Molecular dynamics simulations with the Tersoff potential of the strain distribution around 60degrees misfit dislocation in a heteroepitaxial SiGe film confirm that highly compressed and expanded, cylindrical nanometer-sized regions appear on opposite sides of the (111) glide plane. Such a configuration is suggested to generate opposite chemical potential gradients for Si and Ge diffusion and, as verified by a Monte Carlo simulation, in the formation of Si-rich and Ge-rich nanowires along the dislocation core. This model is supported by photoluminescence measurements as a function of annealing temperature and time. (C) 2004 American Institute of Physics.

Martinelli, L., Marzegalli, A., Raiteri, P., Bollani, M., Montalenti, F., Miglio, L., et al. (2004). Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data. APPLIED PHYSICS LETTERS, 84(15), 2895-2897 [10.1063/1.1705727].

Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data

MARZEGALLI, ANNA;MONTALENTI, FRANCESCO CIMBRO MATTIA;MIGLIO, LEONIDA;
2004

Abstract

Molecular dynamics simulations with the Tersoff potential of the strain distribution around 60degrees misfit dislocation in a heteroepitaxial SiGe film confirm that highly compressed and expanded, cylindrical nanometer-sized regions appear on opposite sides of the (111) glide plane. Such a configuration is suggested to generate opposite chemical potential gradients for Si and Ge diffusion and, as verified by a Monte Carlo simulation, in the formation of Si-rich and Ge-rich nanowires along the dislocation core. This model is supported by photoluminescence measurements as a function of annealing temperature and time. (C) 2004 American Institute of Physics.
Articolo in rivista - Articolo scientifico
Dislocations, heteroepitaxy
English
apr-2004
84
15
2895
2897
none
Martinelli, L., Marzegalli, A., Raiteri, P., Bollani, M., Montalenti, F., Miglio, L., et al. (2004). Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data. APPLIED PHYSICS LETTERS, 84(15), 2895-2897 [10.1063/1.1705727].
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/2695
Citazioni
  • Scopus 12
  • ???jsp.display-item.citation.isi??? 14
Social impact