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MONTALENTI, FRANCESCO CIMBRO MATTIA
 Distribuzione geografica
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Continente #
NA - Nord America 15.440
EU - Europa 6.642
AS - Asia 1.859
Continente sconosciuto - Info sul continente non disponibili 27
AF - Africa 17
SA - Sud America 8
OC - Oceania 7
Totale 24.000
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Nazione #
US - Stati Uniti d'America 15.186
DE - Germania 1.795
SE - Svezia 1.251
IT - Italia 1.245
CN - Cina 991
UA - Ucraina 741
GB - Regno Unito 438
VN - Vietnam 417
CA - Canada 252
IE - Irlanda 223
FI - Finlandia 190
HK - Hong Kong 178
AT - Austria 124
RU - Federazione Russa 118
BE - Belgio 115
FR - Francia 108
IN - India 94
ES - Italia 90
TR - Turchia 82
DK - Danimarca 67
NL - Olanda 66
JP - Giappone 31
EU - Europa 23
CH - Svizzera 22
KR - Corea 13
BD - Bangladesh 10
PK - Pakistan 10
RO - Romania 10
PL - Polonia 9
SG - Singapore 9
AU - Australia 7
BG - Bulgaria 7
CI - Costa d'Avorio 7
IR - Iran 6
BR - Brasile 5
CZ - Repubblica Ceca 5
IL - Israele 5
TW - Taiwan 5
GR - Grecia 4
HU - Ungheria 4
A2 - ???statistics.table.value.countryCode.A2??? 3
MU - Mauritius 3
NO - Norvegia 3
CL - Cile 2
EE - Estonia 2
PH - Filippine 2
SA - Arabia Saudita 2
SC - Seychelles 2
A1 - Anonimo 1
BZ - Belize 1
EC - Ecuador 1
EG - Egitto 1
GE - Georgia 1
GW - Guinea-Bissau 1
HR - Croazia 1
LA - Repubblica Popolare Democratica del Laos 1
LK - Sri Lanka 1
MD - Moldavia 1
ME - Montenegro 1
MX - Messico 1
NG - Nigeria 1
PT - Portogallo 1
RS - Serbia 1
TN - Tunisia 1
UZ - Uzbekistan 1
ZA - Sudafrica 1
Totale 24.000
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Città #
Ann Arbor 4.359
Woodbridge 1.516
Frankfurt am Main 1.488
Fairfield 1.212
Chandler 1.180
Houston 1.145
Jacksonville 838
Wilmington 664
Ashburn 552
Dearborn 546
Milan 525
Seattle 436
Princeton 408
Cambridge 373
Dong Ket 246
Nanjing 219
Dublin 214
Altamura 167
Hong Kong 162
New York 151
Lawrence 144
Lachine 133
Beijing 120
Vienna 114
Brussels 109
San Diego 86
Nanchang 85
Shenyang 64
Boardman 63
Philadelphia 60
Andover 56
Toronto 56
Hebei 54
Tianjin 44
Helsinki 43
Southend 43
Ottawa 42
Dresden 41
Changsha 40
Jinan 39
Shanghai 39
Falls Church 37
Jiaxing 37
Guangzhou 36
Norwalk 36
Sacramento 30
Huizen 29
London 29
Mountain View 27
Kunming 22
Redmond 21
Hangzhou 20
Zhengzhou 20
Ardea 18
Phoenix 18
Taizhou 18
Ningbo 17
Rome 17
Umeda 17
Auburn Hills 16
Fremont 16
Los Angeles 16
Turin 15
Torino 14
Grafing 13
Hefei 13
Chicago 12
Marburg 12
Kocaeli 11
Malmö 11
Sesto Fiorentino 11
Edmonton 10
Lanzhou 10
Munich 9
Villa Bartolomea 9
Amsterdam 8
Frankfurt An Der Oder 8
Karlsruhe 8
Xian 8
Abidjan 7
Campobasso 7
Novosibirsk 7
Oxford 7
San Mateo 7
Serra 7
University Park 7
Arcore 6
Bergamo 6
Brescia 6
Dalmine 6
Duncan 6
Eindhoven 6
Kiev 6
Montréal 6
Monza 6
Upper Marlboro 6
Washington 6
Cazzano 5
Chiswick 5
Chittagong 5
Totale 18.685
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Nome #
Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study 319
Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling 305
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 300
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A 284
Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates 283
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 259
Sunburst pattern by kinetic segregation in core-shell nanowires: A phase-field study 252
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 243
Computational analysis of low-energy dislocation configurations in graded layers 239
Slip trace-induced terrace erosion 230
Reduction of threading dislocation density beyond the saturation limit by optimized reverse grading 228
Growth and coalescence of 3c-sic on si(111) micro-pillars by a phase-field approach 214
Dynamics of crosshatch patterns in heteroepitaxy 212
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 209
Modeling the dynamics of cross-hatch evolution in heteroepitaxy 206
Dislocation-free SiGe/Si heterostructures 198
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 196
Straining Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis 194
Multiple stacking fault formation via the evolution of related dislocations by molecular dynamics simulations 193
Nature and Shape of Stacking Faults in 3C-SiC by Molecular Dynamics Simulations 193
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 192
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment 191
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film 186
Controlling the relaxation mechanism of low strain Si1- x Gex /Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source 176
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation 176
Stability of shuffle and glide dislocation segments with increasing misfit in Ge/Si1-xGex(001) epitaxial layers 173
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 172
Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations 171
Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures 169
Faceting of equilibrium and metastable nanostructures: A phase-field model of surface diffusion tackling realistic shapes 169
Ab initio results for the adiabatic atom-surface interaction for helium and neon on a simple metal 168
Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy 167
Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures 165
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 164
Dynamics of pit filling in heteroepitaxy via phase-field simulations 162
Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001) 161
Self-assembled GaAs islands on Si by droplet epitaxy 158
Vertical and lateral ordering of Ge islands grown on Si(001): Theory and experiments 158
Strain Engineering in Highly Mismatched SiGe/Si Heterostructures 157
Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source 156
InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires 155
Accurate and analytical strain mapping at the surface of Ge/Si(001) islands by an improved flat-island approximation 153
Spontaneous Ge island ordering promoted by partial silicon capping 151
Hydrostatic strain enhancement in laterally confined SiGe nanostripes 151
Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling 150
Anomalous Smoothing Preceding Island Formation During Growth on Patterned Substrates 149
The formation of a Sn monolayer on Ge(1 0 0) studied at the atomic scale 149
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars 148
Assessing the composition of hetero-epitaxial islands via morphological analysis: an analytical model matching GeSi/Si(001) data 145
SiGe nano-stressors for Ge strain-engineering 144
Binding sites for SiH2/Si(001): A combined ab initio, tight-binding, and classical investigation 143
Temperature-dependent evolution of the wetting layer thickness during Ge deposition on Si(001) 143
Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data 140
Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments 140
Dislocation engineering in SiGe heteroepitaxial films on patterned Si (001) substrates 139
Misfit-Dislocation Distributions in Heteroepitaxy: From Mesoscale Measurements to Individual Defects and Back 139
Phenomenological model of nanocrystalline silicon film formation by plasma-enhanced chemical vapor deposition 138
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si 138
Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires 138
Morphological evolution and compositional segregation effects in core-shell nanowires 138
Monolithic Growth of Ultrathin Ge Nanowires on Si(001) 137
Thermal-hydrogen promoted selective desorption and enhanced mobility of adsorbed radicals in silicon film growth 136
Relaxed SiGe heteroepitaxy on Si with very thin buffer layers: experimental LEPECVD indications and an interpretation based on strain- dependent dislocation nature 135
Cell cycle effects of gemcitabine 135
Formation of Ge Nanoripples on Vicinal Si (1110): From Stranski-Krastanow Seeds to a Perfectly Faceted Wetting Layer 133
A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD 133
Continuum Modeling of cyclic growth in Ge/Si(001) heteroepitaxy 131
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 130
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 130
Self-ordering of a Ge island single layer induced by Si overgrowth 128
Unexpected dominance of vertical dislocations in high-misfit ge/si(001) films and their elimination by deep substrate patterning 128
Fast isotropic adatom diffusion on Ge(105) dot facets 127
Local Uniaxial Tensile Deformation of Germanium up to the 4% Threshold by Epitaxial Nanostructures. 127
Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001) 127
Key role of the wetting layer in revealing the hidden path of Ge/Si(001) Stranski-Krastanow growth onset 126
Detailed Analysis of the Shape-dependent Deformation Field in 3D Ge Islands 126
Atomic-scale pathway of the pyramid-to-dome transition during Ge growth on Si(001) 125
Strained MOSFETs on ordered SiGe dots 125
Misfit dislocation gettering by substrate pit-patterning in SiGe films on Si(001) 125
Self-organized evolution of Ge/Si(001) into intersecting bundles of horizontal nanowires during annealing 125
Competing mechanisms in adatom diffusion on a channeled surface: Jumps versus metastable walks 124
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 124
Assessing the delay of plastic relaxation onset in SiGe islands grown on pit-patterned Si(001) substrates 123
Fine control of plastic and elastic relaxation in Ge/Si vertical heterostructures 123
Collective Shape Oscillations of SiGe Islands on Pit-Patterned Si(001) Substrates: A Coherent-Growth Strategy Enabled by Self-Regulated Intermixing 123
Stability of Ge on Si (1 1 10) surfaces and the role of dimer tilting 122
Continuum modeling of heteroepitaxial growth in semiconductors 122
Si/Ge exchange mechanisms at the Ge(105) surface 121
Continuum modeling of Ge/Si heteroepitaxy in the presence of misfit dislocations 121
Continuum modelling of semiconductor heteroepitaxy: an applied perspective 121
Atomistic modeling of step formation and step bunching at the Ge(105) surface 120
Critical shape and size for dislocation nucleation in si1-xGex islands on Si(001) 118
Modelling the kinetic growth mode of GaAs nanomembranes 118
Probability of dimer reassociation in two dimensions 117
Strain and strain-release engineering at epitaxial SiGe islands on Si(0 0 1) for microelectronic applications 116
Motion of crystalline inclusions by interface diffusion in the proximity of free surfaces 115
Atomistic simulation of a 60 degrees shuffle dislocation segment migrating in a Ge/SiGe(001) epitaxial film 114
How pit facet inclination drives heteroepitaxial island positioning on patterned substrates 114
Onset of vertical threading dislocations in Si1-xGex/Si (001) at a critical Ge concentration 114
Anisotropic extended misfit dislocations in overcritical SiGe films by local substrate patterning 114
Totale 16.012
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Categoria #
all - tutte 58.111
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 58.111
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/20191.627 0 0 0 0 0 253 142 77 122 220 375 438
2019/20204.387 520 165 346 357 405 526 685 298 392 281 321 91
2020/20214.300 202 161 416 434 333 327 343 320 360 451 260 693
2021/20223.712 263 332 526 377 217 280 218 206 187 310 274 522
2022/20235.428 570 1.438 553 554 319 713 91 299 404 111 242 134
2023/20241.109 115 181 151 138 473 51 0 0 0 0 0 0
Totale 25.012