FANCIULLI, MARCO
 Distribuzione geografica
Continente #
NA - Nord America 11.873
EU - Europa 4.765
AS - Asia 2.174
SA - Sud America 13
AF - Africa 12
Continente sconosciuto - Info sul continente non disponibili 6
OC - Oceania 3
Totale 18.846
Nazione #
US - Stati Uniti d'America 11.625
CN - Cina 913
DE - Germania 859
IT - Italia 799
SE - Svezia 560
IE - Irlanda 555
UA - Ucraina 521
RU - Federazione Russa 514
SG - Singapore 504
GB - Regno Unito 316
HK - Hong Kong 286
VN - Vietnam 277
CA - Canada 247
FI - Finlandia 171
FR - Francia 127
AT - Austria 101
NL - Olanda 86
IN - India 70
DK - Danimarca 58
BE - Belgio 51
TR - Turchia 33
JP - Giappone 23
KR - Corea 17
ID - Indonesia 14
BR - Brasile 13
PK - Pakistan 12
CZ - Repubblica Ceca 11
IR - Iran 11
CH - Svizzera 8
EU - Europa 5
BJ - Benin 4
EE - Estonia 4
PL - Polonia 4
TW - Taiwan 4
CI - Costa d'Avorio 3
DZ - Algeria 3
PT - Portogallo 3
AU - Australia 2
BG - Bulgaria 2
ES - Italia 2
GR - Grecia 2
HU - Ungheria 2
IL - Israele 2
IQ - Iraq 2
MU - Mauritius 2
NO - Norvegia 2
PH - Filippine 2
RS - Serbia 2
SK - Slovacchia (Repubblica Slovacca) 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AZ - Azerbaigian 1
HR - Croazia 1
KG - Kirghizistan 1
KZ - Kazakistan 1
LT - Lituania 1
MX - Messico 1
MY - Malesia 1
NZ - Nuova Zelanda 1
RO - Romania 1
Totale 18.846
Città #
Ann Arbor 2.698
Woodbridge 1.352
Fairfield 1.078
Houston 905
Wilmington 684
Jacksonville 616
Chandler 569
Frankfurt am Main 569
Dublin 522
Ashburn 517
Seattle 474
Singapore 439
Cambridge 383
Dearborn 323
Hong Kong 281
New York 270
Princeton 264
Milan 198
Nanjing 170
Dong Ket 158
Altamura 142
Lawrence 121
Hangzhou 113
Lachine 109
Beijing 100
Shanghai 97
Vienna 97
San Diego 88
Santa Clara 83
Toronto 83
Nanchang 62
Helsinki 48
Shenyang 47
Hebei 42
Jiaxing 41
Ottawa 41
Guangzhou 40
Andover 39
Huizen 36
London 32
Norwalk 31
Jinan 30
Brussels 27
Grafing 27
Mountain View 26
Rome 25
Los Angeles 24
Boardman 23
Florence 23
Sacramento 23
Tianjin 23
Changsha 21
Pune 21
Falls Church 20
Pisa 20
Hanoi 18
Leuven 17
Southend 17
Kunming 16
Dallas 15
Fremont 14
Taizhou 14
Eindhoven 13
Hefei 13
Jakarta 13
Ardea 12
Gif-sur-yvette 12
Lappeenranta 12
Munich 12
Nürnberg 12
Romola 12
Amsterdam 11
Desio 11
Edmonton 11
Redmond 11
University Park 11
Chicago 10
Ningbo 10
Trieste 10
Zhengzhou 10
Berlin 9
Lanzhou 9
Sialkot 9
Bari 8
São Paulo 8
Turin 8
Auburn Hills 7
Bologna 7
Carate Brianza 7
Duncan 7
Melzo 7
Monza 7
Washington 7
Napoli 6
Council Bluffs 5
Genoa 5
Genova 5
Pioltello 5
San Mateo 5
Seveso 5
Totale 14.748
Nome #
Bright Blue Emitting Cu-Doped Cs2ZnCl4 Colloidal Nanocrystals 369
Ferromagnetic resonance of Co thin films grown by atomic layer deposition on the Sb2Te3 topological insulator 344
ALD growth of ultra-thin Co layers on the topological insulator Sb2Te3 336
Fe/Sb2Te3 Interface Reconstruction through Mild Thermal Annealing 316
Trap-Mediated Two-Step Sensitization of Manganese Dopants in Perovskite Nanocrystals 306
Electron Spin Resonance of conduction electrons in Ge/SiGe quantum wells 297
Silicene field-effect transistors operating at room temperature 293
Ambient atmosphere laser-induced local ripening of MoS2 nanoparticles 271
Influence of doping elements on the formation rate of silicon nanowires by silver-assisted chemical etching 269
Electrically Detected Magnetic Resonance of Donors and Interfacial Defects in Silicon Nanowires 268
Probing two-level systems with electron spin inversion recovery of defects at the Si/SiO2 interface 251
Hindering the Oxidation of Silicene with Non-Reactive Encapsulation 201
Optical and Magneto-Optical Properties of Donor-Bound Excitons in Vacancy-Engineered Colloidal Nanocrystals 201
Thermal resistance measurement of In3SbTe2 nanowires 200
Local Electronic Properties of Corrugated Silicene Phases 181
Colloidal Synthesis of Double Perovskite Cs2AgInCl6 and Mn-Doped Cs2AgInCl6 Nanocrystals 181
Getting through the Nature of Silicene: An sp(2)-sp(3) Two-Dimensional Silicon Nanosheet 176
Exploring the morphological and electronic properties of silicene superstructures 176
Analysis of hyperfine structure in chalcogen-doped silicon and germanium nanowires 173
Microscopic environment of Fe in epitaxially stabilized c-FeSi 171
Charge dynamics of a single donor coupled to a few-electron quantum dot in silicon 169
Evidence of Trigonal Dangling Bonds at the Ge(111)/Oxide Interface by Electrically Detected Magnetic Resonance 168
High-k dielectrics for CMOS and emerging logic devices 166
Effective Hamiltonian for two interacting double-dot exchange-only qubits and their controlled-NOT operations 165
Electrically detected magnetic resonance study of the Ge dangling bonds at the Ge(111)/GeO2 interface after capping with Al2O3 layer 164
Long-lived conduction electron spins in Ge quantum wells 163
Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag(111) 162
Electrically Detected Conduction Electron Spin Resonance in Bulk Germanium and Germanium Quantum Wells 162
Low power phase change memory switching of ultra-thin In3Sb1Te2 nanowires 161
Negative-U trapping centers evidenced by admittance spectroscopy at the Ge/GeO2 interface 158
High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors 154
Effect of Electric Dipoles on Fermi Level Positioning at the Interface between Ultrathin Al2O3 Films and Differently Reconstructed In0.53Ga0.47As(001) Surfaces 153
Al2O3 stacks on In0.53Ga0.47As substrates: In situ investigation of the interface 153
Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells 152
Defects and dopants in silicon nanowires produced by metal-assisted chemical etching 151
A Viable Route to Enhance Permittivity of Gate Dielectrics on In0.53Ga0.47As(001): Trimethylaluminum-Based Atomic Layer Deposition of MeO2 (Me = Zr, Hf) 149
Vibrational properties of epitaxial silicene layers on (111) Ag 148
MOCVD growth and structural characterization of In-Sb-Te nanowires 147
Role of the Oxygen Content in the GeO2 Passivation of Ge Substrates as a Function of the Oxidizer 146
Valley blockade and multielectron spin-valley Kondo effect in silicon 146
Strong confinement-induced engineering of the g-factor and lifetime of conduction electron spins in Ge quantum wells 146
Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode 144
Influence of the oxidizing species on the Ge dangling bonds at the (100)Ge/GeO2 interface 143
Pulsed laser deposition of ultrathin BaTiO3/Fe bi-layers: Structural characterization and piezoelectric response 143
Defects and Dopants in Silicon and Germanium Nanowires 143
Influence of the oxidation temperature on the non-trigonal Ge dangling bonds at the (100)Ge/GeO2 interface 141
Spin-dependent recombination and single charge dynamics in silicon nanostructrures 141
Electron Spin Resonance of conduction electrons in Ge/SiGe quantum wells 141
Metal Organic Chemical Vapor Deposition of Phase Change Ge1Sb2Te4 Nanowires 140
Theoretical aspects of graphene-like group IV semiconductors 139
Direct observation at nanoscale of resistance switching in NiO layers by conductive-atomic force microscopy 139
Towards Oxide Electronics: a Roadmap 139
EPR and UV-Raman study of BPSG thin films: structure and defects 138
ToF-SIMS study of phosphorus diffusion in low-dimensional silicon structures 138
Effect on Al:MO2/In0.53Ga0.47As interface (M = Hf, Zr) of trimethyl-aluminum pre-treatment during atomic layer deposition 138
Geometrical Effects on Valley-Orbital Filling Patterns in Silicon Quantum Dots for Robust Qubit Implementation 137
Self-organized layered structure in epitaxially stabilized FeSi 137
Atomic Layer Deposition of Al-Doped ZrO2 Thin Films as Gate Dielectric for In0.53Ga0.47As 135
Chemical vapor deposition growth of Fe3O4 thin films and Fe/Fe3O4 bi-layers for their integration in magnetic tunnel junctions 135
Band alignment at the La2Hf2O7/(001)Si interface 134
The fabrication of tunable nanoporous oxide surfaces by block copolymer lithography and atomic layer deposition 133
Engineering the electronic properties of silicene by tuning the composition of MoX2 and GaX (X = S,Se,Te) chalchogenide templates 133
Atomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applications 133
Donor Wave Functions Delocalization in Silicon Nanowires: The Peculiar [011] Orientation 131
Chemical, structural and magnetic properties of the Fe/Sb2Te3 interface 131
Synthesis of multiferroic Er-Fe-O thin films by atomic layer and chemical vapor deposition 130
Two-dimensional Si nanosheets with local hexagonal structure on a MoS 2 surface 130
Confinement Effects and Hyperfine Structure in Se Doped Silicon Nanowires 129
The effect of a ferromagnetic Gd marker on the effective work function of Fe in contact with Al2O3/Si 128
Phonon-induced relaxation and decoherence times of the hybrid qubit in silicon quantum dots 127
Adiabatic charge control in a single donor atom transistor 126
Fe charge state adjustment in ZnO upon ion implantation 125
Low-temperature atomic layer deposition of MgO thin films on Si 125
Microwave Effects in Silicon Low Dimensional Nanostructures 124
Raman spectroscopy for a micrometric and tensorial analysis of stress in silicon 124
Electron spin resonance of substitutional nitrogen in silicon 123
Ab initio study of magnetic properties of complexes formed by an Fe impurity and an intrinsic interstitial defect in ZnO 122
Synthesis of magnetic tunnel junctions with full in situ atomic layer and chemical vapor deposition processes 121
Effective Hamiltonian for the hybrid double quantum dot qubit 121
Atomic layer deposited TiO2 for implantable brain-chip interfacing devices 119
Electronic Properties of Pristine and Se Doped [001] Silicon Nanowires: An Ab Initio Study 118
Defects and Dopants in Silicon and Germanium Nanowires 117
Luminescence from beta-FeSi2 precipitates in Si. I. Morphology and epitaxial relationship 116
Dielectric properties of high-kappa oxides: Theory and experiment for Lu-2O-3 115
Spin-lattice relaxation processes of transition metal ions in a heavily cobalt doped ZnO: Phonon heating effect 115
Structure evolution of atomic layer deposition grown ZrO2 films by deep-ultra-violet Raman and far-infrared spectroscopies 114
Chemical nature of the passivation layer depending on the oxidizing agent in Gd2O3/GeO2/Ge stacks grown by molecular beam deposition 114
Optical Properties of Donor-Bound Excitons in Vacancy-Engineered Colloidal Nanocrystals 113
Structural and chemical stabilization of the epitaxial silicene 113
Few electron limit of n-type metal oxide semiconductor single electron transistors 112
Atomic layer deposition of Lu silicate films using {[(Me3Si)(2)N](3)Lu} 111
Phosphorous-oxygen hole centers in phosphosilicate glass films 110
Combining high resolution and tensorial analysis in Raman stress measurements of silicon 109
Combining HRTEM-EELS nano-analysis with capacitance-voltage measurements to evaluate high-κ thin films deposited on Si and Ge as candidate for future gate dielectrics 109
Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices 108
Raman stress maps from finite-element models of silicon structures 108
Raman spectroscopy of strain in subwavelength microelectronic devices 108
Silicon nanowires: Donors, surfaces and interface defects 108
Synthesis and characterization of DyScO films deposited on Si and Si-rich SiN by atomic layer deposition for blocking layer replacement in TANOS stack 107
Time of flight secondary ion mass spectrometry study of silicon nanoclusters embedded in thin silicon oxide layers 107
Totale 15.675
Categoria #
all - tutte 65.499
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 65.499


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20202.507 0 0 0 265 305 395 476 223 375 163 231 74
2020/20212.844 159 106 260 317 161 183 232 253 240 325 152 456
2021/20222.176 185 223 316 133 95 168 185 135 121 147 159 309
2022/20232.858 377 826 309 197 208 402 38 116 197 41 85 62
2023/20241.913 56 54 80 52 262 479 300 102 219 43 39 227
2024/20251.326 324 597 221 184 0 0 0 0 0 0 0 0
Totale 19.410