BALDOVINO, SILVIA

BALDOVINO, SILVIA  

DIPARTIMENTO DI SCIENZA DEI MATERIALI (attivo dal 01/01/1998 al 30/09/2012)  

Mostra records
Risultati 1 - 8 di 8 (tempo di esecuzione: 0.007 secondi).
Titolo Tipologia Data di pubblicazione Autori File
High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors 01 - Articolo su rivista 2010 BALDOVINO, SILVIAFANCIULLI, MARCO +
Influence of the oxidizing species on the Ge dangling bonds at the (100)Ge/GeO2 interface 01 - Articolo su rivista 2010 BALDOVINO, SILVIAFANCIULLI, MARCO +
Influence of the oxidation temperature on the non-trigonal Ge dangling bonds at the (100)Ge/GeO2 interface 01 - Articolo su rivista 2011 BALDOVINO, SILVIAFANCIULLI, MARCO +
Chemical nature of the passivation layer depending on the oxidizing agent in Gd2O3/GeO2/Ge stacks grown by molecular beam deposition 01 - Articolo su rivista 2011 BALDOVINO, SILVIAMOLLE, ALESSANDROFANCIULLI, MARCO +
Combining HRTEM-EELS nano-analysis with capacitance-voltage measurements to evaluate high-κ thin films deposited on Si and Ge as candidate for future gate dielectrics 01 - Articolo su rivista 2011 LAMAGNA, LUCABALDOVINO, SILVIAFANCIULLI, MARCO +
Magnetic resonance spectroscopy of defects at the dielectric-semiconductor interface: Ge substrates and Si nanowires 01 - Articolo su rivista 2011 FANCIULLI, MARCOBALDOVINO, SILVIAVELLEI, ANTONIO +
Electrically Detected Magnetic Resonance of Donors and Interfacial Defects in Silicon Nanowires 01 - Articolo su rivista 2011 FANCIULLI, MARCOVELLEI, ANTONIOCANEVALI, CARMENBALDOVINO, SILVIA +
Role of the Oxygen Content in the GeO2 Passivation of Ge Substrates as a Function of the Oxidizer 01 - Articolo su rivista 2012 BALDOVINO, SILVIAFANCIULLI, MARCO +