The current status of the investigation of defects in silicon nanowires and at the interface between Si and its oxide in 1D nanostructures is reviewed and discussed. The paper concentrates on nanowires produced by metal assisted chemical etching. The role of defects at the interface between the semiconductor and its oxide and of hydrogen in passivating donor atoms is addressed.

Fanciulli, M., Belli, M., Paleari, S., Lamperti, A., Sironi, M., Pizio, A. (2016). Defects and dopants in silicon nanowires produced by metal-assisted chemical etching. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 5(4), P3138-P3141 [10.1149/2.0171604JSS].

Defects and dopants in silicon nanowires produced by metal-assisted chemical etching

FANCIULLI, MARCO
Primo
;
PALEARI, STEFANO;SIRONI, MARCO
Penultimo
;
2016

Abstract

The current status of the investigation of defects in silicon nanowires and at the interface between Si and its oxide in 1D nanostructures is reviewed and discussed. The paper concentrates on nanowires produced by metal assisted chemical etching. The role of defects at the interface between the semiconductor and its oxide and of hydrogen in passivating donor atoms is addressed.
Articolo in rivista - Articolo scientifico
Si, nanowires, defects, interface
English
2016
5
4
P3138
P3141
none
Fanciulli, M., Belli, M., Paleari, S., Lamperti, A., Sironi, M., Pizio, A. (2016). Defects and dopants in silicon nanowires produced by metal-assisted chemical etching. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 5(4), P3138-P3141 [10.1149/2.0171604JSS].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/107122
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