In this work, we report and discuss the results of minority carriers diffusion length measurements carried out in order to quantify the radiation damage induced by electron irradiation of X-rays detectors based on a metal–silicon carbide junction.The devices examined consisted of 4H-SiC n-type epitaxial layers on 4H-SiC nq-type substrate wafers, on which Schottky contacts were formed by gold deposition.The minority carriers diffusion length, extracted from the results of photocurrent measurements using a fitting procedure, was shown to exhibit a strong decrease with the radiation dose

LE DONNE, A., Binetti, S., Acciarri, M., Pizzini, S. (2004). Electrical characterization of electron irradiated X rays detectors based on 4H-SiC epitaxial layers. DIAMOND AND RELATED MATERIALS, 13, 414-418 [10.1016/j.diamond.2003.11.079].

Electrical characterization of electron irradiated X rays detectors based on 4H-SiC epitaxial layers

LE DONNE, ALESSIA;BINETTI, SIMONA OLGA;ACCIARRI, MAURIZIO FILIPPO;Pizzini, S.
2004

Abstract

In this work, we report and discuss the results of minority carriers diffusion length measurements carried out in order to quantify the radiation damage induced by electron irradiation of X-rays detectors based on a metal–silicon carbide junction.The devices examined consisted of 4H-SiC n-type epitaxial layers on 4H-SiC nq-type substrate wafers, on which Schottky contacts were formed by gold deposition.The minority carriers diffusion length, extracted from the results of photocurrent measurements using a fitting procedure, was shown to exhibit a strong decrease with the radiation dose
Articolo in rivista - Articolo scientifico
silicon carbide
English
414
418
LE DONNE, A., Binetti, S., Acciarri, M., Pizzini, S. (2004). Electrical characterization of electron irradiated X rays detectors based on 4H-SiC epitaxial layers. DIAMOND AND RELATED MATERIALS, 13, 414-418 [10.1016/j.diamond.2003.11.079].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/14927
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