Ferroelectric ultrathin BaTiO3 (BTO) films in contact with Fe underlayer have been grown by pulsed laser deposition onto MgO(100) substrates in a single vacuum cycle. The structural properties of the composite system are investigated by Rutherford backscattering spectrometry/channeling and cross-sectional transmission electron microscopy. The BTO band gap is measured by in situ reflection electron energy loss spectroscopy to be E-g = 4.1-4.3 eV depending on the growth conditions. The ferroelectric nature of BTO (thickness down to 3 nm) on top of Fe is demonstrated by piezoresponse force microscopy, which shows an out-of-plane piezoelectric coefficient of 17 +/- 4 pm/V. The obtained results are promising in the view of integrating BTO/Fe stacks in functional ferroelectric tunnel junctions. (C) 2011 Elsevier B.V. All rights reserved.
Zenkevich, A., Minnekaev, M., Lebedinskii, Y., Bulakh, K., Chouprik, A., Baturin, A., et al. (2012). Pulsed laser deposition of ultrathin BaTiO3/Fe bi-layers: Structural characterization and piezoelectric response. THIN SOLID FILMS, 520(14), 4586-4589 [10.1016/j.tsf.2011.10.188].
Pulsed laser deposition of ultrathin BaTiO3/Fe bi-layers: Structural characterization and piezoelectric response
FANCIULLI, MARCO;
2012
Abstract
Ferroelectric ultrathin BaTiO3 (BTO) films in contact with Fe underlayer have been grown by pulsed laser deposition onto MgO(100) substrates in a single vacuum cycle. The structural properties of the composite system are investigated by Rutherford backscattering spectrometry/channeling and cross-sectional transmission electron microscopy. The BTO band gap is measured by in situ reflection electron energy loss spectroscopy to be E-g = 4.1-4.3 eV depending on the growth conditions. The ferroelectric nature of BTO (thickness down to 3 nm) on top of Fe is demonstrated by piezoresponse force microscopy, which shows an out-of-plane piezoelectric coefficient of 17 +/- 4 pm/V. The obtained results are promising in the view of integrating BTO/Fe stacks in functional ferroelectric tunnel junctions. (C) 2011 Elsevier B.V. All rights reserved.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
