The radiative recombination processes in dislocated float zone silicon samples deformed under gigapascal stresses were studied by photoluminescence (PL) spectroscopy. The observed shuffle dislocations present a reconstructed core and their generation is accompanied by the introduction of point defects and point defect clusters, whose signature is evident in the PL spectra. A broad band around 1 eV is the only PL feature which could be directly related to shuffle dislocations and it is explained conjecturing strain field induced gap changes, as confirmed by molecular dynamics simulations. (c) 2006 American Institute of Physics.
Pizzini, S., Binetti, S., LE DONNE, A., Marzegalli, A., Rabier, J. (2006). Optical properties of shuffle dislocations in silicon. APPLIED PHYSICS LETTERS, 88(21), 211910 [10.1063/1.2206874].
Optical properties of shuffle dislocations in silicon
PIZZINI, SERGIO;BINETTI, SIMONA OLGA;LE DONNE, ALESSIA;MARZEGALLI, ANNA;
2006
Abstract
The radiative recombination processes in dislocated float zone silicon samples deformed under gigapascal stresses were studied by photoluminescence (PL) spectroscopy. The observed shuffle dislocations present a reconstructed core and their generation is accompanied by the introduction of point defects and point defect clusters, whose signature is evident in the PL spectra. A broad band around 1 eV is the only PL feature which could be directly related to shuffle dislocations and it is explained conjecturing strain field induced gap changes, as confirmed by molecular dynamics simulations. (c) 2006 American Institute of Physics.
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