Bicocca Open Archive

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MIGLIO, LEONIDA
 Distribuzione geografica
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Continente #
NA - Nord America 36.274
AS - Asia 18.775
EU - Europa 14.698
SA - Sud America 2.511
AF - Africa 433
OC - Oceania 40
Continente sconosciuto - Info sul continente non disponibili 17
Totale 72.748
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Nazione #
US - Stati Uniti d'America 33.948
SG - Singapore 6.902
CN - Cina 4.034
HK - Hong Kong 2.742
IT - Italia 2.529
VN - Vietnam 2.281
RU - Federazione Russa 2.264
CA - Canada 2.126
DE - Germania 2.081
SE - Svezia 1.895
BR - Brasile 1.866
UA - Ucraina 1.540
IE - Irlanda 1.405
GB - Regno Unito 788
FR - Francia 650
IN - India 560
FI - Finlandia 484
BD - Bangladesh 351
KR - Corea 325
TR - Turchia 247
AR - Argentina 236
AT - Austria 209
ID - Indonesia 195
IQ - Iraq 188
ES - Italia 180
JP - Giappone 179
NL - Olanda 173
PK - Pakistan 144
ZA - Sudafrica 132
MX - Messico 116
EC - Ecuador 102
SA - Arabia Saudita 94
CH - Svizzera 92
CO - Colombia 90
DK - Danimarca 85
PH - Filippine 85
BE - Belgio 68
MA - Marocco 67
PL - Polonia 65
VE - Venezuela 62
UZ - Uzbekistan 58
CL - Cile 50
PY - Paraguay 40
TW - Taiwan 39
KE - Kenya 36
MY - Malesia 35
AU - Australia 33
ET - Etiopia 30
JO - Giordania 30
TN - Tunisia 30
IL - Israele 28
UY - Uruguay 28
DZ - Algeria 27
NP - Nepal 26
PE - Perù 26
EG - Egitto 25
OM - Oman 25
AE - Emirati Arabi Uniti 23
AZ - Azerbaigian 23
LT - Lituania 23
GR - Grecia 21
CZ - Repubblica Ceca 20
TH - Thailandia 20
KZ - Kazakistan 18
PS - Palestinian Territory 18
HU - Ungheria 17
LB - Libano 17
JM - Giamaica 15
KG - Kirghizistan 14
IR - Iran 13
CR - Costa Rica 12
EU - Europa 12
GE - Georgia 12
LY - Libia 12
PT - Portogallo 12
SC - Seychelles 12
AL - Albania 11
BG - Bulgaria 11
AO - Angola 10
BY - Bielorussia 10
NI - Nicaragua 10
PA - Panama 10
SN - Senegal 10
BO - Bolivia 9
CI - Costa d'Avorio 9
DO - Repubblica Dominicana 9
LV - Lettonia 9
RO - Romania 9
RS - Serbia 9
HN - Honduras 8
NO - Norvegia 8
BH - Bahrain 7
MN - Mongolia 7
ME - Montenegro 6
NG - Nigeria 6
SY - Repubblica araba siriana 6
KW - Kuwait 5
LA - Repubblica Popolare Democratica del Laos 5
NZ - Nuova Zelanda 5
TT - Trinidad e Tobago 5
Totale 72.654
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Città #
Ann Arbor 5.649
Singapore 3.652
Woodbridge 3.080
Hong Kong 2.691
Fairfield 2.350
Ashburn 2.274
Houston 2.066
San Jose 1.744
Toronto 1.664
Jacksonville 1.601
Chandler 1.545
Frankfurt am Main 1.382
Dublin 1.362
Wilmington 1.016
Santa Clara 980
Seattle 915
Dearborn 816
Milan 804
Cambridge 761
New York 691
Beijing 668
Princeton 668
Chicago 480
Ho Chi Minh City 480
The Dalles 471
Dong Ket 410
Hefei 403
Los Angeles 403
Hanoi 376
Nanjing 376
Dallas 364
Lauterbourg 295
Seoul 291
Council Bluffs 261
Lachine 261
Altamura 260
Lawrence 245
Shanghai 214
Buffalo 202
Moscow 197
Vienna 180
San Diego 174
Helsinki 171
São Paulo 164
Guangzhou 162
Boardman 154
Nanchang 128
Jakarta 115
Andover 112
Shenyang 109
Changsha 87
Hebei 86
Jinan 76
Baghdad 71
Huizen 69
Falls Church 67
Tianjin 66
Jiaxing 65
Da Nang 63
Orem 63
London 62
Norwalk 62
Zhengzhou 62
Phoenix 60
Montreal 59
Tokyo 59
Haiphong 58
Ottawa 55
Hangzhou 54
Brussels 53
Dresden 52
Brooklyn 51
Johannesburg 50
Chennai 49
Rio de Janeiro 48
Rome 48
Dhaka 47
Philadelphia 46
Tashkent 45
Southend 43
Lahore 42
Mountain View 40
Pune 40
Mumbai 39
Brasília 38
Riyadh 38
New Delhi 37
Sacramento 37
San Francisco 37
Monza 36
Ningbo 36
Warsaw 36
Munich 35
Redmond 34
Washington 34
Curitiba 32
Guayaquil 32
Stockholm 32
Boston 31
Denver 31
Totale 48.330
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Nome #
Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study 452
Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling 444
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 443
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 428
Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates 418
In-plane selective area InSb–Al nanowire quantum networks 378
GaAs epilayers grown on patterned (001) silicon substrates via suspended Ge layers 372
Optical properties of micron-sized crystals grown via 3D heteroepitaxy 371
Sunburst pattern by kinetic segregation in core-shell nanowires: A phase-field study 365
Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations 361
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 359
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 355
Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor 354
Multiple stacking fault formation via the evolution of related dislocations by molecular dynamics simulations 348
Band-gap modifications of beta-FeSi2 with lattice distortions corresponding to the epitaxial relationships on Si(111) 347
Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001) 346
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 346
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 345
Nature and Shape of Stacking Faults in 3C-SiC by Molecular Dynamics Simulations 344
Coordination-dependent tight-binding potentials for carbon-based materials 332
Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001) 332
Photonic Properties of Self-Assembled Semiconductor Microstructures 330
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 326
Dislocation-free SiGe/Si heterostructures 326
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment 325
Growth and coalescence of 3c-sic on si(111) micro-pillars by a phase-field approach 324
A Structural Characterization of GaAs MBE Grown on Si Pillars 314
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars 313
"Divide et impera" in detector technology 310
Integration of MOSFETs with SiGe dots as stressor material 309
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film 305
Hexagonal Diamond phase of Si and Ge by nanoindentation 300
Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations 297
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 292
Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations 289
Strain engineering in Ge/GeSn core/shell nanowires 289
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 284
An exceptional thermal strain reduction in Ge suspended layer grown on Si by a tilting pillar architecture 282
Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates 281
Site-controlled natural GaAs(111) quantum dots fabricated on vertical GaAs/Ge microcrystals on deeply patterned Si(001) substrates 281
Stability of shuffle and glide dislocation segments with increasing misfit in Ge/Si1-xGex(001) epitaxial layers 281
Photoluminescence study of the strain relaxation of GaAs crystals grown on deeply patterned Si substrates 278
Hybrid sputtering/evaporation deposition of Cu(In,Ga)Se 2 thin film solar cells 273
Self-ordering of a Ge island single layer induced by Si overgrowth 272
Localized surface optical phonons in a layered crystal - gase(001) 270
Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars 270
Dislocation engineering in SiGe heteroepitaxial films on patterned Si (001) substrates 269
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation 269
Dislocation recombination and surface passivation of Ge micro-crystals on Si 268
Assessing the composition of hetero-epitaxial islands via morphological analysis: an analytical model matching GeSi/Si(001) data 267
Spontaneous Ge island ordering promoted by partial silicon capping 266
Development of a hybrid sputtering/evaporation process for Cu(In,Ga)Se 2 thin film solar cells 266
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si 264
Dispersion relations of surface phonons in LiF(001) and NaF(001) 263
Vertical and lateral ordering of Ge islands grown on Si(001): Theory and experiments 262
One-Dimensional to Three-Dimensional Ripple-to-Dome Transition for SiGe on Vicinal Si(1 1 10) 262
Integration of InGaP/GaAs/Ge triple-junction solar cells on deeply patterned silicon substrates 262
Accurate and analytical strain mapping at the surface of Ge/Si(001) islands by an improved flat-island approximation 261
Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments 261
Phenomenological model of nanocrystalline silicon film formation by plasma-enhanced chemical vapor deposition 261
3D heteroepitaxy of mismatched semiconductors on silicon 259
Collective Shape Oscillations of SiGe Islands on Pit-Patterned Si(001) Substrates: A Coherent-Growth Strategy Enabled by Self-Regulated Intermixing 259
Monolithic integration of optical grade GaAs on Si (001) substrates deeply patterned at a micron scale 258
Key role of the wetting layer in revealing the hidden path of Ge/Si(001) Stranski-Krastanow growth onset 256
Point defects and stacking faults in TiSi2 phases by tight binding molecular dynamics 254
In-Plane Nanowire Growth of Topological Crystalline Insulator Pb₁₋ₓSnₓTe 254
Thermal-hydrogen promoted selective desorption and enhanced mobility of adsorbed radicals in silicon film growth 253
Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays 253
3C-SiC hetero-epitaxially grown on silicon compliance substrates and new 3C-SiC substrates for sustainable wide-band-gap power devices (CHALLENGE) 252
How pit facet inclination drives heteroepitaxial island positioning on patterned substrates 251
3D heteroepitaxy on patterned Si substrates: a new monolithic integration strategy 251
Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires 251
Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture 251
Space-filling Arrays of Three-Dimensional Epitaxial Ge and Si 1-xGe x Crystals 247
Microscopic environment of Fe in epitaxially stabilized c-FeSi 247
Monolithic Growth of Ultrathin Ge Nanowires on Si(001) 246
Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates 246
Detailed Analysis of the Shape-dependent Deformation Field in 3D Ge Islands 245
Modelling the kinetic growth mode of GaAs nanomembranes 245
Perfect crystals grown from imperfect interfaces 245
Impact of misfit dislocation on wavefront distortion in Si/SiGe/Si optical waveguides 244
Strained MOSFETs on ordered SiGe dots 244
X-ray diffraction on stacking faults in 3C-SiC epitaxial microcrystals grown on patterned Si(0 0 1) wafers 244
Binding sites for SiH2/Si(001): A combined ab initio, tight-binding, and classical investigation 243
Misfit dislocation gettering by substrate pit-patterning in SiGe films on Si(001) 243
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 243
Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals 243
Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data 242
New evidence for the folding of surface phonon modes in quasimonatomic crystals from He time-of-flight measurements in NaF 242
Continuum modeling of heteroepitaxial growth in semiconductors 242
n-Channel MOSFETs Fabricated on SiGe Dots for Strain-Enhanced Mobility 242
Energy distribution in Ge islands on Si(001): A spectral and site-resolved analysis versus size and morphology 240
Formation of Ge Nanoripples on Vicinal Si (1110): From Stranski-Krastanow Seeds to a Perfectly Faceted Wetting Layer 240
Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/InxGa1-xP Core-Shell Nanowires 240
Unexpected dominance of vertical dislocations in high-misfit ge/si(001) films and their elimination by deep substrate patterning 239
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 239
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 238
Cu(In,Ga)Se2 hybrid sputtering/evaporation deposition for thin film solar cells application 237
On the helium-alkali halide surface-potential - surface corrugation vs ionic size 237
Three dimensional heteroepitaxy: A new path for monolithically integrating mismatched materials with silicon 236
Totale 28.803
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Categoria #
all - tutte 233.515
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 233.515
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.191 0 0 0 0 0 0 0 0 0 0 0 1.191
2021/20224.608 305 478 796 477 216 283 265 240 203 276 330 739
2022/20236.738 811 1.896 666 688 490 954 59 291 460 72 196 155
2023/20244.291 152 165 229 129 634 1.020 790 156 458 57 83 418
2024/202510.621 648 1.353 561 501 819 569 403 473 1.137 1.442 900 1.815
2025/202622.509 1.887 1.590 1.904 1.978 2.410 1.197 3.266 1.304 2.103 1.957 2.307 606
Totale 73.860