Bicocca Open Archive

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MARZEGALLI, ANNA
 Distribuzione geografica
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Continente #
NA - Nord America 8.342
EU - Europa 4.739
AS - Asia 4.500
SA - Sud America 600
AF - Africa 103
OC - Oceania 15
Continente sconosciuto - Info sul continente non disponibili 4
Totale 18.303
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Nazione #
US - Stati Uniti d'America 8.168
SG - Singapore 1.595
CN - Cina 1.257
IT - Italia 1.056
DE - Germania 846
RU - Federazione Russa 715
HK - Hong Kong 708
SE - Svezia 576
BR - Brasile 485
VN - Vietnam 366
IE - Irlanda 359
UA - Ucraina 273
GB - Regno Unito 265
FR - Francia 159
CA - Canada 127
IN - India 117
FI - Finlandia 105
AT - Austria 96
ES - Italia 95
JP - Giappone 85
ID - Indonesia 83
KR - Corea 79
DK - Danimarca 45
TR - Turchia 43
ZA - Sudafrica 43
AR - Argentina 41
MX - Messico 34
NL - Olanda 32
IQ - Iraq 28
BD - Bangladesh 27
BE - Belgio 23
CH - Svizzera 22
MA - Marocco 21
PL - Polonia 21
PK - Pakistan 20
CO - Colombia 19
AU - Australia 13
TW - Taiwan 13
EC - Ecuador 11
PE - Perù 11
SA - Arabia Saudita 11
VE - Venezuela 11
PY - Paraguay 10
AE - Emirati Arabi Uniti 8
NP - Nepal 8
UZ - Uzbekistan 8
CI - Costa d'Avorio 6
CZ - Repubblica Ceca 6
LT - Lituania 6
TN - Tunisia 6
UY - Uruguay 6
AZ - Azerbaigian 5
DZ - Algeria 5
ET - Etiopia 5
KE - Kenya 5
NO - Norvegia 5
PH - Filippine 5
AL - Albania 4
CL - Cile 4
HU - Ungheria 4
IL - Israele 4
IR - Iran 4
MY - Malesia 4
OM - Oman 4
SI - Slovenia 4
BG - Bulgaria 3
DO - Repubblica Dominicana 3
GA - Gabon 3
GR - Grecia 3
JO - Giordania 3
LV - Lettonia 3
RO - Romania 3
BY - Bielorussia 2
EG - Egitto 2
EU - Europa 2
JM - Giamaica 2
KG - Kirghizistan 2
KZ - Kazakistan 2
LA - Repubblica Popolare Democratica del Laos 2
LB - Libano 2
MU - Mauritius 2
PT - Portogallo 2
TT - Trinidad e Tobago 2
A1 - Anonimo 1
A2 - ???statistics.table.value.countryCode.A2??? 1
AM - Armenia 1
BA - Bosnia-Erzegovina 1
BB - Barbados 1
BH - Bahrain 1
BO - Bolivia 1
BZ - Belize 1
EE - Estonia 1
GE - Georgia 1
GY - Guiana 1
HN - Honduras 1
IS - Islanda 1
KW - Kuwait 1
LK - Sri Lanka 1
LU - Lussemburgo 1
LY - Libia 1
Totale 18.290
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Città #
Ann Arbor 1.840
Singapore 942
Hong Kong 701
Woodbridge 631
Frankfurt am Main 594
Ashburn 578
Fairfield 501
Chandler 491
Milan 402
Dublin 336
Houston 335
Wilmington 292
Jacksonville 273
Santa Clara 232
Beijing 214
Dearborn 181
Seattle 180
Dallas 176
New York 176
Cambridge 165
Princeton 153
Hefei 148
Los Angeles 130
Guangzhou 98
Dong Ket 92
Nanjing 87
The Dalles 79
Buffalo 78
Vienna 78
Jakarta 63
Moscow 63
Seoul 61
Shanghai 61
Ho Chi Minh City 58
Altamura 55
Lawrence 54
São Paulo 52
Hanoi 48
Southend 43
Chicago 41
Council Bluffs 40
Lachine 40
Munich 37
San Diego 36
Monza 34
Nanchang 33
Boardman 29
Paris 29
Shenyang 28
Andover 27
Helsinki 27
Tianjin 27
Rome 26
Brooklyn 24
Miyamae Ku 23
Stockholm 23
Tokyo 22
Toronto 22
Zhengzhou 22
London 21
Kent 20
Como 19
Montreal 19
Pune 19
Valladolid 19
Boston 18
Hebei 18
Jinan 18
Chennai 17
Dalmine 17
Sacramento 17
Umeda 17
Naples 16
Ottawa 16
Turku 16
Vigano San Martino 16
Berlin 15
Denver 15
Johannesburg 15
Ningbo 15
Changsha 14
Haiphong 14
Jiaxing 14
Nuremberg 14
Phoenix 14
Redmond 14
Taizhou 14
Brussels 13
Lappeenranta 13
Redondo Beach 13
Warsaw 13
Desio 12
Kunming 12
Mexico City 12
Norwalk 12
Turin 12
Bergamo 11
Hangzhou 11
Rio de Janeiro 11
Salt Lake City 11
Totale 11.948
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Nome #
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 391
In-plane selective area InSb–Al nanowire quantum networks 339
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 307
Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations 302
Multiple stacking fault formation via the evolution of related dislocations by molecular dynamics simulations 297
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 296
Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001) 291
Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001) 290
Nature and Shape of Stacking Faults in 3C-SiC by Molecular Dynamics Simulations 289
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 286
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 276
"Divide et impera" in detector technology 274
Dynamics of crosshatch patterns in heteroepitaxy 270
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 269
Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations 259
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 258
Hexagonal Diamond phase of Si and Ge by nanoindentation 255
Modeling the dynamics of cross-hatch evolution in heteroepitaxy 253
InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires 252
Integration of MOSFETs with SiGe dots as stressor material 247
Strain Engineering in Highly Mismatched SiGe/Si Heterostructures 243
Stability of shuffle and glide dislocation segments with increasing misfit in Ge/Si1-xGex(001) epitaxial layers 241
An exceptional thermal strain reduction in Ge suspended layer grown on Si by a tilting pillar architecture 237
Controlling the relaxation mechanism of low strain Si1- x Gex /Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source 231
Optical properties of shuffle dislocations in silicon 231
3D heteroepitaxy of mismatched semiconductors on silicon 228
Vertical and lateral ordering of Ge islands grown on Si(001): Theory and experiments 227
Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy 223
Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires 221
Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data 218
Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture 215
Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling 210
Vacancy-mediated climbing motion of dislocations in Ge/Si films: atomic-scale insights via molecular dynamics 210
Strained MOSFETs on ordered SiGe dots 209
Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals 208
Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling 207
Hexagonal Si and Ge polytypes for silicon photonics 206
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 205
Perfect crystals grown from imperfect interfaces 205
Unexpected dominance of vertical dislocations in high-misfit ge/si(001) films and their elimination by deep substrate patterning 203
Detailed Analysis of the Shape-dependent Deformation Field in 3D Ge Islands 199
Atomic-scale insights on the formation of ordered arrays of edge dislocations in Ge/Si(001) films via molecular dynamics simulations 197
Unraveling the atomic-scale pathways driving pressure-induced phase transitions in silicon 196
Relaxed SiGe heteroepitaxy on Si with very thin buffer layers: experimental LEPECVD indications and an interpretation based on strain- dependent dislocation nature 195
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 195
Space-filling Arrays of Three-Dimensional Epitaxial Ge and Si 1-xGe x Crystals 193
Three dimensional heteroepitaxy: A new path for monolithically integrating mismatched materials with silicon 192
Misfit-Dislocation Distributions in Heteroepitaxy: From Mesoscale Measurements to Individual Defects and Back 191
3D heteroepitaxy on patterned Si substrates: a new monolithic integration strategy 190
Modeling the plastic relaxation onset in realistic SiGe islands on Si(001) 189
Scaling Hetero-Epitaxy from Layers to Three-Dimensional Crystals 188
Results and challenges in obtaining the hexagonal diamond Si phase by nanoindentation 183
Critical shape and size for dislocation nucleation in si1-xGex islands on Si(001) 183
Anisotropic extended misfit dislocations in overcritical SiGe films by local substrate patterning 181
Extended defects in 3C-SiC: Stacking faults, threading partial dislocations, and inverted domain boundaries 178
Crystal free energy of SiC polytypes and stacking faults formation energy from DFT-based lattice-dynamics approach 176
Self-aligned epitaxy in a mask-less deposition with kinetic and geometric constraints 174
Engineered coalescence of three-dimensional Ge microcrystals into high-quality suspended layers on Si pillars 174
Strain and strain-release engineering at epitaxial SiGe islands on Si(0 0 1) for microelectronic applications 172
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy 171
2H-Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core-Shell Nanowires 171
Fully coherent growth of Ge on free-standing Si(001) nanomesas 171
Continuum modeling of heteroepitaxial growth: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing 169
Defects in hexagonal Si-Ge nanowires: the extended I3 vs a “virtual” point-like defect 166
Atomistic simulation of a 60 degrees shuffle dislocation segment migrating in a Ge/SiGe(001) epitaxial film 161
Si CMOS compatible, compliant integration of lattice-mismatched semiconductors on Si(001): Example of fully coherent Ge/Si nanostructures 161
Development of a machine learning interatomic potential for exploring pressure-dependent kinetics of phase transitions in germanium 159
Onset of vertical threading dislocations in Si1-xGex/Si (001) at a critical Ge concentration 159
Dislocation trapping in epitaxial islands, escavated trenches and pits: nanoscale laboratories for simulations and experiments 159
Burgers Vector Analysis of Vertical Dislocations in Ge Crystals by Large-Angle Convergent Beam Electron Diffraction 156
Atomistic Mechanisms of dc-hd Phase Transition in Si Nanoindentation 154
Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation 153
Dislocation assessment and their elimination in high-quality Ge microcrystals integrated on deeply patterned Si (001) substrates 152
From the crystal free energy of SiC polytypes to the stacking faults formation energy: a DFT-based lattice-dynamics approach. 148
Theoretical interpretation of tilting-angle maps in heteroepitaxial films 147
Evolution and Intersection of Extended Defects and Stacking Faults in 3C-SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case 146
Epitaxial Ge-crystal arrays for X-ray detection 144
Dynamics of cross-hatch evolution in heteroepitaxy 142
New approaches and understandings in the growth of cubic silicon carbide 142
Modelling the structural origin of defects in hexagonal Ge nanowires: the extended I3 vs a point-like defect 135
Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns 133
Author Correction: In-plane selective area InSb–Al nanowire quantum networks (Communications Physics, (2020), 3, 1, (59), 10.1038/s42005-020-0324-4) 131
Polytypic quantum wells in Si and Ge: impact of 2D hexagonal inclusions on electronic band structure 127
Misfit relaxation in heteroepitaxy: A theoretical method for inferring individual dislocation positions from tilting maps 127
Stress engineering of boron doped diamond thin films via micro-fabrication 127
Impact of Inversion Domain Boundaries on the Electronic Properties of 3C-SiC 124
Full Picture of Lattice Deformation in a Ge1 − xSnx Micro-Disk by 5D X-ray Diffraction Microscopy 121
Unravelling Atomistic Mechanisms of Pressure-Induced Phase Transitions in Silicon Nanoindentation 120
Unveiling Planar Defects in Hexagonal Group IV Materials 120
Three-dimensional EpitaxialSi1-xGex, Ge and SiC Crystals onDeeply Patterned Si substrates 118
Understanding complex dislocation behavior and reactions in advanced GeSi epitaxy 109
The Lattice Strain Distribution in GexSn1-x Micro-Disks Investigated at the Sub 100-nm Scale 98
3C-SiC epitaxy on deeply patterned Si(111) substrates 92
TEM analysis of Textured Silicon Polymorph Crystals obtained via Nanoindentation and Annealing 62
Electronic Properties of Perfect Dislocations in Germanium: A First-Principles Study 59
Interaction of Dopants with the I3-Type Basal Stacking Fault in Hexagonal-Diamond Si 55
Origin and Evolution of I3 defects in Hexagonal Silicon and Germanium 42
Planar Hexagonal Germanium Grown on Cadmium Sulfide Substrate by Low-Energy Plasma-Enhanced Chemical Vapor Deposition. 39
Electronic Properties of Extended Defects in Germanium: A First-Principles Study 33
Unraveling Atomistic Mechanisms of Pressure-Induced Phase Transitions in Silicon and Germanium 33
Totale 18.761
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Categoria #
all - tutte 60.913
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 60.913
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.258 0 0 0 0 0 144 138 162 173 186 141 314
2021/20221.462 140 133 206 177 60 116 66 83 72 108 103 198
2022/20232.232 250 592 239 254 120 277 28 128 153 42 80 69
2023/20241.393 59 81 41 45 187 333 229 64 140 42 43 129
2024/20253.622 153 429 226 221 298 178 149 181 333 559 308 587
2025/20264.229 775 597 673 748 1.288 148 0 0 0 0 0 0
Totale 18.931