Bicocca Open Archive

Logo unimib boa
MIGLIO, LEONIDA
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 31.354
AS - Asia 14.923
EU - Europa 13.505
SA - Sud America 2.052
AF - Africa 232
OC - Oceania 35
Continente sconosciuto - Info sul continente non disponibili 14
Totale 62.115
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 30.694
SG - Singapore 5.769
CN - Cina 3.691
HK - Hong Kong 2.638
RU - Federazione Russa 2.232
DE - Germania 2.032
IT - Italia 2.020
SE - Svezia 1.895
BR - Brasile 1.630
UA - Ucraina 1.517
IE - Irlanda 1.400
VN - Vietnam 1.400
GB - Regno Unito 730
CA - Canada 515
FI - Finlandia 447
FR - Francia 313
IN - India 298
AT - Austria 200
KR - Corea 196
AR - Argentina 175
JP - Giappone 159
NL - Olanda 159
ES - Italia 152
ID - Indonesia 151
TR - Turchia 142
BD - Bangladesh 106
MX - Messico 101
ZA - Sudafrica 92
DK - Danimarca 85
IQ - Iraq 70
EC - Ecuador 67
CH - Svizzera 66
BE - Belgio 62
PL - Polonia 57
PK - Pakistan 54
CO - Colombia 46
MA - Marocco 41
CL - Cile 31
TW - Taiwan 31
VE - Venezuela 31
PY - Paraguay 29
AU - Australia 28
UZ - Uzbekistan 27
IL - Israele 23
LT - Lituania 22
SA - Arabia Saudita 22
UY - Uruguay 22
KE - Kenya 20
PE - Perù 19
GR - Grecia 17
CZ - Repubblica Ceca 16
DZ - Algeria 16
TN - Tunisia 16
AE - Emirati Arabi Uniti 14
AZ - Azerbaigian 13
IR - Iran 13
EU - Europa 12
NP - Nepal 12
EG - Egitto 11
HU - Ungheria 11
BG - Bulgaria 10
KG - Kirghizistan 9
KZ - Kazakistan 9
LV - Lettonia 9
MY - Malesia 8
PH - Filippine 8
PS - Palestinian Territory 8
RO - Romania 8
BY - Bielorussia 7
DO - Repubblica Dominicana 7
JM - Giamaica 7
JO - Giordania 7
LB - Libano 7
PT - Portogallo 7
AL - Albania 6
CR - Costa Rica 6
ET - Etiopia 6
GE - Georgia 6
NO - Norvegia 6
OM - Oman 6
PA - Panama 6
CI - Costa d'Avorio 5
NZ - Nuova Zelanda 5
TH - Thailandia 5
BH - Bahrain 4
HN - Honduras 4
LA - Repubblica Popolare Democratica del Laos 4
LU - Lussemburgo 4
NG - Nigeria 4
SN - Senegal 4
TT - Trinidad e Tobago 4
AO - Angola 3
BB - Barbados 3
LK - Sri Lanka 3
SY - Repubblica araba siriana 3
BA - Bosnia-Erzegovina 2
BO - Bolivia 2
BZ - Belize 2
EE - Estonia 2
GA - Gabon 2
Totale 62.076
Salva come PNG Salva come JPEG
Città #
Ann Arbor 5.649
Woodbridge 3.079
Singapore 2.898
Hong Kong 2.610
Fairfield 2.350
Houston 2.058
Ashburn 1.900
Jacksonville 1.598
Chandler 1.545
Frankfurt am Main 1.358
Dublin 1.357
Wilmington 1.015
Santa Clara 956
Seattle 913
Dearborn 816
Milan 763
Cambridge 758
Princeton 667
Beijing 644
New York 625
Dong Ket 410
Hefei 402
Nanjing 375
San Jose 375
Dallas 337
Los Angeles 309
Lachine 261
The Dalles 261
Altamura 260
Lawrence 245
Ho Chi Minh City 226
Shanghai 204
Moscow 195
Buffalo 189
Council Bluffs 176
Vienna 172
Seoul 169
San Diego 168
Guangzhou 159
São Paulo 142
Boardman 139
Helsinki 137
Hanoi 133
Nanchang 128
Chicago 127
Toronto 119
Andover 112
Shenyang 109
Jakarta 108
Hebei 86
Changsha 84
Jinan 76
Huizen 69
Falls Church 67
Tianjin 66
Jiaxing 65
Norwalk 61
Zhengzhou 60
London 54
Hangzhou 53
Brussels 49
Dresden 49
Phoenix 49
Ottawa 48
Tokyo 47
Brooklyn 45
Southend 43
Montreal 40
Mountain View 40
Rio de Janeiro 39
Johannesburg 37
Ningbo 36
Sacramento 36
Monza 35
Rome 35
Brasília 34
Munich 34
Redmond 34
Stockholm 32
Warsaw 32
Philadelphia 31
Pune 31
University Park 31
Kunming 29
Taizhou 29
Belo Horizonte 28
Dhaka 28
Miyamae Ku 28
Nuremberg 28
Boston 27
Salt Lake City 27
San Francisco 27
Baghdad 26
Kent 26
Lausanne 26
Columbus 25
Curitiba 25
Denver 25
Kocaeli 25
Turin 25
Totale 41.788
Salva come PNG Salva come JPEG
Nome #
Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study 421
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 404
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 396
Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling 393
Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates 379
In-plane selective area InSb–Al nanowire quantum networks 346
Band-gap modifications of beta-FeSi2 with lattice distortions corresponding to the epitaxial relationships on Si(111) 329
Optical properties of micron-sized crystals grown via 3D heteroepitaxy 329
GaAs epilayers grown on patterned (001) silicon substrates via suspended Ge layers 327
Sunburst pattern by kinetic segregation in core-shell nanowires: A phase-field study 327
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 316
Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations 313
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 306
Multiple stacking fault formation via the evolution of related dislocations by molecular dynamics simulations 303
Coordination-dependent tight-binding potentials for carbon-based materials 302
Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor 300
Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001) 300
Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001) 299
Photonic Properties of Self-Assembled Semiconductor Microstructures 297
Nature and Shape of Stacking Faults in 3C-SiC by Molecular Dynamics Simulations 297
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 294
Dislocation-free SiGe/Si heterostructures 292
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 289
Growth and coalescence of 3c-sic on si(111) micro-pillars by a phase-field approach 286
A Structural Characterization of GaAs MBE Grown on Si Pillars 284
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film 283
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment 281
"Divide et impera" in detector technology 280
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars 276
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 271
Hexagonal Diamond phase of Si and Ge by nanoindentation 267
Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations 264
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 263
Strain engineering in Ge/GeSn core/shell nanowires 260
Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations 257
Integration of MOSFETs with SiGe dots as stressor material 253
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation 250
Stability of shuffle and glide dislocation segments with increasing misfit in Ge/Si1-xGex(001) epitaxial layers 248
An exceptional thermal strain reduction in Ge suspended layer grown on Si by a tilting pillar architecture 246
Site-controlled natural GaAs(111) quantum dots fabricated on vertical GaAs/Ge microcrystals on deeply patterned Si(001) substrates 246
Photoluminescence study of the strain relaxation of GaAs crystals grown on deeply patterned Si substrates 245
Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates 245
Hybrid sputtering/evaporation deposition of Cu(In,Ga)Se 2 thin film solar cells 236
Assessing the composition of hetero-epitaxial islands via morphological analysis: an analytical model matching GeSi/Si(001) data 236
Localized surface optical phonons in a layered crystal - gase(001) 236
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 236
Spontaneous Ge island ordering promoted by partial silicon capping 234
Point defects and stacking faults in TiSi2 phases by tight binding molecular dynamics 234
3D heteroepitaxy of mismatched semiconductors on silicon 234
Vertical and lateral ordering of Ge islands grown on Si(001): Theory and experiments 233
Dispersion relations of surface phonons in LiF(001) and NaF(001) 233
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si 232
Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars 231
Dislocation engineering in SiGe heteroepitaxial films on patterned Si (001) substrates 230
Thermal-hydrogen promoted selective desorption and enhanced mobility of adsorbed radicals in silicon film growth 228
Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments 228
3C-SiC hetero-epitaxially grown on silicon compliance substrates and new 3C-SiC substrates for sustainable wide-band-gap power devices (CHALLENGE) 228
Accurate and analytical strain mapping at the surface of Ge/Si(001) islands by an improved flat-island approximation 227
Development of a hybrid sputtering/evaporation process for Cu(In,Ga)Se 2 thin film solar cells 226
Phenomenological model of nanocrystalline silicon film formation by plasma-enhanced chemical vapor deposition 226
Self-ordering of a Ge island single layer induced by Si overgrowth 225
Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays 225
Integration of InGaP/GaAs/Ge triple-junction solar cells on deeply patterned silicon substrates 224
Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data 223
Impact of misfit dislocation on wavefront distortion in Si/SiGe/Si optical waveguides 221
One-Dimensional to Three-Dimensional Ripple-to-Dome Transition for SiGe on Vicinal Si(1 1 10) 221
Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires 220
Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture 220
Monolithic Growth of Ultrathin Ge Nanowires on Si(001) 219
Microscopic environment of Fe in epitaxially stabilized c-FeSi 218
Dislocation recombination and surface passivation of Ge micro-crystals on Si 217
Collective Shape Oscillations of SiGe Islands on Pit-Patterned Si(001) Substrates: A Coherent-Growth Strategy Enabled by Self-Regulated Intermixing 217
In-Plane Nanowire Growth of Topological Crystalline Insulator Pb₁₋ₓSnₓTe 215
Strained MOSFETs on ordered SiGe dots 214
Perfect crystals grown from imperfect interfaces 213
Energy distribution in Ge islands on Si(001): A spectral and site-resolved analysis versus size and morphology 212
Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals 212
Key role of the wetting layer in revealing the hidden path of Ge/Si(001) Stranski-Krastanow growth onset 211
New evidence for the folding of surface phonon modes in quasimonatomic crystals from He time-of-flight measurements in NaF 211
Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling 211
Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/InxGa1-xP Core-Shell Nanowires 211
n-Channel MOSFETs Fabricated on SiGe Dots for Strain-Enhanced Mobility 211
Modelling the kinetic growth mode of GaAs nanomembranes 211
Binding sites for SiH2/Si(001): A combined ab initio, tight-binding, and classical investigation 210
Formation of Ge Nanoripples on Vicinal Si (1110): From Stranski-Krastanow Seeds to a Perfectly Faceted Wetting Layer 210
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 210
Sih and sioh electromodulation at si-sio2 interfaces in a multiple internal reflectance configuration 209
Monolithic integration of optical grade GaAs on Si (001) substrates deeply patterned at a micron scale 209
Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates 209
Continuum modeling of heteroepitaxial growth in semiconductors 209
2D versus 3D competition at the early stages of growth for Ge on Si(001) by molecular dynamics 208
Unexpected dominance of vertical dislocations in high-misfit ge/si(001) films and their elimination by deep substrate patterning 208
Electric-Field Effects on the Infrared-Absorption of H In A SiO2 Film 206
On the helium-alkali halide surface-potential - surface corrugation vs ionic size 206
Cu(In,Ga)Se2 hybrid sputtering/evaporation deposition for thin film solar cells application 205
X-ray diffraction on stacking faults in 3C-SiC epitaxial microcrystals grown on patterned Si(0 0 1) wafers 205
How pit facet inclination drives heteroepitaxial island positioning on patterned substrates 204
Misfit dislocation gettering by substrate pit-patterning in SiGe films on Si(001) 204
Prediction of a very hard triclinic form of diamond 204
The role of ionic quadrupolar deformation in atom surface-potential 204
Totale 25.234
Salva come PNG Salva come JPEG
Categoria #
all - tutte 209.370
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 209.370
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20213.688 0 0 0 0 0 0 500 425 517 715 340 1.191
2021/20224.608 305 478 796 477 216 283 265 240 203 276 330 739
2022/20236.738 811 1.896 666 688 490 954 59 291 460 72 196 155
2023/20244.291 152 165 229 129 634 1.020 790 156 458 57 83 418
2024/202510.621 648 1.353 561 501 819 569 403 473 1.137 1.442 900 1.815
2025/202611.871 1.887 1.590 1.904 1.978 2.410 1.197 905 0 0 0 0 0
Totale 63.222