MONTALENTI, FRANCESCO CIMBRO MATTIA
 Distribuzione geografica
Continente #
NA - Nord America 16.052
EU - Europa 7.196
AS - Asia 2.343
Continente sconosciuto - Info sul continente non disponibili 27
AF - Africa 19
OC - Oceania 9
SA - Sud America 8
Totale 25.654
Nazione #
US - Stati Uniti d'America 15.790
DE - Germania 1.493
IT - Italia 1.388
SE - Svezia 1.268
CN - Cina 1.141
IE - Irlanda 861
UA - Ucraina 757
GB - Regno Unito 461
VN - Vietnam 425
HK - Hong Kong 384
CA - Canada 260
FI - Finlandia 197
ES - Italia 130
IN - India 130
AT - Austria 126
RU - Federazione Russa 124
FR - Francia 110
TR - Turchia 82
NL - Olanda 72
DK - Danimarca 67
BE - Belgio 52
CH - Svizzera 36
JP - Giappone 34
KR - Corea 34
ID - Indonesia 27
SG - Singapore 24
EU - Europa 23
PK - Pakistan 17
BD - Bangladesh 12
PL - Polonia 12
TW - Taiwan 11
RO - Romania 10
AU - Australia 9
IR - Iran 8
BG - Bulgaria 7
CI - Costa d'Avorio 7
CZ - Repubblica Ceca 6
BR - Brasile 5
IL - Israele 5
GR - Grecia 4
HU - Ungheria 4
A2 - ???statistics.table.value.countryCode.A2??? 3
MU - Mauritius 3
NO - Norvegia 3
SA - Arabia Saudita 3
CL - Cile 2
EE - Estonia 2
MA - Marocco 2
PH - Filippine 2
SC - Seychelles 2
A1 - Anonimo 1
BZ - Belize 1
EC - Ecuador 1
EG - Egitto 1
GE - Georgia 1
GW - Guinea-Bissau 1
HR - Croazia 1
LA - Repubblica Popolare Democratica del Laos 1
LK - Sri Lanka 1
LU - Lussemburgo 1
MD - Moldavia 1
ME - Montenegro 1
MX - Messico 1
NG - Nigeria 1
PT - Portogallo 1
RS - Serbia 1
TN - Tunisia 1
UZ - Uzbekistan 1
ZA - Sudafrica 1
Totale 25.654
Città #
Ann Arbor 4.395
Woodbridge 1.560
Fairfield 1.242
Chandler 1.191
Frankfurt am Main 1.176
Houston 1.152
Jacksonville 857
Dublin 814
Wilmington 675
Ashburn 667
Milan 580
Dearborn 554
Seattle 472
Princeton 414
New York 395
Cambridge 380
Hong Kong 363
Dong Ket 254
Nanjing 222
Altamura 169
Lawrence 147
Shanghai 145
Lachine 136
Beijing 134
Vienna 116
San Diego 89
Nanchang 85
Boardman 68
Shenyang 66
Andover 58
Toronto 56
Hebei 55
Tianjin 46
Helsinki 45
Dresden 43
Southend 43
Brussels 42
Ottawa 42
Changsha 40
Jinan 40
Falls Church 37
Guangzhou 37
Jiaxing 37
Turin 37
Norwalk 36
London 35
Valladolid 35
Pune 33
Huizen 30
Sacramento 30
Mountain View 28
Jakarta 27
Los Angeles 27
Hangzhou 23
Kunming 22
Phoenix 22
Redmond 21
Rome 21
Zhengzhou 20
Ardea 18
Columbus 18
Taizhou 18
Ningbo 17
Philadelphia 17
Umeda 17
Auburn Hills 16
Fremont 16
Lausanne 16
Singapore 16
Torino 14
Grafing 13
Hefei 13
Marburg 12
Yuseong-gu 12
Chicago 11
Kocaeli 11
Malmö 11
Monza 11
Sesto Fiorentino 11
Edmonton 10
Lanzhou 10
Dalmine 9
Munich 9
Villa Bartolomea 9
Amsterdam 8
Cesano Maderno 8
Frankfurt An Der Oder 8
Karlsruhe 8
University Park 8
Xian 8
Abidjan 7
Berlin 7
Campobasso 7
Eindhoven 7
Madrid 7
Novosibirsk 7
Oxford 7
San Mateo 7
Serra 7
Sukkur 7
Totale 20.039
Nome #
Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study 326
Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling 309
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 304
Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates 289
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A 288
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 269
Sunburst pattern by kinetic segregation in core-shell nanowires: A phase-field study 259
Computational analysis of low-energy dislocation configurations in graded layers 256
Slip trace-induced terrace erosion 233
Reduction of threading dislocation density beyond the saturation limit by optimized reverse grading 231
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 223
Growth and coalescence of 3c-sic on si(111) micro-pillars by a phase-field approach 220
Dynamics of crosshatch patterns in heteroepitaxy 216
Modeling the dynamics of cross-hatch evolution in heteroepitaxy 214
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 212
Dislocation-free SiGe/Si heterostructures 205
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 203
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 200
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment 197
Multiple stacking fault formation via the evolution of related dislocations by molecular dynamics simulations 197
Straining Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis 196
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film 191
Controlling the relaxation mechanism of low strain Si1- x Gex /Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source 182
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 180
Stability of shuffle and glide dislocation segments with increasing misfit in Ge/Si1-xGex(001) epitaxial layers 180
Faceting of equilibrium and metastable nanostructures: A phase-field model of surface diffusion tackling realistic shapes 180
Ab initio results for the adiabatic atom-surface interaction for helium and neon on a simple metal 177
Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations 177
Nature and Shape of Stacking Faults in 3C-SiC by Molecular Dynamics Simulations 177
Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy 176
Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures 175
Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures 173
Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001) 172
Strain Engineering in Highly Mismatched SiGe/Si Heterostructures 170
Dynamics of pit filling in heteroepitaxy via phase-field simulations 167
Self-assembled GaAs islands on Si by droplet epitaxy 165
Vertical and lateral ordering of Ge islands grown on Si(001): Theory and experiments 165
Hydrostatic strain enhancement in laterally confined SiGe nanostripes 162
InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires 160
Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source 159
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars 158
Spontaneous Ge island ordering promoted by partial silicon capping 156
Accurate and analytical strain mapping at the surface of Ge/Si(001) islands by an improved flat-island approximation 156
Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling 155
Anomalous Smoothing Preceding Island Formation During Growth on Patterned Substrates 154
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation 154
Temperature-dependent evolution of the wetting layer thickness during Ge deposition on Si(001) 153
Assessing the composition of hetero-epitaxial islands via morphological analysis: an analytical model matching GeSi/Si(001) data 153
SiGe nano-stressors for Ge strain-engineering 152
Thermal-hydrogen promoted selective desorption and enhanced mobility of adsorbed radicals in silicon film growth 150
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 149
Binding sites for SiH2/Si(001): A combined ab initio, tight-binding, and classical investigation 148
Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments 148
Dislocation engineering in SiGe heteroepitaxial films on patterned Si (001) substrates 148
Phenomenological model of nanocrystalline silicon film formation by plasma-enhanced chemical vapor deposition 147
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si 147
Misfit-Dislocation Distributions in Heteroepitaxy: From Mesoscale Measurements to Individual Defects and Back 146
Monolithic Growth of Ultrathin Ge Nanowires on Si(001) 145
Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data 142
Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires 142
Cell cycle effects of gemcitabine 141
Continuum Modeling of cyclic growth in Ge/Si(001) heteroepitaxy 141
A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD 141
Relaxed SiGe heteroepitaxy on Si with very thin buffer layers: experimental LEPECVD indications and an interpretation based on strain- dependent dislocation nature 140
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 139
Strained MOSFETs on ordered SiGe dots 138
Formation of Ge Nanoripples on Vicinal Si (1110): From Stranski-Krastanow Seeds to a Perfectly Faceted Wetting Layer 137
Key role of the wetting layer in revealing the hidden path of Ge/Si(001) Stranski-Krastanow growth onset 136
Unexpected dominance of vertical dislocations in high-misfit ge/si(001) films and their elimination by deep substrate patterning 136
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 136
Self-ordering of a Ge island single layer induced by Si overgrowth 135
Detailed Analysis of the Shape-dependent Deformation Field in 3D Ge Islands 135
Critical shape and size for dislocation nucleation in si1-xGex islands on Si(001) 134
Collective Shape Oscillations of SiGe Islands on Pit-Patterned Si(001) Substrates: A Coherent-Growth Strategy Enabled by Self-Regulated Intermixing 134
Si/Ge exchange mechanisms at the Ge(105) surface 133
Modelling the kinetic growth mode of GaAs nanomembranes 133
Stability of Ge on Si (1 1 10) surfaces and the role of dimer tilting 131
Self-organized evolution of Ge/Si(001) into intersecting bundles of horizontal nanowires during annealing 131
One-dimensional Ge nanostructures on Si(001) and Si(1 1 10): Dominant role of surface energy 131
Fine control of plastic and elastic relaxation in Ge/Si vertical heterostructures 131
Local Uniaxial Tensile Deformation of Germanium up to the 4% Threshold by Epitaxial Nanostructures. 131
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 131
Fast isotropic adatom diffusion on Ge(105) dot facets 130
Atomic-scale pathway of the pyramid-to-dome transition during Ge growth on Si(001) 129
Misfit dislocation gettering by substrate pit-patterning in SiGe films on Si(001) 129
Competing mechanisms in adatom diffusion on a channeled surface: Jumps versus metastable walks 129
Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001) 128
Continuum modelling of semiconductor heteroepitaxy: an applied perspective 127
Continuum modeling of heteroepitaxial growth in semiconductors 127
The formation of a Sn monolayer on Ge(1 0 0) studied at the atomic scale 127
Assessing the delay of plastic relaxation onset in SiGe islands grown on pit-patterned Si(001) substrates 126
Faceting of Equilibrium and Metastable Nano- and Micro- structures: A Phase-Field Model of Surface Diffusion Tackling Realistic Shapes 126
Atomistic modeling of step formation and step bunching at the Ge(105) surface 124
Strain and strain-release engineering at epitaxial SiGe islands on Si(0 0 1) for microelectronic applications 124
Atomistic simulation of a 60 degrees shuffle dislocation segment migrating in a Ge/SiGe(001) epitaxial film 123
Continuum modeling of Ge/Si heteroepitaxy in the presence of misfit dislocations 123
Anisotropic extended misfit dislocations in overcritical SiGe films by local substrate patterning 122
Probability of dimer reassociation in two dimensions 120
How pit facet inclination drives heteroepitaxial island positioning on patterned substrates 119
Ab-initio adiabatic noble gas-metal interaction: the role of the induced polarization charge 119
Totale 16.565
Categoria #
all - tutte 77.611
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 77.611


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019449 0 0 0 0 0 0 0 0 0 0 0 449
2019/20204.467 531 168 353 364 414 534 697 303 399 286 326 92
2020/20214.348 206 162 420 438 335 328 346 321 364 456 270 702
2021/20223.740 263 337 535 378 217 280 221 206 188 311 277 527
2022/20235.121 575 1.451 559 555 324 720 60 236 343 57 139 102
2023/20242.811 103 163 129 117 459 716 549 140 236 47 67 85
Totale 26.672