High mobility substrates and silicon nanowires are important key elements in the development of advanced devices targeting a vast range of functionalities. In almost all applications the interface between the semiconductor and the oxide layer placed on top or all around plays a crucial role in determining the device performance. The investigation of defects at these interfaces is therefore mandatory to fully exploit the advantages of these systems. We report on the application of electrically detected magnetic resonance (EDMR) techniques in the investigation of defects at the interface between Ge and GeO2 (or GeOx) and at the interface between silicon nanowires (SiNWs) and SiO2. © 2011 Elsevier B.V. All rights reserved.
Fanciulli, M., Molle, A., Baldovino, S., Vellei, A. (2011). Magnetic resonance spectroscopy of defects at the dielectric-semiconductor interface: Ge substrates and Si nanowires. MICROELECTRONIC ENGINEERING, 88(7), 1482-1487 [10.1016/j.mee.2011.03.103].
Magnetic resonance spectroscopy of defects at the dielectric-semiconductor interface: Ge substrates and Si nanowires
FANCIULLI, MARCO;BALDOVINO, SILVIA;VELLEI, ANTONIO
2011
Abstract
High mobility substrates and silicon nanowires are important key elements in the development of advanced devices targeting a vast range of functionalities. In almost all applications the interface between the semiconductor and the oxide layer placed on top or all around plays a crucial role in determining the device performance. The investigation of defects at these interfaces is therefore mandatory to fully exploit the advantages of these systems. We report on the application of electrically detected magnetic resonance (EDMR) techniques in the investigation of defects at the interface between Ge and GeO2 (or GeOx) and at the interface between silicon nanowires (SiNWs) and SiO2. © 2011 Elsevier B.V. All rights reserved.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
