Bicocca Open Archive

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MARZEGALLI, ANNA
 Distribuzione geografica
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Continente #
NA - Nord America 6.780
EU - Europa 3.519
AS - Asia 1.480
AF - Africa 20
SA - Sud America 6
OC - Oceania 5
Continente sconosciuto - Info sul continente non disponibili 4
Totale 11.814
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Nazione #
US - Stati Uniti d'America 6.693
IT - Italia 751
DE - Germania 728
SE - Svezia 555
CN - Cina 525
SG - Singapore 432
IE - Irlanda 349
RU - Federazione Russa 285
UA - Ucraina 243
GB - Regno Unito 212
HK - Hong Kong 178
VN - Vietnam 166
CA - Canada 84
AT - Austria 77
ES - Italia 69
FI - Finlandia 64
FR - Francia 62
IN - India 52
JP - Giappone 49
DK - Danimarca 42
TR - Turchia 29
NL - Olanda 23
BE - Belgio 19
CH - Svizzera 16
ID - Indonesia 15
KR - Corea 13
MA - Marocco 11
CZ - Repubblica Ceca 6
AU - Australia 4
BR - Brasile 4
CI - Costa d'Avorio 4
IR - Iran 4
PL - Polonia 4
BG - Bulgaria 3
PK - Pakistan 3
SA - Arabia Saudita 3
SI - Slovenia 3
TW - Taiwan 3
AR - Argentina 2
EU - Europa 2
GR - Grecia 2
IL - Israele 2
MU - Mauritius 2
MX - Messico 2
NO - Norvegia 2
PH - Filippine 2
A1 - Anonimo 1
A2 - ???statistics.table.value.countryCode.A2??? 1
BD - Bangladesh 1
BZ - Belize 1
EE - Estonia 1
KW - Kuwait 1
LK - Sri Lanka 1
LU - Lussemburgo 1
LV - Lettonia 1
NG - Nigeria 1
NZ - Nuova Zelanda 1
OM - Oman 1
RO - Romania 1
SC - Seychelles 1
TN - Tunisia 1
Totale 11.814
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Città #
Ann Arbor 1.839
Woodbridge 631
Frankfurt am Main 560
Fairfield 501
Chandler 491
Singapore 374
Dublin 333
Houston 329
Wilmington 291
Milan 289
Ashburn 286
Jacksonville 272
Dearborn 181
Seattle 175
Hong Kong 173
Cambridge 164
Santa Clara 161
New York 151
Princeton 151
Dong Ket 92
Guangzhou 88
Nanjing 86
Vienna 71
Altamura 55
Shanghai 55
Lawrence 54
Southend 43
Lachine 40
Beijing 39
San Diego 36
Nanchang 33
Andover 27
Boardman 27
Los Angeles 25
Shenyang 25
Miyamae Ku 23
Paris 20
Hebei 18
Pune 18
Como 17
Tianjin 17
Toronto 17
Umeda 17
Valladolid 17
Jinan 16
Sacramento 16
Vigano San Martino 16
Helsinki 15
Jakarta 15
Ottawa 15
Chicago 14
Jiaxing 14
Ningbo 14
Redmond 14
Taizhou 14
Brussels 13
Zhengzhou 13
London 12
Norwalk 12
Turin 12
Dalmine 11
Kunming 11
Monza 11
Ardea 10
Berlin 10
Falls Church 10
Arcore 9
Changsha 9
Dallas 9
Fremont 9
Malmö 9
Mountain View 9
Munich 9
Rome 9
Dresden 8
Cinisello Balsamo 7
Edmonton 7
Fornovo San Giovanni 7
Hangzhou 7
College Station 6
Grafing 6
Huizen 6
Lanzhou 6
Oxford 6
Spirano 6
Auburn Hills 5
Brescia 5
Calcio 5
Calusco d'Adda 5
Casablanca 5
Cesano Maderno 5
Chiavenna 5
Chiyoda-ku 5
Columbus 5
Desio 5
Eindhoven 5
Lovere 5
San Mateo 5
Sant'ambrogio Di Torino 5
Verdello 5
Totale 8.819
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Nome #
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 292
In-plane selective area InSb–Al nanowire quantum networks 288
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 236
Dynamics of crosshatch patterns in heteroepitaxy 233
"Divide et impera" in detector technology 229
Modeling the dynamics of cross-hatch evolution in heteroepitaxy 223
Multiple stacking fault formation via the evolution of related dislocations by molecular dynamics simulations 221
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 221
Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001) 218
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 217
Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations 215
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 210
Nature and Shape of Stacking Faults in 3C-SiC by Molecular Dynamics Simulations 206
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 201
Stability of shuffle and glide dislocation segments with increasing misfit in Ge/Si1-xGex(001) epitaxial layers 195
Controlling the relaxation mechanism of low strain Si1- x Gex /Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source 194
Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001) 193
Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations 193
Integration of MOSFETs with SiGe dots as stressor material 188
Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy 187
Vertical and lateral ordering of Ge islands grown on Si(001): Theory and experiments 184
Strain Engineering in Highly Mismatched SiGe/Si Heterostructures 184
Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling 178
3D heteroepitaxy of mismatched semiconductors on silicon 177
Optical properties of shuffle dislocations in silicon 176
InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires 172
Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture 167
Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling 164
Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data 159
Strained MOSFETs on ordered SiGe dots 157
Misfit-Dislocation Distributions in Heteroepitaxy: From Mesoscale Measurements to Individual Defects and Back 157
Relaxed SiGe heteroepitaxy on Si with very thin buffer layers: experimental LEPECVD indications and an interpretation based on strain- dependent dislocation nature 156
Unexpected dominance of vertical dislocations in high-misfit ge/si(001) films and their elimination by deep substrate patterning 156
An exceptional thermal strain reduction in Ge suspended layer grown on Si by a tilting pillar architecture 155
Perfect crystals grown from imperfect interfaces 154
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 153
Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals 153
Space-filling Arrays of Three-Dimensional Epitaxial Ge and Si 1-xGe x Crystals 152
Three dimensional heteroepitaxy: A new path for monolithically integrating mismatched materials with silicon 151
Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires 151
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 149
Scaling Hetero-Epitaxy from Layers to Three-Dimensional Crystals 144
Detailed Analysis of the Shape-dependent Deformation Field in 3D Ge Islands 142
Critical shape and size for dislocation nucleation in si1-xGex islands on Si(001) 141
Hexagonal Diamond phase of Si and Ge by nanoindentation 138
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 133
Strain and strain-release engineering at epitaxial SiGe islands on Si(0 0 1) for microelectronic applications 133
Self-aligned epitaxy in a mask-less deposition with kinetic and geometric constraints 133
Anisotropic extended misfit dislocations in overcritical SiGe films by local substrate patterning 133
Crystal free energy of SiC polytypes and stacking faults formation energy from DFT-based lattice-dynamics approach 132
Fully coherent growth of Ge on free-standing Si(001) nanomesas 130
Atomistic simulation of a 60 degrees shuffle dislocation segment migrating in a Ge/SiGe(001) epitaxial film 129
Modeling the plastic relaxation onset in realistic SiGe islands on Si(001) 129
Onset of vertical threading dislocations in Si1-xGex/Si (001) at a critical Ge concentration 128
Vacancy-mediated climbing motion of dislocations in Ge/Si films: atomic-scale insights via molecular dynamics 128
3D heteroepitaxy on patterned Si substrates: a new monolithic integration strategy 124
Continuum modeling of heteroepitaxial growth: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing 124
Si CMOS compatible, compliant integration of lattice-mismatched semiconductors on Si(001): Example of fully coherent Ge/Si nanostructures 123
Burgers Vector Analysis of Vertical Dislocations in Ge Crystals by Large-Angle Convergent Beam Electron Diffraction 122
From the crystal free energy of SiC polytypes to the stacking faults formation energy: a DFT-based lattice-dynamics approach. 122
Atomic-scale insights on the formation of ordered arrays of edge dislocations in Ge/Si(001) films via molecular dynamics simulations 118
Engineered coalescence of three-dimensional Ge microcrystals into high-quality suspended layers on Si pillars 112
Theoretical interpretation of tilting-angle maps in heteroepitaxial films 111
Dislocation trapping in epitaxial islands, escavated trenches and pits: nanoscale laboratories for simulations and experiments 111
Epitaxial Ge-crystal arrays for X-ray detection 108
Hexagonal Si and Ge polytypes for silicon photonics 105
Dynamics of cross-hatch evolution in heteroepitaxy 105
New approaches and understandings in the growth of cubic silicon carbide 101
Extended defects in 3C-SiC: Stacking faults, threading partial dislocations, and inverted domain boundaries 97
Misfit relaxation in heteroepitaxy: A theoretical method for inferring individual dislocation positions from tilting maps 92
Dislocation assessment and their elimination in high-quality Ge microcrystals integrated on deeply patterned Si (001) substrates 91
Three-dimensional EpitaxialSi1-xGex, Ge and SiC Crystals onDeeply Patterned Si substrates 84
Understanding complex dislocation behavior and reactions in advanced GeSi epitaxy 81
Stress engineering of boron doped diamond thin films via micro-fabrication 80
Evolution and Intersection of Extended Defects and Stacking Faults in 3C-SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case 77
Unveiling Planar Defects in Hexagonal Group IV Materials 75
Defects in hexagonal Si-Ge nanowires: the extended I3 vs a “virtual” point-like defect 71
2H-Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core-Shell Nanowires 63
Impact of Inversion Domain Boundaries on the Electronic Properties of 3C-SiC 63
Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns 62
3C-SiC epitaxy on deeply patterned Si(111) substrates 57
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy 56
Modelling the structural origin of defects in hexagonal Ge nanowires: the extended I3 vs a point-like defect 41
Author Correction: In-plane selective area InSb–Al nanowire quantum networks (Communications Physics, (2020), 3, 1, (59), 10.1038/s42005-020-0324-4) 40
Results and challenges in obtaining the hexagonal diamond Si phase by nanoindentation 30
Atomistic Mechanisms of dc-hd Phase Transition in Si Nanoindentation 22
Full Picture of Lattice Deformation in a Ge1 − xSnx Micro-Disk by 5D X-ray Diffraction Microscopy 20
Development of a machine learning interatomic potential for exploring pressure-dependent kinetics of phase transitions in germanium 14
Polytypic quantum wells in Si and Ge: impact of 2D hexagonal inclusions on electronic band structure 13
Unravelling Atomistic Mechanisms of Pressure-Induced Phase Transitions in Silicon Nanoindentation 7
The Lattice Strain Distribution in GexSn1-x Micro-Disks Investigated at the Sub 100-nm Scale 7
Totale 12.367
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Categoria #
all - tutte 39.021
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 39.021
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20201.208 0 0 0 0 150 209 252 125 179 124 134 35
2020/20211.836 70 60 165 171 112 144 138 162 173 186 141 314
2021/20221.462 140 133 206 177 60 116 66 83 72 108 103 198
2022/20232.232 250 592 239 254 120 277 28 128 153 42 80 69
2023/20241.393 59 81 41 45 187 333 229 64 140 42 43 129
2024/20251.287 153 429 226 221 258 0 0 0 0 0 0 0
Totale 12.367