Bicocca Open Archive

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MONTALENTI, FRANCESCO CIMBRO MATTIA
 Distribuzione geografica
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Continente #
NA - Nord America 20.482
AS - Asia 10.616
EU - Europa 10.043
SA - Sud America 1.345
AF - Africa 160
Continente sconosciuto - Info sul continente non disponibili 27
OC - Oceania 15
Totale 42.688
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Nazione #
US - Stati Uniti d'America 20.052
SG - Singapore 4.011
CN - Cina 2.675
IT - Italia 1.899
HK - Hong Kong 1.725
DE - Germania 1.712
RU - Federazione Russa 1.565
SE - Svezia 1.288
BR - Brasile 1.102
VN - Vietnam 1.076
IE - Irlanda 873
UA - Ucraina 806
GB - Regno Unito 581
CA - Canada 327
FI - Finlandia 258
FR - Francia 257
IN - India 240
ES - Italia 191
KR - Corea 177
AT - Austria 170
TR - Turchia 117
ID - Indonesia 110
NL - Olanda 101
AR - Argentina 97
JP - Giappone 94
BD - Bangladesh 88
DK - Danimarca 72
ZA - Sudafrica 68
MX - Messico 63
BE - Belgio 58
CH - Svizzera 57
IQ - Iraq 50
PK - Pakistan 48
PL - Polonia 48
EC - Ecuador 37
CO - Colombia 34
TW - Taiwan 26
SA - Arabia Saudita 24
EU - Europa 23
MA - Marocco 23
VE - Venezuela 21
IL - Israele 17
LT - Lituania 17
PY - Paraguay 17
UZ - Uzbekistan 17
NP - Nepal 14
AE - Emirati Arabi Uniti 13
AU - Australia 13
CL - Cile 13
KE - Kenya 13
IR - Iran 12
PE - Perù 11
RO - Romania 11
CI - Costa d'Avorio 10
EG - Egitto 10
JO - Giordania 10
PH - Filippine 10
HU - Ungheria 9
TN - Tunisia 9
AZ - Azerbaigian 8
DO - Repubblica Dominicana 8
NO - Norvegia 8
UY - Uruguay 8
AL - Albania 7
BG - Bulgaria 7
CZ - Repubblica Ceca 7
KG - Kirghizistan 7
PT - Portogallo 7
JM - Giamaica 6
MY - Malesia 6
TH - Thailandia 6
BY - Bielorussia 5
CR - Costa Rica 5
GE - Georgia 5
GR - Grecia 5
HN - Honduras 5
MD - Moldavia 5
TT - Trinidad e Tobago 5
BO - Bolivia 4
EE - Estonia 4
ET - Etiopia 4
KZ - Kazakistan 4
MU - Mauritius 4
OM - Oman 4
SY - Repubblica araba siriana 4
A2 - ???statistics.table.value.countryCode.A2??? 3
AO - Angola 3
BH - Bahrain 3
DZ - Algeria 3
GA - Gabon 3
KW - Kuwait 3
LK - Sri Lanka 3
LU - Lussemburgo 3
PA - Panama 3
AM - Armenia 2
BA - Bosnia-Erzegovina 2
BZ - Belize 2
IS - Islanda 2
KH - Cambogia 2
LA - Repubblica Popolare Democratica del Laos 2
Totale 42.657
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Città #
Ann Arbor 4.395
Singapore 2.136
Hong Kong 1.688
Woodbridge 1.560
Ashburn 1.340
Fairfield 1.242
Frankfurt am Main 1.220
Chandler 1.191
Houston 1.162
Jacksonville 860
Dublin 824
Milan 753
Wilmington 679
Santa Clara 581
Dearborn 554
Seattle 481
Beijing 458
New York 447
Dallas 439
Princeton 416
Cambridge 380
Hefei 330
Los Angeles 267
Dong Ket 254
Ho Chi Minh City 228
Nanjing 222
Shanghai 186
Altamura 169
Hanoi 162
The Dalles 158
Lawrence 147
Council Bluffs 138
Buffalo 136
Lachine 136
Seoul 136
Moscow 134
Vienna 133
Chicago 108
São Paulo 107
Jakarta 91
San Diego 90
Nanchang 86
Shenyang 71
Boardman 68
Toronto 67
Guangzhou 66
London 59
Andover 58
Helsinki 58
Dresden 57
Tianjin 57
Hebei 55
Changsha 54
Valladolid 53
Phoenix 46
Ottawa 45
Jinan 44
Munich 44
Turin 44
Southend 43
Tokyo 43
Brussels 42
Jiaxing 38
Falls Church 37
Norwalk 36
Rome 35
Redondo Beach 34
Brooklyn 33
Pune 33
Montreal 32
Monza 32
Rio de Janeiro 32
Sacramento 32
Warsaw 32
Hangzhou 30
Huizen 30
Kent 29
Zhengzhou 29
Mountain View 28
Nuremberg 28
Turku 27
Columbus 26
Düsseldorf 26
San Francisco 26
Lausanne 25
Atlanta 24
Boston 24
Brasília 24
Chennai 24
Dhaka 24
Amsterdam 23
Da Nang 23
Haiphong 23
Kunming 23
Lappeenranta 22
Mexico City 22
Salt Lake City 22
Redmond 21
San Jose 21
Taizhou 21
Totale 28.349
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Nome #
Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study 413
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 397
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 394
Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling 391
Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates 377
Stability of Ge on Si (1 1 10) surfaces and the role of dimer tilting 374
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A 369
Computational analysis of low-energy dislocation configurations in graded layers 331
Sunburst pattern by kinetic segregation in core-shell nanowires: A phase-field study 323
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 310
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 303
Multiple stacking fault formation via the evolution of related dislocations by molecular dynamics simulations 301
Nature and Shape of Stacking Faults in 3C-SiC by Molecular Dynamics Simulations 294
Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001) 293
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 290
Reduction of threading dislocation density beyond the saturation limit by optimized reverse grading 285
Straining Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis 284
Dislocation-free SiGe/Si heterostructures 284
Slip trace-induced terrace erosion 284
Growth and coalescence of 3c-sic on si(111) micro-pillars by a phase-field approach 284
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 283
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film 280
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment 278
Dynamics of crosshatch patterns in heteroepitaxy 272
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 271
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars 269
InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires 264
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 261
Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations 261
Modeling the dynamics of cross-hatch evolution in heteroepitaxy 257
Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures 252
Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures 245
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation 245
Strain Engineering in Highly Mismatched SiGe/Si Heterostructures 244
Stability of shuffle and glide dislocation segments with increasing misfit in Ge/Si1-xGex(001) epitaxial layers 244
Faceting of equilibrium and metastable nanostructures: A phase-field model of surface diffusion tackling realistic shapes 244
SiGe nano-stressors for Ge strain-engineering 235
Spontaneous Ge island ordering promoted by partial silicon capping 234
Controlling the relaxation mechanism of low strain Si1- x Gex /Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source 233
Hydrostatic strain enhancement in laterally confined SiGe nanostripes 233
Assessing the composition of hetero-epitaxial islands via morphological analysis: an analytical model matching GeSi/Si(001) data 232
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 232
Vertical and lateral ordering of Ge islands grown on Si(001): Theory and experiments 231
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si 229
Accurate and analytical strain mapping at the surface of Ge/Si(001) islands by an improved flat-island approximation 226
Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy 226
Dynamics of pit filling in heteroepitaxy via phase-field simulations 224
Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires 224
Self-ordering of a Ge island single layer induced by Si overgrowth 223
Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments 223
Dislocation engineering in SiGe heteroepitaxial films on patterned Si (001) substrates 223
Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data 222
Phenomenological model of nanocrystalline silicon film formation by plasma-enhanced chemical vapor deposition 222
Ab initio results for the adiabatic atom-surface interaction for helium and neon on a simple metal 222
Self-assembled GaAs islands on Si by droplet epitaxy 221
Thermal-hydrogen promoted selective desorption and enhanced mobility of adsorbed radicals in silicon film growth 220
Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source 217
Monolithic Growth of Ultrathin Ge Nanowires on Si(001) 216
Collective Shape Oscillations of SiGe Islands on Pit-Patterned Si(001) Substrates: A Coherent-Growth Strategy Enabled by Self-Regulated Intermixing 216
Si/Ge exchange mechanisms at the Ge(105) surface 215
Vacancy-mediated climbing motion of dislocations in Ge/Si films: atomic-scale insights via molecular dynamics 215
Local Uniaxial Tensile Deformation of Germanium up to the 4% Threshold by Epitaxial Nanostructures. 212
Cell cycle effects of gemcitabine 211
Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling 211
Strained MOSFETs on ordered SiGe dots 210
Modelling the kinetic growth mode of GaAs nanomembranes 210
In-Plane Nanowire Growth of Topological Crystalline Insulator Pb₁₋ₓSnₓTe 210
Simulations of strained films evolution: extending accessible timescales through Convolutional Neural Networks 208
Simulating morphological evolutions by Convolutional Neural Networks 207
Key role of the wetting layer in revealing the hidden path of Ge/Si(001) Stranski-Krastanow growth onset 207
Formation of Ge Nanoripples on Vicinal Si (1110): From Stranski-Krastanow Seeds to a Perfectly Faceted Wetting Layer 207
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 207
Binding sites for SiH2/Si(001): A combined ab initio, tight-binding, and classical investigation 206
Unexpected dominance of vertical dislocations in high-misfit ge/si(001) films and their elimination by deep substrate patterning 205
Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates 204
Continuum modeling of heteroepitaxial growth in semiconductors 204
Unraveling the atomic-scale pathways driving pressure-induced phase transitions in silicon 201
Temperature-dependent evolution of the wetting layer thickness during Ge deposition on Si(001) 201
Detailed Analysis of the Shape-dependent Deformation Field in 3D Ge Islands 201
How pit facet inclination drives heteroepitaxial island positioning on patterned substrates 199
Anomalous Smoothing Preceding Island Formation During Growth on Patterned Substrates 199
Misfit dislocation gettering by substrate pit-patterning in SiGe films on Si(001) 199
Atomic-scale pathway of the pyramid-to-dome transition during Ge growth on Si(001) 198
Self-organized evolution of Ge/Si(001) into intersecting bundles of horizontal nanowires during annealing 198
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 198
Atomic-scale insights on the formation of ordered arrays of edge dislocations in Ge/Si(001) films via molecular dynamics simulations 198
Accelerating simulations of strained-film growth by deep learning: Finite element method accuracy over long time scales 197
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 197
Relaxed SiGe heteroepitaxy on Si with very thin buffer layers: experimental LEPECVD indications and an interpretation based on strain- dependent dislocation nature 196
Machine learning potential for interacting dislocations in the presence of free surfaces 195
3D heteroepitaxy on patterned Si substrates: a new monolithic integration strategy 194
Assessing the delay of plastic relaxation onset in SiGe islands grown on pit-patterned Si(001) substrates 193
Continuum Modeling of cyclic growth in Ge/Si(001) heteroepitaxy 192
Misfit-Dislocation Distributions in Heteroepitaxy: From Mesoscale Measurements to Individual Defects and Back 192
Modeling the plastic relaxation onset in realistic SiGe islands on Si(001) 190
One-dimensional Ge nanostructures on Si(001) and Si(1 1 10): Dominant role of surface energy 189
Continuum modelling of semiconductor heteroepitaxy: an applied perspective 188
Critical shape and size for dislocation nucleation in si1-xGex islands on Si(001) 187
Phase‐Field modeling of semiconductor heteroepitaxy: elastic relaxation, surface energy minimization and intermixing 187
A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD 187
Totale 24.160
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Categoria #
all - tutte 145.955
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 145.955
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20212.459 0 0 0 0 0 0 346 321 364 456 270 702
2021/20223.740 263 337 535 378 217 280 221 206 188 311 277 527
2022/20235.121 575 1.451 559 555 324 720 60 236 343 57 139 102
2023/20243.066 103 163 129 117 459 716 549 140 236 47 67 340
2024/20258.042 386 963 417 371 640 337 337 407 808 1.091 697 1.588
2025/20268.855 1.547 1.203 1.619 1.397 2.071 997 21 0 0 0 0 0
Totale 43.824