Bicocca Open Archive

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MONTALENTI, FRANCESCO CIMBRO MATTIA
 Distribuzione geografica
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Continente #
NA - Nord America 23.100
AS - Asia 13.813
EU - Europa 10.784
SA - Sud America 1.715
AF - Africa 313
Continente sconosciuto - Info sul continente non disponibili 29
OC - Oceania 20
Totale 49.774
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Nazione #
US - Stati Uniti d'America 22.594
SG - Singapore 5.126
CN - Cina 2.950
IT - Italia 2.005
VN - Vietnam 1.861
HK - Hong Kong 1.800
DE - Germania 1.763
RU - Federazione Russa 1.592
BR - Brasile 1.292
SE - Svezia 1.292
IE - Irlanda 878
UA - Ucraina 832
GB - Regno Unito 655
FR - Francia 498
IN - India 439
CA - Canada 358
FI - Finlandia 289
KR - Corea 262
ES - Italia 228
TR - Turchia 199
BD - Bangladesh 197
AT - Austria 178
AR - Argentina 152
ID - Indonesia 148
IQ - Iraq 127
PK - Pakistan 117
NL - Olanda 114
JP - Giappone 113
CH - Svizzera 107
ZA - Sudafrica 92
MX - Messico 84
SA - Arabia Saudita 77
DK - Danimarca 72
CO - Colombia 69
BE - Belgio 63
EC - Ecuador 60
PL - Polonia 59
PH - Filippine 57
UZ - Uzbekistan 44
VE - Venezuela 40
CL - Cile 36
MA - Marocco 36
TW - Taiwan 32
KE - Kenya 27
NP - Nepal 27
PY - Paraguay 27
TN - Tunisia 26
IL - Israele 25
EU - Europa 23
MY - Malesia 23
AE - Emirati Arabi Uniti 22
ET - Etiopia 22
JO - Giordania 22
LT - Lituania 19
TH - Thailandia 19
EG - Egitto 18
AU - Australia 17
AZ - Azerbaigian 17
DZ - Algeria 17
AL - Albania 15
PE - Perù 15
OM - Oman 14
HU - Ungheria 13
CI - Costa d'Avorio 12
IR - Iran 12
PT - Portogallo 12
RO - Romania 12
SN - Senegal 12
UY - Uruguay 12
CZ - Repubblica Ceca 11
DO - Repubblica Dominicana 11
JM - Giamaica 11
KG - Kirghizistan 11
LB - Libano 10
BO - Bolivia 9
GE - Georgia 9
GR - Grecia 9
HN - Honduras 9
RS - Serbia 9
SC - Seychelles 9
BG - Bulgaria 8
BY - Bielorussia 8
KZ - Kazakistan 8
NO - Norvegia 8
BH - Bahrain 7
CR - Costa Rica 7
MD - Moldavia 7
PS - Palestinian Territory 7
AO - Angola 6
ME - Montenegro 6
MU - Mauritius 6
NI - Nicaragua 6
PA - Panama 6
SY - Repubblica araba siriana 6
EE - Estonia 5
TT - Trinidad e Tobago 5
ZW - Zimbabwe 5
GA - Gabon 4
KW - Kuwait 4
LK - Sri Lanka 4
Totale 49.698
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Città #
Ann Arbor 4.395
Singapore 2.855
Hong Kong 1.743
Ashburn 1.678
Woodbridge 1.561
San Jose 1.252
Fairfield 1.242
Frankfurt am Main 1.241
Chandler 1.191
Houston 1.164
Jacksonville 862
Dublin 829
Milan 773
Wilmington 679
Santa Clara 593
Dearborn 554
Seattle 481
Beijing 476
New York 471
Dallas 459
Ho Chi Minh City 449
Princeton 416
Cambridge 382
Hanoi 360
Chicago 351
The Dalles 349
Hefei 332
Los Angeles 322
Dong Ket 254
Nanjing 224
Seoul 218
Lauterbourg 209
Council Bluffs 200
Shanghai 190
Altamura 169
Lawrence 147
Buffalo 143
Vienna 140
Moscow 137
Lachine 136
São Paulo 133
Jakarta 97
San Diego 92
Helsinki 87
Nanchang 86
Shenyang 72
Toronto 72
Boardman 71
Guangzhou 69
London 65
Zurich 61
Dresden 60
Valladolid 59
Andover 58
Changsha 57
Tianjin 57
Haiphong 56
Hebei 55
Tokyo 55
Da Nang 54
Phoenix 52
Orem 51
Baghdad 46
Turin 46
Ottawa 45
Chennai 44
Jinan 44
Munich 44
Atlanta 43
Brussels 43
Rio de Janeiro 43
Southend 43
Pune 42
Dhaka 39
Montreal 39
Rome 39
Basingstoke 38
Jiaxing 38
Warsaw 38
Falls Church 37
Lahore 36
Norwalk 36
Brooklyn 35
Redondo Beach 34
Sacramento 33
Monza 32
Washington 32
Hangzhou 31
Nuremberg 31
Zhengzhou 31
Huizen 30
Johannesburg 30
Kent 30
Riyadh 30
Tashkent 30
Amsterdam 29
Mountain View 28
San Francisco 28
Brasília 27
Columbus 27
Totale 32.517
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Nome #
Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study 448
Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling 440
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 438
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 422
Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates 410
Stability of Ge on Si (1 1 10) surfaces and the role of dimer tilting 406
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A 397
Computational analysis of low-energy dislocation configurations in graded layers 372
Sunburst pattern by kinetic segregation in core-shell nanowires: A phase-field study 363
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 349
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 346
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 343
Nature and Shape of Stacking Faults in 3C-SiC by Molecular Dynamics Simulations 340
Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001) 337
Multiple stacking fault formation via the evolution of related dislocations by molecular dynamics simulations 337
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 329
Reduction of threading dislocation density beyond the saturation limit by optimized reverse grading 324
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 323
InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires 320
Dislocation-free SiGe/Si heterostructures 320
Growth and coalescence of 3c-sic on si(111) micro-pillars by a phase-field approach 320
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment 315
Straining Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis 314
Slip trace-induced terrace erosion 309
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars 307
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film 302
Dynamics of crosshatch patterns in heteroepitaxy 294
Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations 294
Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures 289
Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures 288
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 287
Modeling the dynamics of cross-hatch evolution in heteroepitaxy 281
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 279
Stability of shuffle and glide dislocation segments with increasing misfit in Ge/Si1-xGex(001) epitaxial layers 274
SiGe nano-stressors for Ge strain-engineering 271
Faceting of equilibrium and metastable nanostructures: A phase-field model of surface diffusion tackling realistic shapes 271
Strain Engineering in Highly Mismatched SiGe/Si Heterostructures 270
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation 269
Unraveling the atomic-scale pathways driving pressure-induced phase transitions in silicon 268
Vacancy-mediated climbing motion of dislocations in Ge/Si films: atomic-scale insights via molecular dynamics 265
Hydrostatic strain enhancement in laterally confined SiGe nanostripes 264
Spontaneous Ge island ordering promoted by partial silicon capping 263
Self-ordering of a Ge island single layer induced by Si overgrowth 261
Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy 261
Accelerating simulations of strained-film growth by deep learning: Finite element method accuracy over long time scales 260
Dislocation engineering in SiGe heteroepitaxial films on patterned Si (001) substrates 260
Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source 260
Assessing the composition of hetero-epitaxial islands via morphological analysis: an analytical model matching GeSi/Si(001) data 259
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si 258
Vertical and lateral ordering of Ge islands grown on Si(001): Theory and experiments 255
Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires 255
Accurate and analytical strain mapping at the surface of Ge/Si(001) islands by an improved flat-island approximation 253
Thermal-hydrogen promoted selective desorption and enhanced mobility of adsorbed radicals in silicon film growth 252
Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments 252
Collective Shape Oscillations of SiGe Islands on Pit-Patterned Si(001) Substrates: A Coherent-Growth Strategy Enabled by Self-Regulated Intermixing 251
Phenomenological model of nanocrystalline silicon film formation by plasma-enhanced chemical vapor deposition 250
Controlling the relaxation mechanism of low strain Si1- x Gex /Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source 250
In-Plane Nanowire Growth of Topological Crystalline Insulator Pb₁₋ₓSnₓTe 250
Dynamics of pit filling in heteroepitaxy via phase-field simulations 249
Key role of the wetting layer in revealing the hidden path of Ge/Si(001) Stranski-Krastanow growth onset 247
Simulations of strained films evolution: extending accessible timescales through Convolutional Neural Networks 244
How pit facet inclination drives heteroepitaxial island positioning on patterned substrates 243
Monolithic Growth of Ultrathin Ge Nanowires on Si(001) 243
3D heteroepitaxy on patterned Si substrates: a new monolithic integration strategy 243
Simulating morphological evolutions by Convolutional Neural Networks 241
Si/Ge exchange mechanisms at the Ge(105) surface 239
Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling 239
Self-assembled GaAs islands on Si by droplet epitaxy 238
Local Uniaxial Tensile Deformation of Germanium up to the 4% Threshold by Epitaxial Nanostructures. 238
Detailed Analysis of the Shape-dependent Deformation Field in 3D Ge Islands 237
Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates 237
Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data 235
Binding sites for SiH2/Si(001): A combined ab initio, tight-binding, and classical investigation 235
Modelling the kinetic growth mode of GaAs nanomembranes 235
Phase-field modeling of the morphological evolution of ringlike structures during growth: Thermodynamics, kinetics, and template effects 235
Strained MOSFETs on ordered SiGe dots 234
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 234
Formation of Ge Nanoripples on Vicinal Si (1110): From Stranski-Krastanow Seeds to a Perfectly Faceted Wetting Layer 233
Ab initio results for the adiabatic atom-surface interaction for helium and neon on a simple metal 233
Continuum modeling of heteroepitaxial growth in semiconductors 233
Cell cycle effects of gemcitabine 232
Misfit dislocation gettering by substrate pit-patterning in SiGe films on Si(001) 232
Unexpected dominance of vertical dislocations in high-misfit ge/si(001) films and their elimination by deep substrate patterning 232
Anomalous Smoothing Preceding Island Formation During Growth on Patterned Substrates 228
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 228
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 228
Atomic-scale insights on the formation of ordered arrays of edge dislocations in Ge/Si(001) films via molecular dynamics simulations 228
Quantitative analysis of the prediction performance of a Convolutional Neural Network evaluating the surface elastic energy of a strained film 227
Atomic-scale pathway of the pyramid-to-dome transition during Ge growth on Si(001) 225
Continuum Modeling of cyclic growth in Ge/Si(001) heteroepitaxy 225
Self-organized evolution of Ge/Si(001) into intersecting bundles of horizontal nanowires during annealing 221
Misfit-Dislocation Distributions in Heteroepitaxy: From Mesoscale Measurements to Individual Defects and Back 221
Intermixing in heteroepitaxial islands: fast, self-consistent calculation of the concentration profile minimizing the elastic energy 219
A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD 219
Anisotropic extended misfit dislocations in overcritical SiGe films by local substrate patterning 218
Machine learning potential for interacting dislocations in the presence of free surfaces 218
Temperature-dependent evolution of the wetting layer thickness during Ge deposition on Si(001) 217
Simulations of strained films evolution: extending accessible timescales through Convolutional Neural Networks 216
Relaxed SiGe heteroepitaxy on Si with very thin buffer layers: experimental LEPECVD indications and an interpretation based on strain- dependent dislocation nature 216
Phase‐Field modeling of semiconductor heteroepitaxy: elastic relaxation, surface energy minimization and intermixing 216
Totale 27.456
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Categoria #
all - tutte 158.167
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 158.167
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021972 0 0 0 0 0 0 0 0 0 0 270 702
2021/20223.740 263 337 535 378 217 280 221 206 188 311 277 527
2022/20235.121 575 1.451 559 555 324 720 60 236 343 57 139 102
2023/20243.066 103 163 129 117 459 716 549 140 236 47 67 340
2024/20258.042 386 963 417 371 640 337 337 407 808 1.091 697 1.588
2025/202615.948 1.547 1.203 1.619 1.397 2.071 997 2.823 975 1.669 1.520 127 0
Totale 50.917