A simple model of a localized, anharmonic oscillator is developed to simulate the dynamics of hydrogen in amorphous SiO2. The absorption coefficient in the presence of a strong electric field is evaluated in order to make a comparison with experimental multiple internal reflectance infra-red spectrum. © 1986 Societá Italiana di Fisica.
Colombo, L., Stella, A., Miglio, L., Benedek, G. (1986). Electric-Field Effects on the Infrared-Absorption of H In A SiO2 Film. NUOVO CIMENTO DELLA SOCIETÀ ITALIANA DI FISICA. D CONDENSED MATTER, ATOMIC, MOLECULAR AND CHEMICAL PHYSICS, BIOPHYSICS, 7(1), 87-97 [10.1007/BF02452398].
Electric-Field Effects on the Infrared-Absorption of H In A SiO2 Film
MIGLIO, LEONIDA;BENEDEK, GIORGIO
1986
Abstract
A simple model of a localized, anharmonic oscillator is developed to simulate the dynamics of hydrogen in amorphous SiO2. The absorption coefficient in the presence of a strong electric field is evaluated in order to make a comparison with experimental multiple internal reflectance infra-red spectrum. © 1986 Societá Italiana di Fisica.File in questo prodotto:
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