Car-Parrinello simulations and static density-functional theory calculations reveal how hydrogen promotes growth of epitaxial, ordered Si films in plasma-enhanced chemical vapor deposition at low-temperature conditions where the exposed Si(001)-(2×1) surface is fully hydrogenated. Thermal H atoms, indeed, are shown to selectively etch adsorbed silyl back to the gas phase or to form adsorbed species which can be easily incorporated into the crystal down to T∼200°C and start diffusing around T∼300°C. Our results are well consistent with earlier experiments. © 2008 The American Physical Society.
Cereda, S., Zipoli, F., Bernasconi, M., Miglio, L., & Montalenti, F. (2008). Thermal-hydrogen promoted selective desorption and enhanced mobility of adsorbed radicals in silicon film growth. PHYSICAL REVIEW LETTERS, 100, 046105 [10.1103/PhysRevLett.100.046105].
Citazione: | Cereda, S., Zipoli, F., Bernasconi, M., Miglio, L., & Montalenti, F. (2008). Thermal-hydrogen promoted selective desorption and enhanced mobility of adsorbed radicals in silicon film growth. PHYSICAL REVIEW LETTERS, 100, 046105 [10.1103/PhysRevLett.100.046105]. | |
Tipo: | Articolo in rivista - Articolo scientifico | |
Carattere della pubblicazione: | Scientifica | |
Titolo: | Thermal-hydrogen promoted selective desorption and enhanced mobility of adsorbed radicals in silicon film growth | |
Autori: | Cereda, S; Zipoli, F; Bernasconi, M; Miglio, L; Montalenti, F | |
Autori: | ||
Data di pubblicazione: | feb-2008 | |
Lingua: | English | |
Rivista: | PHYSICAL REVIEW LETTERS | |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1103/PhysRevLett.100.046105 | |
Appare nelle tipologie: | 01 - Articolo su rivista |
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