We report on the fabrication and electrical characterization of phase change memory (PCM) devices formed by In3Sb1Te2 chalcogenide nanowires (NWs), with diameters as small as 20 nm. The NWs were self-assembled by metal organic chemical vapor deposition via the vapor-liquid-solid method, catalyzed by Au nanoparticles. Reversible and well reproducible memory switching of the NWs between low and high resistance states was demonstrated. The conduction mechanism of the high resistance state was investigated according to a trap-limited model for electrical transport in the amorphous phase. The size of the amorphized portion of the NW and the critical electric field for the transition to the low resistance state were evaluated. The In3Sb1Te2 NW-based devices showed very low working parameters, such as RESET voltage (∼3 V), current (∼40 μA), and power (∼130 μW). Our results indicated that the studied NWs are suitable candidates for the realization of ultra-scaled, high performance PCM devices.

Selmo, S., Cecchini, R., Cecchi, S., Wiemer, C., Fanciulli, M., Rotunno, E., et al. (2016). Low power phase change memory switching of ultra-thin In3Sb1Te2 nanowires. APPLIED PHYSICS LETTERS, 109(21) [10.1063/1.4968510].

Low power phase change memory switching of ultra-thin In3Sb1Te2 nanowires

SELMO, SIMONE
Primo
;
Cecchi, S;FANCIULLI, MARCO;
2016

Abstract

We report on the fabrication and electrical characterization of phase change memory (PCM) devices formed by In3Sb1Te2 chalcogenide nanowires (NWs), with diameters as small as 20 nm. The NWs were self-assembled by metal organic chemical vapor deposition via the vapor-liquid-solid method, catalyzed by Au nanoparticles. Reversible and well reproducible memory switching of the NWs between low and high resistance states was demonstrated. The conduction mechanism of the high resistance state was investigated according to a trap-limited model for electrical transport in the amorphous phase. The size of the amorphized portion of the NW and the critical electric field for the transition to the low resistance state were evaluated. The In3Sb1Te2 NW-based devices showed very low working parameters, such as RESET voltage (∼3 V), current (∼40 μA), and power (∼130 μW). Our results indicated that the studied NWs are suitable candidates for the realization of ultra-scaled, high performance PCM devices.
Articolo in rivista - Articolo scientifico
Physics, phase-change memory, nanowire, In-Sb-Te, low power
English
Selmo, S., Cecchini, R., Cecchi, S., Wiemer, C., Fanciulli, M., Rotunno, E., et al. (2016). Low power phase change memory switching of ultra-thin In3Sb1Te2 nanowires. APPLIED PHYSICS LETTERS, 109(21) [10.1063/1.4968510].
Selmo, S; Cecchini, R; Cecchi, S; Wiemer, C; Fanciulli, M; Rotunno, E; Lazzarini, L; Rigato, M; Pogany, D; Lugstein, A; Longo, M
File in questo prodotto:
File Dimensione Formato  
1.4968510.pdf

Solo gestori archivio

Tipologia di allegato: Publisher’s Version (Version of Record, VoR)
Dimensione 1.5 MB
Formato Adobe PDF
1.5 MB Adobe PDF   Visualizza/Apri   Richiedi una copia

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/138898
Citazioni
  • Scopus 15
  • ???jsp.display-item.citation.isi??? 15
Social impact