We demonstrate an effective epitaxial route for the manipulation and further enrichment of the intriguing spin-dependent phenomena boasted by germanium. We show optical initialization and readout of spins in Ge-rich germanium-tin alloys and report on spin quantum beats between Zeeman-split levels under an external magnetic field. While heavy Sn atoms can be readily utilized to strengthen the spin-orbit coupling, our experiments reveal robust spin orientation in a wide temperature range and a persistent spin lifetime that noticeably approaches the nanosecond regime at room temperature. In addition, time decay photoluminescence experiments evidence a temperature-induced monotonic decrease of the carrier lifetime, eventually providing crucial insights also into nonradiative recombination mechanisms.

De Cesari, S., Balocchi, A., Vitiello, E., Jahandar, P., Grilli, E., Amand, T., et al. (2019). Spin-coherent dynamics and carrier lifetime in strained Ge1-xSnx semiconductors on silicon. PHYSICAL REVIEW. B, 99(3) [10.1103/PhysRevB.99.035202].

Spin-coherent dynamics and carrier lifetime in strained Ge1-xSnx semiconductors on silicon

De Cesari, S
Primo
;
Vitiello, E;Pezzoli, F
Ultimo
2019

Abstract

We demonstrate an effective epitaxial route for the manipulation and further enrichment of the intriguing spin-dependent phenomena boasted by germanium. We show optical initialization and readout of spins in Ge-rich germanium-tin alloys and report on spin quantum beats between Zeeman-split levels under an external magnetic field. While heavy Sn atoms can be readily utilized to strengthen the spin-orbit coupling, our experiments reveal robust spin orientation in a wide temperature range and a persistent spin lifetime that noticeably approaches the nanosecond regime at room temperature. In addition, time decay photoluminescence experiments evidence a temperature-induced monotonic decrease of the carrier lifetime, eventually providing crucial insights also into nonradiative recombination mechanisms.
Articolo in rivista - Articolo scientifico
Electronic, Optical and Magnetic Materials; Condensed Matter Physics
English
2019
99
3
035202
partially_open
De Cesari, S., Balocchi, A., Vitiello, E., Jahandar, P., Grilli, E., Amand, T., et al. (2019). Spin-coherent dynamics and carrier lifetime in strained Ge1-xSnx semiconductors on silicon. PHYSICAL REVIEW. B, 99(3) [10.1103/PhysRevB.99.035202].
File in questo prodotto:
File Dimensione Formato  
1710.05792.pdf

accesso aperto

Tipologia di allegato: Submitted Version (Pre-print)
Dimensione 831.6 kB
Formato Adobe PDF
831.6 kB Adobe PDF Visualizza/Apri
decesari.PhysRevB.19.pdf

Solo gestori archivio

Tipologia di allegato: Publisher’s Version (Version of Record, VoR)
Dimensione 993.11 kB
Formato Adobe PDF
993.11 kB Adobe PDF   Visualizza/Apri   Richiedi una copia

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/220461
Citazioni
  • Scopus 23
  • ???jsp.display-item.citation.isi??? 20
Social impact