Spin manipulation is a crucial aspect for fundamental investigations and the future application of spin-based optoelectronics [1]. Within this field, group IV semiconductors have shown appealing properties such as long spin lifetime, isotopic purification and compatibility with Si manufacturing processing. For practical purposes, electrically-induced spin manipulation through the Rashba effect would be highly desirable [2]. However, such a possibility has received little attention in heterostructures made of group-IV materials. In this work we present a polarization-resolved photoluminescence study in a cylindrical p-i-n diode where the intrinsic region of the device consists of Ge QWs in Si0.15Ge0.85 barriers. Different excitation power densities are investigated in a bias range from -5 to +4V. At 4K we observed a non-monotonic behaviour of the degree of circular polarization when varying the optical pump density and a non-trivial response with the bias, suggesting the presence of competing dynamical effects. Our work presents a starting point for a deeper understanding of spin-dependent properties in group IV heterostructures and their fine control by electrical means. [1] De Cesari et al, Electronics, 6, 19 (2017) [2] A. Manchon et al., Nat. Mater. 14, 871 (2005)

Rossi, S., Talamas Simola, E., Isella, G., Pezzoli, F. (2021). Electric field control of photoluminescence polarization in Ge/SiGe quantum wells. Intervento presentato a: APS March meeting 2021, Washington, DC (online).

Electric field control of photoluminescence polarization in Ge/SiGe quantum wells

Rossi, S.
;
Pezzoli F.
Ultimo
2021

Abstract

Spin manipulation is a crucial aspect for fundamental investigations and the future application of spin-based optoelectronics [1]. Within this field, group IV semiconductors have shown appealing properties such as long spin lifetime, isotopic purification and compatibility with Si manufacturing processing. For practical purposes, electrically-induced spin manipulation through the Rashba effect would be highly desirable [2]. However, such a possibility has received little attention in heterostructures made of group-IV materials. In this work we present a polarization-resolved photoluminescence study in a cylindrical p-i-n diode where the intrinsic region of the device consists of Ge QWs in Si0.15Ge0.85 barriers. Different excitation power densities are investigated in a bias range from -5 to +4V. At 4K we observed a non-monotonic behaviour of the degree of circular polarization when varying the optical pump density and a non-trivial response with the bias, suggesting the presence of competing dynamical effects. Our work presents a starting point for a deeper understanding of spin-dependent properties in group IV heterostructures and their fine control by electrical means. [1] De Cesari et al, Electronics, 6, 19 (2017) [2] A. Manchon et al., Nat. Mater. 14, 871 (2005)
relazione (orale)
Ge quantum wells, heterostructures, Rashba field, spin dynamics
English
APS March meeting 2021
2021
2021
none
Rossi, S., Talamas Simola, E., Isella, G., Pezzoli, F. (2021). Electric field control of photoluminescence polarization in Ge/SiGe quantum wells. Intervento presentato a: APS March meeting 2021, Washington, DC (online).
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/319016
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