In this work, we report and discuss the results of minority carriers diffusion length measurements carried out in order to quantify the radiation damage induced by electron irradiation of X-rays detectors based on a metal–silicon carbide junction.The devices examined consisted of 4H-SiC n-type epitaxial layers on 4H-SiC nq-type substrate wafers, on which Schottky contacts were formed by gold deposition.The minority carriers diffusion length, extracted from the results of photocurrent measurements using a fitting procedure, was shown to exhibit a strong decrease with the radiation dose.
Le Donne, A., Binetti, S., & Pizzini, S. (2005). Electrical and optical characterization of electron- irradiated 4H-SiC epitaxial layer annealed at low temperature. DIAMOND AND RELATED MATERIALS, 14, 1150 [10.1016/j.diamond.2004.10.020].
Citazione: | Le Donne, A., Binetti, S., & Pizzini, S. (2005). Electrical and optical characterization of electron- irradiated 4H-SiC epitaxial layer annealed at low temperature. DIAMOND AND RELATED MATERIALS, 14, 1150 [10.1016/j.diamond.2004.10.020]. | |
Tipo: | Articolo in rivista - Articolo scientifico | |
Carattere della pubblicazione: | Scientifica | |
Titolo: | Electrical and optical characterization of electron- irradiated 4H-SiC epitaxial layer annealed at low temperature | |
Autori: | Le Donne, A; Binetti, S; Pizzini, S | |
Autori: | ||
Data di pubblicazione: | 2005 | |
Lingua: | English | |
Rivista: | DIAMOND AND RELATED MATERIALS | |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1016/j.diamond.2004.10.020 | |
Appare nelle tipologie: | 01 - Articolo su rivista |