PIZZINI, SERGIO
PIZZINI, SERGIO
Reversible and Irreversible Voltage Manipulation of Interfacial Magnetic Anisotropy in Pt / Co /Oxide Multilayers
2020 Fassatoui, A; Garcia, J; Ranno, L; Vogel, J; Bernand-Mantel, A; Bea, H; Pizzini, S; Pizzini, S
Group IV Semiconductors Materials Research: Growth, Characterization and Applications to Electronics and Spintronics
2016 Kissinger, G; Pizzini, S; Miglio, L; Yamada-Kaneta, H; Yang, D
Phenomenological model of nanocrystalline silicon film formation by plasma-enhanced chemical vapor deposition
2009 Novikov, P; LE DONNE, A; Cereda, S; Miglio, L; Pizzini, S; Binetti, S; Rondanini, M; Cavallotti, C; Chrastina, D; Moiseev, T; Känel, H; Isella, G; Montalenti, F
Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments
2009 Novikov, P; LE DONNE, A; Cereda, S; Miglio, L; Pizzini, S; Binetti, S; Rondanini, M; Cavallotti, C; Chrastina, D; Moiseev, T; von Kaenel, H; Isella, G; Montalenti, F
Tuning by means of laser annealing of electronic and structural properties of nc–Si/a–Si:H
2009 Poliani, E; Somaschini, C; Sanguinetti, S; Grilli, E; Guzzi, M; LE DONNE, A; Binetti, S; Pizzini, S; Chrastina, D; Isella, G
Structural characterization of nc-Si films grown by low-energy PECVD on different substrates
2008 LE DONNE, A; Binetti, S; Isella, G; Pichaud, B; Texier, M; Acciarri, M; Pizzini, S
Structural homogeneity of nc-Si films grown by LEPECVD
2008 LE DONNE, A; Binetti, S; Pizzini, S; Isella, G
Diffusion length and junction spectroscopy analysis of low-temperature annealing of electron irradiation-induced deep levels in 4H-SiC
2006 Castaldini, A; Cavallini, A; Rigutti, L; Pizzini, S; LE DONNE, A; Binetti, S
Photovoltaic quantum efficiency enhancement by light harvesting of organo-lanthanide complexes
2006 Marchionna, S; Meinardi, F; Acciarri, M; Papagni, A; Binetti, S; Pizzini, S; Malatesta, V; Tubino, R
Defect studies on silicon and silicon–germanium for PV and optoelectronic applications
2006 Pizzini, S; Acciarri, M; Binetti, S; LE DONNE, A; Marchionna, S; Bollani, M
Nanocrystalline silicon films as multifunctional material for optoelectronic and photovoltaic applications
2006 Pizzini, S; Acciarri, M; Binetti, S; Cavalcoli, D; Cavallini, A; Chrastina, D; Colombo, L; Grilli, E; Isella, G; Lancin, M; LE DONNE, A; Mattoni, A; Peter, K; Pichuad, B; Poliani, E; Rossi, M; Sanguinetti, S; Textier, M; von Kanel, H
Optical properties of shuffle dislocations in silicon
2006 Pizzini, S; Binetti, S; LE DONNE, A; Marzegalli, A; Rabier, J
Electrical and optical characterization of electron- irradiated 4H-SiC epitaxial layer annealed at low temperature
2005 LE DONNE, A; Binetti, S; Pizzini, S
Nanocrystalline silicon films grown by low energy plasma enhanced chemical vapor deposition for optoelectronic applications
2005 Binetti, S; Acciarri, M; Bollani, M; Fumagalli, L; von Kanel, H; Pizzini, S
Nanocrystalline silicon film grown by LEPECVD for photovoltaic applications
2005 Acciarri, M; Binetti, S; Bollani, M; Fumagalli, L; Pizzini, S; von Kanel, H
Electronic transitions at defect states in Cz p-type silicon
2005 Castaldini, A; Cavalcoli, D; Cavallini, A; Binetti, S; Pizzini, S
Electric-dipole spin-resonance signals related to extended interstitial agglomerates in silicon
2005 Mchedlidze, T; Binetti, S; LE DONNE, A; Pizzini, S; Suezawa, M
The origin of photoluminescence from oxygen precipitates nucleated at low temperature in semiconductor silicon
2004 Leoni, E; Martinelli, L; Binetti, S; Borionetti, G; Pizzini, S; Acciarri, M
Electrical characterization of electron irradiated X rays detectors based on 4H-SiC epitaxial layers
2004 LE DONNE, A; Binetti, S; Acciarri, M; Pizzini, S
Luminescence of Dislocations and Oxide Precipitates in Si
2004 Pizzini, S; Leoni, E; Binetti, S; Acciarri, M; LE DONNE, A; Pichaud, B