A detailed investigation of plastic relaxation onset in heteroepitaxial SiGe islands on Si(001) is presented. The strain field induced by a straight misfit-dislocation segment is modeled by finite-element-method (FEM) calculations in three dimensions, fully taking into account the interaction with the multifaceted free surfaces of realistic islands. The total elastic energies before and after the placement of a 60° dislocation segment in the most favorable position are therefore evaluated by a full FEM approach, for different island sizes and compositions. The critical volumes with composition for inserting the dislocation are finally obtained and successfully compared with the data in a report by Marzegalli [Phys. Rev. Lett. 99, 235505 (2007)], where experimental values are compared to a simpler approach. © 2008 The American Physical Society.
Gatti, R., Marzegalli, A., Zinovyev, V.A., Montalenti, F., & Miglio, L. (2008). Modeling the plastic relaxation onset in realistic SiGe islands on Si(001). PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 78, 184104.
Citazione: | Gatti, R., Marzegalli, A., Zinovyev, V.A., Montalenti, F., & Miglio, L. (2008). Modeling the plastic relaxation onset in realistic SiGe islands on Si(001). PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 78, 184104. |
Tipo: | Articolo in rivista - Articolo scientifico |
Carattere della pubblicazione: | Scientifica |
Titolo: | Modeling the plastic relaxation onset in realistic SiGe islands on Si(001) |
Autori: | Gatti, R; Marzegalli, A; Zinovyev, VA; Montalenti, F; Miglio, L |
Autori: | |
Data di pubblicazione: | nov-2008 |
Lingua: | English |
Rivista: | PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1103/PhysRevB.78.184104 |
Appare nelle tipologie: | 01 - Articolo su rivista |
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