Bicocca Open Archive

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FANCIULLI, MARCO
 Distribuzione geografica
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Continente #
NA - Nord America 20.565
AS - Asia 9.974
EU - Europa 9.369
SA - Sud America 1.428
Continente sconosciuto - Info sul continente non disponibili 633
AF - Africa 231
OC - Oceania 13
Totale 42.213
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Nazione #
US - Stati Uniti d'America 19.365
SG - Singapore 3.494
SE - Svezia 2.500
CN - Cina 2.220
IT - Italia 1.698
HK - Hong Kong 1.388
VN - Vietnam 1.235
RU - Federazione Russa 1.206
DE - Germania 1.081
BR - Brasile 1.080
CA - Canada 1.046
UA - Ucraina 570
IE - Irlanda 559
GB - Regno Unito 473
FR - Francia 431
IN - India 334
BD - Bangladesh 281
FI - Finlandia 200
KR - Corea 183
NL - Olanda 142
AT - Austria 120
AR - Argentina 117
IQ - Iraq 117
TR - Turchia 109
ID - Indonesia 100
JP - Giappone 86
PK - Pakistan 84
ES - Italia 70
MX - Messico 67
ZA - Sudafrica 66
BE - Belgio 64
SA - Arabia Saudita 64
DK - Danimarca 60
PL - Polonia 57
CO - Colombia 54
EC - Ecuador 51
PH - Filippine 47
UZ - Uzbekistan 38
CH - Svizzera 34
VE - Venezuela 30
MY - Malesia 29
KE - Kenya 28
CL - Cile 26
JM - Giamaica 26
EG - Egitto 23
MA - Marocco 23
PY - Paraguay 22
LT - Lituania 21
UY - Uruguay 21
DZ - Algeria 20
CZ - Repubblica Ceca 19
TW - Taiwan 18
TN - Tunisia 16
AE - Emirati Arabi Uniti 14
CR - Costa Rica 14
ET - Etiopia 14
PE - Perù 14
AZ - Azerbaigian 13
NP - Nepal 13
BO - Bolivia 12
IR - Iran 12
IL - Israele 10
LB - Libano 10
PS - Palestinian Territory 10
AU - Australia 9
JO - Giordania 9
TH - Thailandia 9
BB - Barbados 8
EE - Estonia 8
KZ - Kazakistan 8
PT - Portogallo 8
RO - Romania 8
TT - Trinidad e Tobago 8
GT - Guatemala 7
HR - Croazia 7
OM - Oman 7
GA - Gabon 6
AM - Armenia 5
CI - Costa d'Avorio 5
EU - Europa 5
GR - Grecia 5
NI - Nicaragua 5
SY - Repubblica araba siriana 5
BG - Bulgaria 4
BJ - Benin 4
DO - Repubblica Dominicana 4
HU - Ungheria 4
KG - Kirghizistan 4
LV - Lettonia 4
LY - Libia 4
MU - Mauritius 4
SC - Seychelles 4
AL - Albania 3
AO - Angola 3
HN - Honduras 3
MD - Moldavia 3
MN - Mongolia 3
NZ - Nuova Zelanda 3
RS - Serbia 3
SV - El Salvador 3
Totale 41.541
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Città #
Ann Arbor 2.698
Singapore 2.067
Stockholm 1.864
Ashburn 1.570
Dallas 1.462
Hong Kong 1.354
Woodbridge 1.353
San Jose 1.151
Fairfield 1.078
Houston 930
Toronto 774
Wilmington 688
Frankfurt am Main 620
Jacksonville 620
Chandler 569
Dublin 525
Milan 511
Seattle 499
New York 395
Cambridge 383
Council Bluffs 357
Beijing 325
Dearborn 324
Ho Chi Minh City 317
Santa Clara 306
Los Angeles 277
Princeton 266
Hefei 262
Chicago 249
The Dalles 238
Hanoi 234
Nanjing 174
Dong Ket 158
Seoul 158
Lauterbourg 148
Rome 148
Buffalo 143
Altamura 142
Lawrence 121
Shanghai 118
Hangzhou 116
Lachine 109
Vienna 103
Moscow 97
São Paulo 97
San Diego 90
Columbus 78
Boardman 77
Orem 74
Guangzhou 69
Helsinki 65
Nanchang 63
Munich 60
London 58
Phoenix 56
Shenyang 50
Jakarta 49
Ottawa 49
Warsaw 49
Tokyo 48
Atlanta 44
Baghdad 44
Brooklyn 43
Chennai 42
Hebei 42
Jiaxing 41
Montreal 40
Andover 39
Huizen 36
Da Nang 35
Jinan 35
Washington 35
Tashkent 34
Amsterdam 33
Changsha 33
Rio de Janeiro 33
Brussels 32
Haiphong 32
Dhaka 31
Florence 31
Norwalk 31
Nuremberg 31
Jeddah 29
Pune 29
Tianjin 29
Turin 29
Denver 28
Johannesburg 28
Sacramento 28
Curitiba 27
Grafing 27
Figino 26
Mountain View 26
Boston 24
Manchester 24
Lahore 23
Nairobi 23
Brasília 22
Kent 22
Pisa 22
Totale 28.296
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Nome #
A 0.46 nV/√Hz JFET Low-Noise Amplifier for Characterization of Nanoelectrode Coating Materials 3.405
Bright Blue Emitting Cu-Doped Cs2ZnCl4 Colloidal Nanocrystals 549
Silicene field-effect transistors operating at room temperature 544
Trap-Mediated Two-Step Sensitization of Manganese Dopants in Perovskite Nanocrystals 472
Electrically Detected Magnetic Resonance of Donors and Interfacial Defects in Silicon Nanowires 471
Ferromagnetic resonance of Co thin films grown by atomic layer deposition on the Sb2Te3 topological insulator 461
ALD growth of ultra-thin Co layers on the topological insulator Sb2Te3 449
Electron Spin Resonance of conduction electrons in Ge/SiGe quantum wells 446
Fe/Sb2Te3 Interface Reconstruction through Mild Thermal Annealing 445
Influence of doping elements on the formation rate of silicon nanowires by silver-assisted chemical etching 444
Ambient atmosphere laser-induced local ripening of MoS2 nanoparticles 395
Optical and Magneto-Optical Properties of Donor-Bound Excitons in Vacancy-Engineered Colloidal Nanocrystals 373
Design and Simulation of a Transmon Qubit Chip for Axion Detection 359
Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells 351
Optical Properties of Donor-Bound Excitons in Vacancy-Engineered Colloidal Nanocrystals 349
Negative-U trapping centers evidenced by admittance spectroscopy at the Ge/GeO2 interface 349
Hindering the Oxidation of Silicene with Non-Reactive Encapsulation 344
Colloidal Synthesis of Double Perovskite Cs2AgInCl6 and Mn-Doped Cs2AgInCl6 Nanocrystals 342
Electrically Detected Conduction Electron Spin Resonance in Bulk Germanium and Germanium Quantum Wells 335
Probing two-level systems with electron spin inversion recovery of defects at the Si/SiO2 interface 334
Long-lived conduction electron spins in Ge quantum wells 319
Evidence of Trigonal Dangling Bonds at the Ge(111)/Oxide Interface by Electrically Detected Magnetic Resonance 309
Electron spin resonance on a 2D van der Waals CrBr3 uniaxial ferromagnet 307
Effect of Electric Dipoles on Fermi Level Positioning at the Interface between Ultrathin Al2O3 Films and Differently Reconstructed In0.53Ga0.47As(001) Surfaces 306
Two-dimensional Si nanosheets with local hexagonal structure on a MoS 2 surface 305
Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag(111) 300
Electron Spin Resonance of conduction electrons in Ge/SiGe quantum wells 300
Local Electronic Properties of Corrugated Silicene Phases 299
Getting through the Nature of Silicene: An sp(2)-sp(3) Two-Dimensional Silicon Nanosheet 298
Exploring the morphological and electronic properties of silicene superstructures 287
Atomic Layer Deposition of Al-Doped ZrO2 Thin Films as Gate Dielectric for In0.53Ga0.47As 286
Strong confinement-induced engineering of the g-factor and lifetime of conduction electron spins in Ge quantum wells 284
Electrically detected magnetic resonance study of the Ge dangling bonds at the Ge(1 1 1)/GeO 2 interface after capping with Al 2 O 3 layer 282
Defects and Dopants in Silicon and Germanium Nanowires 282
Charge dynamics of a single donor coupled to a few-electron quantum dot in silicon 278
High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors 278
Plasma-Assisted Atomic Layer Deposition of IrO2 for Neuroelectronics 274
Defects and Dopants in Silicon and Germanium Nanowires 274
Thermal resistance measurement of In3SbTe2 nanowires 274
Al2O3 stacks on In0.53Ga0.47As substrates: In situ investigation of the interface 273
High-k dielectrics for CMOS and emerging logic devices 271
Influence of the oxidizing species on the Ge dangling bonds at the (100)Ge/GeO2 interface 268
Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode 268
Chemical nature of the passivation layer depending on the oxidizing agent in Gd2O3/GeO2/Ge stacks grown by molecular beam deposition 268
Electrical characterization of thin silicon-on-insulator films doped by means of phosphorus end-terminated polymers 267
Engineering the electronic properties of silicene by tuning the composition of MoX2 and GaX (X = S,Se,Te) chalchogenide templates 266
Defects and dopants in silicon nanowires produced by metal-assisted chemical etching 266
Role of the Oxygen Content in the GeO2 Passivation of Ge Substrates as a Function of the Oxidizer 261
Influence of the oxidation temperature on the non-trigonal Ge dangling bonds at the (1 0 0)Ge/GeO2 interface 260
Structural and chemical stabilization of the epitaxial silicene 260
Microscopic environment of Fe in epitaxially stabilized c-FeSi 254
Magnetic Transitions and Energy Transfer Processes in Sb-Based Zero-Dimensional Metal Halide Nanocrystals Doped with Manganese 253
Low power phase change memory switching of ultra-thin In3Sb1Te2 nanowires 252
Effective Hamiltonian for two interacting double-dot exchange-only qubits and their controlled-NOT operations 251
Analysis of hyperfine structure in chalcogen-doped silicon and germanium nanowires 248
Spin-dependent transport in dopant network processing units 247
Combining HRTEM-EELS nano-analysis with capacitance-voltage measurements to evaluate high-κ thin films deposited on Si and Ge as candidate for future gate dielectrics 246
Valley blockade and multielectron spin-valley Kondo effect in silicon 244
Electron spin resonance of substitutional nitrogen in silicon 240
Atomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applications 239
Investigation of the Si/SiO2 interface in silicon nanowires and its role in donor deactivation and charge transport 235
EPR and UV-Raman study of BPSG thin films: structure and defects 234
Spin-dependent recombination and single charge dynamics in silicon nanostructrures 234
Chemical, structural and magnetic properties of the Fe/Sb2Te3 interface 234
Exploiting the Close-to-Dirac Point Shift of the Fermi Level in the Sb2Te3/Bi2Te3 Topological Insulator Heterostructure for Spin-Charge Conversion 233
Metal organic chemical vapor deposition of phase change Ge 1Sb 2Te 4 nanowires 231
Towards Oxide Electronics: a Roadmap 230
Band alignment at the La2Hf2O7/(001)Si interface 229
A Viable Route to Enhance Permittivity of Gate Dielectrics on In0.53Ga0.47As(001): Trimethylaluminum-Based Atomic Layer Deposition of MeO2 (Me = Zr, Hf) 229
MOCVD growth and structural characterization of In-Sb-Te nanowires 226
Luminescence from beta-FeSi2 precipitates in Si. I. Morphology and epitaxial relationship 224
Magnetic resonance spectroscopy of defects at the dielectric-semiconductor interface: Ge substrates and Si nanowires (invited) 224
Significant enhancement of ferromagnetism above room temperature in epitaxial 2D van der Waals ferromagnet Fe5−δGeTe2/Bi2Te3 heterostructures 223
Geometrical Effects on Valley-Orbital Filling Patterns in Silicon Quantum Dots for Robust Qubit Implementation 223
Electronic properties of pristine and se doped [001] silicon nanowires: An ab initio study 223
Silicon nanowires: Donors, surfaces and interface defects 222
Large Spin-to-Charge Conversion at Room Temperature in Extended Epitaxial Sb2Te3 Topological Insulator Chemically Grown on Silicon 222
Theoretical aspects of graphene-like group IV semiconductors 221
Vibrational properties of epitaxial silicene layers on (111) Ag 219
Revealing 2D Magnetism in a Bulk CrSBr Single Crystal by Electron Spin Resonance 219
Pulsed laser deposition of ultrathin BaTiO3/Fe bi-layers: Structural characterization and piezoelectric response 217
Self-organized layered structure in epitaxially stabilized FeSi 217
Fe charge state adjustment in ZnO upon ion implantation 216
Dielectric properties of high-kappa oxides: Theory and experiment for Lu-2O-3 215
Confinement Effects and Hyperfine Structure in Se Doped Silicon Nanowires 215
Thermal stability of high-kappa oxides on SiO2/Si or SixNy/SiO2/Si for charge-trapping nonvolatile memories 214
Chemical vapor deposition growth of Fe3O4 thin films and Fe/Fe3O4 bi-layers for their integration in magnetic tunnel junctions 211
Donor Wave Functions Delocalization in Silicon Nanowires: The Peculiar [011] Orientation 211
Effect on Al:MO2/In0.53Ga0.47As interface (M = Hf, Zr) of trimethyl-aluminum pre-treatment during atomic layer deposition 211
Microwave Effects in Silicon Low Dimensional Nanostructures 210
ToF-SIMS study of phosphorus diffusion in low-dimensional silicon structures 210
Direct observation at nanoscale of resistance switching in NiO layers by conductive-atomic force microscopy 209
Cu+→ Mn2+ Energy Transfer in Cu, Mn Coalloyed Cs3ZnCl5Colloidal Nanocrystals 207
Few electron limit of n-type metal oxide semiconductor single electron transistors 207
Phosphorous-oxygen hole centers in phosphosilicate glass films 207
Synthesis of multiferroic Er-Fe-O thin films by atomic layer and chemical vapor deposition 207
Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices 205
Spin Pumping in Epitaxial Ge1-xSnx Alloys 204
Synthesis and characterization of DyScO films deposited on Si and Si-rich SiN by atomic layer deposition for blocking layer replacement in TANOS stack 204
Raman stress maps from finite-element models of silicon structures 204
Totale 30.897
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Categoria #
all - tutte 130.137
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 130.137
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.768 0 0 316 133 95 168 185 135 121 147 159 309
2022/20232.858 377 826 309 197 208 402 38 116 197 41 85 62
2023/20241.913 56 54 80 52 262 479 300 102 219 43 39 227
2024/20255.447 324 597 221 230 372 276 392 249 511 870 407 998
2025/202616.933 1.360 1.207 1.986 1.313 1.567 706 1.890 668 1.102 3.101 1.100 933
2026/20271.749 378 690 681 0 0 0 0 0 0 0 0 0
Totale 42.213