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PEZZOLI, FABIO
 Distribuzione geografica
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Continente #
NA - Nord America 10.255
EU - Europa 6.075
AS - Asia 2.852
SA - Sud America 143
AF - Africa 29
OC - Oceania 7
Continente sconosciuto - Info sul continente non disponibili 4
Totale 19.365
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Nazione #
US - Stati Uniti d'America 10.093
DE - Germania 1.259
IT - Italia 1.227
SG - Singapore 1.085
RU - Federazione Russa 894
CN - Cina 755
SE - Svezia 625
IE - Irlanda 562
GB - Regno Unito 368
UA - Ucraina 348
HK - Hong Kong 318
VN - Vietnam 301
AT - Austria 253
CA - Canada 150
FI - Finlandia 142
BR - Brasile 121
FR - Francia 120
IN - India 118
DK - Danimarca 81
ID - Indonesia 65
TR - Turchia 52
NL - Olanda 47
JP - Giappone 43
PK - Pakistan 41
BE - Belgio 38
CH - Svizzera 26
PL - Polonia 21
ES - Italia 20
KR - Corea 20
ZA - Sudafrica 13
CZ - Repubblica Ceca 10
TW - Taiwan 9
AR - Argentina 7
IL - Israele 7
BG - Bulgaria 6
CI - Costa d'Avorio 5
LV - Lettonia 5
MX - Messico 5
AZ - Azerbaigian 4
CL - Cile 4
EG - Egitto 4
NZ - Nuova Zelanda 4
PA - Panama 4
PE - Perù 4
UZ - Uzbekistan 4
AE - Emirati Arabi Uniti 3
AU - Australia 3
BD - Bangladesh 3
EC - Ecuador 3
EU - Europa 3
GR - Grecia 3
IR - Iran 3
LT - Lituania 3
MU - Mauritius 3
RO - Romania 3
CO - Colombia 2
CR - Costa Rica 2
EE - Estonia 2
HR - Croazia 2
HU - Ungheria 2
JO - Giordania 2
KG - Kirghizistan 2
MY - Malesia 2
PH - Filippine 2
SA - Arabia Saudita 2
AL - Albania 1
AM - Armenia 1
BN - Brunei Darussalam 1
IQ - Iraq 1
JM - Giamaica 1
KE - Kenya 1
KW - Kuwait 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
LI - Liechtenstein 1
MD - Moldavia 1
MN - Mongolia 1
MT - Malta 1
NO - Norvegia 1
NP - Nepal 1
OM - Oman 1
PS - Palestinian Territory 1
PT - Portogallo 1
PY - Paraguay 1
RS - Serbia 1
SC - Seychelles 1
SK - Slovacchia (Repubblica Slovacca) 1
SN - Senegal 1
TH - Thailandia 1
TN - Tunisia 1
VE - Venezuela 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 19.365
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Città #
Ann Arbor 2.188
Woodbridge 975
Chandler 797
Singapore 773
Frankfurt am Main 764
Fairfield 709
Ashburn 587
Dublin 537
Houston 515
Jacksonville 442
Milan 405
Santa Clara 392
Wilmington 371
Dearborn 321
Hong Kong 314
New York 309
Seattle 258
Cambridge 255
Vienna 243
Princeton 225
Dong Ket 193
Nanjing 163
Shanghai 114
Lachine 75
Beijing 71
Altamura 69
Council Bluffs 65
Lawrence 63
Jakarta 62
Boardman 56
Southend 56
Nanchang 47
London 43
Helsinki 42
Moscow 39
Toronto 39
Andover 37
San Diego 37
Shenyang 37
Brussels 35
Los Angeles 34
Jinan 30
Hebei 27
Norwalk 26
Brescia 23
Jiaxing 23
Düsseldorf 22
Romola 22
Guangzhou 20
Nürnberg 20
Rome 20
Lappeenranta 19
Mountain View 19
Bergamo 18
Edmonton 18
Falls Church 18
Nuremberg 18
Tianjin 18
Florence 17
Hangzhou 17
Pune 17
Kraków 16
Monza 16
Secaucus 16
Washington 15
Dallas 14
Zhengzhou 14
Zurich 14
Changsha 13
Chicago 13
Ottawa 13
Fremont 12
Hefei 12
Kunming 12
Lomazzo 12
São Paulo 12
Desio 11
Kocaeli 11
Seregno 11
The Dalles 11
Arcore 10
Cinisello Balsamo 10
Frankfurt An Der Oder 10
Munich 10
Ningbo 10
Oakland 10
Turin 10
Islamabad 9
Lanzhou 9
Orsay 9
Taizhou 9
Amsterdam 8
Ardea 8
Auburn Hills 8
Cesano Maderno 8
Dresden 8
Huizen 8
Portsmouth 8
Adana 7
Berlin 7
Totale 13.593
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Nome #
Broadband control of the optical properties of semiconductors through site-controlled self-assembly of microcrystals 360
Spin-coherent dynamics and carrier lifetime in strained Ge1-xSnx semiconductors on silicon 348
Electron Spin Resonance of conduction electrons in Ge/SiGe quantum wells 321
Continuous-Wave Magneto-Optical Determination of the Carrier Lifetime in Coherent Ge1−xSnx/Ge Heterostructures 292
Ambient atmosphere laser-induced local ripening of MoS2 nanoparticles 289
Optical properties of micron-sized crystals grown via 3D heteroepitaxy 268
Towards a uniform and large-scale deposition of MoS2 nanosheets via sulfurization of ultra-thin Mo-based solid films 240
Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001) 233
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 231
Optical spin injection and spin lifetime in Ge heterostructures 226
Optically reconfigurable polarized emission in Germanium 224
Modelling of the phonon strain shift coefficients in Si 1-x Ge x alloys 219
Optical spin injection and spin lifetime in Ge heterostructures 219
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 219
Optical Orientation of Spins in Ge/SiGe Multiple Quantum Wells grown (111) Si Substrate 217
Raman spectroscopy for the analysis of temperature-dependent plastic relaxation of SiGe layers 213
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 210
Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations 209
Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001) 207
Carrier and Spin Coherent Dynamics in Strained Germanium-Tin Semiconductor on Silicon 206
Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells 203
Tailoring the spin polarization in Ge/SiGe multiple quantum wells 201
Optical tailoring of carrier spin polarization in Ge/SiGe multiple quantum wells 201
Photonic Properties of Self-Assembled Semiconductor Microstructures 200
Carrier and Spin Coherent Dynamics in Strained Germanium-Tin Semiconductor on Silicon 200
Strain Engineering in Highly Mismatched SiGe/Si Heterostructures 199
Integration of MOSFETs with SiGe dots as stressor material 198
Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures 198
Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures 197
3D heteroepitaxy of mismatched semiconductors on silicon 194
Long-lived conduction electron spins in Ge quantum wells 192
Holes in germanium quantum wells: spin relaxation and temperature dynamics 191
Electrically Detected Conduction Electron Spin Resonance in Bulk Germanium and Germanium Quantum Wells 191
Emission engineering in germanium nanoresonators 191
Assessing the composition of hetero-epitaxial islands via morphological analysis: an analytical model matching GeSi/Si(001) data 188
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 187
Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates 185
Raman Spectroscopy of Si1-xGex Epilayers 184
Phonon strain shift coefficients in SixGe1-x alloys 181
Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires 180
Tear-Based Vibrational Spectroscopy Applied to Amyotrophic Lateral Sclerosis 180
Ge/SiGe quantum wells on Si(111): Growth, structural, and optical properties 179
Optical spin injection in SiGe heterostructures 178
Impact of misfit dislocation on wavefront distortion in Si/SiGe/Si optical waveguides 176
SiGe nano-stressors for Ge strain-engineering 176
Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells 176
Optical Spin Orientation in Ge-Based Heterostructures 176
The Role of Deposition Temperature and Substrate for Scalable and Uniform Deposition of MoS2 Grown by Vapour-Solid Chemical Reaction 175
An exceptional thermal strain reduction in Ge suspended layer grown on Si by a tilting pillar architecture 173
Collective Shape Oscillations of SiGe Islands on Pit-Patterned Si(001) Substrates: A Coherent-Growth Strategy Enabled by Self-Regulated Intermixing 172
Optical orientation of electron spins and valence-band spectroscopy in germanium 170
Single-Tear Proteomics: A Feasible Approach to Precision Medicine 170
Holes in Germanium Quantum Wells: Spin Relaxation and Temperature Dynamics 169
Strong confinement-induced engineering of the g-factor and lifetime of conduction electron spins in Ge quantum wells 169
Temperature-Dependent Photoluminescence Characteristics of GeSn Epitaxial Layers 169
Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy 168
All-Optical Switching of Photon Helicity at Direct-gap Transition in Germanium 168
Electron Spin Resonance of conduction electrons in Ge/SiGe quantum wells 168
Valley-dependent spin polarization and long-lived electron spins in germanium 167
Insights into the C distribution in Si:C/Si:C:P and the annealing behavior of Si:C layers 167
Thermal transport through short-period SiGe nanodot superlattices 166
Substrate strain manipulation by nanostructure perimeter forces 163
Progress towards spin-based light emission in group iv semiconductors 161
Structural investigations of the α12 Si-Ge superstructure 160
Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence 158
Local Uniaxial Tensile Deformation of Germanium up to the 4% Threshold by Epitaxial Nanostructures. 158
Three dimensional heteroepitaxy: A new path for monolithically integrating mismatched materials with silicon 156
Spin-dependent direct gap emission in tensile-strained Ge-on-Si heterostructures 155
In-vitro Affinity for Nicotine of Contact Lenses of Different Materials 155
Ge Crystals on Si Show Their Light 154
Spin-dependent direct gap emission in tensile-strained Ge-on-Si heterostructures 154
Optical spin orientation in SiGe heterostructures 153
Spin Generation and Relaxation in Ge/SiGe Quantum Wells 149
Addressing spin-optoelectronic properties of Ge by polarization and time-resolved PL investigations 148
Spin-orbit phenomena in group IV heterostructures 147
Dislocation recombination and surface passivation of Ge micro-crystals on Si 146
Electric field control of photoluminescence polarization in Ge/SiGe quantum wells 146
Spin-resolved study of direct band-gap recombination in bulk Ge 142
Spin resonance of electrons confined by SiGe nanostructures 141
Erratum to 'Raman spectroscopy of Si1−xGex epilayers' [Mater. Sci. Eng. B 124–125 (2005) 127–131] 140
Photoluminescence circular dichroism and spin polarization in Germanium 137
Optical Orientation of Spins in Bulk Ge studied by Direct-Gap Photoluminescence 137
Identifying spins states on self assembled Si/SiGe quantum dots by means of ESR 137
Conductive n-type gallium nitride thin films prepared by sputter deposition 137
3D heteroepitaxy on patterned Si substrates: a new monolithic integration strategy 136
Three-dimensional Ge/SiGe multiple quantum wells deposited on Si(001) and Si(111) patterned substrates 136
Robust optical orientation of spins in Ge/SiGe quantum wells 135
Strain engineering of silicon-germaium (SiGe) micro- and nanostructures 134
Raman spectroscopy determination of composition and strain in Si1-xGex/Si heterostructures 133
Elastic and Plastic Stress Relaxation in Highly Mismatched SiGe/Si Crystals 133
Local uniaxial tensile deformation of germanium up to the 4% threshold by epitaxial nanostructures 132
Optical Manipulation of the Rashba Effect in Germanium Quantum Wells 128
Enhancing radiative recombination in heteroepitaxial systems: three dimensional Ge-crystals 127
Strain-induced shift of phonon modes in Si1-xGex alloys 123
Radiative recombination and optical spin orientation in GeSn epitaxial layers 121
Ge/SiGe multiple quantum wells on high index Si substrates 120
Radiative recombination in GeSn epitaxial architectures 119
Inserting Hydrogen into Germanium Quantum Dots 119
Magneto-optical investigation of the dynamics of spin-polarized carriers in GeSn heterostructures 118
Optical orientation and electron spin dynamics in Germanium 113
Totale 17.885
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Categoria #
all - tutte 68.623
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 68.623
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020212 0 0 0 0 0 0 0 0 0 0 164 48
2020/20212.311 99 87 204 256 174 189 182 165 178 217 147 413
2021/20221.645 137 156 160 109 124 123 79 92 120 139 131 275
2022/20233.090 285 822 347 397 189 424 19 187 225 26 77 92
2023/20241.983 82 69 84 74 257 559 319 67 156 35 33 248
2024/20254.078 211 524 425 268 394 338 232 243 492 950 1 0
Totale 20.198