Sfoglia per Autore
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment
2018 Albani, M; Ghisalberti, L; Bergamaschini, R; Friedl, M; Salvalaglio, M; Voigt, A; Montalenti, F; Tütüncüoglu, G; Fontcuberta i Morral, A; Miglio, L
Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires
2018 Albani, M; Assali, S; Verheijen, M; Koelling, S; Bergamaschini, R; Pezzoli, F; Bakkers, E; Miglio, L
Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture
2018 Albani, M; Marzegalli, A; Bergamaschini, R; Mauceri, M; Crippa, D; La Via, F; Von Känel, H; Miglio, L
Twofold origin of strain-induced bending in core-shell nanowires: the GaP/InGaP case
2018 Gagliano, L; Albani, M; Verheijen, M; Bakkers, E; Miglio, L
Dislocation-free SiGe/Si heterostructures
2018 Montalenti, F; Rovaris, F; Bergamaschini, R; Miglio, L; Salvalaglio, M; Isella, G; Isa, F; von Känel, H
Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals
2018 Meduňa, M; Isa, F; Jung, A; Marzegalli, A; Albani, M; Isella, G; Zweiacker, K; Miglio, L; von Känel, H
Site-controlled natural GaAs(111) quantum dots fabricated on vertical GaAs/Ge microcrystals on deeply patterned Si(001) substrates
2017 Biccari, F; Esposito, L; Mannucci, C; Taboada, A; Bietti, S; Ballabio, A; Fedorov, A; Isella, G; Von Känel, H; Miglio, L; Sanguinetti, S; Vinattieri, A; Gurioli, M
Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001)
2017 Marzegalli, A; Cortinovis, A; BASSO BASSET, F; Bonera, E; Pezzoli, F; Scaccabarozzi, A; Isa, F; Isella, G; Zaumseil, P; Capellini, G; Schroeder, T; Miglio, L
GaAs/AlGaAs heterostructures on suspended Ge epilayers on nominal (001) deeply patterned silicon substrates
2017 Bietti, S; Ballabio, A; Esposito, L; Fedorov, A; Scaccabarozzi, A; Vinattieri, A; Biccari, F; Nemcsics, Á; Tóth, L; Gurioli, M; Isella, G; Miglio, L; Sanguinetti, S
Modeling semiconductor heteroepitaxy: a continuum approach
2017 Albani, M; Bergamaschini, R; Rovaris, F; Miglio, L; Montalenti, F
Strain relaxation in semiconductor core/shell nanowires
2017 Albani, M; Bergamaschini, R; Gagliano, L; Assali, S; Verheijen, M; Bakkers, E; Miglio, L
Strain and strain-driven effects in coaxial nanowires
2017 Miglio, L; Albani, M; Bergamaschini, R; Gagliano, L; Assali, S; Verheijen, M; Bakkers, E
Understanding the kinetics segregation in core-shell nanowires: a phase-field approach
2017 Bergamaschini, R; Albani, M; Montalenti, F; Miglio, L
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film
2017 Salvalaglio, M; Bergamaschini, R; Backofen, R; Voigt, A; Montalenti, F; Miglio, L
Stacking fault analysis of epitaxial 3C-SiC on Si(001) ridges
2016 Meduna, M; Kreiliger, T; Prieto, I; Mauceri, M; Puglisi, M; Mancarella, F; La Via, F; Crippa, D; Miglio, L; von Kanel, H
3C-SiC epitaxy on deeply patterned Si(111) substrates
2016 Kreiliger, T; Mauceri, M; Puglisi, M; Mancarella, F; La Via, F; Crippa, D; Kaplan, W; Schoner, A; Marzegalli, A; Miglio, L; von Kanel, H
GaAs/Ge crystals grown on Si substrates patterned down to the micron scale
2016 Taboada, A; Meduňa, M; Salvalaglio, M; Isa, F; Kreiliger, T; Falub, C; Barthazy Meier, E; Müller, E; Miglio, L; Isella, G; von Känel, H
Dislocation recombination and surface passivation of Ge micro-crystals on Si
2016 Pezzoli, F; Giorgioni, A; Gallacher, K; Isa, F; Biagioni, P; Millar, R; Gatti, E; Grilli, E; Isella, G; Paul, D; Miglio, L
Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates
2016 Pezzoli, F; Giorgioni, A; Gallacher, K; Isa, F; Biagioni, P; Millar, R; Gatti, E; Grilli, E; Bonera, E; Isella, G; Paul, D; Miglio, L
Kinetic growth mode of epitaxial GaAs on Si(001) micro-pillars
2016 Bergamaschini, R; Bietti, S; Castellano, A; Frigeri, C; Falub, C; Scaccabarozzi, A; Bollani, M; Von Känel, H; Miglio, L; Sanguinetti, S
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