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PEZZOLI, FABIO
 Distribuzione geografica
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Continente #
NA - Nord America 10.268
EU - Europa 6.221
AS - Asia 2.870
SA - Sud America 143
AF - Africa 29
OC - Oceania 7
Continente sconosciuto - Info sul continente non disponibili 4
Totale 19.542
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Nazione #
US - Stati Uniti d'America 10.106
DE - Germania 1.260
IT - Italia 1.235
SG - Singapore 1.091
RU - Federazione Russa 1.030
CN - Cina 759
SE - Svezia 625
IE - Irlanda 562
GB - Regno Unito 369
UA - Ucraina 348
HK - Hong Kong 325
VN - Vietnam 301
AT - Austria 253
CA - Canada 150
FI - Finlandia 142
BR - Brasile 121
FR - Francia 120
IN - India 119
DK - Danimarca 81
ID - Indonesia 65
TR - Turchia 52
NL - Olanda 47
JP - Giappone 43
PK - Pakistan 41
BE - Belgio 38
CH - Svizzera 26
PL - Polonia 21
ES - Italia 20
KR - Corea 20
ZA - Sudafrica 13
CZ - Repubblica Ceca 10
TW - Taiwan 9
AR - Argentina 7
IL - Israele 7
BG - Bulgaria 6
CI - Costa d'Avorio 5
LV - Lettonia 5
MX - Messico 5
AZ - Azerbaigian 4
CL - Cile 4
EG - Egitto 4
NZ - Nuova Zelanda 4
PA - Panama 4
PE - Perù 4
UZ - Uzbekistan 4
AE - Emirati Arabi Uniti 3
AU - Australia 3
BD - Bangladesh 3
EC - Ecuador 3
EU - Europa 3
GR - Grecia 3
IR - Iran 3
LT - Lituania 3
MU - Mauritius 3
RO - Romania 3
CO - Colombia 2
CR - Costa Rica 2
EE - Estonia 2
HR - Croazia 2
HU - Ungheria 2
JO - Giordania 2
KG - Kirghizistan 2
MY - Malesia 2
PH - Filippine 2
SA - Arabia Saudita 2
AL - Albania 1
AM - Armenia 1
BN - Brunei Darussalam 1
IQ - Iraq 1
JM - Giamaica 1
KE - Kenya 1
KW - Kuwait 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
LI - Liechtenstein 1
MD - Moldavia 1
MN - Mongolia 1
MT - Malta 1
NO - Norvegia 1
NP - Nepal 1
OM - Oman 1
PS - Palestinian Territory 1
PT - Portogallo 1
PY - Paraguay 1
RS - Serbia 1
SC - Seychelles 1
SK - Slovacchia (Repubblica Slovacca) 1
SN - Senegal 1
TH - Thailandia 1
TN - Tunisia 1
VE - Venezuela 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 19.542
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Città #
Ann Arbor 2.188
Woodbridge 975
Chandler 797
Singapore 778
Frankfurt am Main 764
Fairfield 709
Ashburn 588
Dublin 537
Houston 515
Jacksonville 442
Milan 405
Santa Clara 392
Wilmington 371
Dearborn 321
Hong Kong 321
New York 309
Seattle 258
Cambridge 255
Vienna 243
Princeton 225
Dong Ket 193
Nanjing 163
Shanghai 114
Moscow 98
Beijing 75
Lachine 75
Altamura 69
Council Bluffs 65
Lawrence 63
Jakarta 62
Boardman 56
Southend 56
Nanchang 47
London 43
Helsinki 42
Toronto 39
Andover 37
San Diego 37
Shenyang 37
Brussels 35
Los Angeles 34
Jinan 30
Hebei 27
Norwalk 26
Brescia 23
Jiaxing 23
Düsseldorf 22
Romola 22
Guangzhou 20
Nürnberg 20
Rome 20
Lappeenranta 19
Mountain View 19
Bergamo 18
Edmonton 18
Falls Church 18
Nuremberg 18
Tianjin 18
Florence 17
Hangzhou 17
Pune 17
The Dalles 17
Kraków 16
Monza 16
Secaucus 16
Washington 15
Chicago 14
Dallas 14
Desio 14
Zhengzhou 14
Zurich 14
Changsha 13
Ottawa 13
Fremont 12
Hefei 12
Kunming 12
Lomazzo 12
São Paulo 12
Cinisello Balsamo 11
Kocaeli 11
Munich 11
Seregno 11
Arcore 10
Frankfurt An Der Oder 10
Ningbo 10
Oakland 10
Turin 10
Islamabad 9
Lanzhou 9
Orsay 9
Taizhou 9
Amsterdam 8
Ardea 8
Auburn Hills 8
Cesano Maderno 8
Dresden 8
Huizen 8
Portsmouth 8
Adana 7
Berlin 7
Totale 13.681
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Nome #
Broadband control of the optical properties of semiconductors through site-controlled self-assembly of microcrystals 361
Spin-coherent dynamics and carrier lifetime in strained Ge1-xSnx semiconductors on silicon 350
Electron Spin Resonance of conduction electrons in Ge/SiGe quantum wells 322
Continuous-Wave Magneto-Optical Determination of the Carrier Lifetime in Coherent Ge1−xSnx/Ge Heterostructures 294
Ambient atmosphere laser-induced local ripening of MoS2 nanoparticles 292
Optical properties of micron-sized crystals grown via 3D heteroepitaxy 269
Towards a uniform and large-scale deposition of MoS2 nanosheets via sulfurization of ultra-thin Mo-based solid films 240
Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001) 234
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 232
Optical spin injection and spin lifetime in Ge heterostructures 227
Optically reconfigurable polarized emission in Germanium 226
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 221
Modelling of the phonon strain shift coefficients in Si 1-x Ge x alloys 219
Optical spin injection and spin lifetime in Ge heterostructures 219
Optical Orientation of Spins in Ge/SiGe Multiple Quantum Wells grown (111) Si Substrate 217
Raman spectroscopy for the analysis of temperature-dependent plastic relaxation of SiGe layers 213
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 211
Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations 209
Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001) 208
Carrier and Spin Coherent Dynamics in Strained Germanium-Tin Semiconductor on Silicon 208
Photonic Properties of Self-Assembled Semiconductor Microstructures 204
Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells 204
Tailoring the spin polarization in Ge/SiGe multiple quantum wells 202
Optical tailoring of carrier spin polarization in Ge/SiGe multiple quantum wells 202
Carrier and Spin Coherent Dynamics in Strained Germanium-Tin Semiconductor on Silicon 202
Integration of MOSFETs with SiGe dots as stressor material 199
Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures 199
Strain Engineering in Highly Mismatched SiGe/Si Heterostructures 199
Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures 198
3D heteroepitaxy of mismatched semiconductors on silicon 194
Electrically Detected Conduction Electron Spin Resonance in Bulk Germanium and Germanium Quantum Wells 193
Long-lived conduction electron spins in Ge quantum wells 193
Holes in germanium quantum wells: spin relaxation and temperature dynamics 192
Emission engineering in germanium nanoresonators 191
Assessing the composition of hetero-epitaxial islands via morphological analysis: an analytical model matching GeSi/Si(001) data 190
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 188
Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates 186
Raman Spectroscopy of Si1-xGex Epilayers 185
Tear-Based Vibrational Spectroscopy Applied to Amyotrophic Lateral Sclerosis 183
Phonon strain shift coefficients in SixGe1-x alloys 182
Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires 182
Ge/SiGe quantum wells on Si(111): Growth, structural, and optical properties 179
Optical spin injection in SiGe heterostructures 178
SiGe nano-stressors for Ge strain-engineering 178
Optical Spin Orientation in Ge-Based Heterostructures 178
Impact of misfit dislocation on wavefront distortion in Si/SiGe/Si optical waveguides 177
The Role of Deposition Temperature and Substrate for Scalable and Uniform Deposition of MoS2 Grown by Vapour-Solid Chemical Reaction 177
Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells 177
An exceptional thermal strain reduction in Ge suspended layer grown on Si by a tilting pillar architecture 174
Collective Shape Oscillations of SiGe Islands on Pit-Patterned Si(001) Substrates: A Coherent-Growth Strategy Enabled by Self-Regulated Intermixing 173
Single-Tear Proteomics: A Feasible Approach to Precision Medicine 172
Optical orientation of electron spins and valence-band spectroscopy in germanium 171
Strong confinement-induced engineering of the g-factor and lifetime of conduction electron spins in Ge quantum wells 171
Holes in Germanium Quantum Wells: Spin Relaxation and Temperature Dynamics 170
Temperature-Dependent Photoluminescence Characteristics of GeSn Epitaxial Layers 170
Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy 169
Valley-dependent spin polarization and long-lived electron spins in germanium 169
All-Optical Switching of Photon Helicity at Direct-gap Transition in Germanium 169
Electron Spin Resonance of conduction electrons in Ge/SiGe quantum wells 169
Insights into the C distribution in Si:C/Si:C:P and the annealing behavior of Si:C layers 168
Thermal transport through short-period SiGe nanodot superlattices 166
Substrate strain manipulation by nanostructure perimeter forces 163
Progress towards spin-based light emission in group iv semiconductors 162
Structural investigations of the α12 Si-Ge superstructure 161
Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence 159
Local Uniaxial Tensile Deformation of Germanium up to the 4% Threshold by Epitaxial Nanostructures. 159
Three dimensional heteroepitaxy: A new path for monolithically integrating mismatched materials with silicon 157
In-vitro Affinity for Nicotine of Contact Lenses of Different Materials 157
Spin-dependent direct gap emission in tensile-strained Ge-on-Si heterostructures 156
Spin-dependent direct gap emission in tensile-strained Ge-on-Si heterostructures 155
Ge Crystals on Si Show Their Light 154
Optical spin orientation in SiGe heterostructures 154
Spin Generation and Relaxation in Ge/SiGe Quantum Wells 151
Addressing spin-optoelectronic properties of Ge by polarization and time-resolved PL investigations 149
Spin-orbit phenomena in group IV heterostructures 148
Dislocation recombination and surface passivation of Ge micro-crystals on Si 147
Electric field control of photoluminescence polarization in Ge/SiGe quantum wells 147
Conductive n-type gallium nitride thin films prepared by sputter deposition 145
Spin-resolved study of direct band-gap recombination in bulk Ge 143
Identifying spins states on self assembled Si/SiGe quantum dots by means of ESR 142
Spin resonance of electrons confined by SiGe nanostructures 142
Erratum to 'Raman spectroscopy of Si1−xGex epilayers' [Mater. Sci. Eng. B 124–125 (2005) 127–131] 141
Photoluminescence circular dichroism and spin polarization in Germanium 138
3D heteroepitaxy on patterned Si substrates: a new monolithic integration strategy 137
Optical Orientation of Spins in Bulk Ge studied by Direct-Gap Photoluminescence 137
Robust optical orientation of spins in Ge/SiGe quantum wells 136
Three-dimensional Ge/SiGe multiple quantum wells deposited on Si(001) and Si(111) patterned substrates 136
Strain engineering of silicon-germaium (SiGe) micro- and nanostructures 135
Raman spectroscopy determination of composition and strain in Si1-xGex/Si heterostructures 134
Elastic and Plastic Stress Relaxation in Highly Mismatched SiGe/Si Crystals 134
Local uniaxial tensile deformation of germanium up to the 4% threshold by epitaxial nanostructures 133
Optical Manipulation of the Rashba Effect in Germanium Quantum Wells 130
Enhancing radiative recombination in heteroepitaxial systems: three dimensional Ge-crystals 128
Strain-induced shift of phonon modes in Si1-xGex alloys 124
Ge/SiGe multiple quantum wells on high index Si substrates 122
Radiative recombination and optical spin orientation in GeSn epitaxial layers 122
Inserting Hydrogen into Germanium Quantum Dots 122
Radiative recombination in GeSn epitaxial architectures 120
Magneto-optical investigation of the dynamics of spin-polarized carriers in GeSn heterostructures 119
Magneto-optical investigation of spin and carrier kinetics in Ge1-xSnx/Ge heterostructures 115
Totale 18.009
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Categoria #
all - tutte 69.780
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 69.780
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020212 0 0 0 0 0 0 0 0 0 0 164 48
2020/20212.311 99 87 204 256 174 189 182 165 178 217 147 413
2021/20221.645 137 156 160 109 124 123 79 92 120 139 131 275
2022/20233.090 285 822 347 397 189 424 19 187 225 26 77 92
2023/20241.983 82 69 84 74 257 559 319 67 156 35 33 248
2024/20254.255 211 524 425 268 394 338 232 243 492 950 178 0
Totale 20.375