Predicted topological crystalline insulators such as Pb₁₋ₓSnₓTe are an interesting candidate for applications in quantum technology, as they can host spin-polarized surface states. Moreover, in the nanowire geometry, a quasi-1D system can be realized with potential applications exploiting Majorana fermions. Herein, the selective area growth of Pb₁₋ₓSnₓTe islands and nanowires over the full range of x is demonstrated, and their in-depth growth dynamics and faceting are analyzed. By transmission electron microscopy, the single-crystalline and defect-free nature of the grown material and the homogeneous, controllable Pb/Sn ratio in the nanowires is confirmed. With support of phase-field growth simulations, it is shown that the crystal faceting mainly follows the driving force of surface energy minimization, favoring the lowest energy {200} surfaces. A kinetic enhancement of adatom incorporation on {110} facets is recognized to limit their extension with respect to {200} and {111} facets. After inspecting all possible in-plane orientations, we identify the <110> directions as the optimal candidate for the growth of high-quality and perfectly straight Pb₁₋ₓSnₓTe nanowires, enabling the design of complex networks due to their threefold symmetry. This work opens the way to systematic transport investigation of the carrier density in Pb₁₋ₓSnₓTe nanowires and can facilitate further optimization of the Pb₁₋ₓSnₓTe system.

Schellingerhout, S., Bergamaschini, R., Verheijen, M., Montalenti, F., Miglio, L., Bakkers, E. (2023). In-Plane Nanowire Growth of Topological Crystalline Insulator Pb₁₋ₓSnₓTe. ADVANCED FUNCTIONAL MATERIALS, 33(50 (December 8, 2023)) [10.1002/adfm.202305542].

In-Plane Nanowire Growth of Topological Crystalline Insulator Pb₁₋ₓSnₓTe

Bergamaschini R.
Secondo
;
Montalenti F.;Miglio L.
Penultimo
;
2023

Abstract

Predicted topological crystalline insulators such as Pb₁₋ₓSnₓTe are an interesting candidate for applications in quantum technology, as they can host spin-polarized surface states. Moreover, in the nanowire geometry, a quasi-1D system can be realized with potential applications exploiting Majorana fermions. Herein, the selective area growth of Pb₁₋ₓSnₓTe islands and nanowires over the full range of x is demonstrated, and their in-depth growth dynamics and faceting are analyzed. By transmission electron microscopy, the single-crystalline and defect-free nature of the grown material and the homogeneous, controllable Pb/Sn ratio in the nanowires is confirmed. With support of phase-field growth simulations, it is shown that the crystal faceting mainly follows the driving force of surface energy minimization, favoring the lowest energy {200} surfaces. A kinetic enhancement of adatom incorporation on {110} facets is recognized to limit their extension with respect to {200} and {111} facets. After inspecting all possible in-plane orientations, we identify the <110> directions as the optimal candidate for the growth of high-quality and perfectly straight Pb₁₋ₓSnₓTe nanowires, enabling the design of complex networks due to their threefold symmetry. This work opens the way to systematic transport investigation of the carrier density in Pb₁₋ₓSnₓTe nanowires and can facilitate further optimization of the Pb₁₋ₓSnₓTe system.
Articolo in rivista - Articolo scientifico
nanowires; PbSnTe; selective area growth; topological insulators;
English
22-ago-2023
2023
33
50 (December 8, 2023)
2305542
open
Schellingerhout, S., Bergamaschini, R., Verheijen, M., Montalenti, F., Miglio, L., Bakkers, E. (2023). In-Plane Nanowire Growth of Topological Crystalline Insulator Pb₁₋ₓSnₓTe. ADVANCED FUNCTIONAL MATERIALS, 33(50 (December 8, 2023)) [10.1002/adfm.202305542].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/437818
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