Bicocca Open Archive

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MARZEGALLI, ANNA
 Distribuzione geografica
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Continente #
NA - Nord America 10.809
AS - Asia 6.407
EU - Europa 5.776
SA - Sud America 810
AF - Africa 188
OC - Oceania 20
Continente sconosciuto - Info sul continente non disponibili 5
Totale 24.015
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Nazione #
US - Stati Uniti d'America 10.214
SG - Singapore 2.280
IT - Italia 1.680
CN - Cina 1.405
DE - Germania 886
VN - Vietnam 765
HK - Hong Kong 763
RU - Federazione Russa 732
BR - Brasile 594
SE - Svezia 580
CA - Canada 507
IE - Irlanda 361
GB - Regno Unito 311
FR - Francia 301
UA - Ucraina 286
IN - India 218
BD - Bangladesh 174
KR - Corea 130
FI - Finlandia 125
ES - Italia 119
ID - Indonesia 103
JP - Giappone 103
AT - Austria 97
TR - Turchia 81
AR - Argentina 69
ZA - Sudafrica 65
NL - Olanda 64
IQ - Iraq 63
MX - Messico 50
PK - Pakistan 48
DK - Danimarca 45
CH - Svizzera 44
PH - Filippine 40
CO - Colombia 37
SA - Arabia Saudita 35
MA - Marocco 32
BE - Belgio 31
EC - Ecuador 29
PL - Polonia 27
UZ - Uzbekistan 27
MY - Malesia 21
TW - Taiwan 20
VE - Venezuela 19
AE - Emirati Arabi Uniti 18
AU - Australia 18
NP - Nepal 17
CL - Cile 16
KE - Kenya 15
PE - Perù 15
PY - Paraguay 15
TN - Tunisia 15
ET - Etiopia 14
JO - Giordania 14
DZ - Algeria 11
UY - Uruguay 11
AZ - Azerbaigian 10
JM - Giamaica 10
AL - Albania 9
CZ - Repubblica Ceca 9
HU - Ungheria 9
OM - Oman 9
TH - Thailandia 9
GR - Grecia 8
IL - Israele 8
LB - Libano 8
SI - Slovenia 8
LT - Lituania 7
NO - Norvegia 7
CI - Costa d'Avorio 6
NI - Nicaragua 6
BY - Bielorussia 5
PS - Palestinian Territory 5
SN - Senegal 5
BG - Bulgaria 4
DO - Repubblica Dominicana 4
GE - Georgia 4
HN - Honduras 4
IR - Iran 4
PT - Portogallo 4
RS - Serbia 4
TT - Trinidad e Tobago 4
AM - Armenia 3
AO - Angola 3
BO - Bolivia 3
EG - Egitto 3
GA - Gabon 3
KG - Kirghizistan 3
KW - Kuwait 3
KZ - Kazakistan 3
LV - Lettonia 3
RO - Romania 3
SC - Seychelles 3
SY - Repubblica araba siriana 3
BH - Bahrain 2
CR - Costa Rica 2
EE - Estonia 2
EU - Europa 2
GY - Guiana 2
LA - Repubblica Popolare Democratica del Laos 2
LK - Sri Lanka 2
Totale 23.980
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Città #
Ann Arbor 1.841
Singapore 1.331
San Jose 861
Ashburn 773
Hong Kong 746
Woodbridge 631
Milan 627
Frankfurt am Main 611
Fairfield 501
Chandler 491
Toronto 372
Houston 345
Dublin 338
Wilmington 294
Jacksonville 275
Santa Clara 264
Beijing 229
New York 223
Dallas 195
Los Angeles 194
Seattle 183
Dearborn 181
Cambridge 169
The Dalles 168
Hanoi 157
Ho Chi Minh City 155
Chicago 154
Princeton 153
Hefei 149
Seoul 109
Guangzhou 99
Rome 93
Dong Ket 92
Nanjing 88
Buffalo 86
Lauterbourg 85
Vienna 79
Council Bluffs 75
Shanghai 70
Moscow 66
São Paulo 66
Jakarta 65
Altamura 55
Lawrence 54
Southend 43
Helsinki 42
Lachine 40
Boardman 38
San Diego 38
Munich 37
Monza 36
Nanchang 33
Tokyo 33
Brooklyn 32
Montreal 32
Naples 32
Paris 32
Orem 31
Turin 31
Chennai 29
Shenyang 28
Andover 27
London 27
Tianjin 27
Columbus 26
Sacramento 26
Da Nang 25
Pune 25
Stockholm 25
Boston 24
Haiphong 24
Johannesburg 24
Miyamae Ku 23
Zhengzhou 23
Atlanta 21
Denver 21
Sesto San Giovanni 21
Tashkent 21
Zurich 21
Dhaka 20
Kent 20
Philadelphia 20
Valladolid 20
Baghdad 19
Como 19
Mexico City 19
Phoenix 19
Berlin 18
Brussels 18
Hebei 18
Jinan 18
Warsaw 18
Brescia 17
Dalmine 17
Nuremberg 17
Umeda 17
Changsha 16
Ottawa 16
Turku 16
Vigano San Martino 16
Totale 15.189
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Nome #
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 447
In-plane selective area InSb–Al nanowire quantum networks 386
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 367
Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations 363
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 362
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 356
Multiple stacking fault formation via the evolution of related dislocations by molecular dynamics simulations 354
Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001) 351
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 349
Nature and Shape of Stacking Faults in 3C-SiC by Molecular Dynamics Simulations 347
Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001) 346
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 341
InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires 327
Dynamics of crosshatch patterns in heteroepitaxy 316
"Divide et impera" in detector technology 313
Hexagonal Diamond phase of Si and Ge by nanoindentation 309
Integration of MOSFETs with SiGe dots as stressor material 309
Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations 304
An exceptional thermal strain reduction in Ge suspended layer grown on Si by a tilting pillar architecture 295
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 294
Unraveling the atomic-scale pathways driving pressure-induced phase transitions in silicon 286
Modeling the dynamics of cross-hatch evolution in heteroepitaxy 285
Optical properties of shuffle dislocations in silicon 285
Stability of shuffle and glide dislocation segments with increasing misfit in Ge/Si1-xGex(001) epitaxial layers 283
Vacancy-mediated climbing motion of dislocations in Ge/Si films: atomic-scale insights via molecular dynamics 282
Strain Engineering in Highly Mismatched SiGe/Si Heterostructures 279
Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires 273
Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy 272
Controlling the relaxation mechanism of low strain Si1- x Gex /Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source 271
Vertical and lateral ordering of Ge islands grown on Si(001): Theory and experiments 268
Extended defects in 3C-SiC: Stacking faults, threading partial dislocations, and inverted domain boundaries 268
3D heteroepitaxy of mismatched semiconductors on silicon 266
Hexagonal Si and Ge polytypes for silicon photonics 265
3D heteroepitaxy on patterned Si substrates: a new monolithic integration strategy 264
Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture 257
Perfect crystals grown from imperfect interfaces 256
Space-filling Arrays of Three-Dimensional Epitaxial Ge and Si 1-xGe x Crystals 255
Strained MOSFETs on ordered SiGe dots 252
Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling 250
Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals 250
Detailed Analysis of the Shape-dependent Deformation Field in 3D Ge Islands 248
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 246
Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data 244
Three dimensional heteroepitaxy: A new path for monolithically integrating mismatched materials with silicon 240
Unexpected dominance of vertical dislocations in high-misfit ge/si(001) films and their elimination by deep substrate patterning 240
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 239
Engineered coalescence of three-dimensional Ge microcrystals into high-quality suspended layers on Si pillars 237
Atomic-scale insights on the formation of ordered arrays of edge dislocations in Ge/Si(001) films via molecular dynamics simulations 237
Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling 235
Misfit-Dislocation Distributions in Heteroepitaxy: From Mesoscale Measurements to Individual Defects and Back 235
Modeling the plastic relaxation onset in realistic SiGe islands on Si(001) 230
Crystal free energy of SiC polytypes and stacking faults formation energy from DFT-based lattice-dynamics approach 229
2H-Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core-Shell Nanowires 227
Scaling Hetero-Epitaxy from Layers to Three-Dimensional Crystals 227
Results and challenges in obtaining the hexagonal diamond Si phase by nanoindentation 224
Relaxed SiGe heteroepitaxy on Si with very thin buffer layers: experimental LEPECVD indications and an interpretation based on strain- dependent dislocation nature 224
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy 223
Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation 221
Development of a machine learning interatomic potential for exploring pressure-dependent kinetics of phase transitions in germanium 221
Continuum modeling of heteroepitaxial growth: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing 220
Anisotropic extended misfit dislocations in overcritical SiGe films by local substrate patterning 220
Critical shape and size for dislocation nucleation in si1-xGex islands on Si(001) 219
Fully coherent growth of Ge on free-standing Si(001) nanomesas 214
Strain and strain-release engineering at epitaxial SiGe islands on Si(0 0 1) for microelectronic applications 213
Planar Hexagonal Germanium Grown on Cadmium Sulfide Substrate by Low-Energy Plasma-Enhanced Chemical Vapor Deposition. 212
Self-aligned epitaxy in a mask-less deposition with kinetic and geometric constraints 210
Evolution and Intersection of Extended Defects and Stacking Faults in 3C-SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case 210
Atomistic Mechanisms of dc-hd Phase Transition in Si Nanoindentation 203
Defects in hexagonal Si-Ge nanowires: the extended I3 vs a “virtual” point-like defect 201
Si CMOS compatible, compliant integration of lattice-mismatched semiconductors on Si(001): Example of fully coherent Ge/Si nanostructures 200
Dislocation assessment and their elimination in high-quality Ge microcrystals integrated on deeply patterned Si (001) substrates 199
Dislocation trapping in epitaxial islands, escavated trenches and pits: nanoscale laboratories for simulations and experiments 198
Atomistic simulation of a 60 degrees shuffle dislocation segment migrating in a Ge/SiGe(001) epitaxial film 197
From the crystal free energy of SiC polytypes to the stacking faults formation energy: a DFT-based lattice-dynamics approach. 196
Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns 195
Onset of vertical threading dislocations in Si1-xGex/Si (001) at a critical Ge concentration 192
New approaches and understandings in the growth of cubic silicon carbide 190
Full Picture of Lattice Deformation in a Ge1 − xSnx Micro-Disk by 5D X-ray Diffraction Microscopy 185
Dynamics of cross-hatch evolution in heteroepitaxy 184
Epitaxial Ge-crystal arrays for X-ray detection 182
Burgers Vector Analysis of Vertical Dislocations in Ge Crystals by Large-Angle Convergent Beam Electron Diffraction 181
Theoretical interpretation of tilting-angle maps in heteroepitaxial films 179
Stress engineering of boron doped diamond thin films via micro-fabrication 172
Misfit relaxation in heteroepitaxy: A theoretical method for inferring individual dislocation positions from tilting maps 171
Polytypic quantum wells in Si and Ge: impact of 2D hexagonal inclusions on electronic band structure 167
Author Correction: In-plane selective area InSb–Al nanowire quantum networks (Communications Physics, (2020), 3, 1, (59), 10.1038/s42005-020-0324-4) 166
TEM analysis of Textured Silicon Polymorph Crystals obtained via Nanoindentation and Annealing 165
Modelling the structural origin of defects in hexagonal Ge nanowires: the extended I3 vs a point-like defect 165
Unravelling Atomistic Mechanisms of Pressure-Induced Phase Transitions in Silicon Nanoindentation 161
Impact of Inversion Domain Boundaries on the Electronic Properties of 3C-SiC 161
The Lattice Strain Distribution in GexSn1-x Micro-Disks Investigated at the Sub 100-nm Scale 155
Unveiling Planar Defects in Hexagonal Group IV Materials 153
Origin and Evolution of I3 defects in Hexagonal Silicon and Germanium 150
Three-dimensional EpitaxialSi1-xGex, Ge and SiC Crystals onDeeply Patterned Si substrates 146
Electronic Properties of Extended Defects in Germanium: A First-Principles Study 141
Understanding complex dislocation behavior and reactions in advanced GeSi epitaxy 134
Interaction of Dopants with the I3-Type Basal Stacking Fault in Hexagonal-Diamond Si 133
3C-SiC epitaxy on deeply patterned Si(111) substrates 130
Unraveling Atomistic Mechanisms of Pressure-Induced Phase Transitions in Silicon and Germanium 123
Electronic Properties of Perfect Dislocations in Germanium: A First-Principles Study 123
Totale 23.946
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Categoria #
all - tutte 74.982
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 74.982
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.462 140 133 206 177 60 116 66 83 72 108 103 198
2022/20232.232 250 592 239 254 120 277 28 128 153 42 80 69
2023/20241.393 59 81 41 45 187 333 229 64 140 42 43 129
2024/20253.622 153 429 226 221 298 178 149 181 333 559 308 587
2025/20269.715 775 597 673 748 1.288 521 1.447 453 895 762 672 884
2026/2027229 229 0 0 0 0 0 0 0 0 0 0 0
Totale 24.646