The shape of coherent SiGe islands epitaxially grown on pit-patterned Si(001) substrates displays very uniform collective oscillations with increasing Ge deposition, transforming cyclically between shallower "dome'' and steeper "barn'' morphologies. Correspondingly, the average Ge content in the alloyed islands also displays an oscillatory behavior, superimposed on a progressive Si enrichment with increasing size. We show that such a growth mode, remarkably different from the flat-substrate case, allows the islands to keep growing in size while avoiding plastic relaxation
Zhang, J., Montalenti, F., Rastelli, A., Hrauda, N., Scopece, D., Groiss, H., et al. (2010). Collective Shape Oscillations of SiGe Islands on Pit-Patterned Si(001) Substrates: A Coherent-Growth Strategy Enabled by Self-Regulated Intermixing. PHYSICAL REVIEW LETTERS, 105(16) [10.1103/PhysRevLett.105.166102].
Collective Shape Oscillations of SiGe Islands on Pit-Patterned Si(001) Substrates: A Coherent-Growth Strategy Enabled by Self-Regulated Intermixing
MONTALENTI, FRANCESCO CIMBRO MATTIA;SCOPECE, DANIELE;PEZZOLI, FABIO;MIGLIO, LEONIDA;
2010
Abstract
The shape of coherent SiGe islands epitaxially grown on pit-patterned Si(001) substrates displays very uniform collective oscillations with increasing Ge deposition, transforming cyclically between shallower "dome'' and steeper "barn'' morphologies. Correspondingly, the average Ge content in the alloyed islands also displays an oscillatory behavior, superimposed on a progressive Si enrichment with increasing size. We show that such a growth mode, remarkably different from the flat-substrate case, allows the islands to keep growing in size while avoiding plastic relaxation
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