Bicocca Open Archive

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MARZEGALLI, ANNA
 Distribuzione geografica
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Continente #
NA - Nord America 8.389
EU - Europa 4.764
AS - Asia 4.660
SA - Sud America 605
AF - Africa 105
OC - Oceania 15
Continente sconosciuto - Info sul continente non disponibili 4
Totale 18.542
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Nazione #
US - Stati Uniti d'America 8.209
SG - Singapore 1.742
CN - Cina 1.263
IT - Italia 1.066
DE - Germania 846
RU - Federazione Russa 715
HK - Hong Kong 708
SE - Svezia 577
BR - Brasile 490
VN - Vietnam 367
IE - Irlanda 359
UA - Ucraina 273
GB - Regno Unito 271
FR - Francia 163
CA - Canada 129
IN - India 118
FI - Finlandia 106
AT - Austria 96
ES - Italia 96
JP - Giappone 85
ID - Indonesia 84
KR - Corea 79
DK - Danimarca 45
ZA - Sudafrica 45
TR - Turchia 43
AR - Argentina 41
MX - Messico 38
NL - Olanda 32
BD - Bangladesh 28
IQ - Iraq 28
BE - Belgio 23
CH - Svizzera 22
PL - Polonia 22
MA - Marocco 21
PK - Pakistan 21
CO - Colombia 19
AU - Australia 13
TW - Taiwan 13
EC - Ecuador 11
PE - Perù 11
SA - Arabia Saudita 11
VE - Venezuela 11
PY - Paraguay 10
AE - Emirati Arabi Uniti 8
NP - Nepal 8
UZ - Uzbekistan 8
LT - Lituania 7
CI - Costa d'Avorio 6
CZ - Repubblica Ceca 6
TN - Tunisia 6
UY - Uruguay 6
AZ - Azerbaigian 5
DZ - Algeria 5
ET - Etiopia 5
IL - Israele 5
KE - Kenya 5
NO - Norvegia 5
PH - Filippine 5
AL - Albania 4
CL - Cile 4
HU - Ungheria 4
IR - Iran 4
MY - Malesia 4
OM - Oman 4
SI - Slovenia 4
BG - Bulgaria 3
DO - Repubblica Dominicana 3
GA - Gabon 3
GR - Grecia 3
JO - Giordania 3
LV - Lettonia 3
RO - Romania 3
BY - Bielorussia 2
EG - Egitto 2
EU - Europa 2
JM - Giamaica 2
KG - Kirghizistan 2
KZ - Kazakistan 2
LA - Repubblica Popolare Democratica del Laos 2
LB - Libano 2
MU - Mauritius 2
PT - Portogallo 2
TT - Trinidad e Tobago 2
A1 - Anonimo 1
A2 - ???statistics.table.value.countryCode.A2??? 1
AM - Armenia 1
BA - Bosnia-Erzegovina 1
BB - Barbados 1
BH - Bahrain 1
BO - Bolivia 1
BZ - Belize 1
EE - Estonia 1
GE - Georgia 1
GY - Guiana 1
HN - Honduras 1
IS - Islanda 1
KW - Kuwait 1
LK - Sri Lanka 1
LU - Lussemburgo 1
LY - Libia 1
Totale 18.528
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Città #
Ann Arbor 1.840
Singapore 987
Hong Kong 701
Woodbridge 631
Frankfurt am Main 594
Ashburn 587
Fairfield 501
Chandler 491
Milan 403
Dublin 336
Houston 335
Wilmington 292
Jacksonville 273
Santa Clara 232
Beijing 214
Dearborn 181
New York 181
Seattle 180
Dallas 177
Cambridge 165
Princeton 153
Hefei 148
Los Angeles 136
Guangzhou 98
Dong Ket 92
Nanjing 87
The Dalles 79
Buffalo 78
Vienna 78
Jakarta 63
Moscow 63
Seoul 61
Shanghai 61
Ho Chi Minh City 58
São Paulo 56
Altamura 55
Lawrence 54
Hanoi 48
Southend 43
Chicago 42
Council Bluffs 40
Lachine 40
Munich 37
San Diego 36
Monza 34
Nanchang 33
Boardman 29
Paris 29
Shenyang 28
Andover 27
Helsinki 27
Rome 27
Tianjin 27
Brooklyn 25
Stockholm 24
Miyamae Ku 23
London 22
Tokyo 22
Toronto 22
Zhengzhou 22
Montreal 21
Kent 20
Como 19
Pune 19
Valladolid 19
Boston 18
Chennai 18
Denver 18
Hebei 18
Jinan 18
Dalmine 17
Johannesburg 17
Sacramento 17
Umeda 17
Naples 16
Ottawa 16
Turku 16
Vigano San Martino 16
Berlin 15
Ningbo 15
Changsha 14
Haiphong 14
Jiaxing 14
Lappeenranta 14
Nuremberg 14
Phoenix 14
Redmond 14
Taizhou 14
Warsaw 14
Brussels 13
Mexico City 13
Redondo Beach 13
Desio 12
Kunming 12
Norwalk 12
Salt Lake City 12
Turin 12
Bergamo 11
Hangzhou 11
Rio de Janeiro 11
Totale 12.036
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Nome #
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 395
In-plane selective area InSb–Al nanowire quantum networks 342
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 309
Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations 304
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 300
Multiple stacking fault formation via the evolution of related dislocations by molecular dynamics simulations 299
Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001) 293
Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001) 293
Nature and Shape of Stacking Faults in 3C-SiC by Molecular Dynamics Simulations 292
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 288
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 282
"Divide et impera" in detector technology 277
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 271
Dynamics of crosshatch patterns in heteroepitaxy 271
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 260
Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations 260
Hexagonal Diamond phase of Si and Ge by nanoindentation 258
InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires 255
Modeling the dynamics of cross-hatch evolution in heteroepitaxy 254
Integration of MOSFETs with SiGe dots as stressor material 249
Strain Engineering in Highly Mismatched SiGe/Si Heterostructures 244
Stability of shuffle and glide dislocation segments with increasing misfit in Ge/Si1-xGex(001) epitaxial layers 244
An exceptional thermal strain reduction in Ge suspended layer grown on Si by a tilting pillar architecture 240
Controlling the relaxation mechanism of low strain Si1- x Gex /Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source 233
Optical properties of shuffle dislocations in silicon 233
Vertical and lateral ordering of Ge islands grown on Si(001): Theory and experiments 229
3D heteroepitaxy of mismatched semiconductors on silicon 229
Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy 224
Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires 223
Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data 220
Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture 217
Vacancy-mediated climbing motion of dislocations in Ge/Si films: atomic-scale insights via molecular dynamics 214
Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling 211
Strained MOSFETs on ordered SiGe dots 210
Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling 210
Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals 210
Hexagonal Si and Ge polytypes for silicon photonics 208
Perfect crystals grown from imperfect interfaces 207
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 206
Unexpected dominance of vertical dislocations in high-misfit ge/si(001) films and their elimination by deep substrate patterning 205
Detailed Analysis of the Shape-dependent Deformation Field in 3D Ge Islands 201
Unraveling the atomic-scale pathways driving pressure-induced phase transitions in silicon 199
Atomic-scale insights on the formation of ordered arrays of edge dislocations in Ge/Si(001) films via molecular dynamics simulations 198
Relaxed SiGe heteroepitaxy on Si with very thin buffer layers: experimental LEPECVD indications and an interpretation based on strain- dependent dislocation nature 196
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 196
Space-filling Arrays of Three-Dimensional Epitaxial Ge and Si 1-xGe x Crystals 194
Three dimensional heteroepitaxy: A new path for monolithically integrating mismatched materials with silicon 193
3D heteroepitaxy on patterned Si substrates: a new monolithic integration strategy 192
Misfit-Dislocation Distributions in Heteroepitaxy: From Mesoscale Measurements to Individual Defects and Back 192
Modeling the plastic relaxation onset in realistic SiGe islands on Si(001) 190
Scaling Hetero-Epitaxy from Layers to Three-Dimensional Crystals 189
Results and challenges in obtaining the hexagonal diamond Si phase by nanoindentation 185
Critical shape and size for dislocation nucleation in si1-xGex islands on Si(001) 185
Anisotropic extended misfit dislocations in overcritical SiGe films by local substrate patterning 183
Extended defects in 3C-SiC: Stacking faults, threading partial dislocations, and inverted domain boundaries 181
Crystal free energy of SiC polytypes and stacking faults formation energy from DFT-based lattice-dynamics approach 179
Self-aligned epitaxy in a mask-less deposition with kinetic and geometric constraints 177
Engineered coalescence of three-dimensional Ge microcrystals into high-quality suspended layers on Si pillars 177
2H-Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core-Shell Nanowires 173
Strain and strain-release engineering at epitaxial SiGe islands on Si(0 0 1) for microelectronic applications 173
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy 172
Fully coherent growth of Ge on free-standing Si(001) nanomesas 172
Continuum modeling of heteroepitaxial growth: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing 170
Defects in hexagonal Si-Ge nanowires: the extended I3 vs a “virtual” point-like defect 168
Development of a machine learning interatomic potential for exploring pressure-dependent kinetics of phase transitions in germanium 163
Atomistic simulation of a 60 degrees shuffle dislocation segment migrating in a Ge/SiGe(001) epitaxial film 162
Si CMOS compatible, compliant integration of lattice-mismatched semiconductors on Si(001): Example of fully coherent Ge/Si nanostructures 162
Dislocation trapping in epitaxial islands, escavated trenches and pits: nanoscale laboratories for simulations and experiments 161
Onset of vertical threading dislocations in Si1-xGex/Si (001) at a critical Ge concentration 160
Atomistic Mechanisms of dc-hd Phase Transition in Si Nanoindentation 157
Burgers Vector Analysis of Vertical Dislocations in Ge Crystals by Large-Angle Convergent Beam Electron Diffraction 157
Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation 155
Dislocation assessment and their elimination in high-quality Ge microcrystals integrated on deeply patterned Si (001) substrates 153
From the crystal free energy of SiC polytypes to the stacking faults formation energy: a DFT-based lattice-dynamics approach. 150
Theoretical interpretation of tilting-angle maps in heteroepitaxial films 148
Evolution and Intersection of Extended Defects and Stacking Faults in 3C-SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case 148
Epitaxial Ge-crystal arrays for X-ray detection 145
Dynamics of cross-hatch evolution in heteroepitaxy 143
New approaches and understandings in the growth of cubic silicon carbide 143
Modelling the structural origin of defects in hexagonal Ge nanowires: the extended I3 vs a point-like defect 137
Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns 134
Author Correction: In-plane selective area InSb–Al nanowire quantum networks (Communications Physics, (2020), 3, 1, (59), 10.1038/s42005-020-0324-4) 133
Misfit relaxation in heteroepitaxy: A theoretical method for inferring individual dislocation positions from tilting maps 130
Stress engineering of boron doped diamond thin films via micro-fabrication 129
Polytypic quantum wells in Si and Ge: impact of 2D hexagonal inclusions on electronic band structure 128
Unravelling Atomistic Mechanisms of Pressure-Induced Phase Transitions in Silicon Nanoindentation 124
Impact of Inversion Domain Boundaries on the Electronic Properties of 3C-SiC 124
Full Picture of Lattice Deformation in a Ge1 − xSnx Micro-Disk by 5D X-ray Diffraction Microscopy 122
Three-dimensional EpitaxialSi1-xGex, Ge and SiC Crystals onDeeply Patterned Si substrates 120
Unveiling Planar Defects in Hexagonal Group IV Materials 120
Understanding complex dislocation behavior and reactions in advanced GeSi epitaxy 110
The Lattice Strain Distribution in GexSn1-x Micro-Disks Investigated at the Sub 100-nm Scale 100
3C-SiC epitaxy on deeply patterned Si(111) substrates 94
TEM analysis of Textured Silicon Polymorph Crystals obtained via Nanoindentation and Annealing 68
Electronic Properties of Perfect Dislocations in Germanium: A First-Principles Study 66
Interaction of Dopants with the I3-Type Basal Stacking Fault in Hexagonal-Diamond Si 57
Origin and Evolution of I3 defects in Hexagonal Silicon and Germanium 47
Planar Hexagonal Germanium Grown on Cadmium Sulfide Substrate by Low-Energy Plasma-Enhanced Chemical Vapor Deposition. 43
Unraveling Atomistic Mechanisms of Pressure-Induced Phase Transitions in Silicon and Germanium 41
Electronic Properties of Extended Defects in Germanium: A First-Principles Study 38
Totale 18.976
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Categoria #
all - tutte 61.491
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 61.491
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.258 0 0 0 0 0 144 138 162 173 186 141 314
2021/20221.462 140 133 206 177 60 116 66 83 72 108 103 198
2022/20232.232 250 592 239 254 120 277 28 128 153 42 80 69
2023/20241.393 59 81 41 45 187 333 229 64 140 42 43 129
2024/20253.622 153 429 226 221 298 178 149 181 333 559 308 587
2025/20264.468 775 597 673 748 1.288 387 0 0 0 0 0 0
Totale 19.170