Bicocca Open Archive

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MONTALENTI, FRANCESCO CIMBRO MATTIA
 Distribuzione geografica
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Continente #
NA - Nord America 20.347
AS - Asia 10.055
EU - Europa 10.002
SA - Sud America 1.327
AF - Africa 156
Continente sconosciuto - Info sul continente non disponibili 27
OC - Oceania 15
Totale 41.929
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Nazione #
US - Stati Uniti d'America 19.926
SG - Singapore 3.513
CN - Cina 2.641
IT - Italia 1.885
HK - Hong Kong 1.724
DE - Germania 1.712
RU - Federazione Russa 1.564
SE - Svezia 1.287
BR - Brasile 1.090
VN - Vietnam 1.070
IE - Irlanda 872
UA - Ucraina 806
GB - Regno Unito 571
CA - Canada 325
FI - Finlandia 257
FR - Francia 251
IN - India 236
ES - Italia 190
KR - Corea 177
AT - Austria 170
TR - Turchia 116
ID - Indonesia 110
NL - Olanda 101
AR - Argentina 95
JP - Giappone 91
BD - Bangladesh 85
DK - Danimarca 72
ZA - Sudafrica 65
BE - Belgio 58
CH - Svizzera 57
MX - Messico 57
PK - Pakistan 47
PL - Polonia 45
IQ - Iraq 44
EC - Ecuador 37
CO - Colombia 34
TW - Taiwan 26
SA - Arabia Saudita 24
EU - Europa 23
MA - Marocco 23
VE - Venezuela 21
LT - Lituania 17
IL - Israele 16
PY - Paraguay 16
UZ - Uzbekistan 16
NP - Nepal 14
AE - Emirati Arabi Uniti 13
AU - Australia 13
KE - Kenya 13
CL - Cile 12
IR - Iran 12
RO - Romania 11
CI - Costa d'Avorio 10
EG - Egitto 10
JO - Giordania 10
PH - Filippine 10
HU - Ungheria 9
PE - Perù 9
AZ - Azerbaigian 8
NO - Norvegia 8
TN - Tunisia 8
UY - Uruguay 8
AL - Albania 7
BG - Bulgaria 7
CZ - Repubblica Ceca 7
DO - Repubblica Dominicana 7
KG - Kirghizistan 7
JM - Giamaica 6
MY - Malesia 6
TH - Thailandia 6
BY - Bielorussia 5
CR - Costa Rica 5
GR - Grecia 5
HN - Honduras 5
PT - Portogallo 5
TT - Trinidad e Tobago 5
BO - Bolivia 4
EE - Estonia 4
ET - Etiopia 4
GE - Georgia 4
KZ - Kazakistan 4
MD - Moldavia 4
MU - Mauritius 4
OM - Oman 4
A2 - ???statistics.table.value.countryCode.A2??? 3
AO - Angola 3
BH - Bahrain 3
DZ - Algeria 3
GA - Gabon 3
KW - Kuwait 3
LK - Sri Lanka 3
LU - Lussemburgo 3
PA - Panama 3
SY - Repubblica araba siriana 3
AM - Armenia 2
BA - Bosnia-Erzegovina 2
BZ - Belize 2
IS - Islanda 2
KH - Cambogia 2
LA - Repubblica Popolare Democratica del Laos 2
Totale 41.898
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Città #
Ann Arbor 4.395
Singapore 1.933
Hong Kong 1.687
Woodbridge 1.560
Ashburn 1.308
Fairfield 1.242
Frankfurt am Main 1.220
Chandler 1.191
Houston 1.162
Jacksonville 860
Dublin 823
Milan 751
Wilmington 679
Santa Clara 581
Dearborn 554
Seattle 481
Beijing 454
New York 442
Dallas 438
Princeton 416
Cambridge 380
Hefei 330
Los Angeles 261
Dong Ket 254
Ho Chi Minh City 223
Nanjing 222
Shanghai 183
Altamura 169
Hanoi 161
Lawrence 147
Buffalo 136
Lachine 136
Seoul 136
Moscow 134
Vienna 133
The Dalles 132
Council Bluffs 131
Chicago 108
São Paulo 103
Jakarta 91
San Diego 90
Nanchang 86
Shenyang 71
Boardman 68
Toronto 67
Guangzhou 66
Andover 58
Helsinki 58
Dresden 57
London 57
Tianjin 57
Hebei 55
Changsha 54
Valladolid 53
Ottawa 45
Phoenix 45
Jinan 44
Munich 44
Turin 44
Southend 43
Brussels 42
Tokyo 42
Jiaxing 38
Falls Church 37
Norwalk 36
Redondo Beach 34
Rome 34
Brooklyn 33
Pune 33
Monza 32
Rio de Janeiro 32
Sacramento 32
Hangzhou 30
Huizen 30
Montreal 30
Kent 29
Warsaw 29
Zhengzhou 29
Mountain View 28
Nuremberg 28
Turku 27
Columbus 26
Düsseldorf 26
San Francisco 26
Lausanne 25
Atlanta 24
Boston 24
Brasília 24
Dhaka 24
Amsterdam 23
Da Nang 23
Haiphong 23
Kunming 23
Chennai 22
Lappeenranta 21
Redmond 21
Salt Lake City 21
Taizhou 21
Mexico City 20
Philadelphia 19
Totale 28.030
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Nome #
Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study 409
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 391
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 391
Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling 387
Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates 374
Stability of Ge on Si (1 1 10) surfaces and the role of dimer tilting 369
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A 367
Computational analysis of low-energy dislocation configurations in graded layers 329
Sunburst pattern by kinetic segregation in core-shell nanowires: A phase-field study 320
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 307
Multiple stacking fault formation via the evolution of related dislocations by molecular dynamics simulations 297
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 296
Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001) 290
Nature and Shape of Stacking Faults in 3C-SiC by Molecular Dynamics Simulations 289
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 286
Slip trace-induced terrace erosion 283
Dislocation-free SiGe/Si heterostructures 282
Reduction of threading dislocation density beyond the saturation limit by optimized reverse grading 282
Straining Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis 281
Growth and coalescence of 3c-sic on si(111) micro-pillars by a phase-field approach 281
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film 278
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 276
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment 275
Dynamics of crosshatch patterns in heteroepitaxy 270
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 269
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars 264
Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations 259
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 258
Modeling the dynamics of cross-hatch evolution in heteroepitaxy 253
InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires 252
Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures 247
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation 244
Strain Engineering in Highly Mismatched SiGe/Si Heterostructures 243
Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures 241
Stability of shuffle and glide dislocation segments with increasing misfit in Ge/Si1-xGex(001) epitaxial layers 241
Faceting of equilibrium and metastable nanostructures: A phase-field model of surface diffusion tackling realistic shapes 239
Spontaneous Ge island ordering promoted by partial silicon capping 232
Assessing the composition of hetero-epitaxial islands via morphological analysis: an analytical model matching GeSi/Si(001) data 231
SiGe nano-stressors for Ge strain-engineering 231
Controlling the relaxation mechanism of low strain Si1- x Gex /Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source 231
Hydrostatic strain enhancement in laterally confined SiGe nanostripes 230
Vertical and lateral ordering of Ge islands grown on Si(001): Theory and experiments 227
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 226
Accurate and analytical strain mapping at the surface of Ge/Si(001) islands by an improved flat-island approximation 224
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si 224
Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy 223
Ab initio results for the adiabatic atom-surface interaction for helium and neon on a simple metal 221
Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires 221
Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments 220
Phenomenological model of nanocrystalline silicon film formation by plasma-enhanced chemical vapor deposition 220
Self-assembled GaAs islands on Si by droplet epitaxy 219
Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data 218
Thermal-hydrogen promoted selective desorption and enhanced mobility of adsorbed radicals in silicon film growth 218
Self-ordering of a Ge island single layer induced by Si overgrowth 217
Dynamics of pit filling in heteroepitaxy via phase-field simulations 217
Dislocation engineering in SiGe heteroepitaxial films on patterned Si (001) substrates 216
Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source 215
Collective Shape Oscillations of SiGe Islands on Pit-Patterned Si(001) Substrates: A Coherent-Growth Strategy Enabled by Self-Regulated Intermixing 214
Si/Ge exchange mechanisms at the Ge(105) surface 213
Monolithic Growth of Ultrathin Ge Nanowires on Si(001) 212
Vacancy-mediated climbing motion of dislocations in Ge/Si films: atomic-scale insights via molecular dynamics 210
Strained MOSFETs on ordered SiGe dots 209
Local Uniaxial Tensile Deformation of Germanium up to the 4% Threshold by Epitaxial Nanostructures. 209
Cell cycle effects of gemcitabine 208
Modelling the kinetic growth mode of GaAs nanomembranes 208
In-Plane Nanowire Growth of Topological Crystalline Insulator Pb₁₋ₓSnₓTe 208
Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling 207
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 205
Simulating morphological evolutions by Convolutional Neural Networks 204
Binding sites for SiH2/Si(001): A combined ab initio, tight-binding, and classical investigation 204
Formation of Ge Nanoripples on Vicinal Si (1110): From Stranski-Krastanow Seeds to a Perfectly Faceted Wetting Layer 204
Simulations of strained films evolution: extending accessible timescales through Convolutional Neural Networks 203
Unexpected dominance of vertical dislocations in high-misfit ge/si(001) films and their elimination by deep substrate patterning 203
Continuum modeling of heteroepitaxial growth in semiconductors 203
Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates 201
Key role of the wetting layer in revealing the hidden path of Ge/Si(001) Stranski-Krastanow growth onset 200
Temperature-dependent evolution of the wetting layer thickness during Ge deposition on Si(001) 199
Detailed Analysis of the Shape-dependent Deformation Field in 3D Ge Islands 199
Atomic-scale pathway of the pyramid-to-dome transition during Ge growth on Si(001) 197
Anomalous Smoothing Preceding Island Formation During Growth on Patterned Substrates 197
Atomic-scale insights on the formation of ordered arrays of edge dislocations in Ge/Si(001) films via molecular dynamics simulations 197
Unraveling the atomic-scale pathways driving pressure-induced phase transitions in silicon 196
Self-organized evolution of Ge/Si(001) into intersecting bundles of horizontal nanowires during annealing 196
Relaxed SiGe heteroepitaxy on Si with very thin buffer layers: experimental LEPECVD indications and an interpretation based on strain- dependent dislocation nature 195
How pit facet inclination drives heteroepitaxial island positioning on patterned substrates 195
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 195
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 195
Accelerating simulations of strained-film growth by deep learning: Finite element method accuracy over long time scales 194
Misfit dislocation gettering by substrate pit-patterning in SiGe films on Si(001) 193
Assessing the delay of plastic relaxation onset in SiGe islands grown on pit-patterned Si(001) substrates 192
Machine learning potential for interacting dislocations in the presence of free surfaces 192
Misfit-Dislocation Distributions in Heteroepitaxy: From Mesoscale Measurements to Individual Defects and Back 191
3D heteroepitaxy on patterned Si substrates: a new monolithic integration strategy 190
Continuum Modeling of cyclic growth in Ge/Si(001) heteroepitaxy 190
Modeling the plastic relaxation onset in realistic SiGe islands on Si(001) 189
One-dimensional Ge nanostructures on Si(001) and Si(1 1 10): Dominant role of surface energy 186
Continuum modelling of semiconductor heteroepitaxy: an applied perspective 186
A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD 185
Morphological evolution and compositional segregation effects in core-shell nanowires 185
Critical shape and size for dislocation nucleation in si1-xGex islands on Si(001) 183
Totale 23.843
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Categoria #
all - tutte 142.775
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 142.775
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20212.787 0 0 0 0 0 328 346 321 364 456 270 702
2021/20223.740 263 337 535 378 217 280 221 206 188 311 277 527
2022/20235.121 575 1.451 559 555 324 720 60 236 343 57 139 102
2023/20243.066 103 163 129 117 459 716 549 140 236 47 67 340
2024/20258.042 386 963 417 371 640 337 337 407 808 1.091 697 1.588
2025/20268.096 1.547 1.203 1.619 1.397 2.071 259 0 0 0 0 0 0
Totale 43.065