MARZEGALLI, ANNA
 Distribuzione geografica
Continente #
NA - Nord America 6.280
EU - Europa 3.347
AS - Asia 970
AF - Africa 18
SA - Sud America 6
Continente sconosciuto - Info sul continente non disponibili 4
OC - Oceania 4
Totale 10.629
Nazione #
US - Stati Uniti d'America 6.199
DE - Germania 950
IT - Italia 620
SE - Svezia 554
CN - Cina 497
IE - Irlanda 350
UA - Ucraina 243
GB - Regno Unito 207
HK - Hong Kong 175
VN - Vietnam 166
CA - Canada 80
AT - Austria 77
ES - Italia 60
FI - Finlandia 58
IN - India 51
FR - Francia 49
RU - Federazione Russa 47
DK - Danimarca 42
BE - Belgio 41
TR - Turchia 29
JP - Giappone 25
NL - Olanda 21
CH - Svizzera 13
KR - Corea 11
MA - Marocco 9
CZ - Repubblica Ceca 5
SG - Singapore 5
BR - Brasile 4
CI - Costa d'Avorio 4
AU - Australia 3
BG - Bulgaria 3
PK - Pakistan 3
AR - Argentina 2
EU - Europa 2
GR - Grecia 2
MU - Mauritius 2
PH - Filippine 2
A1 - Anonimo 1
A2 - ???statistics.table.value.countryCode.A2??? 1
BD - Bangladesh 1
BZ - Belize 1
EE - Estonia 1
IL - Israele 1
IR - Iran 1
LU - Lussemburgo 1
LV - Lettonia 1
NG - Nigeria 1
NZ - Nuova Zelanda 1
OM - Oman 1
PL - Polonia 1
RO - Romania 1
SA - Arabia Saudita 1
SC - Seychelles 1
TN - Tunisia 1
TW - Taiwan 1
Totale 10.629
Città #
Ann Arbor 1.839
Frankfurt am Main 794
Woodbridge 631
Fairfield 501
Chandler 491
Dublin 334
Houston 329
Wilmington 291
Jacksonville 272
Ashburn 269
Milan 257
Dearborn 181
Seattle 175
Hong Kong 170
Cambridge 164
New York 151
Princeton 151
Dong Ket 92
Guangzhou 86
Nanjing 86
Vienna 71
Altamura 55
Lawrence 54
Shanghai 46
Southend 43
Lachine 40
Beijing 38
San Diego 36
Brussels 35
Nanchang 33
Andover 27
Boardman 27
Shenyang 25
Hebei 18
Philadelphia 18
Pune 18
Los Angeles 17
Tianjin 17
Toronto 17
Umeda 17
Jinan 16
Sacramento 16
Vigano San Martino 16
Ottawa 15
Paris 15
Jiaxing 14
Ningbo 14
Redmond 14
Taizhou 14
Helsinki 13
Valladolid 13
Zhengzhou 13
Norwalk 12
Turin 12
Dalmine 11
Kunming 11
London 11
Monza 11
Ardea 10
Falls Church 10
Arcore 9
Changsha 9
Chicago 9
Fremont 9
Malmö 9
Mountain View 9
Dresden 8
Edmonton 7
Fornovo San Giovanni 7
Hangzhou 7
Rome 7
College Station 6
Grafing 6
Huizen 6
Lanzhou 6
Oxford 6
Auburn Hills 5
Berlin 5
Brescia 5
Calusco d'Adda 5
Casablanca 5
Cesano Maderno 5
Chiavenna 5
Chiyoda-ku 5
San Mateo 5
Sant'ambrogio Di Torino 5
Verdello 5
Abidjan 4
Bergamo 4
Chemnitz 4
Frankfurt (Oder) 4
Frankfurt An Der Oder 4
Hefei 4
Heidelberg 4
Kanpur 4
Liscate 4
Novosibirsk 4
Nürnberg 4
São Paulo 4
Xian 4
Totale 8.404
Nome #
In-plane selective area InSb–Al nanowire quantum networks 268
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 268
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 249
Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations 221
Dynamics of crosshatch patterns in heteroepitaxy 216
"Divide et impera" in detector technology 215
Modeling the dynamics of cross-hatch evolution in heteroepitaxy 214
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 211
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 203
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 200
Nature and Shape of Stacking Faults in 3C-SiC by Molecular Dynamics Simulations 199
Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001) 198
Multiple stacking fault formation via the evolution of related dislocations by molecular dynamics simulations 195
Controlling the relaxation mechanism of low strain Si1- x Gex /Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source 182
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 181
Stability of shuffle and glide dislocation segments with increasing misfit in Ge/Si1-xGex(001) epitaxial layers 179
Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations 176
Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001) 173
Integration of MOSFETs with SiGe dots as stressor material 173
Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy 173
Strain Engineering in Highly Mismatched SiGe/Si Heterostructures 171
Vertical and lateral ordering of Ge islands grown on Si(001): Theory and experiments 166
3D heteroepitaxy of mismatched semiconductors on silicon 166
Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling 164
InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires 161
Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling 157
Optical properties of shuffle dislocations in silicon 156
Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture 149
Perfect crystals grown from imperfect interfaces 148
Misfit-Dislocation Distributions in Heteroepitaxy: From Mesoscale Measurements to Individual Defects and Back 146
Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals 145
Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires 144
Space-filling Arrays of Three-Dimensional Epitaxial Ge and Si 1-xGe x Crystals 143
Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data 141
An exceptional thermal strain reduction in Ge suspended layer grown on Si by a tilting pillar architecture 141
Relaxed SiGe heteroepitaxy on Si with very thin buffer layers: experimental LEPECVD indications and an interpretation based on strain- dependent dislocation nature 139
Strained MOSFETs on ordered SiGe dots 138
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 137
Detailed Analysis of the Shape-dependent Deformation Field in 3D Ge Islands 136
Unexpected dominance of vertical dislocations in high-misfit ge/si(001) films and their elimination by deep substrate patterning 136
Three dimensional heteroepitaxy: A new path for monolithically integrating mismatched materials with silicon 135
Scaling Hetero-Epitaxy from Layers to Three-Dimensional Crystals 133
Critical shape and size for dislocation nucleation in si1-xGex islands on Si(001) 132
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 131
Self-aligned epitaxy in a mask-less deposition with kinetic and geometric constraints 125
Atomistic simulation of a 60 degrees shuffle dislocation segment migrating in a Ge/SiGe(001) epitaxial film 124
Strain and strain-release engineering at epitaxial SiGe islands on Si(0 0 1) for microelectronic applications 124
Anisotropic extended misfit dislocations in overcritical SiGe films by local substrate patterning 122
Atomic-scale insights on the formation of ordered arrays of edge dislocations in Ge/Si(001) films via molecular dynamics simulations 120
Onset of vertical threading dislocations in Si1-xGex/Si (001) at a critical Ge concentration 119
Fully coherent growth of Ge on free-standing Si(001) nanomesas 117
Si CMOS compatible, compliant integration of lattice-mismatched semiconductors on Si(001): Example of fully coherent Ge/Si nanostructures 117
Modeling the plastic relaxation onset in realistic SiGe islands on Si(001) 116
Crystal free energy of SiC polytypes and stacking faults formation energy from DFT-based lattice-dynamics approach 114
Hexagonal Diamond phase of Si and Ge by nanoindentation 113
Burgers Vector Analysis of Vertical Dislocations in Ge Crystals by Large-Angle Convergent Beam Electron Diffraction 113
Continuum modeling of heteroepitaxial growth: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing 112
3D heteroepitaxy on patterned Si substrates: a new monolithic integration strategy 110
New approaches and understandings in the growth of cubic silicon carbide 108
From the crystal free energy of SiC polytypes to the stacking faults formation energy: a DFT-based lattice-dynamics approach. 104
Engineered coalescence of three-dimensional Ge microcrystals into high-quality suspended layers on Si pillars 103
Theoretical interpretation of tilting-angle maps in heteroepitaxial films 101
Epitaxial Ge-crystal arrays for X-ray detection 99
Vacancy-mediated climbing motion of dislocations in Ge/Si films: atomic-scale insights via molecular dynamics 97
Extended defects in 3C-SiC: Stacking faults, threading partial dislocations, and inverted domain boundaries 95
Dislocation trapping in epitaxial islands, escavated trenches and pits: nanoscale laboratories for simulations and experiments 93
Dynamics of cross-hatch evolution in heteroepitaxy 92
Stress engineering of boron doped diamond thin films via micro-fabrication 92
Unveiling Planar Defects in Hexagonal Group IV Materials 84
Dislocation assessment and their elimination in high-quality Ge microcrystals integrated on deeply patterned Si (001) substrates 80
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 76
Misfit relaxation in heteroepitaxy: A theoretical method for inferring individual dislocation positions from tilting maps 76
Three-dimensional EpitaxialSi1-xGex, Ge and SiC Crystals onDeeply Patterned Si substrates 75
Understanding complex dislocation behavior and reactions in advanced GeSi epitaxy 74
Evolution and Intersection of Extended Defects and Stacking Faults in 3C-SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case 62
Defects in hexagonal Si-Ge nanowires: the extended I3 vs a “virtual” point-like defect 61
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy 57
Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns 52
Hexagonal Si and Ge polytypes for silicon photonics 49
3C-SiC epitaxy on deeply patterned Si(111) substrates 49
Impact of Inversion Domain Boundaries on the Electronic Properties of 3C-SiC 47
Modelling the structural origin of defects in hexagonal Ge nanowires: the extended I3 vs a point-like defect 33
Author Correction: In-plane selective area InSb–Al nanowire quantum networks (Communications Physics, (2020), 3, 1, (59), 10.1038/s42005-020-0324-4) 32
Totale 11.146
Categoria #
all - tutte 27.891
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 27.891


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019639 0 0 0 0 0 0 0 0 50 133 210 246
2019/20201.775 197 81 154 135 150 209 252 125 179 124 134 35
2020/20211.836 70 60 165 171 112 144 138 162 173 186 141 314
2021/20221.462 140 133 206 177 60 116 66 83 72 108 103 198
2022/20232.457 250 592 239 254 120 277 40 173 201 80 134 97
2023/20241.234 69 94 57 55 195 333 229 64 138 0 0 0
Totale 11.146