In this paper we report a new method for Cu(In,Ga)Se(2) deposition for solar cell application. Differently from the common co-evaporation process, an alterative approach for thin film Cu(In,Ga)Se(2) has been tested: the sputtering deposition of metal elements combined with the selenium evaporation. We have studied the relationships between the growth parameters of our hybrid sputtering/evaporation method and the chemical-physical properties of the CIGS films. The cells are completed with a CdS buffer layer deposited by chemical bath deposition and ZnO + ITO deposited by RF sputtering. Test solar cells of 0.5 cm(2) have shown an efficiency of 10% and 2.5% on glass and stainless steel substrate respectively. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Acciarri, M., Binetti, S., LE DONNE, A., Lorenzi, B., Caccamo, L., Miglio, L., et al. (2011). Development of a hybrid sputtering/evaporation process for Cu(In,Ga)Se(2) thin film solar cells. CRYSTAL RESEARCH AND TECHNOLOGY, 46(8, SI), 871-876 [10.1002/crat.201000670].
Development of a hybrid sputtering/evaporation process for Cu(In,Ga)Se(2) thin film solar cells
ACCIARRI, MAURIZIO FILIPPO;BINETTI, SIMONA OLGA;LE DONNE, ALESSIA;LORENZI, BRUNO;MIGLIO, LEONIDA;MARCHIONNA, STEFANO;
2011
Abstract
In this paper we report a new method for Cu(In,Ga)Se(2) deposition for solar cell application. Differently from the common co-evaporation process, an alterative approach for thin film Cu(In,Ga)Se(2) has been tested: the sputtering deposition of metal elements combined with the selenium evaporation. We have studied the relationships between the growth parameters of our hybrid sputtering/evaporation method and the chemical-physical properties of the CIGS films. The cells are completed with a CdS buffer layer deposited by chemical bath deposition and ZnO + ITO deposited by RF sputtering. Test solar cells of 0.5 cm(2) have shown an efficiency of 10% and 2.5% on glass and stainless steel substrate respectively. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, WeinheimI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.