Bicocca Open Archive

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MONTALENTI, FRANCESCO CIMBRO MATTIA
 Distribuzione geografica
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Continente #
NA - Nord America 25.091
AS - Asia 13.969
EU - Europa 11.762
SA - Sud America 1.731
AF - Africa 314
Continente sconosciuto - Info sul continente non disponibili 30
OC - Oceania 21
Totale 52.918
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Nazione #
US - Stati Uniti d'America 23.558
SG - Singapore 5.129
CN - Cina 2.962
IT - Italia 2.934
VN - Vietnam 1.884
HK - Hong Kong 1.804
DE - Germania 1.769
RU - Federazione Russa 1.592
CA - Canada 1.364
BR - Brasile 1.296
SE - Svezia 1.292
IE - Irlanda 878
UA - Ucraina 833
GB - Regno Unito 656
FR - Francia 511
IN - India 440
BD - Bangladesh 303
FI - Finlandia 289
KR - Corea 262
ES - Italia 233
TR - Turchia 199
AT - Austria 179
AR - Argentina 157
ID - Indonesia 150
IQ - Iraq 127
NL - Olanda 124
PK - Pakistan 117
JP - Giappone 116
CH - Svizzera 113
ZA - Sudafrica 92
MX - Messico 84
SA - Arabia Saudita 77
CO - Colombia 72
DK - Danimarca 72
BE - Belgio 64
EC - Ecuador 62
PL - Polonia 59
PH - Filippine 57
UZ - Uzbekistan 44
VE - Venezuela 41
CL - Cile 37
MA - Marocco 36
TW - Taiwan 32
KE - Kenya 27
NP - Nepal 27
PY - Paraguay 27
TN - Tunisia 26
IL - Israele 25
AE - Emirati Arabi Uniti 24
EU - Europa 23
MY - Malesia 23
ET - Etiopia 22
JO - Giordania 22
LT - Lituania 19
TH - Thailandia 19
AU - Australia 18
EG - Egitto 18
AZ - Azerbaigian 17
DZ - Algeria 17
JM - Giamaica 17
AL - Albania 16
HU - Ungheria 15
PE - Perù 15
HN - Honduras 14
OM - Oman 14
RO - Romania 13
CI - Costa d'Avorio 12
CZ - Repubblica Ceca 12
DO - Repubblica Dominicana 12
IR - Iran 12
PT - Portogallo 12
SN - Senegal 12
UY - Uruguay 12
CR - Costa Rica 11
KG - Kirghizistan 11
LB - Libano 10
BO - Bolivia 9
GE - Georgia 9
GR - Grecia 9
RS - Serbia 9
SC - Seychelles 9
BG - Bulgaria 8
BY - Bielorussia 8
KZ - Kazakistan 8
NI - Nicaragua 8
NO - Norvegia 8
BH - Bahrain 7
MD - Moldavia 7
PS - Palestinian Territory 7
AO - Angola 6
ME - Montenegro 6
MU - Mauritius 6
PA - Panama 6
SY - Repubblica araba siriana 6
TT - Trinidad e Tobago 6
EE - Estonia 5
ZW - Zimbabwe 5
GA - Gabon 4
KW - Kuwait 4
LK - Sri Lanka 4
Totale 52.838
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Città #
Ann Arbor 4.395
Singapore 2.858
Ashburn 1.765
Hong Kong 1.745
Woodbridge 1.562
San Jose 1.462
Fairfield 1.242
Frankfurt am Main 1.241
Chandler 1.191
Houston 1.173
Milan 1.118
Toronto 1.052
Jacksonville 863
Dublin 829
Wilmington 679
Santa Clara 627
Dearborn 554
New York 502
Seattle 483
Beijing 476
Dallas 465
Ho Chi Minh City 451
Princeton 416
Cambridge 382
Hanoi 370
Chicago 361
Los Angeles 351
The Dalles 349
Hefei 332
Dong Ket 254
Council Bluffs 243
Nanjing 224
Seoul 218
Lauterbourg 209
Shanghai 191
Altamura 169
Rome 159
Buffalo 155
Lawrence 147
Vienna 140
Moscow 137
Lachine 136
São Paulo 133
Jakarta 97
San Diego 93
Helsinki 87
Boardman 86
Nanchang 86
Turin 74
Shenyang 72
Guangzhou 69
London 66
Zurich 65
Valladolid 63
Dresden 60
Andover 58
Changsha 57
Tianjin 57
Haiphong 56
Tokyo 56
Da Nang 55
Hebei 55
Phoenix 55
Orem 52
Atlanta 49
Montreal 48
Baghdad 46
Brooklyn 45
Ottawa 45
Brussels 44
Chennai 44
Jinan 44
Munich 44
Washington 44
Rio de Janeiro 43
Southend 43
Columbus 42
Naples 42
Philadelphia 42
Pune 42
Dhaka 39
Sacramento 39
Basingstoke 38
Jiaxing 38
Warsaw 38
Falls Church 37
Norwalk 37
Lahore 36
Monza 34
Redondo Beach 34
Hangzhou 31
Nuremberg 31
San Francisco 31
Zhengzhou 31
Denver 30
Huizen 30
Johannesburg 30
Kent 30
Riyadh 30
Tashkent 30
Totale 34.609
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Nome #
Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling 463
Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study 454
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 446
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 430
Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates 426
Stability of Ge on Si (1 1 10) surfaces and the role of dimer tilting 415
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A 404
Computational analysis of low-energy dislocation configurations in graded layers 377
Sunburst pattern by kinetic segregation in core-shell nanowires: A phase-field study 369
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 362
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 361
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 356
Multiple stacking fault formation via the evolution of related dislocations by molecular dynamics simulations 354
Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001) 351
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 348
Nature and Shape of Stacking Faults in 3C-SiC by Molecular Dynamics Simulations 346
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 340
Reduction of threading dislocation density beyond the saturation limit by optimized reverse grading 336
Growth and coalescence of 3c-sic on si(111) micro-pillars by a phase-field approach 330
Straining Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis 328
Dislocation-free SiGe/Si heterostructures 328
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment 327
InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires 325
Slip trace-induced terrace erosion 319
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars 314
Dynamics of crosshatch patterns in heteroepitaxy 313
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film 308
Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations 304
Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures 301
Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures 296
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 294
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 286
Modeling the dynamics of cross-hatch evolution in heteroepitaxy 285
Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source 284
Hydrostatic strain enhancement in laterally confined SiGe nanostripes 283
Stability of shuffle and glide dislocation segments with increasing misfit in Ge/Si1-xGex(001) epitaxial layers 282
Vacancy-mediated climbing motion of dislocations in Ge/Si films: atomic-scale insights via molecular dynamics 281
Faceting of equilibrium and metastable nanostructures: A phase-field model of surface diffusion tackling realistic shapes 281
Strain Engineering in Highly Mismatched SiGe/Si Heterostructures 279
SiGe nano-stressors for Ge strain-engineering 278
Unraveling the atomic-scale pathways driving pressure-induced phase transitions in silicon 277
Self-ordering of a Ge island single layer induced by Si overgrowth 275
Simulations of strained films evolution: extending accessible timescales through Convolutional Neural Networks 273
Dislocation engineering in SiGe heteroepitaxial films on patterned Si (001) substrates 272
Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy 272
Accurate and analytical strain mapping at the surface of Ge/Si(001) islands by an improved flat-island approximation 270
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation 270
Spontaneous Ge island ordering promoted by partial silicon capping 269
Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires 269
Accelerating simulations of strained-film growth by deep learning: Finite element method accuracy over long time scales 268
Vertical and lateral ordering of Ge islands grown on Si(001): Theory and experiments 268
Controlling the relaxation mechanism of low strain Si1- x Gex /Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source 268
Assessing the composition of hetero-epitaxial islands via morphological analysis: an analytical model matching GeSi/Si(001) data 267
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si 266
Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments 265
Phenomenological model of nanocrystalline silicon film formation by plasma-enhanced chemical vapor deposition 262
In-Plane Nanowire Growth of Topological Crystalline Insulator Pb₁₋ₓSnₓTe 262
How pit facet inclination drives heteroepitaxial island positioning on patterned substrates 261
Dynamics of pit filling in heteroepitaxy via phase-field simulations 260
Collective Shape Oscillations of SiGe Islands on Pit-Patterned Si(001) Substrates: A Coherent-Growth Strategy Enabled by Self-Regulated Intermixing 260
Thermal-hydrogen promoted selective desorption and enhanced mobility of adsorbed radicals in silicon film growth 258
3D heteroepitaxy on patterned Si substrates: a new monolithic integration strategy 257
Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates 257
Key role of the wetting layer in revealing the hidden path of Ge/Si(001) Stranski-Krastanow growth onset 256
Monolithic Growth of Ultrathin Ge Nanowires on Si(001) 255
Local Uniaxial Tensile Deformation of Germanium up to the 4% Threshold by Epitaxial Nanostructures. 254
Simulating morphological evolutions by Convolutional Neural Networks 251
Self-assembled GaAs islands on Si by droplet epitaxy 251
Strained MOSFETs on ordered SiGe dots 251
Si/Ge exchange mechanisms at the Ge(105) surface 250
Phase-field modeling of the morphological evolution of ringlike structures during growth: Thermodynamics, kinetics, and template effects 250
Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling 249
Formation of Ge Nanoripples on Vicinal Si (1110): From Stranski-Krastanow Seeds to a Perfectly Faceted Wetting Layer 248
Detailed Analysis of the Shape-dependent Deformation Field in 3D Ge Islands 248
Modelling the kinetic growth mode of GaAs nanomembranes 247
Quantitative analysis of the prediction performance of a Convolutional Neural Network evaluating the surface elastic energy of a strained film 247
Binding sites for SiH2/Si(001): A combined ab initio, tight-binding, and classical investigation 246
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 246
Continuum modeling of heteroepitaxial growth in semiconductors 244
Misfit dislocation gettering by substrate pit-patterning in SiGe films on Si(001) 243
Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data 242
Cell cycle effects of gemcitabine 240
Ab initio results for the adiabatic atom-surface interaction for helium and neon on a simple metal 240
Continuum Modeling of cyclic growth in Ge/Si(001) heteroepitaxy 240
Unexpected dominance of vertical dislocations in high-misfit ge/si(001) films and their elimination by deep substrate patterning 239
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 239
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 239
Anomalous Smoothing Preceding Island Formation During Growth on Patterned Substrates 238
Engineered coalescence of three-dimensional Ge microcrystals into high-quality suspended layers on Si pillars 237
Atomic-scale insights on the formation of ordered arrays of edge dislocations in Ge/Si(001) films via molecular dynamics simulations 237
Intermixing in heteroepitaxial islands: fast, self-consistent calculation of the concentration profile minimizing the elastic energy 235
Self-organized evolution of Ge/Si(001) into intersecting bundles of horizontal nanowires during annealing 235
Kinetic growth and surface faceting of vertical micro- and nano-structures: theory and experiments 235
Misfit-Dislocation Distributions in Heteroepitaxy: From Mesoscale Measurements to Individual Defects and Back 234
Phase‐Field modeling of semiconductor heteroepitaxy: elastic relaxation, surface energy minimization and intermixing 233
Simulations of strained films evolution: extending accessible timescales through Convolutional Neural Networks 232
Atomic-scale pathway of the pyramid-to-dome transition during Ge growth on Si(001) 232
Modeling the plastic relaxation onset in realistic SiGe islands on Si(001) 230
Temperature-dependent evolution of the wetting layer thickness during Ge deposition on Si(001) 229
Morphological evolution and compositional segregation effects in core-shell nanowires 229
Totale 28.641
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Categoria #
all - tutte 169.790
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 169.790
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20223.740 263 337 535 378 217 280 221 206 188 311 277 527
2022/20235.121 575 1.451 559 555 324 720 60 236 343 57 139 102
2023/20243.066 103 163 129 117 459 716 549 140 236 47 67 340
2024/20258.042 386 963 417 371 640 337 337 407 808 1.091 697 1.588
2025/202618.943 1.547 1.203 1.619 1.397 2.071 997 2.823 975 1.669 1.520 1.598 1.524
2026/2027152 152 0 0 0 0 0 0 0 0 0 0 0
Totale 54.064