The nature of the defects present at various Ge/GeO2 interfaces has been investigated by means of electrically detected magnetic resonance EDMR spectroscopy. GeO2 thin films were grown by atomic oxygen, ozone, and molecular oxygen exposure. The defect microstructure is sensitive to the oxidizing species, i.e., to the oxidation mechanism. Different EDMR spectra are correlated with the specific electrical response of the corresponding Ge/GeO2 metal-oxide-semiconductor structures.
Baldovino, S., Molle, A., Fanciulli, M. (2010). Influence of the oxidizing species on the Ge dangling bonds at the (100)Ge/GeO2 interface. APPLIED PHYSICS LETTERS, 96(22), 222110-1-222110-3 [10.1063/1.3446839].
Influence of the oxidizing species on the Ge dangling bonds at the (100)Ge/GeO2 interface
BALDOVINO, SILVIA;FANCIULLI, MARCO
2010
Abstract
The nature of the defects present at various Ge/GeO2 interfaces has been investigated by means of electrically detected magnetic resonance EDMR spectroscopy. GeO2 thin films were grown by atomic oxygen, ozone, and molecular oxygen exposure. The defect microstructure is sensitive to the oxidizing species, i.e., to the oxidation mechanism. Different EDMR spectra are correlated with the specific electrical response of the corresponding Ge/GeO2 metal-oxide-semiconductor structures.
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