Car-Parrinello simulations and static density-functional theory calculations reveal how hydrogen promotes growth of epitaxial, ordered Si films in plasma-enhanced chemical vapor deposition at low-temperature conditions where the exposed Si(001)-(2×1) surface is fully hydrogenated. Thermal H atoms, indeed, are shown to selectively etch adsorbed silyl back to the gas phase or to form adsorbed species which can be easily incorporated into the crystal down to T∼200°C and start diffusing around T∼300°C. Our results are well consistent with earlier experiments. © 2008 The American Physical Society.

Cereda, S., Zipoli, F., Bernasconi, M., Miglio, L., Montalenti, F. (2008). Thermal-hydrogen promoted selective desorption and enhanced mobility of adsorbed radicals in silicon film growth. PHYSICAL REVIEW LETTERS, 100, 046105 [10.1103/PhysRevLett.100.046105].

Thermal-hydrogen promoted selective desorption and enhanced mobility of adsorbed radicals in silicon film growth

BERNASCONI, MARCO;MIGLIO, LEONIDA;MONTALENTI, FRANCESCO CIMBRO MATTIA
2008

Abstract

Car-Parrinello simulations and static density-functional theory calculations reveal how hydrogen promotes growth of epitaxial, ordered Si films in plasma-enhanced chemical vapor deposition at low-temperature conditions where the exposed Si(001)-(2×1) surface is fully hydrogenated. Thermal H atoms, indeed, are shown to selectively etch adsorbed silyl back to the gas phase or to form adsorbed species which can be easily incorporated into the crystal down to T∼200°C and start diffusing around T∼300°C. Our results are well consistent with earlier experiments. © 2008 The American Physical Society.
Articolo in rivista - Articolo scientifico
Car Parrinello, CVD
English
046105
Cereda, S., Zipoli, F., Bernasconi, M., Miglio, L., Montalenti, F. (2008). Thermal-hydrogen promoted selective desorption and enhanced mobility of adsorbed radicals in silicon film growth. PHYSICAL REVIEW LETTERS, 100, 046105 [10.1103/PhysRevLett.100.046105].
Cereda, S; Zipoli, F; Bernasconi, M; Miglio, L; Montalenti, F
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/2689
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