| Nome |
# |
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Ab initio study of the diffusion and decomposition pathways of SiHx species on Si(100), file e39773b1-617f-35a3-e053-3a05fe0aac26
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378
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Key role of the wetting layer in revealing the hidden path of Ge/Si(001) Stranski-Krastanow growth onset, file e39773b1-5967-35a3-e053-3a05fe0aac26
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370
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Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment, file e39773b5-0e31-35a3-e053-3a05fe0aac26
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306
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Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials, file e39773b7-8ba2-35a3-e053-3a05fe0aac26
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277
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Delayed plastic relaxation on patterned Si substrates: Coherent SiGe pyramids with dominant {111} facets, file e39773b1-5d61-35a3-e053-3a05fe0aac26
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247
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Fast isotropic adatom diffusion on Ge(105) dot facets, file e39773b1-5966-35a3-e053-3a05fe0aac26
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238
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Thermal-hydrogen promoted selective desorption and enhanced mobility of adsorbed radicals in silicon film growth, file e39773b1-596b-35a3-e053-3a05fe0aac26
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229
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Collective Shape Oscillations of SiGe Islands on Pit-Patterned Si(001) Substrates: A Coherent-Growth Strategy Enabled by Self-Regulated Intermixing, file e39773b1-5e1d-35a3-e053-3a05fe0aac26
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215
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Atomic-scale pathway of the pyramid-to-dome transition during Ge growth on Si(001), file e39773b1-6180-35a3-e053-3a05fe0aac26
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197
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Nature and Shape of Stacking Faults in 3C-SiC by Molecular Dynamics Simulations, file e39773b7-72e5-35a3-e053-3a05fe0aac26
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190
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Si/Ge exchange mechanisms at the Ge(105) surface, file e39773b1-596a-35a3-e053-3a05fe0aac26
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178
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In-Plane Nanowire Growth of Topological Crystalline Insulator Pb₁₋ₓSnₓTe, file 530e0515-4b98-4b5c-a2f3-87742b50b8de
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172
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Atomic-scale modeling of next-layer nucleation and step flow at the Ge(105) rebonded-step surface., file e39773b1-5934-35a3-e053-3a05fe0aac26
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169
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Self-ordering of a Ge island single layer induced by Si overgrowth, file e39773b1-5969-35a3-e053-3a05fe0aac26
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166
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Critical shape and size for dislocation nucleation in si1-xGex islands on Si(001), file e39773b1-5936-35a3-e053-3a05fe0aac26
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156
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A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD, file e39773b6-d521-35a3-e053-3a05fe0aac26
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148
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The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach, file e39773b6-cb42-35a3-e053-3a05fe0aac26
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147
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Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars, file e39773b6-dd6b-35a3-e053-3a05fe0aac26
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135
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Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si, file e39773b7-3eae-35a3-e053-3a05fe0aac26
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130
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Enhanced Relaxation and Intermixing in Ge Islands Grown on Pit-Patterned Si(001) Substrates, file e39773b1-56eb-35a3-e053-3a05fe0aac26
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129
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Dislocation-free SiGe/Si heterostructures, file e39773b5-19ae-35a3-e053-3a05fe0aac26
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125
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Modeling the plastic relaxation onset in realistic SiGe islands on Si(001), file e39773b1-5968-35a3-e053-3a05fe0aac26
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110
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Growth and coalescence of 3c-sic on si(111) micro-pillars by a phase-field approach, file e39773b5-eedf-35a3-e053-3a05fe0aac26
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107
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Slip trace-induced terrace erosion, file e39773b6-f26a-35a3-e053-3a05fe0aac26
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99
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Aspect-ratio-dependent driving force for nonuniform alloying in Stranski-Krastanow islands, file e39773b1-5933-35a3-e053-3a05fe0aac26
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87
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Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations, file e39773b6-3e4f-35a3-e053-3a05fe0aac26
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84
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Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A, file e39773b6-5914-35a3-e053-3a05fe0aac26
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84
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Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study, file e39773b6-b3fa-35a3-e053-3a05fe0aac26
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83
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Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling, file e39773b8-1dc4-35a3-e053-3a05fe0aac26
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73
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Computational analysis of low-energy dislocation configurations in graded layers, file e39773b7-2081-35a3-e053-3a05fe0aac26
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67
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Continuum modelling of semiconductor heteroepitaxy: an applied perspective, file e39773b7-4271-35a3-e053-3a05fe0aac26
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62
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Faceting of Si and Ge crystals grown on deeply patterned Si substrates in the kinetic regime: phase-field modelling and experiments, file e39773b7-d438-35a3-e053-3a05fe0aac26
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58
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Faceting of equilibrium and metastable nanostructures: A phase-field model of surface diffusion tackling realistic shapes, file 688e69bb-a6e2-410f-a3a0-18ce5b89ca64
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55
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Morphological Evolution of Pit-Patterned Si(001) Substrates Driven by Surface-Energy Reduction, file e39773b7-9aa8-35a3-e053-3a05fe0aac26
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45
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Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting, file e39773b7-80b4-35a3-e053-3a05fe0aac26
|
40
|
|
InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires, file 4decc0cd-9768-423d-891b-a1bb227e2e3a
|
33
|
|
Accurate generation of stochastic dynamics based on multi-model generative adversarial networks, file 5ea4abf5-6e7f-4445-aad3-06042d010594
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23
|
|
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition, file c5c49d05-6ad2-4fe6-b4ef-70ae54c48423
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23
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Machine learning potential for interacting dislocations in the presence of free surfaces, file e39773b8-d597-35a3-e053-3a05fe0aac26
|
22
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|
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film, file a16f5cec-1faa-40e8-9811-2fe4afe6efa1
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21
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Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns, file b4432111-52e1-40e9-9108-4973334cfc7c
|
20
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Atomic-scale insights on the formation of ordered arrays of edge dislocations in Ge/Si(001) films via molecular dynamics simulations, file e39773b9-20e9-35a3-e053-3a05fe0aac26
|
20
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|
Dynamics of pit filling in heteroepitaxy via phase-field simulations, file 9eb6425a-c648-436f-9e63-b56a9018ebec
|
17
|
|
Continuum modelling of semiconductor heteroepitaxy: an applied perspective, file e39773b7-94d8-35a3-e053-3a05fe0aac26
|
16
|
|
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach, file e39773b6-968e-35a3-e053-3a05fe0aac26
|
9
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|
Dynamics of pit filling in heteroepitaxy via phase-field simulations, file 3e00c958-302b-4e62-9306-e8fb06553d96
|
7
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|
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments, file e39773b6-b5fe-35a3-e053-3a05fe0aac26
|
7
|
|
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments, file e39773b5-d137-35a3-e053-3a05fe0aac26
|
6
|
|
Accurate generation of stochastic dynamics based on multi-model generative adversarial networks, file 68d5dcdd-5e0a-433a-96ba-200056a781e0
|
2
|
|
Faceting of equilibrium and metastable nanostructures: A phase-field model of surface diffusion tackling realistic shapes, file af51dc37-3f98-4c7d-8c6f-d732d7b5767e
|
2
|
|
Modeling the competition between elastic and plastic relaxation in semiconductor heteroepitaxy: From cyclic growth to flat films, file e39773b6-de03-35a3-e053-3a05fe0aac26
|
2
|
|
Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures, file e39773b7-562e-35a3-e053-3a05fe0aac26
|
2
|
|
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars, file e39773b8-4bbe-35a3-e053-3a05fe0aac26
|
2
|
|
Misfit-Dislocation Distributions in Heteroepitaxy: From Mesoscale Measurements to Individual Defects and Back, file e39773b5-3109-35a3-e053-3a05fe0aac26
|
1
|
|
Anisotropic extended misfit dislocations in overcritical SiGe films by local substrate patterning, file e39773b7-9f38-35a3-e053-3a05fe0aac26
|
1
|
| Totale |
5.592 |
