Bicocca Open Archive

Logo unimib boa
MIGLIO, LEONIDA
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 25.375
EU - Europa 10.023
AS - Asia 3.763
SA - Sud America 21
AF - Africa 20
OC - Oceania 19
Continente sconosciuto - Info sul continente non disponibili 13
Totale 39.234
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 24.941
SE - Svezia 1.861
CN - Cina 1.821
DE - Germania 1.809
IT - Italia 1.563
UA - Ucraina 1.447
IE - Irlanda 1.391
VN - Vietnam 784
HK - Hong Kong 692
GB - Regno Unito 594
CA - Canada 432
FI - Finlandia 371
FR - Francia 182
AT - Austria 170
IN - India 158
RU - Federazione Russa 147
NL - Olanda 124
TR - Turchia 111
ES - Italia 97
JP - Giappone 82
DK - Danimarca 78
BE - Belgio 60
CH - Svizzera 48
SG - Singapore 25
KR - Corea 20
PK - Pakistan 18
CZ - Repubblica Ceca 16
GR - Grecia 16
AU - Australia 15
PL - Polonia 15
TW - Taiwan 13
EU - Europa 12
BD - Bangladesh 10
BR - Brasile 10
IR - Iran 9
BG - Bulgaria 7
MA - Marocco 7
RO - Romania 6
HU - Ungheria 5
IL - Israele 5
CL - Cile 4
NO - Norvegia 4
NZ - Nuova Zelanda 4
AR - Argentina 3
CI - Costa d'Avorio 3
LU - Lussemburgo 3
UZ - Uzbekistan 3
BY - Bielorussia 2
CO - Colombia 2
EE - Estonia 2
LA - Repubblica Popolare Democratica del Laos 2
MU - Mauritius 2
NG - Nigeria 2
PH - Filippine 2
SA - Arabia Saudita 2
SC - Seychelles 2
TN - Tunisia 2
A2 - ???statistics.table.value.countryCode.A2??? 1
BN - Brunei Darussalam 1
BZ - Belize 1
EC - Ecuador 1
EG - Egitto 1
GW - Guinea-Bissau 1
HR - Croazia 1
LB - Libano 1
LK - Sri Lanka 1
LV - Lettonia 1
MK - Macedonia 1
MO - Macao, regione amministrativa speciale della Cina 1
MX - Messico 1
MY - Malesia 1
PE - Perù 1
PT - Portogallo 1
RS - Serbia 1
TH - Thailandia 1
Totale 39.234
Salva come PNG Salva come JPEG
Città #
Ann Arbor 5.649
Woodbridge 3.079
Fairfield 2.349
Houston 2.046
Jacksonville 1.592
Chandler 1.545
Dublin 1.350
Frankfurt am Main 1.317
Ashburn 1.127
Wilmington 1.010
Seattle 903
Dearborn 816
Cambridge 757
Hong Kong 673
Princeton 666
Milan 600
New York 569
Dong Ket 410
Nanjing 363
Lachine 261
Altamura 260
Beijing 253
Lawrence 245
San Diego 167
Vienna 158
Shanghai 148
Nanchang 128
Guangzhou 122
Andover 112
Boardman 108
Shenyang 105
Toronto 105
Helsinki 89
Hebei 86
Huizen 69
Falls Church 67
Jinan 67
Jiaxing 65
Changsha 63
Norwalk 61
Tianjin 59
Brussels 48
Ottawa 45
Zhengzhou 45
Dresden 43
Hangzhou 43
Southend 43
Los Angeles 40
Mountain View 40
London 35
Sacramento 35
Ningbo 34
Redmond 34
University Park 31
Kunming 28
Philadelphia 28
Hefei 27
Taizhou 27
Pune 26
Kocaeli 25
Monza 21
Turin 21
Fremont 20
Phoenix 20
Rome 19
Ardea 18
Lausanne 17
Paris 17
Umeda 17
Auburn Hills 16
Vigano San Martino 16
Chicago 15
San Mateo 15
Arcore 14
Grafing 14
Brescia 13
Lanzhou 13
Nürnberg 12
Amsterdam 11
Berlin 11
Dalmine 11
Malmö 11
Washington 11
Singapore 10
Tokyo 10
Eindhoven 9
Haikou 9
Islamabad 9
Kilburn 9
Taipei 9
Wuhan 9
Xian 9
Bologna 8
Edmonton 8
Fukushima 8
Fuzhou 8
Karlsruhe 8
Leawood 8
Marburg 8
Sant'ambrogio Di Torino 8
Totale 30.796
Salva come PNG Salva come JPEG
Nome #
Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study 324
Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling 308
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 304
Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates 288
In-plane selective area InSb–Al nanowire quantum networks 268
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 268
Sunburst pattern by kinetic segregation in core-shell nanowires: A phase-field study 259
Optical properties of micron-sized crystals grown via 3D heteroepitaxy 223
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 223
GaAs epilayers grown on patterned (001) silicon substrates via suspended Ge layers 221
Growth and coalescence of 3c-sic on si(111) micro-pillars by a phase-field approach 219
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 212
"Divide et impera" in detector technology 211
Dislocation-free SiGe/Si heterostructures 204
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 203
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 200
Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor 199
Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001) 197
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment 196
Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations 196
Multiple stacking fault formation via the evolution of related dislocations by molecular dynamics simulations 195
Strain engineering in Ge/GeSn core/shell nanowires 194
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film 191
A Structural Characterization of GaAs MBE Grown on Si Pillars 181
Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations 180
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 180
Stability of shuffle and glide dislocation segments with increasing misfit in Ge/Si1-xGex(001) epitaxial layers 180
Hybrid sputtering/evaporation deposition of Cu(In,Ga)Se2 thin film solar cells 176
Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations 176
Nature and Shape of Stacking Faults in 3C-SiC by Molecular Dynamics Simulations 176
Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001) 172
Integration of MOSFETs with SiGe dots as stressor material 172
Localized surface optical phonons in a layered crystal - gase(001) 171
3C-SiC hetero-epitaxially grown on silicon compliance substrates and new 3C-SiC substrates for sustainable wide-band-gap power devices (CHALLENGE) 167
3D heteroepitaxy of mismatched semiconductors on silicon 166
Vertical and lateral ordering of Ge islands grown on Si(001): Theory and experiments 165
Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling 164
Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays 163
Microscopic environment of Fe in epitaxially stabilized c-FeSi 162
Site-controlled natural GaAs(111) quantum dots fabricated on vertical GaAs/Ge microcrystals on deeply patterned Si(001) substrates 162
Point defects and stacking faults in TiSi2 phases by tight binding molecular dynamics 161
Dispersion relations of surface phonons in LiF(001) and NaF(001) 160
Surface energies and surface relaxation at TiSi2 competing phases 158
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars 157
Accurate and analytical strain mapping at the surface of Ge/Si(001) islands by an improved flat-island approximation 156
New evidence for the folding of surface phonon modes in quasimonatomic crystals from He time-of-flight measurements in NaF 156
Photoluminescence study of the strain relaxation of GaAs crystals grown on deeply patterned Si substrates 156
Spontaneous Ge island ordering promoted by partial silicon capping 155
Development of a hybrid sputtering/evaporation process for Cu(In,Ga)Se(2) thin film solar cells 155
2D versus 3D competition at the early stages of growth for Ge on Si(001) by molecular dynamics 154
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation 154
One-Dimensional to Three-Dimensional Ripple-to-Dome Transition for SiGe on Vicinal Si(1 1 10) 153
Assessing the composition of hetero-epitaxial islands via morphological analysis: an analytical model matching GeSi/Si(001) data 153
Electric-Field Effects on the Infrared-Absorption of H In A SiO2 Film 153
On the helium-alkali halide surface-potential - surface corrugation vs ionic size 152
Observation of surface optical phonons in naf(001) by inelastic he-atom scattering 152
Impact of misfit dislocation on wavefront distortion in Si/SiGe/Si optical waveguides 151
Sih and sioh electromodulation at si-sio2 interfaces in a multiple internal reflectance configuration 151
Energy distribution in Ge islands on Si(001): A spectral and site-resolved analysis versus size and morphology 150
Estimation of the critical radius for the nucleation of the c54 phase in c49 tisi2 role of the difference in density 150
Inelastic-Scattering of Helium From Bulk Longitudinal Acoustic Phonons in LiF(001) 149
Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture 149
Binding sites for SiH2/Si(001): A combined ab initio, tight-binding, and classical investigation 148
Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments 148
Dislocation engineering in SiGe heteroepitaxial films on patterned Si (001) substrates 148
The role of ionic quadrupolar deformation in atom surface-potential 148
Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates 148
Phenomenological model of nanocrystalline silicon film formation by plasma-enhanced chemical vapor deposition 147
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si 147
Perfect crystals grown from imperfect interfaces 147
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 147
Monolithic Growth of Ultrathin Ge Nanowires on Si(001) 145
Prediction of a very hard triclinic form of diamond 145
Surface green-function matching approach to the surface dynamics of ionic-crystals .1. equivalence with the invariant green-function method 145
Green's function calculation of surface phonons in ionic crystals 145
Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals 145
Study of surface phonons by means of the Green's Function Method 144
Monolithic integration of optical grade GaAs on Si (001) substrates deeply patterned at a micron scale 143
Space-filling Arrays of Three-Dimensional Epitaxial Ge and Si 1-xGe x Crystals 142
Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires 142
Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data 141
Thermal-hydrogen promoted selective desorption and enhanced mobility of adsorbed radicals in silicon film growth 140
Relaxed SiGe heteroepitaxy on Si with very thin buffer layers: experimental LEPECVD indications and an interpretation based on strain- dependent dislocation nature 140
New epitaxially stabilized cosi phase with the cscl structure 140
Twofold origin of strain-induced bending in core-shell nanowires: the GaP/InGaP case 139
Strained MOSFETs on ordered SiGe dots 138
Interplanar force-constants in gaas and ge - bond-charge-model vs abinitio calculations 138
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 138
An exceptional thermal strain reduction in Ge suspended layer grown on Si by a tilting pillar architecture 138
Stress, strain and elastic energy at nanometric Ge dots on Si(001) 137
Formation of Ge Nanoripples on Vicinal Si (1110): From Stranski-Krastanow Seeds to a Perfectly Faceted Wetting Layer 137
Kinetics of the C49-C54 transformation in patterned and blanket TiSi2 films: a comparison 137
Some remarks on the Green's function calculation of electronic states at solid surfaces 137
Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/InxGa1-xP Core-Shell Nanowires 137
Key role of the wetting layer in revealing the hidden path of Ge/Si(001) Stranski-Krastanow growth onset 136
surface phonon dynamics of 2h-tase2(001) 136
Unexpected dominance of vertical dislocations in high-misfit ge/si(001) films and their elimination by deep substrate patterning 136
Self-ordering of a Ge island single layer induced by Si overgrowth 135
Elastic and vibrational properties of pseudomorphic fesi films 135
Detailed Analysis of the Shape-dependent Deformation Field in 3D Ge Islands 135
Totale 16.975
Salva come PNG Salva come JPEG
Categoria #
all - tutte 112.699
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 112.699
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/20191.772 0 0 0 0 0 0 0 0 0 0 856 916
2019/20207.537 974 335 582 630 745 854 1.107 528 741 380 510 151
2020/20216.265 372 249 570 637 363 386 500 425 517 715 340 1.191
2021/20224.608 305 478 796 477 216 283 265 240 203 276 330 739
2022/20236.738 811 1.896 666 688 490 954 59 291 460 72 196 155
2023/20243.814 152 165 229 129 634 1.020 790 156 458 57 24 0
Totale 40.253