania 980
IT - Italia 980
SG - Singapore 836
HK - Hong Kong 734
RU - Federazione Russa 729
CN - Cina 728
SE - Svezia 482
VN - Vietnam 474
IE - Irlanda 388
UA - Ucraina 230
GB - Regno Unito 225
AT - Austria 142
CA - Canada 111
FR - Francia 106
FI - Finlandia 103
BR - Brasile 85
ID - Indonesia 69
ES - Italia 51
IN - India 49
DK - Danimarca 48
NL - Olanda 45
TR - Turchia 44
KR - Corea 39
CH - Svizzera 30
BE - Belgio 28
JP - Giappone 21
ZA - Sudafrica 19
PK - Pakistan 13
PL - Polonia 13
BD - Bangladesh 12
TW - Taiwan 9
IL - Israele 8
CI - Costa d'Avorio 6
CZ - Repubblica Ceca 6
EU - Europa 6
MX - Messico 6
KG - Kirghizistan 5
BG - Bulgaria 4
EC - Ecuador 4
GR - Grecia 4
HU - Ungheria 4
MA - Marocco 4
AU - Australia 3
IR - Iran 3
LU - Lussemburgo 3
LV - Lettonia 3
RO - Romania 3
AL - Albania 2
AZ - Azerbaigian 2
CL - Cile 2
CO - Colombia 2
CR - Costa Rica 2
IQ - Iraq 2
LT - Lituania 2
MD - Moldavia 2
SC - Seychelles 2
TN - Tunisia 2
AE - Emirati Arabi Uniti 1
AR - Argentina 1
BZ - Belize 1
DO - Repubblica Dominicana 1
EG - Egitto 1
GE - Georgia 1
GW - Guinea-Bissau 1
IS - Islanda 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
MK - Macedonia 1
MU - Mauritius 1
MY - Malesia 1
NZ - Nuova Zelanda 1
PE - Perù 1
PH - Filippine 1
PT - Portogallo 1
PY - Paraguay 1
SA - Arabia Saudita 1
UZ - Uzbekistan 1
Totale 15.512
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Città #
Ann Arbor 1.993
Hong Kong 720
Frankfurt am Main 630
Woodbridge 599
Singapore 593
Chandler 573
Fairfield 495
Houston 410
Milan 408
Dublin 367
Ashburn 334
Wilmington 289
Jacksonville 266
Santa Clara 241
Dearborn 201
Seattle 201
New York 176
Princeton 173
Dong Ket 156
Cambridge 152
Nanjing 126
Vienna 122
Guangzhou 92
Hanoi 92
Beijing 89
Ho Chi Minh City 80
Council Bluffs 70
Jakarta 68
Moscow 66
Altamura 61
Shanghai 61
Dresden 60
Boardman 47
Lawrence 45
Lachine 43
Southend 43
Hefei 39
Nanchang 36
Helsinki 32
San Diego 32
Los Angeles 30
Seoul 29
Andover 24
Chicago 24
Norwalk 24
Ottawa 24
Valladolid 23
Brussels 22
Shenyang 22
Hebei 20
London 20
Turin 20
Hangzhou 19
Kent 19
Jiaxing 18
Tianjin 18
Toronto 18
Jinan 16
Dallas 15
Monza 15
Munich 15
Sacramento 15
Changsha 14
Columbus 14
Düsseldorf 14
Kunming 14
Pune 14
Falls Church 13
Lausanne 13
Torino 13
Fremont 12
Nuremberg 12
Phoenix 12
Rome 12
Taizhou 12
Amsterdam 11
Marburg 11
Ningbo 11
Ardea 10
Eindhoven 10
Mountain View 10
Quận Bình Thạnh 10
São Paulo 10
Cinisello Balsamo 9
Grafing 9
Haiphong 9
Lappeenranta 9
Urgnano 9
Zhengzhou 9
Da Nang 8
Edmonton 8
Grumello del Monte 8
Lauterbourg 8
Parma 8
Nürnberg 7
Redmond 7
Sesto Fiorentino 7
Abidjan 6
Bologna 6
Brooklyn 6
Totale 11.116
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Nome #
Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study 364
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 356
Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling 345
Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates 337
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A 329
Sunburst pattern by kinetic segregation in core-shell nanowires: A phase-field study 295
Slip trace-induced terrace erosion 264
Growth and coalescence of 3c-sic on si(111) micro-pillars by a phase-field approach 250
Dislocation-free SiGe/Si heterostructures 245
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film 243
"Divide et impera" in detector technology 242
Optically reconfigurable polarized emission in Germanium 235
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 234
Strain engineering in Ge/GeSn core/shell nanowires 229
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment 227
A Structural Characterization of GaAs MBE Grown on Si Pillars 221
Faceting of equilibrium and metastable nanostructures: A phase-field model of surface diffusion tackling realistic shapes 215
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars 209
3D heteroepitaxy of mismatched semiconductors on silicon 200
Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays 197
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 192
Dynamics of pit filling in heteroepitaxy via phase-field simulations 191
Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture 190
Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires 187
Temperature-dependent evolution of the wetting layer thickness during Ge deposition on Si(001) 180
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si 180
Anomalous Smoothing Preceding Island Formation During Growth on Patterned Substrates 179
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 173
Modelling the kinetic growth mode of GaAs nanomembranes 173
Space-filling Arrays of Three-Dimensional Epitaxial Ge and Si 1-xGe x Crystals 171
Continuum Modeling of cyclic growth in Ge/Si(001) heteroepitaxy 169
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 169
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 168
Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars 167
Three dimensional heteroepitaxy: A new path for monolithically integrating mismatched materials with silicon 165
Morphological evolution of Ge/Si nano-strips driven by Rayleigh-like instability 161
Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates 160
A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD 160
Scaling Hetero-Epitaxy from Layers to Three-Dimensional Crystals 158
Ge Crystals on Si Show Their Light 158
Continuum modeling of heteroepitaxial growth in semiconductors 157
Self-aligned epitaxy in a mask-less deposition with kinetic and geometric constraints 152
Continuum modelling of semiconductor heteroepitaxy: an applied perspective 151
Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001) 151
Faceting of Equilibrium and Metastable Nano- and Micro- structures: A Phase-Field Model of Surface Diffusion Tackling Realistic Shapes 148
Morphological evolution and compositional segregation effects in core-shell nanowires 148
Continuum models of heteroepitaxial growth on patterned substrates 146
In-Plane Nanowire Growth of Topological Crystalline Insulator Pb₁₋ₓSnₓTe 146
3D heteroepitaxy on patterned Si substrates: a new monolithic integration strategy 145
Continuum modeling of Ge/Si heteroepitaxy in the presence of misfit dislocations 145
The interplay of morphological and compositional evolution in crystal growth: a phase-field model 143
Phase-field modeling of the morphological evolution of ringlike structures during growth: Thermodynamics, kinetics, and template effects 143
Simulating morphological evolutions by Convolutional Neural Networks 140
Strain and strain-driven effects in coaxial nanowires 140
Modeling the competition between elastic and plastic relaxation in semiconductor heteroepitaxy: From cyclic growth to flat films 139
Modeling semiconductor heteroepitaxy: a continuum approach 139
Continuum modeling of heteroepitaxial growth: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing 138
Motion of crystalline inclusions by interface diffusion in the proximity of free surfaces 138
Kinetic growth mode of epitaxial GaAs on Si(001) micro-pillars 136
Modeling simultaneous elastic and plastic relaxation during Ge deposition on Si(001) 136
Dynamics of pit filling in heteroepitaxy via phase-field simulations 136
Enhancing radiative recombination in heteroepitaxial systems: three dimensional Ge-crystals 135
Monolithic integration of GaAs on deeply patterned Si substrates by self-assembled arrays of three-dimensional microcrystals 135
Faceting of Si and Ge crystals grown on deeply patterned Si substrates in the kinetic regime: phase-field modelling and experiments 133
Accelerating simulations of strained-film growth by deep learning: Finite element method accuracy over long time scales 132
Kinetic growth and surface faceting of vertical micro- and nano-structures: theory and experiments 132
Engineered coalescence of three-dimensional Ge microcrystals into high-quality suspended layers on Si pillars 131
Phase‐Field modeling of semiconductor heteroepitaxy: elastic relaxation, surface energy minimization and intermixing 131
Phase-field modelling of compositional segregation during the growth of core-shell nanowires 130
Heteroepitaxy in out-of-equilibrium conditions on dense Si-pillar arrays: a new monolithic integration strategy 129
Strain relaxation in semiconductor core/shell nanowires 128
Optimal growth conditions for selective Ge islands positioning on pit-patterned Si(001) 126
Fast pit filling and 3D island formation during Ge deposition on pit-patterned Si(001) substrates 124
The interplay of morphological and compositional evolution in heteroepitaxy: a Phase-Field model 124
Modeling the kinetic-driven morphological evolution in the 3D epitaxy of semiconductor micro- and nano-structures 124
Simulations of strained films evolution: extending accessible timescales through Convolutional Neural Networks 123
The interplay of morphology, composition and strain in metastable Ge/GeSn core/shell nanowires 122
Semiconductor heteroepitaxy 121
Epitaxial Ge-crystal arrays for X-ray detection 121
Continuum model of cyclic growth induced by dislocations in SiGe/Si heteroepitaxy 120
Simulations of strained films evolution: extending accessible timescales through Convolutional Neural Networks 119
Photoluminescence of bulk-quality 3D Ge crystal arrays on Si (001) 116
Understanding the kinetics segregation in core-shell nanowires: a phase-field approach 113
Dislocation assessment and their elimination in high-quality Ge microcrystals integrated on deeply patterned Si (001) substrates 112
Morphological evolution via surface diffusion learned by convolutional, recurrent neural networks: Extrapolation and prediction uncertainty 111
Continuum modeling of the heteroepitaxial growth of semiconductor nanostructures 108
Modeling the competition between elastic and plastic relaxation in semiconductor heteroepitaxy: From cyclic growth to flat films 105
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy 101
Continuum modeling of 3D semiconductor epitaxy: thermodynamic and kinetic driving forces behind morphological and compositional evolution 101
Three-dimensional EpitaxialSi1-xGex, Ge and SiC Crystals onDeeply Patterned Si substrates 98
Semiconductor Heteroepitaxy 95
Modelling the kinetic growth and faceting of vertical micro- and nano-structures on Si 88
Quantitative analysis of the prediction performance of a Convolutional Neural Network evaluating the surface elastic energy of a strained film 87
Near-Infrared Light Trapping and Avalanche Multiplication in Silicon Epitaxial Microcrystals 79
Continuum model of out-of-equilibrium crystal growth: theory and experiments 77
Interplay of crystal faceting, wetting interactions and substrate geometry in solid-state dewetting and selective-area growth: a phase-field approach 77
Doubling the mobility of InAs/InGaAs selective area grown nanowires 68
Interpretation of the competition between beta and kappa phases with supersaturation in MOVPE growth of Ga2O3 on c-oriented sapphire 66
Accelerating Crystal Growth Simulations by Convolutional Neural Networks 55
Convolutional Recurrent Neural Networks for tackling materials dynamics at the mesoscale 55
Totale 15.957
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Categoria #
all - tutte 55.245
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 55.245
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202051 0 0 0 0 0 0 0 0 0 0 0 51
2020/20211.975 76 95 179 206 143 147 150 149 167 191 143 329
2021/20221.817 149 188 209 209 124 118 94 107 86 165 128 240
2022/20232.312 244 605 260 293 157 347 13 99 165 28 41 60
2023/20241.371 53 78 77 51 208 321 226 45 85 18 28 181
2024/20254.084 186 466 210 151 309 238 251 218 303 571 299 882
Totale 16.165