A detailed investigation of plastic relaxation onset in heteroepitaxial SiGe islands on Si(001) is presented. The strain field induced by a straight misfit-dislocation segment is modeled by finite-element-method (FEM) calculations in three dimensions, fully taking into account the interaction with the multifaceted free surfaces of realistic islands. The total elastic energies before and after the placement of a 60° dislocation segment in the most favorable position are therefore evaluated by a full FEM approach, for different island sizes and compositions. The critical volumes with composition for inserting the dislocation are finally obtained and successfully compared with the data in a report by Marzegalli [Phys. Rev. Lett. 99, 235505 (2007)], where experimental values are compared to a simpler approach. © 2008 The American Physical Society.

Gatti, R., Marzegalli, A., Zinovyev, V., Montalenti, F., & Miglio, L. (2008). Modeling the plastic relaxation onset in realistic SiGe islands on Si(001). PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 78, 184104 [10.1103/PhysRevB.78.184104].

Modeling the plastic relaxation onset in realistic SiGe islands on Si(001)

GATTI, RICCARDO;MARZEGALLI, ANNA;MONTALENTI, FRANCESCO CIMBRO MATTIA;MIGLIO, LEONIDA
2008

Abstract

A detailed investigation of plastic relaxation onset in heteroepitaxial SiGe islands on Si(001) is presented. The strain field induced by a straight misfit-dislocation segment is modeled by finite-element-method (FEM) calculations in three dimensions, fully taking into account the interaction with the multifaceted free surfaces of realistic islands. The total elastic energies before and after the placement of a 60° dislocation segment in the most favorable position are therefore evaluated by a full FEM approach, for different island sizes and compositions. The critical volumes with composition for inserting the dislocation are finally obtained and successfully compared with the data in a report by Marzegalli [Phys. Rev. Lett. 99, 235505 (2007)], where experimental values are compared to a simpler approach. © 2008 The American Physical Society.
Articolo in rivista - Articolo scientifico
Elastic relaxation, Plastic relaxation, Nanometric island, epitaxy
English
184104
Gatti, R., Marzegalli, A., Zinovyev, V., Montalenti, F., & Miglio, L. (2008). Modeling the plastic relaxation onset in realistic SiGe islands on Si(001). PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 78, 184104 [10.1103/PhysRevB.78.184104].
Gatti, R; Marzegalli, A; Zinovyev, V; Montalenti, F; Miglio, L
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/10281/6206
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