Bicocca Open Archive

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MIGLIO, LEONIDA
 Distribuzione geografica
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Continente #
NA - Nord America 31.025
AS - Asia 14.753
EU - Europa 13.490
SA - Sud America 2.018
AF - Africa 223
OC - Oceania 35
Continente sconosciuto - Info sul continente non disponibili 14
Totale 61.558
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Nazione #
US - Stati Uniti d'America 30.371
SG - Singapore 5.635
CN - Cina 3.688
HK - Hong Kong 2.624
RU - Federazione Russa 2.229
DE - Germania 2.032
IT - Italia 2.016
SE - Svezia 1.895
BR - Brasile 1.618
UA - Ucraina 1.516
IE - Irlanda 1.400
VN - Vietnam 1.394
GB - Regno Unito 725
CA - Canada 514
FI - Finlandia 447
FR - Francia 313
IN - India 297
AT - Austria 200
KR - Corea 196
AR - Argentina 166
JP - Giappone 159
NL - Olanda 158
ES - Italia 151
ID - Indonesia 151
TR - Turchia 142
BD - Bangladesh 103
MX - Messico 99
ZA - Sudafrica 92
DK - Danimarca 85
IQ - Iraq 70
CH - Svizzera 66
BE - Belgio 62
EC - Ecuador 61
PL - Polonia 57
PK - Pakistan 53
CO - Colombia 46
MA - Marocco 39
TW - Taiwan 31
PY - Paraguay 29
AU - Australia 28
CL - Cile 28
VE - Venezuela 28
UZ - Uzbekistan 26
IL - Israele 23
LT - Lituania 22
SA - Arabia Saudita 22
UY - Uruguay 21
KE - Kenya 19
PE - Perù 19
GR - Grecia 17
CZ - Repubblica Ceca 16
AE - Emirati Arabi Uniti 14
DZ - Algeria 14
TN - Tunisia 14
AZ - Azerbaigian 13
IR - Iran 13
EU - Europa 12
EG - Egitto 11
HU - Ungheria 11
BG - Bulgaria 10
NP - Nepal 10
KZ - Kazakistan 9
LV - Lettonia 9
KG - Kirghizistan 8
MY - Malesia 8
PS - Palestinian Territory 8
RO - Romania 8
BY - Bielorussia 7
JM - Giamaica 7
LB - Libano 7
PH - Filippine 7
PT - Portogallo 7
AL - Albania 6
CR - Costa Rica 6
DO - Repubblica Dominicana 6
ET - Etiopia 6
GE - Georgia 6
JO - Giordania 6
NO - Norvegia 6
CI - Costa d'Avorio 5
NZ - Nuova Zelanda 5
OM - Oman 5
PA - Panama 5
TH - Thailandia 5
BH - Bahrain 4
LA - Repubblica Popolare Democratica del Laos 4
LU - Lussemburgo 4
NG - Nigeria 4
SN - Senegal 4
TT - Trinidad e Tobago 4
BB - Barbados 3
HN - Honduras 3
LK - Sri Lanka 3
AO - Angola 2
BA - Bosnia-Erzegovina 2
BO - Bolivia 2
BZ - Belize 2
EE - Estonia 2
GA - Gabon 2
KW - Kuwait 2
Totale 61.520
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Città #
Ann Arbor 5.649
Woodbridge 3.079
Singapore 2.847
Hong Kong 2.599
Fairfield 2.349
Houston 2.058
Ashburn 1.868
Jacksonville 1.598
Chandler 1.545
Frankfurt am Main 1.358
Dublin 1.357
Wilmington 1.015
Santa Clara 956
Seattle 913
Dearborn 816
Milan 763
Cambridge 758
Princeton 667
Beijing 644
New York 625
Dong Ket 410
Hefei 402
Nanjing 375
Dallas 337
Los Angeles 303
Lachine 261
Altamura 260
Lawrence 245
Ho Chi Minh City 223
The Dalles 214
Shanghai 204
Moscow 195
Buffalo 189
Council Bluffs 176
Vienna 172
Seoul 169
San Diego 168
Guangzhou 159
San Jose 147
São Paulo 142
Boardman 138
Helsinki 137
Hanoi 132
Nanchang 128
Chicago 126
Toronto 119
Andover 112
Shenyang 109
Jakarta 108
Hebei 86
Changsha 84
Jinan 76
Huizen 69
Falls Church 67
Tianjin 66
Jiaxing 65
Norwalk 61
Zhengzhou 60
London 54
Hangzhou 53
Brussels 49
Dresden 49
Ottawa 48
Phoenix 48
Tokyo 47
Brooklyn 45
Southend 43
Montreal 40
Mountain View 40
Rio de Janeiro 39
Johannesburg 37
Ningbo 36
Sacramento 36
Monza 35
Rome 35
Brasília 34
Munich 34
Redmond 34
Stockholm 32
Warsaw 32
Philadelphia 31
Pune 31
University Park 31
Kunming 29
Taizhou 29
Belo Horizonte 28
Dhaka 28
Miyamae Ku 28
Nuremberg 28
Boston 27
Salt Lake City 27
San Francisco 27
Baghdad 26
Kent 26
Lausanne 26
Columbus 25
Curitiba 25
Denver 25
Kocaeli 25
Turin 25
Totale 41.405
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Nome #
Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study 415
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 400
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 395
Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling 391
Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates 379
In-plane selective area InSb–Al nanowire quantum networks 344
Band-gap modifications of beta-FeSi2 with lattice distortions corresponding to the epitaxial relationships on Si(111) 328
Optical properties of micron-sized crystals grown via 3D heteroepitaxy 328
Sunburst pattern by kinetic segregation in core-shell nanowires: A phase-field study 325
GaAs epilayers grown on patterned (001) silicon substrates via suspended Ge layers 322
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 312
Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations 309
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 305
Multiple stacking fault formation via the evolution of related dislocations by molecular dynamics simulations 303
Coordination-dependent tight-binding potentials for carbon-based materials 302
Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001) 296
Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor 295
Nature and Shape of Stacking Faults in 3C-SiC by Molecular Dynamics Simulations 295
Photonic Properties of Self-Assembled Semiconductor Microstructures 294
Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001) 294
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 291
Dislocation-free SiGe/Si heterostructures 286
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 285
Growth and coalescence of 3c-sic on si(111) micro-pillars by a phase-field approach 284
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film 282
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment 280
A Structural Characterization of GaAs MBE Grown on Si Pillars 278
"Divide et impera" in detector technology 278
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars 272
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 271
Hexagonal Diamond phase of Si and Ge by nanoindentation 265
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 262
Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations 261
Strain engineering in Ge/GeSn core/shell nanowires 258
Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations 255
Integration of MOSFETs with SiGe dots as stressor material 249
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation 249
Stability of shuffle and glide dislocation segments with increasing misfit in Ge/Si1-xGex(001) epitaxial layers 246
Site-controlled natural GaAs(111) quantum dots fabricated on vertical GaAs/Ge microcrystals on deeply patterned Si(001) substrates 244
An exceptional thermal strain reduction in Ge suspended layer grown on Si by a tilting pillar architecture 243
Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates 242
Photoluminescence study of the strain relaxation of GaAs crystals grown on deeply patterned Si substrates 241
Hybrid sputtering/evaporation deposition of Cu(In,Ga)Se 2 thin film solar cells 236
Spontaneous Ge island ordering promoted by partial silicon capping 234
Localized surface optical phonons in a layered crystal - gase(001) 234
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 234
Assessing the composition of hetero-epitaxial islands via morphological analysis: an analytical model matching GeSi/Si(001) data 233
Vertical and lateral ordering of Ge islands grown on Si(001): Theory and experiments 232
Point defects and stacking faults in TiSi2 phases by tight binding molecular dynamics 232
3D heteroepitaxy of mismatched semiconductors on silicon 231
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si 230
Dispersion relations of surface phonons in LiF(001) and NaF(001) 228
3C-SiC hetero-epitaxially grown on silicon compliance substrates and new 3C-SiC substrates for sustainable wide-band-gap power devices (CHALLENGE) 228
Accurate and analytical strain mapping at the surface of Ge/Si(001) islands by an improved flat-island approximation 227
Dislocation engineering in SiGe heteroepitaxial films on patterned Si (001) substrates 227
Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments 225
Development of a hybrid sputtering/evaporation process for Cu(In,Ga)Se 2 thin film solar cells 224
Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars 224
Self-ordering of a Ge island single layer induced by Si overgrowth 223
Phenomenological model of nanocrystalline silicon film formation by plasma-enhanced chemical vapor deposition 223
Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data 222
Thermal-hydrogen promoted selective desorption and enhanced mobility of adsorbed radicals in silicon film growth 221
Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays 221
Integration of InGaP/GaAs/Ge triple-junction solar cells on deeply patterned silicon substrates 221
Impact of misfit dislocation on wavefront distortion in Si/SiGe/Si optical waveguides 220
Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture 220
Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires 219
One-Dimensional to Three-Dimensional Ripple-to-Dome Transition for SiGe on Vicinal Si(1 1 10) 218
Microscopic environment of Fe in epitaxially stabilized c-FeSi 218
Monolithic Growth of Ultrathin Ge Nanowires on Si(001) 216
Collective Shape Oscillations of SiGe Islands on Pit-Patterned Si(001) Substrates: A Coherent-Growth Strategy Enabled by Self-Regulated Intermixing 216
In-Plane Nanowire Growth of Topological Crystalline Insulator Pb₁₋ₓSnₓTe 213
Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals 212
Energy distribution in Ge islands on Si(001): A spectral and site-resolved analysis versus size and morphology 211
Strained MOSFETs on ordered SiGe dots 211
Dislocation recombination and surface passivation of Ge micro-crystals on Si 211
Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling 211
New evidence for the folding of surface phonon modes in quasimonatomic crystals from He time-of-flight measurements in NaF 210
Modelling the kinetic growth mode of GaAs nanomembranes 210
Perfect crystals grown from imperfect interfaces 210
Key role of the wetting layer in revealing the hidden path of Ge/Si(001) Stranski-Krastanow growth onset 209
Sih and sioh electromodulation at si-sio2 interfaces in a multiple internal reflectance configuration 209
Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/InxGa1-xP Core-Shell Nanowires 209
Formation of Ge Nanoripples on Vicinal Si (1110): From Stranski-Krastanow Seeds to a Perfectly Faceted Wetting Layer 208
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 208
Binding sites for SiH2/Si(001): A combined ab initio, tight-binding, and classical investigation 207
2D versus 3D competition at the early stages of growth for Ge on Si(001) by molecular dynamics 207
Unexpected dominance of vertical dislocations in high-misfit ge/si(001) films and their elimination by deep substrate patterning 207
Cu(In,Ga)Se2 hybrid sputtering/evaporation deposition for thin film solar cells application 205
Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates 205
Continuum modeling of heteroepitaxial growth in semiconductors 205
On the helium-alkali halide surface-potential - surface corrugation vs ionic size 204
The role of ionic quadrupolar deformation in atom surface-potential 204
X-ray diffraction on stacking faults in 3C-SiC epitaxial microcrystals grown on patterned Si(0 0 1) wafers 204
Prediction of a very hard triclinic form of diamond 203
Electric-Field Effects on the Infrared-Absorption of H In A SiO2 Film 203
Inelastic-Scattering of Helium From Bulk Longitudinal Acoustic Phonons in LiF(001) 203
Monolithic integration of optical grade GaAs on Si (001) substrates deeply patterned at a micron scale 203
Misfit dislocation gettering by substrate pit-patterning in SiGe films on Si(001) 202
Detailed Analysis of the Shape-dependent Deformation Field in 3D Ge Islands 202
Totale 24.997
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Categoria #
all - tutte 208.390
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 208.390
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20213.688 0 0 0 0 0 0 500 425 517 715 340 1.191
2021/20224.608 305 478 796 477 216 283 265 240 203 276 330 739
2022/20236.738 811 1.896 666 688 490 954 59 291 460 72 196 155
2023/20244.291 152 165 229 129 634 1.020 790 156 458 57 83 418
2024/202510.621 648 1.353 561 501 819 569 403 473 1.137 1.442 900 1.815
2025/202611.313 1.887 1.590 1.904 1.978 2.410 1.197 347 0 0 0 0 0
Totale 62.664