Resistive switching memory (RRAM) based on the redox-induced conductivity change in some metal oxides attracts considerable interest as a new technology for next-generation nonvolatile electronic storage. Although resistance-switching phenomena in several transition metal oxides have been known from decades, the details of the switching mechanisms and the nature of the different resistive states are still largely debated. For nonvolatile memory applications, the scaling potential of RRAMs is the most relevant issue, and understanding the scaling capability of RRAM devices requires a sound interpretation of resistance-switching operation and reliability aspects. This work addresses the scaling dependence of RRAM switching parameters. The dependence on the electrode area and on the size of the conductive filament (CF) responsible for low-resistance memory state is investigated. The RRAM conduction modes depending on CF size are discussed based on temperature dependent resistance analysis. Reset characteristics in different resistance states are explained by a Joule heating model for CF oxidation. (C) 2011 American Institute of Physics. {[doi:10.1063/1.3544499]}

Ielmini, D., Spiga, S., Nardi, F., Cagli, C., Lamperti, A., Cianci, E., et al. (2011). Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices. JOURNAL OF APPLIED PHYSICS, 109(3) [10.1063/1.3544499].

Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices

FANCIULLI, MARCO
2011

Abstract

Resistive switching memory (RRAM) based on the redox-induced conductivity change in some metal oxides attracts considerable interest as a new technology for next-generation nonvolatile electronic storage. Although resistance-switching phenomena in several transition metal oxides have been known from decades, the details of the switching mechanisms and the nature of the different resistive states are still largely debated. For nonvolatile memory applications, the scaling potential of RRAMs is the most relevant issue, and understanding the scaling capability of RRAM devices requires a sound interpretation of resistance-switching operation and reliability aspects. This work addresses the scaling dependence of RRAM switching parameters. The dependence on the electrode area and on the size of the conductive filament (CF) responsible for low-resistance memory state is investigated. The RRAM conduction modes depending on CF size are discussed based on temperature dependent resistance analysis. Reset characteristics in different resistance states are explained by a Joule heating model for CF oxidation. (C) 2011 American Institute of Physics. {[doi:10.1063/1.3544499]}
Articolo in rivista - Articolo scientifico
atomic layer deposition; thin-films; nio films; rram devices; mechanism
English
2011
109
3
034506
none
Ielmini, D., Spiga, S., Nardi, F., Cagli, C., Lamperti, A., Cianci, E., et al. (2011). Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices. JOURNAL OF APPLIED PHYSICS, 109(3) [10.1063/1.3544499].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/51646
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