Bicocca Open Archive

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MIGLIO, LEONIDA
 Distribuzione geografica
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Continente #
NA - Nord America 25.437
EU - Europa 10.082
AS - Asia 4.104
SA - Sud America 21
AF - Africa 20
OC - Oceania 20
Continente sconosciuto - Info sul continente non disponibili 13
Totale 39.697
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Nazione #
US - Stati Uniti d'America 25.003
SE - Svezia 1.861
CN - Cina 1.852
DE - Germania 1.817
IT - Italia 1.591
UA - Ucraina 1.447
IE - Irlanda 1.391
VN - Vietnam 784
HK - Hong Kong 695
GB - Regno Unito 594
CA - Canada 432
FI - Finlandia 374
SG - Singapore 288
FR - Francia 191
AT - Austria 170
IN - India 158
RU - Federazione Russa 147
NL - Olanda 124
TR - Turchia 111
ES - Italia 101
DK - Danimarca 83
JP - Giappone 82
BE - Belgio 60
CH - Svizzera 50
ID - Indonesia 30
KR - Corea 23
PK - Pakistan 21
TW - Taiwan 19
AU - Australia 16
CZ - Repubblica Ceca 16
GR - Grecia 16
PL - Polonia 15
EU - Europa 12
BD - Bangladesh 10
BR - Brasile 10
IR - Iran 9
BG - Bulgaria 7
MA - Marocco 7
RO - Romania 6
HU - Ungheria 5
IL - Israele 5
CL - Cile 4
NO - Norvegia 4
NZ - Nuova Zelanda 4
SA - Arabia Saudita 4
AR - Argentina 3
CI - Costa d'Avorio 3
LU - Lussemburgo 3
UZ - Uzbekistan 3
BY - Bielorussia 2
CO - Colombia 2
EE - Estonia 2
LA - Repubblica Popolare Democratica del Laos 2
MU - Mauritius 2
NG - Nigeria 2
PH - Filippine 2
SC - Seychelles 2
TN - Tunisia 2
A2 - ???statistics.table.value.countryCode.A2??? 1
BN - Brunei Darussalam 1
BZ - Belize 1
EC - Ecuador 1
EG - Egitto 1
GW - Guinea-Bissau 1
HR - Croazia 1
LB - Libano 1
LK - Sri Lanka 1
LV - Lettonia 1
MK - Macedonia 1
MO - Macao, regione amministrativa speciale della Cina 1
MX - Messico 1
MY - Malesia 1
PE - Perù 1
PT - Portogallo 1
RS - Serbia 1
TH - Thailandia 1
Totale 39.697
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Città #
Ann Arbor 5.649
Woodbridge 3.079
Fairfield 2.349
Houston 2.046
Jacksonville 1.592
Chandler 1.545
Dublin 1.350
Frankfurt am Main 1.317
Ashburn 1.132
Wilmington 1.010
Seattle 903
Dearborn 816
Cambridge 757
Hong Kong 676
Princeton 666
Milan 613
New York 569
Dong Ket 410
Nanjing 363
Lachine 261
Altamura 260
Beijing 253
Lawrence 245
Singapore 172
Shanghai 171
San Diego 167
Vienna 158
Boardman 135
Nanchang 128
Guangzhou 122
Andover 112
Shenyang 105
Toronto 105
Helsinki 91
Hebei 86
Huizen 69
Falls Church 67
Jinan 67
Jiaxing 65
Changsha 63
Norwalk 61
Tianjin 59
Brussels 48
Ottawa 45
Zhengzhou 45
Hangzhou 44
Dresden 43
Southend 43
Los Angeles 40
Mountain View 40
London 35
Sacramento 35
Ningbo 34
Redmond 34
University Park 31
Jakarta 30
Kunming 28
Philadelphia 28
Hefei 27
Taizhou 27
Pune 26
Kocaeli 25
Phoenix 23
Monza 21
Turin 21
Fremont 20
Rome 19
Ardea 18
Columbus 18
Paris 18
Lausanne 17
Umeda 17
Auburn Hills 16
Berlin 16
Vigano San Martino 16
Brescia 15
Chicago 15
San Mateo 15
Arcore 14
Grafing 14
Lanzhou 13
Nürnberg 12
Amsterdam 11
Dalmine 11
Malmö 11
Valladolid 11
Washington 11
Taipei 10
Tokyo 10
Eindhoven 9
Haikou 9
Islamabad 9
Kilburn 9
Wuhan 9
Xian 9
Bologna 8
Edmonton 8
Fukushima 8
Fuzhou 8
Karlsruhe 8
Totale 31.079
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Nome #
Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study 327
Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling 312
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 305
Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates 290
In-plane selective area InSb–Al nanowire quantum networks 270
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 270
Sunburst pattern by kinetic segregation in core-shell nanowires: A phase-field study 260
GaAs epilayers grown on patterned (001) silicon substrates via suspended Ge layers 225
Optical properties of micron-sized crystals grown via 3D heteroepitaxy 224
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 224
Growth and coalescence of 3c-sic on si(111) micro-pillars by a phase-field approach 221
"Divide et impera" in detector technology 213
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 213
Dislocation-free SiGe/Si heterostructures 207
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 204
Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor 201
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 201
Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001) 199
Multiple stacking fault formation via the evolution of related dislocations by molecular dynamics simulations 199
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment 198
Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations 197
Strain engineering in Ge/GeSn core/shell nanowires 195
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film 192
A Structural Characterization of GaAs MBE Grown on Si Pillars 183
Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations 182
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 182
Stability of shuffle and glide dislocation segments with increasing misfit in Ge/Si1-xGex(001) epitaxial layers 181
Nature and Shape of Stacking Faults in 3C-SiC by Molecular Dynamics Simulations 179
Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations 178
Hybrid sputtering/evaporation deposition of Cu(In,Ga)Se2 thin film solar cells 177
Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001) 173
Integration of MOSFETs with SiGe dots as stressor material 173
Localized surface optical phonons in a layered crystal - gase(001) 172
3C-SiC hetero-epitaxially grown on silicon compliance substrates and new 3C-SiC substrates for sustainable wide-band-gap power devices (CHALLENGE) 169
3D heteroepitaxy of mismatched semiconductors on silicon 168
Vertical and lateral ordering of Ge islands grown on Si(001): Theory and experiments 167
Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling 165
Microscopic environment of Fe in epitaxially stabilized c-FeSi 164
Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays 163
Site-controlled natural GaAs(111) quantum dots fabricated on vertical GaAs/Ge microcrystals on deeply patterned Si(001) substrates 163
Point defects and stacking faults in TiSi2 phases by tight binding molecular dynamics 162
Dispersion relations of surface phonons in LiF(001) and NaF(001) 161
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars 160
Surface energies and surface relaxation at TiSi2 competing phases 159
Spontaneous Ge island ordering promoted by partial silicon capping 158
Accurate and analytical strain mapping at the surface of Ge/Si(001) islands by an improved flat-island approximation 158
New evidence for the folding of surface phonon modes in quasimonatomic crystals from He time-of-flight measurements in NaF 158
Photoluminescence study of the strain relaxation of GaAs crystals grown on deeply patterned Si substrates 157
Development of a hybrid sputtering/evaporation process for Cu(In,Ga)Se(2) thin film solar cells 156
Assessing the composition of hetero-epitaxial islands via morphological analysis: an analytical model matching GeSi/Si(001) data 156
Electric-Field Effects on the Infrared-Absorption of H In A SiO2 Film 156
2D versus 3D competition at the early stages of growth for Ge on Si(001) by molecular dynamics 155
On the helium-alkali halide surface-potential - surface corrugation vs ionic size 155
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation 155
One-Dimensional to Three-Dimensional Ripple-to-Dome Transition for SiGe on Vicinal Si(1 1 10) 154
Observation of surface optical phonons in naf(001) by inelastic he-atom scattering 154
Impact of misfit dislocation on wavefront distortion in Si/SiGe/Si optical waveguides 153
Sih and sioh electromodulation at si-sio2 interfaces in a multiple internal reflectance configuration 152
Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates 152
Energy distribution in Ge islands on Si(001): A spectral and site-resolved analysis versus size and morphology 151
Thermal-hydrogen promoted selective desorption and enhanced mobility of adsorbed radicals in silicon film growth 151
Estimation of the critical radius for the nucleation of the c54 phase in c49 tisi2 role of the difference in density 151
Inelastic-Scattering of Helium From Bulk Longitudinal Acoustic Phonons in LiF(001) 151
The role of ionic quadrupolar deformation in atom surface-potential 150
Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture 150
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 150
Binding sites for SiH2/Si(001): A combined ab initio, tight-binding, and classical investigation 149
Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments 149
Dislocation engineering in SiGe heteroepitaxial films on patterned Si (001) substrates 149
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si 149
Phenomenological model of nanocrystalline silicon film formation by plasma-enhanced chemical vapor deposition 148
Surface green-function matching approach to the surface dynamics of ionic-crystals .1. equivalence with the invariant green-function method 148
Green's function calculation of surface phonons in ionic crystals 148
Perfect crystals grown from imperfect interfaces 148
Study of surface phonons by means of the Green's Function Method 147
Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals 147
Monolithic Growth of Ultrathin Ge Nanowires on Si(001) 146
Prediction of a very hard triclinic form of diamond 146
Monolithic integration of optical grade GaAs on Si (001) substrates deeply patterned at a micron scale 144
Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires 144
Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data 143
Space-filling Arrays of Three-Dimensional Epitaxial Ge and Si 1-xGe x Crystals 143
Relaxed SiGe heteroepitaxy on Si with very thin buffer layers: experimental LEPECVD indications and an interpretation based on strain- dependent dislocation nature 141
New epitaxially stabilized cosi phase with the cscl structure 140
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 140
Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/InxGa1-xP Core-Shell Nanowires 140
Strained MOSFETs on ordered SiGe dots 139
Interplanar force-constants in gaas and ge - bond-charge-model vs abinitio calculations 139
Some remarks on the Green's function calculation of electronic states at solid surfaces 139
An exceptional thermal strain reduction in Ge suspended layer grown on Si by a tilting pillar architecture 139
Twofold origin of strain-induced bending in core-shell nanowires: the GaP/InGaP case 139
Stress, strain and elastic energy at nanometric Ge dots on Si(001) 138
Formation of Ge Nanoripples on Vicinal Si (1110): From Stranski-Krastanow Seeds to a Perfectly Faceted Wetting Layer 138
Kinetics of the C49-C54 transformation in patterned and blanket TiSi2 films: a comparison 138
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 138
Key role of the wetting layer in revealing the hidden path of Ge/Si(001) Stranski-Krastanow growth onset 137
LATTICE-DYNAMICS OF THE SI(111) SURFACE - FOLDING EFFECTS IN THE 2X1 STRUCTURE 137
surface phonon dynamics of 2h-tase2(001) 137
Self-ordering of a Ge island single layer induced by Si overgrowth 136
Elastic and vibrational properties of pseudomorphic fesi films 136
Totale 17.150
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Categoria #
all - tutte 119.223
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 119.223
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019916 0 0 0 0 0 0 0 0 0 0 0 916
2019/20207.537 974 335 582 630 745 854 1.107 528 741 380 510 151
2020/20216.265 372 249 570 637 363 386 500 425 517 715 340 1.191
2021/20224.608 305 478 796 477 216 283 265 240 203 276 330 739
2022/20236.738 811 1.896 666 688 490 954 59 291 460 72 196 155
2023/20244.289 152 165 229 129 634 1.020 790 156 458 57 83 416
Totale 40.728