The main feature of amorphous materials is the presence of excess vibrational modes at low energies, giving rise to the so-called “boson peak” in neutron and optical spectroscopies. These same modes manifest themselves as two-level systems (TLSs) causing noise and decoherence in qubits and other sensitive devices. Here, we present an experiment that uses the spin relaxation of dangling bonds at the Si/(amorphous)SiO2 interface as a probe of TLSs. We introduce a model that is able to explain the observed nonexponential electron spin inversion recovery and provides a measure of the degree of spatial localization and concentration of the TLSs close to the interface, their maximum energy, and its temperature dependence.
Belli, M., Fanciulli, M., de Sousa, R. (2020). Probing two-level systems with electron spin inversion recovery of defects at the Si/SiO2 interface. PHYSICAL REVIEW RESEARCH, 2(3) [10.1103/PhysRevResearch.2.033507].
Probing two-level systems with electron spin inversion recovery of defects at the Si/SiO2 interface
Fanciulli, M.
Co-primo
;
2020
Abstract
The main feature of amorphous materials is the presence of excess vibrational modes at low energies, giving rise to the so-called “boson peak” in neutron and optical spectroscopies. These same modes manifest themselves as two-level systems (TLSs) causing noise and decoherence in qubits and other sensitive devices. Here, we present an experiment that uses the spin relaxation of dangling bonds at the Si/(amorphous)SiO2 interface as a probe of TLSs. We introduce a model that is able to explain the observed nonexponential electron spin inversion recovery and provides a measure of the degree of spatial localization and concentration of the TLSs close to the interface, their maximum energy, and its temperature dependence.File | Dimensione | Formato | |
---|---|---|---|
PhysRevResearch.2.033507.pdf
accesso aperto
Descrizione: Articolo
Tipologia di allegato:
Publisher’s Version (Version of Record, VoR)
Dimensione
414.56 kB
Formato
Adobe PDF
|
414.56 kB | Adobe PDF | Visualizza/Apri |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.