Bicocca Open Archive

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MONTALENTI, FRANCESCO CIMBRO MATTIA
 Distribuzione geografica
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Continente #
NA - Nord America 17.710
EU - Europa 9.065
AS - Asia 4.447
SA - Sud America 168
AF - Africa 51
Continente sconosciuto - Info sul continente non disponibili 27
OC - Oceania 11
Totale 31.479
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Nazione #
US - Stati Uniti d'America 17.428
IT - Italia 1.679
DE - Germania 1.632
SG - Singapore 1.559
RU - Federazione Russa 1.339
SE - Svezia 1.271
CN - Cina 1.235
IE - Irlanda 870
UA - Ucraina 781
HK - Hong Kong 710
GB - Regno Unito 485
VN - Vietnam 425
CA - Canada 269
FI - Finlandia 210
AT - Austria 157
FR - Francia 156
ES - Italia 154
BR - Brasile 151
IN - India 135
ID - Indonesia 90
NL - Olanda 86
TR - Turchia 86
DK - Danimarca 70
BE - Belgio 54
JP - Giappone 49
CH - Svizzera 38
KR - Corea 35
EU - Europa 23
PK - Pakistan 22
ZA - Sudafrica 21
TW - Taiwan 20
BD - Bangladesh 15
PL - Polonia 14
IR - Iran 11
AU - Australia 10
IL - Israele 10
RO - Romania 10
CI - Costa d'Avorio 8
NO - Norvegia 8
BG - Bulgaria 7
CZ - Repubblica Ceca 7
PH - Filippine 7
HU - Ungheria 6
KG - Kirghizistan 6
MA - Marocco 6
MX - Messico 6
GR - Grecia 5
AZ - Azerbaigian 4
EC - Ecuador 4
MU - Mauritius 4
PT - Portogallo 4
SA - Arabia Saudita 4
UZ - Uzbekistan 4
A2 - ???statistics.table.value.countryCode.A2??? 3
AR - Argentina 3
CL - Cile 3
EE - Estonia 3
GE - Georgia 3
IQ - Iraq 3
KE - Kenya 3
LK - Sri Lanka 3
LT - Lituania 3
LU - Lussemburgo 3
MD - Moldavia 3
PE - Perù 3
AE - Emirati Arabi Uniti 2
AL - Albania 2
AM - Armenia 2
CO - Colombia 2
CR - Costa Rica 2
DO - Repubblica Dominicana 2
EG - Egitto 2
IS - Islanda 2
JO - Giordania 2
KZ - Kazakistan 2
LA - Repubblica Popolare Democratica del Laos 2
LV - Lettonia 2
SC - Seychelles 2
VE - Venezuela 2
A1 - Anonimo 1
AO - Angola 1
BY - Bielorussia 1
BZ - Belize 1
CG - Congo 1
GW - Guinea-Bissau 1
HR - Croazia 1
JM - Giamaica 1
KW - Kuwait 1
ME - Montenegro 1
NG - Nigeria 1
NZ - Nuova Zelanda 1
PA - Panama 1
RS - Serbia 1
TN - Tunisia 1
Totale 31.479
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Città #
Ann Arbor 4.395
Woodbridge 1.560
Fairfield 1.242
Frankfurt am Main 1.202
Chandler 1.191
Houston 1.152
Singapore 1.075
Jacksonville 857
Dublin 821
Ashburn 740
Hong Kong 687
Wilmington 675
Milan 668
Santa Clara 555
Dearborn 554
Seattle 473
Princeton 416
New York 395
Cambridge 380
Dong Ket 254
Nanjing 222
Altamura 169
Shanghai 164
Lawrence 147
Beijing 138
Lachine 136
Council Bluffs 127
Vienna 127
San Diego 89
Jakarta 86
Nanchang 85
Boardman 68
Shenyang 67
Moscow 65
Toronto 60
Andover 58
Hebei 55
Dresden 52
Helsinki 51
Valladolid 50
Los Angeles 48
Guangzhou 47
Tianjin 47
Southend 43
Brussels 42
Ottawa 42
Changsha 41
Turin 41
Jinan 40
Falls Church 37
Jiaxing 37
London 37
Chicago 36
Norwalk 36
Pune 33
Huizen 30
Sacramento 30
Mountain View 28
Monza 26
Düsseldorf 25
Hangzhou 24
Nuremberg 24
Phoenix 24
Kunming 22
Redmond 21
Rome 21
Zhengzhou 21
Columbus 20
Dallas 20
Taizhou 19
Ardea 18
Como 17
Ningbo 17
Philadelphia 17
Umeda 17
Auburn Hills 16
Fremont 16
Lausanne 16
São Paulo 16
Torino 14
Dalmine 13
Grafing 13
Hefei 13
Munich 13
Marburg 12
Miyamae Ku 12
Yuseong-gu 12
Amsterdam 11
Berlin 11
Kocaeli 11
Malmö 11
Parma 11
Sesto Fiorentino 11
Edmonton 10
Lanzhou 10
Lappeenranta 10
Taipei 10
Brescia 9
Madrid 9
Spirano 9
Totale 22.655
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Nome #
Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study 355
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 344
Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling 338
Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates 333
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A 321
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 318
Computational analysis of low-energy dislocation configurations in graded layers 290
Sunburst pattern by kinetic segregation in core-shell nanowires: A phase-field study 289
Slip trace-induced terrace erosion 257
Reduction of threading dislocation density beyond the saturation limit by optimized reverse grading 257
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 254
Dynamics of crosshatch patterns in heteroepitaxy 246
Growth and coalescence of 3c-sic on si(111) micro-pillars by a phase-field approach 246
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 242
Dislocation-free SiGe/Si heterostructures 238
Multiple stacking fault formation via the evolution of related dislocations by molecular dynamics simulations 237
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film 233
Modeling the dynamics of cross-hatch evolution in heteroepitaxy 232
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 232
Nature and Shape of Stacking Faults in 3C-SiC by Molecular Dynamics Simulations 227
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 225
Straining Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis 220
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment 220
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 216
Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001) 206
Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations 206
Stability of shuffle and glide dislocation segments with increasing misfit in Ge/Si1-xGex(001) epitaxial layers 205
Controlling the relaxation mechanism of low strain Si1- x Gex /Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source 203
Faceting of equilibrium and metastable nanostructures: A phase-field model of surface diffusion tackling realistic shapes 202
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars 199
Strain Engineering in Highly Mismatched SiGe/Si Heterostructures 199
Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures 198
Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy 197
Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures 196
Hydrostatic strain enhancement in laterally confined SiGe nanostripes 192
Vertical and lateral ordering of Ge islands grown on Si(001): Theory and experiments 190
InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires 189
Ab initio results for the adiabatic atom-surface interaction for helium and neon on a simple metal 188
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 188
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation 188
Assessing the composition of hetero-epitaxial islands via morphological analysis: an analytical model matching GeSi/Si(001) data 187
Dynamics of pit filling in heteroepitaxy via phase-field simulations 186
Phenomenological model of nanocrystalline silicon film formation by plasma-enhanced chemical vapor deposition 185
Spontaneous Ge island ordering promoted by partial silicon capping 182
Self-assembled GaAs islands on Si by droplet epitaxy 182
Accurate and analytical strain mapping at the surface of Ge/Si(001) islands by an improved flat-island approximation 182
Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data 178
Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source 177
SiGe nano-stressors for Ge strain-engineering 175
Thermal-hydrogen promoted selective desorption and enhanced mobility of adsorbed radicals in silicon film growth 174
Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments 173
Dislocation engineering in SiGe heteroepitaxial films on patterned Si (001) substrates 173
Self-ordering of a Ge island single layer induced by Si overgrowth 172
Temperature-dependent evolution of the wetting layer thickness during Ge deposition on Si(001) 172
Anomalous Smoothing Preceding Island Formation During Growth on Patterned Substrates 172
Binding sites for SiH2/Si(001): A combined ab initio, tight-binding, and classical investigation 171
Si/Ge exchange mechanisms at the Ge(105) surface 171
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si 171
Collective Shape Oscillations of SiGe Islands on Pit-Patterned Si(001) Substrates: A Coherent-Growth Strategy Enabled by Self-Regulated Intermixing 171
Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling 170
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 168
Modelling the kinetic growth mode of GaAs nanomembranes 168
Relaxed SiGe heteroepitaxy on Si with very thin buffer layers: experimental LEPECVD indications and an interpretation based on strain- dependent dislocation nature 167
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 165
Strained MOSFETs on ordered SiGe dots 165
Monolithic Growth of Ultrathin Ge Nanowires on Si(001) 163
Unexpected dominance of vertical dislocations in high-misfit ge/si(001) films and their elimination by deep substrate patterning 163
Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires 163
Misfit-Dislocation Distributions in Heteroepitaxy: From Mesoscale Measurements to Individual Defects and Back 162
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 162
Key role of the wetting layer in revealing the hidden path of Ge/Si(001) Stranski-Krastanow growth onset 160
Continuum Modeling of cyclic growth in Ge/Si(001) heteroepitaxy 160
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 160
Stability of Ge on Si (1 1 10) surfaces and the role of dimer tilting 158
Formation of Ge Nanoripples on Vicinal Si (1110): From Stranski-Krastanow Seeds to a Perfectly Faceted Wetting Layer 158
Cell cycle effects of gemcitabine 157
Local Uniaxial Tensile Deformation of Germanium up to the 4% Threshold by Epitaxial Nanostructures. 156
A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD 155
Detailed Analysis of the Shape-dependent Deformation Field in 3D Ge Islands 154
Assessing the delay of plastic relaxation onset in SiGe islands grown on pit-patterned Si(001) substrates 153
Self-organized evolution of Ge/Si(001) into intersecting bundles of horizontal nanowires during annealing 153
The formation of a Sn monolayer on Ge(1 0 0) studied at the atomic scale 153
Fine control of plastic and elastic relaxation in Ge/Si vertical heterostructures 152
Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates 152
Continuum modeling of heteroepitaxial growth in semiconductors 152
Misfit dislocation gettering by substrate pit-patterning in SiGe films on Si(001) 151
Atomic-scale pathway of the pyramid-to-dome transition during Ge growth on Si(001) 150
One-dimensional Ge nanostructures on Si(001) and Si(1 1 10): Dominant role of surface energy 150
Crystal free energy of SiC polytypes and stacking faults formation energy from DFT-based lattice-dynamics approach 149
Continuum modelling of semiconductor heteroepitaxy: an applied perspective 148
Critical shape and size for dislocation nucleation in si1-xGex islands on Si(001) 147
Fast isotropic adatom diffusion on Ge(105) dot facets 146
Machine learning potential for interacting dislocations in the presence of free surfaces 145
Anisotropic extended misfit dislocations in overcritical SiGe films by local substrate patterning 144
Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001) 144
Faceting of Equilibrium and Metastable Nano- and Micro- structures: A Phase-Field Model of Surface Diffusion Tackling Realistic Shapes 142
Vacancy-mediated climbing motion of dislocations in Ge/Si films: atomic-scale insights via molecular dynamics 142
Atomic-scale insights on the formation of ordered arrays of edge dislocations in Ge/Si(001) films via molecular dynamics simulations 142
Morphological evolution and compositional segregation effects in core-shell nanowires 141
Atomistic modeling of step formation and step bunching at the Ge(105) surface 140
Totale 19.200
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Categoria #
all - tutte 113.593
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 113.593
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020704 0 0 0 0 0 0 0 0 0 286 326 92
2020/20214.348 206 162 420 438 335 328 346 321 364 456 270 702
2021/20223.740 263 337 535 378 217 280 221 206 188 311 277 527
2022/20235.121 575 1.451 559 555 324 720 60 236 343 57 139 102
2023/20243.066 103 163 129 117 459 716 549 140 236 47 67 340
2024/20255.655 386 963 417 371 640 337 337 407 808 989 0 0
Totale 32.582