Bicocca Open Archive

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MARZEGALLI, ANNA
 Distribuzione geografica
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Continente #
NA - Nord America 6.575
EU - Europa 3.468
AS - Asia 1.452
AF - Africa 20
SA - Sud America 6
OC - Oceania 5
Continente sconosciuto - Info sul continente non disponibili 4
Totale 11.530
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Nazione #
US - Stati Uniti d'America 6.490
DE - Germania 722
IT - Italia 716
SE - Svezia 555
CN - Cina 515
SG - Singapore 416
IE - Irlanda 349
RU - Federazione Russa 285
UA - Ucraina 243
GB - Regno Unito 210
HK - Hong Kong 177
VN - Vietnam 166
CA - Canada 84
AT - Austria 77
ES - Italia 67
FI - Finlandia 64
FR - Francia 59
IN - India 52
JP - Giappone 49
DK - Danimarca 42
TR - Turchia 29
NL - Olanda 21
BE - Belgio 19
CH - Svizzera 16
ID - Indonesia 15
KR - Corea 13
MA - Marocco 11
CZ - Repubblica Ceca 6
AU - Australia 4
BR - Brasile 4
CI - Costa d'Avorio 4
IR - Iran 4
PL - Polonia 4
BG - Bulgaria 3
PK - Pakistan 3
SA - Arabia Saudita 3
TW - Taiwan 3
AR - Argentina 2
EU - Europa 2
GR - Grecia 2
IL - Israele 2
MU - Mauritius 2
NO - Norvegia 2
PH - Filippine 2
SI - Slovenia 2
A1 - Anonimo 1
A2 - ???statistics.table.value.countryCode.A2??? 1
BD - Bangladesh 1
BZ - Belize 1
EE - Estonia 1
LK - Sri Lanka 1
LU - Lussemburgo 1
LV - Lettonia 1
NG - Nigeria 1
NZ - Nuova Zelanda 1
OM - Oman 1
RO - Romania 1
SC - Seychelles 1
TN - Tunisia 1
Totale 11.530
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Città #
Ann Arbor 1.839
Woodbridge 631
Frankfurt am Main 560
Fairfield 501
Chandler 491
Singapore 359
Dublin 333
Houston 329
Wilmington 291
Milan 282
Ashburn 277
Jacksonville 272
Dearborn 181
Seattle 175
Hong Kong 172
Cambridge 164
New York 151
Princeton 151
Dong Ket 92
Guangzhou 86
Nanjing 86
Santa Clara 71
Vienna 71
Altamura 55
Shanghai 55
Lawrence 54
Southend 43
Lachine 40
Beijing 38
San Diego 36
Nanchang 33
Andover 27
Boardman 27
Shenyang 25
Los Angeles 24
Miyamae Ku 23
Paris 20
Hebei 18
Pune 18
Tianjin 17
Toronto 17
Umeda 17
Valladolid 17
Jinan 16
Sacramento 16
Vigano San Martino 16
Helsinki 15
Jakarta 15
Ottawa 15
Chicago 14
Jiaxing 14
Ningbo 14
Redmond 14
Taizhou 14
Brussels 13
Zhengzhou 13
Norwalk 12
Turin 12
Dalmine 11
Kunming 11
London 11
Monza 11
Ardea 10
Berlin 10
Falls Church 10
Arcore 9
Changsha 9
Dallas 9
Fremont 9
Malmö 9
Mountain View 9
Rome 9
Dresden 8
Cinisello Balsamo 7
Como 7
Edmonton 7
Fornovo San Giovanni 7
Hangzhou 7
College Station 6
Grafing 6
Huizen 6
Lanzhou 6
Oxford 6
Auburn Hills 5
Brescia 5
Calcio 5
Calusco d'Adda 5
Casablanca 5
Cesano Maderno 5
Chiavenna 5
Chiyoda-ku 5
Columbus 5
Desio 5
Lovere 5
San Mateo 5
Sant'ambrogio Di Torino 5
Verdello 5
Abidjan 4
Bergamo 4
Calcinate 4
Totale 8.674
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Nome #
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 289
In-plane selective area InSb–Al nanowire quantum networks 286
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 234
Dynamics of crosshatch patterns in heteroepitaxy 231
"Divide et impera" in detector technology 225
Modeling the dynamics of cross-hatch evolution in heteroepitaxy 220
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 219
Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001) 216
Multiple stacking fault formation via the evolution of related dislocations by molecular dynamics simulations 215
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 214
Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations 213
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 208
Nature and Shape of Stacking Faults in 3C-SiC by Molecular Dynamics Simulations 203
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 198
Stability of shuffle and glide dislocation segments with increasing misfit in Ge/Si1-xGex(001) epitaxial layers 193
Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001) 191
Controlling the relaxation mechanism of low strain Si1- x Gex /Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source 191
Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations 189
Integration of MOSFETs with SiGe dots as stressor material 185
Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy 185
Vertical and lateral ordering of Ge islands grown on Si(001): Theory and experiments 182
Strain Engineering in Highly Mismatched SiGe/Si Heterostructures 181
Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling 176
3D heteroepitaxy of mismatched semiconductors on silicon 175
Optical properties of shuffle dislocations in silicon 174
InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires 169
Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture 164
Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling 162
Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data 157
Strained MOSFETs on ordered SiGe dots 155
Misfit-Dislocation Distributions in Heteroepitaxy: From Mesoscale Measurements to Individual Defects and Back 155
Relaxed SiGe heteroepitaxy on Si with very thin buffer layers: experimental LEPECVD indications and an interpretation based on strain- dependent dislocation nature 154
Unexpected dominance of vertical dislocations in high-misfit ge/si(001) films and their elimination by deep substrate patterning 153
Perfect crystals grown from imperfect interfaces 152
An exceptional thermal strain reduction in Ge suspended layer grown on Si by a tilting pillar architecture 151
Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals 151
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 150
Three dimensional heteroepitaxy: A new path for monolithically integrating mismatched materials with silicon 149
Space-filling Arrays of Three-Dimensional Epitaxial Ge and Si 1-xGe x Crystals 149
Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires 149
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 145
Scaling Hetero-Epitaxy from Layers to Three-Dimensional Crystals 141
Critical shape and size for dislocation nucleation in si1-xGex islands on Si(001) 139
Detailed Analysis of the Shape-dependent Deformation Field in 3D Ge Islands 139
Hexagonal Diamond phase of Si and Ge by nanoindentation 131
Strain and strain-release engineering at epitaxial SiGe islands on Si(0 0 1) for microelectronic applications 131
Self-aligned epitaxy in a mask-less deposition with kinetic and geometric constraints 131
Anisotropic extended misfit dislocations in overcritical SiGe films by local substrate patterning 130
Crystal free energy of SiC polytypes and stacking faults formation energy from DFT-based lattice-dynamics approach 130
Atomistic simulation of a 60 degrees shuffle dislocation segment migrating in a Ge/SiGe(001) epitaxial film 127
Modeling the plastic relaxation onset in realistic SiGe islands on Si(001) 127
Fully coherent growth of Ge on free-standing Si(001) nanomesas 126
Onset of vertical threading dislocations in Si1-xGex/Si (001) at a critical Ge concentration 125
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 124
Continuum modeling of heteroepitaxial growth: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing 122
Vacancy-mediated climbing motion of dislocations in Ge/Si films: atomic-scale insights via molecular dynamics 122
3D heteroepitaxy on patterned Si substrates: a new monolithic integration strategy 121
Si CMOS compatible, compliant integration of lattice-mismatched semiconductors on Si(001): Example of fully coherent Ge/Si nanostructures 121
Burgers Vector Analysis of Vertical Dislocations in Ge Crystals by Large-Angle Convergent Beam Electron Diffraction 120
From the crystal free energy of SiC polytypes to the stacking faults formation energy: a DFT-based lattice-dynamics approach. 119
Atomic-scale insights on the formation of ordered arrays of edge dislocations in Ge/Si(001) films via molecular dynamics simulations 116
Engineered coalescence of three-dimensional Ge microcrystals into high-quality suspended layers on Si pillars 109
Theoretical interpretation of tilting-angle maps in heteroepitaxial films 109
Dislocation trapping in epitaxial islands, escavated trenches and pits: nanoscale laboratories for simulations and experiments 109
Epitaxial Ge-crystal arrays for X-ray detection 106
Dynamics of cross-hatch evolution in heteroepitaxy 102
New approaches and understandings in the growth of cubic silicon carbide 99
Hexagonal Si and Ge polytypes for silicon photonics 97
Extended defects in 3C-SiC: Stacking faults, threading partial dislocations, and inverted domain boundaries 95
Misfit relaxation in heteroepitaxy: A theoretical method for inferring individual dislocation positions from tilting maps 90
Dislocation assessment and their elimination in high-quality Ge microcrystals integrated on deeply patterned Si (001) substrates 88
Three-dimensional EpitaxialSi1-xGex, Ge and SiC Crystals onDeeply Patterned Si substrates 82
Understanding complex dislocation behavior and reactions in advanced GeSi epitaxy 79
Stress engineering of boron doped diamond thin films via micro-fabrication 78
Unveiling Planar Defects in Hexagonal Group IV Materials 73
Evolution and Intersection of Extended Defects and Stacking Faults in 3C-SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case 73
Defects in hexagonal Si-Ge nanowires: the extended I3 vs a “virtual” point-like defect 67
Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns 59
Impact of Inversion Domain Boundaries on the Electronic Properties of 3C-SiC 59
3C-SiC epitaxy on deeply patterned Si(111) substrates 55
2H-Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core-Shell Nanowires 54
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy 52
Author Correction: In-plane selective area InSb–Al nanowire quantum networks (Communications Physics, (2020), 3, 1, (59), 10.1038/s42005-020-0324-4) 38
Modelling the structural origin of defects in hexagonal Ge nanowires: the extended I3 vs a point-like defect 38
Results and challenges in obtaining the hexagonal diamond Si phase by nanoindentation 17
Development of a machine learning interatomic potential for exploring pressure-dependent kinetics of phase transitions in germanium 11
Atomistic Mechanisms of dc-hd Phase Transition in Si Nanoindentation 10
Full Picture of Lattice Deformation in a Ge1 − xSnx Micro-Disk by 5D X-ray Diffraction Microscopy 10
Polytypic quantum wells in Si and Ge: impact of 2D hexagonal inclusions on electronic band structure 9
Totale 12.068
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Categoria #
all - tutte 37.419
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 37.419
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20201.343 0 0 0 135 150 209 252 125 179 124 134 35
2020/20211.836 70 60 165 171 112 144 138 162 173 186 141 314
2021/20221.462 140 133 206 177 60 116 66 83 72 108 103 198
2022/20232.232 250 592 239 254 120 277 28 128 153 42 80 69
2023/20241.393 59 81 41 45 187 333 229 64 140 42 43 129
2024/2025988 153 429 226 180 0 0 0 0 0 0 0 0
Totale 12.068