Nanocrystalline silicon is considered one of the most promising materials for thin-film solar cells. For such an application, one of the critical issues yet unsolved is to obtain a good structural uniformity along the film growth direction to yield high fill factors and open-circuit voltages. In this article, Raman spectroscopy was used to obtain crystallinity in-depth profiles of samples grown at a high growth rate by low-energy plasma-enhanced chemical vapor deposition PECVD using different SiH4 and H2 fluxes, all yielding the same dilution factor. The results showed that the total flow rate strongly affects the structural uniformity of nanocrystalline silicon films.
LE DONNE, A., Binetti, S., Pizzini, S., Isella, G. (2008). Structural homogeneity of nc-Si films grown by LEPECVD. ELECTROCHEMICAL AND SOLID-STATE LETTERS, 11(6), P5-P7 [10.1149/1.2894906].
Structural homogeneity of nc-Si films grown by LEPECVD
LE DONNE, ALESSIA;BINETTI, SIMONA OLGA;Pizzini, S;
2008
Abstract
Nanocrystalline silicon is considered one of the most promising materials for thin-film solar cells. For such an application, one of the critical issues yet unsolved is to obtain a good structural uniformity along the film growth direction to yield high fill factors and open-circuit voltages. In this article, Raman spectroscopy was used to obtain crystallinity in-depth profiles of samples grown at a high growth rate by low-energy plasma-enhanced chemical vapor deposition PECVD using different SiH4 and H2 fluxes, all yielding the same dilution factor. The results showed that the total flow rate strongly affects the structural uniformity of nanocrystalline silicon films.
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