The knowledge and control of the structural details (texture, crystallite environment and size) of nanocrystalline silicon films is a prerequisite for their proper application in various technological fields. To this purpose, nanocrystalline silicon films grown by low energy plasma enhanced chemical vapour deposition (LEPECVD) on different kinds of substrates were submitted to a systematic characterization using Raman spectroscopy, X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). The results showed how the difference in substrate morphology is responsible for a deep difference in the film structural properties, particularly in the case of high silane dilutions
LE DONNE, A., Binetti, S., Isella, G., Pichaud, B., Texier, M., Acciarri, M., et al. (2008). Structural characterization of nc-Si films grown by low-energy PECVD on different substrates. APPLIED SURFACE SCIENCE, 254(9), 2804-2808 [10.1016/j.apsusc.2007.10.025].
Structural characterization of nc-Si films grown by low-energy PECVD on different substrates
LE DONNE, ALESSIA;BINETTI, SIMONA OLGA;ACCIARRI, MAURIZIO FILIPPO;PIZZINI, SERGIO
2008-02-28
Abstract
The knowledge and control of the structural details (texture, crystallite environment and size) of nanocrystalline silicon films is a prerequisite for their proper application in various technological fields. To this purpose, nanocrystalline silicon films grown by low energy plasma enhanced chemical vapour deposition (LEPECVD) on different kinds of substrates were submitted to a systematic characterization using Raman spectroscopy, X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). The results showed how the difference in substrate morphology is responsible for a deep difference in the film structural properties, particularly in the case of high silane dilutions
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