Bicocca Open Archive

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MIGLIO, LEONIDA
 Distribuzione geografica
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Continente #
NA - Nord America 27.354
EU - Europa 11.270
AS - Asia 5.393
SA - Sud America 22
AF - Africa 21
OC - Oceania 21
Continente sconosciuto - Info sul continente non disponibili 13
Totale 44.094
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Nazione #
US - Stati Uniti d'America 26.918
CN - Cina 1.908
SE - Svezia 1.862
DE - Germania 1.839
IT - Italia 1.726
UA - Ucraina 1.447
SG - Singapore 1.406
IE - Irlanda 1.393
RU - Federazione Russa 1.103
VN - Vietnam 784
HK - Hong Kong 696
GB - Regno Unito 601
CA - Canada 434
FI - Finlandia 411
FR - Francia 195
AT - Austria 175
IN - India 158
NL - Olanda 131
JP - Giappone 112
TR - Turchia 111
ES - Italia 109
ID - Indonesia 101
DK - Danimarca 83
BE - Belgio 61
CH - Svizzera 50
KR - Corea 25
PK - Pakistan 21
TW - Taiwan 19
AU - Australia 17
CZ - Repubblica Ceca 16
GR - Grecia 16
PL - Polonia 16
EU - Europa 12
IR - Iran 12
BR - Brasile 11
BD - Bangladesh 10
BG - Bulgaria 7
MA - Marocco 7
IL - Israele 6
RO - Romania 6
HU - Ungheria 5
SA - Arabia Saudita 5
CL - Cile 4
NO - Norvegia 4
NZ - Nuova Zelanda 4
AR - Argentina 3
CI - Costa d'Avorio 3
LK - Sri Lanka 3
LU - Lussemburgo 3
UZ - Uzbekistan 3
BY - Bielorussia 2
CO - Colombia 2
EE - Estonia 2
KZ - Kazakistan 2
LA - Repubblica Popolare Democratica del Laos 2
LT - Lituania 2
MU - Mauritius 2
NG - Nigeria 2
PH - Filippine 2
SC - Seychelles 2
TN - Tunisia 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AZ - Azerbaigian 1
BN - Brunei Darussalam 1
BZ - Belize 1
EC - Ecuador 1
EG - Egitto 1
GW - Guinea-Bissau 1
HR - Croazia 1
KW - Kuwait 1
LB - Libano 1
LV - Lettonia 1
MK - Macedonia 1
MO - Macao, regione amministrativa speciale della Cina 1
MX - Messico 1
MY - Malesia 1
PE - Perù 1
PT - Portogallo 1
RS - Serbia 1
TH - Thailandia 1
ZA - Sudafrica 1
Totale 44.094
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Città #
Ann Arbor 5.649
Woodbridge 3.079
Fairfield 2.349
Houston 2.046
Jacksonville 1.592
Chandler 1.545
Dublin 1.352
Frankfurt am Main 1.318
Singapore 1.222
Ashburn 1.193
Wilmington 1.010
Santa Clara 933
Seattle 903
Dearborn 816
Cambridge 757
Hong Kong 677
Princeton 666
Milan 647
New York 569
Dong Ket 410
Nanjing 363
Lachine 261
Altamura 260
Beijing 256
Lawrence 245
Shanghai 182
San Diego 167
Vienna 159
Boardman 135
Nanchang 128
Guangzhou 126
Helsinki 125
Andover 112
Toronto 106
Shenyang 105
Jakarta 101
Hebei 86
Huizen 69
Falls Church 67
Jinan 67
Jiaxing 65
Changsha 63
Norwalk 61
Tianjin 59
Brussels 48
Dresden 47
Zhengzhou 46
Ottawa 45
Hangzhou 44
Southend 43
Los Angeles 40
Mountain View 40
London 37
Sacramento 35
Ningbo 34
Redmond 34
Chicago 31
University Park 31
Dallas 30
Kunming 28
Miyamae Ku 28
Philadelphia 28
Taizhou 28
Hefei 27
Pune 26
Kocaeli 25
Phoenix 23
Turin 23
Monza 21
Paris 21
Fremont 20
Rome 19
Ardea 18
Columbus 18
Lausanne 17
Umeda 17
Auburn Hills 16
Berlin 16
Vigano San Martino 16
Brescia 15
San Mateo 15
Arcore 14
Grafing 14
Como 13
Falkenstein 13
Lanzhou 13
Nürnberg 12
Valladolid 12
Washington 12
Amsterdam 11
Dalmine 11
Malmö 11
Bologna 10
Taipei 10
Tokyo 10
Eindhoven 9
Fuzhou 9
Haikou 9
Islamabad 9
Kilburn 9
Totale 33.362
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Nome #
Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study 346
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 325
Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling 324
Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates 316
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 296
In-plane selective area InSb–Al nanowire quantum networks 292
Sunburst pattern by kinetic segregation in core-shell nanowires: A phase-field study 276
Optical properties of micron-sized crystals grown via 3D heteroepitaxy 249
GaAs epilayers grown on patterned (001) silicon substrates via suspended Ge layers 242
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 239
Growth and coalescence of 3c-sic on si(111) micro-pillars by a phase-field approach 235
"Divide et impera" in detector technology 230
Multiple stacking fault formation via the evolution of related dislocations by molecular dynamics simulations 223
Dislocation-free SiGe/Si heterostructures 222
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 222
Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001) 221
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 221
Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor 218
Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations 217
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film 215
Strain engineering in Ge/GeSn core/shell nanowires 213
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment 212
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 211
Nature and Shape of Stacking Faults in 3C-SiC by Molecular Dynamics Simulations 210
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 203
Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations 198
A Structural Characterization of GaAs MBE Grown on Si Pillars 197
Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations 196
Stability of shuffle and glide dislocation segments with increasing misfit in Ge/Si1-xGex(001) epitaxial layers 196
Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001) 194
Integration of MOSFETs with SiGe dots as stressor material 191
Localized surface optical phonons in a layered crystal - gase(001) 191
Hybrid sputtering/evaporation deposition of Cu(In,Ga)Se2 thin film solar cells 188
3C-SiC hetero-epitaxially grown on silicon compliance substrates and new 3C-SiC substrates for sustainable wide-band-gap power devices (CHALLENGE) 188
3D heteroepitaxy of mismatched semiconductors on silicon 187
Vertical and lateral ordering of Ge islands grown on Si(001): Theory and experiments 185
Point defects and stacking faults in TiSi2 phases by tight binding molecular dynamics 183
Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays 182
Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling 179
Phenomenological model of nanocrystalline silicon film formation by plasma-enhanced chemical vapor deposition 178
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars 177
Dispersion relations of surface phonons in LiF(001) and NaF(001) 177
Site-controlled natural GaAs(111) quantum dots fabricated on vertical GaAs/Ge microcrystals on deeply patterned Si(001) substrates 176
Development of a hybrid sputtering/evaporation process for Cu(In,Ga)Se(2) thin film solar cells 175
Assessing the composition of hetero-epitaxial islands via morphological analysis: an analytical model matching GeSi/Si(001) data 175
New evidence for the folding of surface phonon modes in quasimonatomic crystals from He time-of-flight measurements in NaF 174
Microscopic environment of Fe in epitaxially stabilized c-FeSi 174
Accurate and analytical strain mapping at the surface of Ge/Si(001) islands by an improved flat-island approximation 173
Photoluminescence study of the strain relaxation of GaAs crystals grown on deeply patterned Si substrates 173
Spontaneous Ge island ordering promoted by partial silicon capping 172
Electric-Field Effects on the Infrared-Absorption of H In A SiO2 Film 172
Surface energies and surface relaxation at TiSi2 competing phases 171
Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates 170
Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture 170
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation 170
Impact of misfit dislocation on wavefront distortion in Si/SiGe/Si optical waveguides 169
Estimation of the critical radius for the nucleation of the c54 phase in c49 tisi2 role of the difference in density 169
Observation of surface optical phonons in naf(001) by inelastic he-atom scattering 169
Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires 169
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 169
Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments 168
On the helium-alkali halide surface-potential - surface corrugation vs ionic size 168
The role of ionic quadrupolar deformation in atom surface-potential 167
Sih and sioh electromodulation at si-sio2 interfaces in a multiple internal reflectance configuration 167
Inelastic-Scattering of Helium From Bulk Longitudinal Acoustic Phonons in LiF(001) 167
Energy distribution in Ge islands on Si(001): A spectral and site-resolved analysis versus size and morphology 166
Dislocation engineering in SiGe heteroepitaxial films on patterned Si (001) substrates 165
2D versus 3D competition at the early stages of growth for Ge on Si(001) by molecular dynamics 164
Thermal-hydrogen promoted selective desorption and enhanced mobility of adsorbed radicals in silicon film growth 164
Green's function calculation of surface phonons in ionic crystals 164
Binding sites for SiH2/Si(001): A combined ab initio, tight-binding, and classical investigation 163
Surface green-function matching approach to the surface dynamics of ionic-crystals .1. equivalence with the invariant green-function method 163
One-Dimensional to Three-Dimensional Ripple-to-Dome Transition for SiGe on Vicinal Si(1 1 10) 162
Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data 160
Prediction of a very hard triclinic form of diamond 160
Some remarks on the Green's function calculation of electronic states at solid surfaces 160
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si 160
Relaxed SiGe heteroepitaxy on Si with very thin buffer layers: experimental LEPECVD indications and an interpretation based on strain- dependent dislocation nature 159
Study of surface phonons by means of the Green's Function Method 159
Strained MOSFETs on ordered SiGe dots 158
Kinetics of the C49-C54 transformation in patterned and blanket TiSi2 films: a comparison 158
Monolithic integration of optical grade GaAs on Si (001) substrates deeply patterned at a micron scale 158
New epitaxially stabilized cosi phase with the cscl structure 157
Unexpected dominance of vertical dislocations in high-misfit ge/si(001) films and their elimination by deep substrate patterning 157
An exceptional thermal strain reduction in Ge suspended layer grown on Si by a tilting pillar architecture 157
Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals 157
Self-ordering of a Ge island single layer induced by Si overgrowth 155
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 155
Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/InxGa1-xP Core-Shell Nanowires 155
Perfect crystals grown from imperfect interfaces 155
Interplanar force-constants in gaas and ge - bond-charge-model vs abinitio calculations 154
LATTICE-DYNAMICS OF THE SI(111) SURFACE - FOLDING EFFECTS IN THE 2X1 STRUCTURE 154
Collective Shape Oscillations of SiGe Islands on Pit-Patterned Si(001) Substrates: A Coherent-Growth Strategy Enabled by Self-Regulated Intermixing 154
Elastic and vibrational properties of pseudomorphic fesi films 153
Key role of the wetting layer in revealing the hidden path of Ge/Si(001) Stranski-Krastanow growth onset 153
Space-filling Arrays of Three-Dimensional Epitaxial Ge and Si 1-xGe x Crystals 153
Twofold origin of strain-induced bending in core-shell nanowires: the GaP/InGaP case 153
Modelling the kinetic growth mode of GaAs nanomembranes 153
Monolithic Growth of Ultrathin Ge Nanowires on Si(001) 152
Three dimensional heteroepitaxy: A new path for monolithically integrating mismatched materials with silicon 152
Totale 18.814
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Categoria #
all - tutte 146.806
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 146.806
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20204.271 0 0 0 0 0 854 1.107 528 741 380 510 151
2020/20216.265 372 249 570 637 363 386 500 425 517 715 340 1.191
2021/20224.608 305 478 796 477 216 283 265 240 203 276 330 739
2022/20236.738 811 1.896 666 688 490 954 59 291 460 72 196 155
2023/20244.291 152 165 229 129 634 1.020 790 156 458 57 83 418
2024/20254.410 648 1.353 561 501 819 528 0 0 0 0 0 0
Totale 45.140