A joint theoretical and experimental analysis of the crystalline fraction in nanocrystalline films grown by low-energy plasma enhanced chemical vapor deposition is presented. The effect of key growth parameters such as temperature, silane flux, and hydrogen dilution ratio is analyzed and modeled at the atomic scale, introducing an environment-dependent crystallization probability. A very good agreement between experiments and theory is found, despite the use of a single fitting parameter. © 2009 American Institute of Physics.
Novikov, P., LE DONNE, A., Cereda, S., Miglio, L., Pizzini, S., Binetti, S., et al. (2009). Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments. APPLIED PHYSICS LETTERS, 94(5), 051904 [10.1063/1.3077187].
Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments
LE DONNE, ALESSIA;MIGLIO, LEONIDA;Pizzini, S;BINETTI, SIMONA OLGA;MONTALENTI, FRANCESCO CIMBRO MATTIA
2009
Abstract
A joint theoretical and experimental analysis of the crystalline fraction in nanocrystalline films grown by low-energy plasma enhanced chemical vapor deposition is presented. The effect of key growth parameters such as temperature, silane flux, and hydrogen dilution ratio is analyzed and modeled at the atomic scale, introducing an environment-dependent crystallization probability. A very good agreement between experiments and theory is found, despite the use of a single fitting parameter. © 2009 American Institute of Physics.
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