We show that the density of indium islands on GaAs(111)A substrates have a non-monotonic, reentrant behavior as a function of the indium deposition temperature. The expected increase in the density with decreasing temperature, indeed, is observed only down to 160 ∘C, where the indium islands undertake the expected liquid-to-solid phase transition. Further decreasing the temperature causes a sizable reduction of the island density. An additional reentrant increasing behavior is observed below 80 ∘C. We attribute the above complex behavior to the liquid-solid phase transition and to the complex island-island interaction which takes place between crystalline islands in the presence of strain. Indium solid islands grown at temperatures below 160 ∘C have a face-centered cubic crystal structure.

Tuktamyshev, A., Fedorov, A., Bietti, S., Tsukamoto, S., Bergamaschini, R., Montalenti, F., et al. (2020). Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A. NANOMATERIALS, 10(8), 1-9 [10.3390/nano10081512].

Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A

Tuktamyshev, A
;
Bietti, S;Tsukamoto, S;Bergamaschini, R;Montalenti, F;Sanguinetti, S
2020

Abstract

We show that the density of indium islands on GaAs(111)A substrates have a non-monotonic, reentrant behavior as a function of the indium deposition temperature. The expected increase in the density with decreasing temperature, indeed, is observed only down to 160 ∘C, where the indium islands undertake the expected liquid-to-solid phase transition. Further decreasing the temperature causes a sizable reduction of the island density. An additional reentrant increasing behavior is observed below 80 ∘C. We attribute the above complex behavior to the liquid-solid phase transition and to the complex island-island interaction which takes place between crystalline islands in the presence of strain. Indium solid islands grown at temperatures below 160 ∘C have a face-centered cubic crystal structure.
Articolo in rivista - Articolo scientifico
GaAs(111)A, RHEED, droplet epitaxy, indium islands, liquid-solid transition
English
31-lug-2020
2020
10
8
1
9
1512
open
Tuktamyshev, A., Fedorov, A., Bietti, S., Tsukamoto, S., Bergamaschini, R., Montalenti, F., et al. (2020). Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A. NANOMATERIALS, 10(8), 1-9 [10.3390/nano10081512].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/282332
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